Preliminary Datasheet 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET R07DS0397EJ0300 (Previous: REJ03G0907-0200) Rev.3.00 May 16, 2011 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Ratings 450 500 Unit V VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg ±30 1.5 6 1.5 20 150 –55 to +150 V A A A W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at TC = 25°C R07DS0397EJ0300 Rev.3.00 May 16, 2011 Page 1 of 6 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown 2SK1151 voltage 2SK1152 Gate to source breakdown voltage Gate to source leak current 2SK1151 Zero gate voltage drain current 2SK1152 V(BR)GSS IGSS Gate to source cutoff voltage 2SK1151 Static drain to source on state resistance 2SK1152 RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss td(on) tr td(off) tf Body to drain diode forward voltage Body to drain diode reverse recovery time Note: V(BR)DSS IDSS VGS(off) VDF trr Min 450 500 ±30 — — Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 — — — — ±10 100 V μA μA 2.0 — — 0.6 — — — — — — — — 3.5 4.0 1.1 160 45 5 5 10 20 10 3.0 5.5 6.0 — — — — — — — — V Ω IG = ±100 μA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V *3 S pF pF pF ns ns ns ns ID = 1 A, VDS = 20 V *3 — — 1.0 220 — — V ns IF = 1.5 A, VGS = 0 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30 Ω IF = 1.5 A, VGS = 0, diF/dt = 100 A/μs 3. Pulse test R07DS0397EJ0300 Rev.3.00 May 16, 2011 Page 2 of 6 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area Drain Current ID (A) 25 °C ) 2SK1151 2SK1152 1 100 10 1,000 Typical Output Characteristics Typical Transfer Characteristics 2.0 15 V 5V Drain Current ID (A) 6V 10 V Pulse Test 0.8 4V 0.4 VDS = 20 V Pulse Test 1.6 1.2 0.8 –25°C 75°C 0.4 VGS = 3.5 V 4 8 12 TC = 25°C 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 12 2A 8 1A 4 ID = 0.5 A 4 8 12 16 Gate to Source Voltage VGS (V) R07DS0397EJ0300 Rev.3.00 May 16, 2011 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) = Drain to Source Voltage VDS (V) 4.5 V 0 ) ot Sh C 0.01 150 1.2 0 (T Case Temperature TC (°C) 2.0 1.6 100 n 0.1 Ta = 25°C 50 io (1 at 0.3 s s pe r m Channel Dissipation Pch (W) O μs 10 C 0.03 0 Drain Current ID (A) D m μs 0 1 = 10 1.0 10 PW 20 10 3 O a pe by rea rat R is ion DS lim in (o i t n) ted his 10 30 100 50 Pulse Test VGS = 10 V 20 10 15 V 5 2 1 0.05 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) Page 3 of 6 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Forward Transfer Admittance ⏐yfs⏐ (S) Static Drain-Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 10 ID = 2 A 8 VGS = 10 V Pulse Test 6 1A 0.5 A 4 2 0 –40 0 40 80 120 160 VDS = 20 V Pulse Test 2 1.0 TC = 25°C 0.5 75°C 0.2 0.1 0.1 0.5 0.2 5 Typical Capacitance vs. Drain to Source Voltage 1,000 di/dt = 100 A/μs, Ta = 25°C VGS = 0 Pulse Test 50 VGS = 0 f = 1 MHz Ciss 100 Coss 10 20 Crss 0.1 0.2 0.5 1.0 2 1 5 0 Reverse Drain Current IDR (A) 16 12 300 VGS 8 200 VDD = 400 V 250 V 100 V 100 2 4 ID = 1.5 A 6 Gate Charge Qg (nc) R07DS0397EJ0300 Rev.3.00 May 16, 2011 8 40 50 4 0 10 • VGS = 10 V VDD = 30 V PW = 2 μs, duty < 1% • 50 Switching Time t (ns) 250 V 400 V 30 100 20 100 V VDS 20 Switching Characteristics Gate to Source Voltage VGS (V) 500 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0 2 Body to Drain Diode Reverse Recovery Time 100 400 1.0 Drain Current ID (A) 200 10 0.05 Drain to Source Voltage VDS (V) –25°C Case Temperature TC (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) 5 0.05 1,000 500 Forward Transfer Admittance vs. Drain Current td (off) 20 tf 10 td (on) 5 tr 2 1 0.05 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) Page 4 of 6 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 2.0 Pulse Test 1.6 1.2 0.8 0.4 5 V, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θch–c(t) = γS (t) • θch–c θch–c = 6.25°C/W, TC = 25°C PDM PW D= T PW T 0.02 0.03 lse 0.01 ot Pu h 1S 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Ω Vin = 10 V R07DS0397EJ0300 Rev.3.00 May 16, 2011 . VDD =. 30 V td (on) 10 % 90 % tr 10 % 90 % td (off) tf Page 5 of 6 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Package Dimensions • 2SK1151(L), 2SK1152(L) JEITA Package Code ⎯ RENESAS Code PRSS0004ZD-A Previous Code DPAK(L)-(1) / DPAK(L)-(1)V 1.7 ± 0.5 Package Name DPAK(L)-(1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 MASS[Typ.] 0.42g 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 • 2SK1151(S), 2SK1152(S) JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) 6.5 ± 0.3 5.6 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 Ordering Information Orderable Part Number 2SK1151L-E 2SJ1151STR-E 2SK1152L-E 2SJ1152STR-E R07DS0397EJ0300 Rev.3.00 May 16, 2011 Quantity 2160 pcs 3000 pcs 2160 pcs 3000 pcs Shipping Container Box (Tube) Taping Box (Tube) Taping Page 6 of 6 Notice 1. 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