SEMICONDUCTOR PF1007UDF8 TECHNICAL DATA EMI Filtering TVS EMI Filtering TVS For Data Line C A E 1 4 B EMI/RFI filtering. F G FEATURES GND PAD H Pin 1 ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. 8 Good attenuation of high frequency signals. D 5 BOTTOM VIEW TOP VIEW Low clamping voltage. Low operating and leakage current. DIM A B C D E F G H J K L Four elements in one package J K L SIDE VIEW 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING PR 100 *PD 400 Junction Temperature Tj 150 Storage Temperature Tstg DC Power Per Resistor MILLIMETERS 1.80 1.20 _ 0.10 1.00 + _ 0.05 0.20 + 0.40 _ 0.10 0.30 + _ 0.05 0.25 + 0.20 Min _ 0.05 0.50 + 0.125 0.03+0.02/-0.03 UNIT UDFN-8 mW Power Dissipation -55 150 * Total Package Power Dissipation EQUIVALENT CIRCUIT FILTERn* 100Ω MARKING Type Name FILTERn* T9 7.5pF 7.5pF Lot No. GND ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - - V VRWM=3.3V - - 1 A VR=0V, ZSOURCE=50 , ZLOAD=50 - 200 - MHz Between Input and Output - 100 - VR=2.5V, Between I/O Pins and GND - 15 - VBR Reverse Breakdown Voltage IR Reverse Leakage Current f3dB Cutoff Frequency Resistance Capacitance 2007. 12. 27 ) R C2.5V Revision No : 0 pF 1/2 PF1007UDF8 S21 - F 2.0 0 INSERTION LOSS (dB) NORMALIZED CAPACITANCE CJ - V R 1.5 1.0 0.5 -10 -20 -30 -40 0.0 0 1 2 3 4 5 1 10 100 1000 6000 FREQUENCY (MHz) REVERSE VOLTAGE VR (V) REVERSE LEAKAGE CURRENT IR (nA) IR - VR 100 10 1 0.1 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2007. 12. 27 Revision No : 0 2/2