2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Symbol Rating Unit VDSS 180 V VGSS ±20 V ID 10 A PD 120 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150°C. Marking 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K1529 Part No. (or abbreviation code) Lot No. Note 2 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Electrical Characteristics (Ta = 25°C) Characteristics Drain cut−off current Gate leakage current Symbol IDSS IGSS Test Condition VDS = 180 V, VGS = 0 VDS = 0, VGS = ±20 V Min Typ. Max Unit — — 1.0 mA — — ±0.5 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 180 — — V Drain−source saturation voltage VDS (ON) ID = 6 A, VGS = 10 V — 2.5 5.0 V Gate−source cut−off voltage (Note 3) VGS (OFF) VDS = 10 V, ID = 0.1 A 0.8 — 2.8 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A — 4.0 — S Input capacitance Ciss VDS = 30 V, VGS = 0, f = 1 MHz — 700 — Output capacitance Coss VDS = 30 V, VGS = 0, f = 1 MHz — 150 — Reverse transfer capacitance Crss VDS = 30 V, VGS = 0, f = 1 MHz — 90 — Note 3: VGS (OFF) Classification 0: 0.8 to 1.6 Y: 1.4 to 2.8 pF This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-12-21 2SK1529 2 2009-12-21 2SK1529 Switching Time Test Circuit Waveforms 3 2009-12-21 2SK1529 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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