INFINEON Q6800

NPN Silicon AF Transistor
SMBTA 20
High DC current gain
● Low collector-emitter saturation voltage
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
SMBTA 20
s1C
Q6800-A6477
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
40
V
Emitter-base voltage
VEB0
4
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Total power dissipation, TS = 71 ˚C
Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
310
Junction - soldering point
Rth JS
≤
240
mA
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 20
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
V(BR)CE0
40
–
–
V
Emitter-base breakdown voltage
IE = 100 µA
V(BR)EB0
4
–
–
Collector-base cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
–
–
–
–
100
20
nA
µA
Emitter-base cutoff current
VEB = 4 V
IEB0
–
–
20
nA
DC current gain
IC = 5 mA, VCE = 10 V
hFE
40
–
400
–
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
VCEsat
–
–
0.25
V
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
125
–
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
–
4
pF
AC characteristics
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBTA 20
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
f = 1 MHz
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V, f = 100 MHz
Semiconductor Group
3
SMBTA 20
Base-emitter saturation voltage
IC = f (VBE sat), hFE = 20
Collector-emitter saturation voltage
IC = f (VCE sat), hFE = 20
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
DC current gain hFE = f (IC)
VCE = 1 V
Semiconductor Group
4