SEMICONDUCTOR PF0347TE6 TECHNICAL DATA EMI Filtering TVS EMI Filtering TVS For USB Port TENTATIVE FEATURES B EMI/RFI filtering. B1 ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. C A 1 6 2 5 3 4 A1 Low clamping voltage. C Good attenuation of high frequency signals. D Low operating and leakage current. P P DIM A A1 B B1 C D H J MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 J H P MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT *PD 200 mW Junction Temperature Tj 150 Storage Temperature Tstg Power Dissipation 1. 2. 3. 4. 5. 6. D1 GND D3 D4 D5 D6 -55 150 TES6 * Total Package Power Dissipation EQUIVALENT CIRCUIT MARKING R 1 6 D1 C Rp D6 2 Type Name T2 5 D5 D3 C D4 4 3 R ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - 10 V IR VRWM=3.3V - - 0.5 R Between Input and Output - 33 - Rp Between Pin5 and Pin 6 - 1.5 - C VR=0V, Between I/O Pins and GND - 47 - VBR Reverse Breakdown Voltage Reverse Leakage Current Resistance Capacitance 2007. 1. 8 Revision No : 0 pF 1/1