UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 1 TO-126C ORDERING INFORMATION Ordering Number Lead Free 2SD669xL-x-AA3-R 2SD669xL-x-AB3-R 2SD669xL-x-T60-K 2SD669xL-x-T6C-K 2SD669xL-x-T92-B 2SD669xL-x-T92-K 2SD669xL-x-T92-R 2SD669xL-x-T9N-B 2SD669xL-x-T9N-K 2SD669xL-x-TM3-T 2SD669xL-x-TN3-R 2SD669xL-x-TN3-T Halogen Free 2SD669xG-x-AA3-R 2SD669xG-x-AB3-R 2SD669xG-x-T60-K 2SD669xG-x-T6C-K 2SD669xG-x-T92-B 2SD669xG-x-T92-K 2SD669xG-x-T92-R 2SD669xG-x-T9N-B 2SD669xG-x-T9N-K 2SD669xG-x-TM3-T 2SD669xG-x-TN3-R 2SD669xG-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92 TO-92NL TO-92NL TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B B C E B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Reel Tape Box Bulk Tube Tape Reel Tube (1) B: Tape Box, K: Bulk, R: Tape Reel 2SD669xL-x-AB3-R (1)Packing Type (2) AA3: SOT-223, AB3: SOT-89, T60: TO-126, (2)Package Type (2) T6C: TO-126C, TM3: TO-251, TN3: TO-252, (3)Rank (2) T92: TO-92, T9N: TO-92NL (4)Lead Plating (3) x: refer to Classification of hFE1 (5) Collector-Emitter Voltage (4) G: Halogen Free, L: Lead Free (5) A: 160V, Blank: 120V www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,J 2SD669/A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified) PARAMETER Collector-Base Voltage RATINGS UNIT 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Peak Current lC(PEAK) 3 A SOT-223/ SOT-89 0.5 W TO-126 1.3 W TO-126C 1 W Power Dissipation PD TO-92/TO-92NL 0.6 W TO-251 1 W TO-252 2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. HERMAL DATA Junction to Case SYMBOL VCBO PARAMETER SOT-89 SOT-223 TO-92/ TO-92NL TO-126 TO-126C TO-251/ TO-252 RATINGS 38 14 80 6.25 10 4.5 θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance Note: Pulse test. SYMBOL SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=10mA, RBE=∞ BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE fT Cob IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz MIN 180 120 160 5 TYP MAX UNIT V V 10 320 60 30 1 1.5 140 14 V μA V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100-200 D 160-320 2 of 4 QW-R204-005,J 2SD669/A TYPICAL CHARACTERISTICS DC Current Transfer Ratio, hFE Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10 IB 5°C T A=7 25 0 25 20 0 15 0 -20 10 0 50 VCE=5V 1 3 1.0 0.8 25 75 0.6 0.4 0.2 0 Collector Output Capacitance, Cob (pF) 20°C T C=- 1 3 10 30 100 300 Collector Current, IC (mA) Collector Output Capacitance vs. Collector to Base Voltage 200 f=1MHz IE=0 100 50 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.6 0.4 =7 TC 0.2 5 °C -20 1 3 10 30 100 300 1000 Collector Current, IC (mA) Gain Bandwidth Product vs. Collector Current 240 VCE=5V TA=25°C 200 160 120 80 40 0 10 1,000 30 100 300 Collector Current, IC (mA) 1,000 Area of Safe Operation 3 Collector Current, IC (A) Base to Emitter Saturation Voltage, VBE(SAT) (V) Base to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10IB 0.8 0 10 30 100 300 1000 3000 Collector Current, IC (mA) Gain Bandwidth Product, fT (MHz) 1 1.0 25 DC Current Transfer Ratio vs. Collector Current 30 0 Collector to emitter saturation voltage, VCE(SAT) (V) NPN SILICON TRANSISTOR (13.3V, 1.5A) 1.0 40V, 0.5A 2SD669A 0.3 0.1 DC Operation (TC=25°C) (120V, 0.04A) 0.03 0.01 1 (160V, 0.02A) 2SD669 100 300 30 3 10 Collector to Emitter Voltage, VCE (V) 3 of 4 QW-R204-005,J 2SD669/A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Typical Transfer Characteristics 500 VCE=5V 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-005,J