2SD1472 Silicon NPN Epitaxial, Darlington REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 Note: Marking is “CT”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Ratings 120 120 7 1.5 3.0 1.0 150 –55 to +150 Unit V V V A A W °C °C E to C diode forward current ID 1.5 A Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 1 of 5 2SD1472 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD Notes: 1. Pulse test REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 2 of 5 Min 120 120 7 — — 2000 — — — — — Typ — — — — — — — — — — — Max — — — 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 Unit V V V µA µA V V V V V Test conditions IC = 0.1 mA, IE = 0 IC = 10 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 IC = 1 A, IB = 1 mA*1 IC = 1.5 A, IB = 1.5 mA*1 IC = 1 A, IB = 1 mA*1 IC = 1.5 A, IB = 1.5 mA*1 ID = 1.5 A*1 2SD1472 Main Characteristics 10 0.4 50 3 10 30 100 300 Typical Output Characteristics DC Current Transfer Ratio vs. Collector Current 30,000 Pc = 1 W DC Current Transfer Ratio hFE 200 180 160 140 120 0.8 100 µA 0.4 IB = 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Current 10 200, 500 3 VBE (sat) 500 1.0 VCE (sat) lC/lB = 200 0.3 0.1 0.1 0.03 0.01 150 1.2 0 Ta = 25°C 1 Shot Pulse 0.1 Collector to Emitter Voltage VCE (V) Ta = 25°C 1.6 0.3 Ambient Temperature Ta (°C) 2.0 Collector Current IC (A) 100 1.0 s ms 0µ 1 s 0m =1 0.8 1 µs iC (peak) 3 10 Collector Current IC (A) 1.2 0 Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Area of Safe Operation PW Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve Ta = 25°C 0.3 1.0 3 Collector Current IC (A) REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 3 of 5 10 10,000 3,000 Ta = 75 °C –2 25 VCE = 3 V Pulse 1,000 300 0.1 5 0.3 1.0 3 Collector Current IC (A) 10 2SD1472 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 10 3 Ta = 25°C On the Alumina Ceramic Board (12.5×30×0.7 mm) 1.0 0.3 1m 10 m 100 m 1 Time t (s) REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 4 of 5 10 100 1,000 2SD1472 Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name 2SD1472CTTR-E Note: Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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