NXP ultra-low clamping ESD protection diodes PESD5V0X1U family High-performance ESD protection for sensitive ICs Specifically designed for ultra-low clamping voltages, ultra-low overshoot voltages, and ultra-low capacitance, these advanced devices provide the highest levels of protection against ESD strikes for highly ESD-sensitive ICs. 200 180 140 130 nm 120 100 IC M in iat 90 nm ur 80 60 45 nm 40 iza tio n 35 nm 22 nm/15 nm/11 nm (estimates) 20 0 1995 Applications `` High-speed data interfaces in communication, consumer, and computing markets `` Protection for highly sensitive interface controller ICs low 180 nm 160 Technology node [nm] Key benefits `` Highest level of protection against ESD strikes for highly sensitive ICs `` Ultra-small packages for compact PCB designs Increased ESD vulnerability due to continuing miniaturization ESD threat level Key features `` Best-in-class overshoot voltage for an 8 kV ESD strike `` Ultra-low clamping voltage of 7.5 V @ 30 ns after an ` 8 kV ESD strike `` Ultra-low capacitance: 0.95 pF `` Innovative DFN1006D-2 (SOD882D) package with solderable, tin-plated side pads 2000 2005 Year 2010 2015 high 2020 The ultra-small process technologies used to produce today’s miniature semiconductors have the side-effect of making the ICs more vulnerable to voltage transients caused by ESD strikes. NXP’s PESD5V0X1U family supports these highly sensitive ICs by providing high-performance ESD protection. Clamping performance of the unidirectional PESD5V0X1ULD compared to other devices with comparable capacitance (positive 8 kV ESD pulse according to IEC61000-4-2) Capacitance max. Overshoot voltage at 8 kV ESD pulse Clamping voltage at 30 ns 8 kV ESD pulse Voltage [V] 100 75 50 25 0 -25 PESD5V0X1ULD 1.15 pF 53 V 7.5 V Competitor 1 0.9 pF 130 V 13.1 V Competitor 2 0.6 pF 93 V 17.1 V Competitor 3 2.5 pF 117 V 12.6 V Competitor devices NXP PESD5V0X1ULD with` lowest overshoot and clamping voltage 125 -10 Device 150 0 10 20 -50 30 Time [ns] Compared to other devices with similar electrical parameters, PESD5V0X1U diodes have the lowest overshoot and clamping voltages after 30 ns for an 8 kV ESD pulse, according to IEC61000-4-2. The combination of extremely low capacitance and ultra-low clamping voltage makes these devices ideal for high-speed dataline protection applications. Cd max [pF] ESD rating max [kV] Rdyn @ 10A [Ω] 5V 0.95 pF 1.15 pF 8 kV 0.25 Ω PESD5V0X1UAB 5V 1.55 pF 1.75 pF 15 kV 0.15 Ω PESD5V0X1ULD 5V 0.95 pF 1.15 pF 8 kV 0.25 Ω PESD5V0X1UALD 5V 1.55 pF 1.75 pF 15 kV 0.15 Ω SOD523 (1.2 x 0.8 x 0.6 mm) 0.30 0.22 DFN1006D-2 (SOD882D) (1.0 x 0.6 x 0.37 mm) 0.4 max 2 0.65 0.30 0.22 1.05 0.95 1 0.55 0.45 cathode marking on top side DFN1006D-2 (SOD882D) SOD523 (SC-79) www.nxp.com © 2012 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The Date of release: August 2012 information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and Document order number: 9397 750 17132 may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof Printed in the Netherlands does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1 2 mse209 Packages 0.65 0.55 Configuration Cd typ [pF] PESD5V0X1UB Package Product VRWM [V] Ultra-low clamping ESD protection diodes family 1 2 006aaa152