DATA SHEET PHOTOCOUPLER PS2732-1,-2,-4, PS2733-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2732-1, -2, -4 and PS2733-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications. FEATURES • High isolation voltage (BV = 2 500 Vr.m.s.) • High collector to emitter voltage (VCEO = 300 V: PS2732-1, -2, -4) (VCEO = 350 V: PS2733-1, -2, -4) • SOP (Small Outline Package) type • High current transfer ratio (CTR = 4 000 % TYP.) • Ordering number of taping product (only 1-channel type) : PS2732-1-E3, E4, F3, F4, PS2733-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hybrid IC • Telephone/Telegraph Receiver • FAX The information in this document is subject to change without notice. Document No. P11312EJ3V0DS00 (3rd edition) Date Published December 1997 NS CP (K) Printed in Japan The mark shows major revised points. © 1994 PS2732-1,-2,-4,PS2733-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) PS2732-1 PS2733-1 4.5 MAX. TOP VIEW 4 1 3 1. Anode 2. Cathode 3. Emitter 4. Collector 2 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2732-2 PS2733-2 9.3 MAX. TOP VIEW 8 7 6 5 1. 3. 2. 4. 5. 7. 6. 8. 1 2 3 4 7.0±0.3 4.4 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. Anode Cathode Emitter Collector 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2732-4 PS2733-4 19.46 MAX. TOP VIEW 16 15 1 2 14 13 12 3 4 5 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 2 0.25 M 2.54 1.2 MAX. 0.5±0.3 10 9 6 7 8 Anode Cathode Emitter Collector 7.0±0.3 4.4 0.4 +0.10 –0.05 11 1.3 PS2732-1,-2,-4,PS2733-1,-2,-4 ORDERING INFORMATION Part Number Package Safety Standard Approval PS2732-1, PS2733-1 4-pin SOP Standard products PS2732-2, PS2733-2 8-pin SOP • UL approved PS2732-4, PS2733-4 16-pin SOP PS2732-1-V, PS2733-1-V 4-pin SOP PS2732-2-V, PS2733-2-V 8-pin SOP PS2732-4-V, PS2733-4-V 16-pin SOP VDE0884 approved products (Option) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2732-1 Diode PS2732-2,-4 PS2733-2,-4 Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW/ch IFP 1 A Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2733-1 Unit *1 Collector to Emitter Voltage VCEO Emitter to Collector Voltage VECO 0.3 V IC 150 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 300 350 300 350 V ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 2 500 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 3 PS2732-1,-2,-4,PS2733-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Transistor Coupled Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Collector to Emitter Current ICEO IF = 0 mA, VCE = 300 V Current Transfer Ratio TYP. MAX. Unit 1.15 1.4 V 5 µA 30 pF 400 CTR IF = 1 mA, VCE = 2 V VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 10 mA, RL = 100 Ω 100 µs Fall Time *1 tr *1 VCC IF VOUT RL = 100 Ω V Ω 100 Pulse Input % 1.0 11 tf 50 Ω 4 000 10 *1 Test circuit for switching time PW = 1 ms Duty cycle = 1/10 1 500 nA Collector Saturation Voltage Rise Time 4 MIN. PS2732-1,-2,-4,PS2733-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 75 50 25 25 0 50 75 50 25 50 75 100 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.8 1.0 1.2 1.4 1.6 10 000 VCE = 300 V 1 000 100 10 1 0.1 –25 –50 0 25 50 75 100 Forward Voltage VF (V) Ambient Temperature TA (˚C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 1 000 5 mA 4.5 mA 4 mA 3.5 mA 3 mA 2.5 mA 140 120 100 Collector Current IC (mA) Forward Current IF (mA) PS2732-2,-4, PS2733-2,-4 1.2 mW/˚C COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 160 Collector Current IC (mA) 100 FORWARD CURRENT vs. FORWARD VOLTAGE 0.1 2 mA 80 1.5 mA 60 1 mA 40 20 0 PS2732-1, PS2733-1 1.5 mW/˚C Ambient Temperature TA (˚C) 1 0.01 0.6 150 Ambient Temperature TA (˚C) 100 10 200 0 100 Collector to Emitter Dark Current ICEO (nA) Diode Power Dissipation PD (mW) 100 IF = 5 mA 100 2 mA 1 mA 0.5 mA 10 1 IF = 0.5 mA 1 2 3 4 Collector to Emitter Voltage VCE (V) 5 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Collector Saturation Voltage VCE (sat) (V) 5 PS2732-1,-2,-4,PS2733-1,-2,-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 5 000 1.2 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 0.2 0 –50 –25 25 0 50 75 Sample A VCE = 2 V 4 000 Sample B 3 000 2 000 1 000 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 VCC = 10 V, IC = 10 mA 0 Normalized Gain GV Switching Time t ( µ s) 50 td tf 10 5 ts 50 100 500 1k –5 2k Load Resistance RL (Ω) 100 Ω –10 1 kΩ –15 VCE = 4 V, IC = 10 mA, –20 Vin = 0.1 Vp-p –25 1 20 RL = 10 Ω tr 100 1 kΩ 1 µF Vin –30 0.01 47 Ω RL Vout 0.1 1 10 Frequency f (kHz) LONG TERM CTR DEGRADATION 1.2 TA = 25 ˚C IF = 1 mA CTR (Relative Value) 1.0 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (Hr) Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed. 6 100 PS2732-1,-2,-4,PS2733-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 4.6±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 8.0±0.1 Tape Direction PS2732-1-E4, F4 PS2733-1-E4, F4 PS2732-1-E3, F3 PS2733-1-E3, F3 Outline and Dimensions (Reel) 2.0±0.5 1.5±0.5 60 ˚ 6.0±1 Packing: PS2732-1-E3, E4, PS2733-1-E3, E4 900 pcs/reel PS2732-1-F3, F4, PS2733-1-F3, F4 3 500 pcs/reel 1.5±0.1 φ 13.0±0.5 ˚ φ 66 12 0 PS2732-1-E3, E4, PS2733-1-E3, E4 : φ 178 PS2732-1-F3, F4, PS2733-1-F3, F4: φ 330 φ 21.0±0.8 1.5±0.1 12.4 +2.0 –0.0 18.4 MAX. 7 PS2732-1,-2,-4,PS2733-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 8 PS2732-1,-2,-4,PS2733-1,-2,-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 150 Vr.m.s. IV for rated line voltages ≤ 300 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength Maximum operating isolation voltage UIORM 710 Vpeak Upr 850 Vpeak Test voltage (partial discharge test, procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak Highest permissible overvoltage UTR 4 000 Vpeak Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C 12 Ω 11 Ris MIN. 10 Ω Package temperature Tsi 150 °C Current (input current IF, Psi = 0) Isi 300 mA Power (output or total power dissipation) Psi 500 mW Ris MIN. 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 9 Ω 9 PS2732-1,-2,-4,PS2733-1,-2,-4 [MEMO] 10 PS2732-1,-2,-4,PS2733-1,-2,-4 [MEMO] 11 PS2732-1,-2,-4,PS2733-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5