DATA SHEET PHOTOCOUPLER PS2525-1,-2,-4,PS2525L-1,-2,-4 LARGE FORWARD INPUT TYPE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2525-1, -2, -4 and PS2525L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor. The PS2525-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2525L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • Large forward input current (IF = ±150 mA) • AC input response • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2525L-1-E3, E4, F3, F4, PS2525L-2-E3, E4 • UL approved: File No. E72422 (S) APPLICATIONS • Exchange equipment • FAX/MODEM • LCR adapter The information in this document is subject to change without notice. Document No. P11433EJ3V0DS00 (3rd edition) Date Published December 1997 NS CP(K) Printed in Japan The mark • shows major revised points. © 1993 PS2525-1,-2,-4,PS2525L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP type PS2525-1 PS2525-2 TOP VIEW TOP VIEW 4 5.1 MAX. 3 8 10.2 MAX. 7 0 to 15˚ 3.8 MAX. 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 6.5 0.65 2.8 MIN. 4.55 MAX. 7.62 6.5 2.54 2.54 1.25±0.15 0 to 15˚ 0.50±0.10 0.25 M 0.50±0.10 0.25 M PS2525-4 TOP VIEW 20.3 MAX. 16 1 15 14 13 12 3.8 MAX. 2.8 MIN. 4.55 MAX. 0.65 2.54 0.50±0.10 0.25 M 2 11 10 9 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 7.62 6.5 1.25±0.15 5 1 2 3 4 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1.25±0.15 6 0 to 15˚ PS2525-1,-2,-4,PS2525L-1,-2,-4 Lead bending type PS2525L-1 PS2525L-2 TOP VIEW TOP VIEW 3 8 10.2 MAX. 1.25±0.15 0.25 M 5 7.62 6.5 3.8 MAX. 0.05 to 0.2 3.8 MAX. 2.54 6 1 2 3 4 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 6.5 7 0.05 to 0.2 4 5.1 MAX. 0.9±0.25 9.60±0.4 0.9±0.25 9.60±0.4 2.54 1.25±0.15 0.25 M PS2525L-4 TOP VIEW 15 14 13 12 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 3.8 MAX. 7.62 6.5 1.25±0.15 0.25 M 2.54 11 10 9 0.05 to 0.2 20.3 MAX. 16 0.9±0.25 9.60±0.4 3 PS2525-1,-2,-4,PS2525L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Diode Parameter Symbol Forward Current (DC) IF Power Dissipation Derating Power Dissipation ±150 Unit mA ∆PD/°C 2.5 2.0 mW/°C PD 250 200 mW/ch IFP ±1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 6 V IC 50 mA/ch Peak Forward Current Transistor PS2525-2, -4, PS2525L-2, -4 PS2525-1, PS2525L-1 *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 PS2525-1,-2,-4,PS2525L-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. TYP. MAX. Unit 1.7 V Forward Voltage VF IF = ±100 mA 1.3 Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 140 Transistor Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio CTR IF = ±100 mA, VCE = 3 V 20 *1 CTR1/ CTR2 IF = ±100 mA, VCE = 3 V 0.3 Collector Saturation Voltage VCE (sat) IF = ±100 mA, IC = 4 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 tr CTR Ratio Rise Time Fall Time *2 1.0 pF 100 nA 80 % 3.0 0.3 Ω 11 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω tf V 0.6 pF 3 µs 5 *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 IF1 IF2 IF2 VCE *2 Test circuit for switching time IF Pulse input VCC (PW = 100 µ s, Duty cycle = 1/10) VOUT 50 Ω RL = 100 Ω 5 PS2525-1,-2,-4,PS2525L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 250 200 PS2525-1 PS2525L-1 150 100 2.5 mW/˚C PS2525-2, -4 PS2525L-2, -4 2.0 mW/˚C 50 25 0 50 75 100 125 150 PS2525-1 PS2525L-1 100 1.5 mW/˚C PS2525-2, -4 PS2525L-2, -4 50 0 1.2 mW/˚C 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 125 150 10 TA = +100 ˚C +75 ˚C +50 ˚C Forward Current IF (mA) Forward Current IF (mA) 100 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 1 0.1 100 50 0 –50 –100 0.6 0.8 1.0 1.2 1.4 –1.0 –0.5 0.0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 10 000 IF = 50 mA 1 000 100 VCE = 80 V 40 V 24 V 10 10 V 5V 1 0.1 –60 –40 –20 0 20 40 60 Ambient Temperature TA (˚C) 6 –150 –1.5 1.6 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.4 80 100 20 mA 10 mA 10 5 5 mA 2 mA 1 mA 1 0.5 0.1 0.05 0.01 0.0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE (sat) (V) 1.0 PS2525-1,-2,-4,PS2525L-1,-2,-4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 70 Collector Current IC (mA) 60 50 mA 50 mA = IF 20 mA 10 40 30 5 mA 20 10 2 0 4 6 8 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 100 mA, VCE = 3 V 100 25 50 75 0.2 0.0 –50 –25 0 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 250 100 VCE = 3 V VCC = 10 V, IC = 2 mA 50 200 Sample A B C 150 Switching Time t ( µ s) Current Transfer Ratio CTR (%) 10 ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 1.4 100 50 0 0.1 0.5 1 5 10 tf tr 5 1 50 50 100 10 ton toff 100 Forward Current IF (mA) 200 500 2k 1k Load Resistance RL (Ω) LONG TERM CTR DEGRADATION FREQUENCY RESPONSE 1.2 –3 –6 –9 RL = 100 Ω 1 kΩ 50 Ω 330 µF VCC = 5 V IC = RL 2 mA –12 100 500 Ω 500 1 k 5 k 10 k Frequency f (Hz) 50 k 100 k CTR (Relative Value) Normalized Gain GV 0 1.0 IF = 5 mA 0.8 20 mA 0.6 40 mA 0.4 0.2 500 k 0.0 CTR Test condition IF = 5 mA, VCE = 5 V 1 102 103 104 105 106 Time (Hr) Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed. 7 PS2525-1,-2,-4,PS2525L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2525L-1-E3, F3 PS2525L-1-E4, F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2525L-1-E3, E4: φ 250 PS2525L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2525L-1-E3, E4 1 000 pcs/reel PS2525L-1-F3, F4 2 000 pcs/reel 8 PS2525-1,-2,-4,PS2525L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS2525L-2-E3 PS2525L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2525-1,-2,-4,PS2525L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2525-1,-2,-4,PS2525L-1,-2,-4 [MEMO] 11 PS2525-1,-2,-4,PS2525L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5