DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 15 Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Industrial and consumer switching applications. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT4401. handbook, halfpage 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER 2 1 ∗2T PMBT4403 2 Top view Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −600 mA ICM peak collector current − −800 mA IBM peak base current − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification PNP switching transistor PMBT4403 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −40 V − −50 nA emitter cut-off current IC = 0; VEB = −5 V − −50 nA DC current gain VCE = −1 V; (see Fig.2) IC = −0.1 mA 30 − IC = −1 mA 60 − IC = −10 mA 100 − 100 300 ICBO collector cut-off current IEBO hFE VCE = −2 V IC = −150 mA IC = −500 mA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage 20 − IC = −150 mA; IB = −15 mA − −400 mV IC = −500 mA; IB = −50 mA − −750 mV IC = −150 mA; IB = −15 mA − −950 mV IC = −500 mA; IB = −50 mA − −1.3 V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 8.5 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 35 pF fT transition frequency IC = −20 mA; VCE = −10 V; f = 100 MHz 200 − MHz Switching times (between 10% and 90% levels); (see Fig.3) − 40 ns − 15 ns rise time − 30 ns toff turn-off time − 350 ns ts storage time − 300 ns tf fall time − 50 ns ton turn-on time td delay time tr 1999 Apr 15 ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA 3 Philips Semiconductors Product specification PNP switching transistor PMBT4403 MGD812 300 handbook, full pagewidth hFE VCE = −1 V 200 100 0 −10−1 −1 −10 −102 Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = 3.5 V; VCC = −29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 15 4 oscilloscope IC mA −103 Philips Semiconductors Product specification PNP switching transistor PMBT4403 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 15 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PNP switching transistor PMBT4403 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 15 6 Philips Semiconductors Product specification PNP switching transistor PMBT4403 NOTES 1999 Apr 15 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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