Preliminary Datasheet HAT2203C R07DS0323EJ0500 (Previous: REJ03G0447-0400) Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 Ratings 20 ±12 2 8 Unit V V A A IDR Pch Note2 Tch Tstg 2 830 150 –55 to +150 A mW C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 Page 1 of 6 HAT2203C Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 20 ±12 — — 0.4 Typ — Max — Unit V — — — ±10 1 1.4 A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to Source on state resistance RDS(on) — 69 90 m ID = 1 A, VGS = 4.5 VNote3 RDS(on) — 107 150 m ID = 1 A, VGS = 2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3 — — — — — — — — 4.5 165 50 20 6 5 20 4 1.8 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Qgs Qgd VDF — — — 0.4 0.4 0.8 — — 1.1 nC nC V ID = 1 A VGS = 10 V RL = 10 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 Page 2 of 6 HAT2203C Preliminary Main Characteristics Power vs. Temperature Derating (A) -30 When using the FR4 board. ID n Operation in this area is limited by RDS(on) Ta (°C) ) °C -0.01 -0.01 25 200 = -0.1 a (T Case Temperature 150 s io 100 m t ra 50 m s 10 pe -0.3 -0.03 0 1 = O 400 PW -1 C 800 100 μs 10 μs -10 -3 Drain Current Pch (mW) Ta = 25°C,1 shot Pulse Test Conditions: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) D Channel Dissipation 1200 Maximum Safe Operation Area -100 1600 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics 2.5 V VDS = 10 V Pulse Test 2V 3V 4 1.5 V 2 25°C 8 ID 4.5 V Drain Current 6 Drain Current Pulse Test 8 ID (A) 10 V Typical Transfer Characteristics 10 (A) 10 −25°C 6 Tc = 75 °C 4 2 VGS = 1 V 0 2 4 6 Drain to Source Voltage Pulse Test 300 200 ID = 2 A 100 1A 0.5 A 0 6 2 4 Gate to Source Voltage R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 8 V GS (V) 10 1 2 3 Gate to Source Voltage 4 5 V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Drain to Source On State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 400 0 8 10 V DS (V) VGS = 2.5V 100 4.5V 10 0.1 Pulse Test Ta = 25 °C 1 Drain Current 10 ID (A) 100 Page 3 of 6 Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 200 160 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2203C 0.5 A 1A ID = 2 A 120 VGS = 2.5 V 80 0.5 A 2A 4.5 V 40 1A Pulse Test 0 −25 0 25 50 75 Case Temperature 100 125 150 10 3 Tc = −25°C 25°C 1 75°C 0.3 0.1 0.03 0.01 0.01 VDS = 10 V Pulse Test 0.03 Tc ( °C) 0 VDD 4 2 VDD = 20 V 10 V 5V 0.8 1.6 2.4 3.2 Gate Charge Qg (nC) Ciss 100 Coss 30 Crss 10 0 4 8 12 1000 5V VGS = 0 , -5 V 4 24 20 V DS (V) Switching Characteristics 100 td(off) 10 tr td(on) tf 2 Pulse Test 0 16 Drain to Source Voltage Switching Time t (ns) IDR (A) Reverse Drain Current 300 1 10 6 1000 3 0 4.0 Reverse Drain Current vs. Source to Drain Voltage 8 VGS = 0 f = 1 MHz 3000 Capacitance C (pF) 6 VGS (V) VGS VDD = 5 V 10 V 20 V 10 10 ID (A) 10000 8 Gate to Source Voltage VDS (V) Drain to Source Voltage 20 3 1 Typical Capacitance vs. Drain to Source Voltage 40 30 0.3 Drain Current Dynamic Input Characteristics ID = 2 A 0.1 0.4 0.8 1.2 Source to Drain Voltage R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 1.6 V SD (V) 2.0 1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Page 4 of 6 HAT2203C Preliminary Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Ω Vin 4.5 V VDS = 10 V Vout 10% 10% 90% td(on) R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 tr 10% 90% td(off) tf Page 5 of 6 HAT2203C Preliminary Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A e A2 Reference Symbol A A1 y S S e1 b l1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b2 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Orderable Part Number HAT2203C-EL-E R07DS0323EJ0500 Rev.5.00 Mar 28, 2011 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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