RB521ZS8A30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 Schottky Barrier Diodes RB521ZS8A30 [ Product description ] Outline ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. Features EUltra-small mold type. EMulti-diodes package. Product specifications 1.6x0.8(t=0.3) Absolute maximum ratings (Ta=25ºC) Rated parameters Dimensions Standard value Conditions Repetitive peak reverse voltage VRM(V) 30 Reverse voltage(DC) VR(V) 30 Average rectified forward current IO(A) 0.1 Forward current surge peak IFSM(A) 0.5 60Hz/1cyc Junction temperature Tj(ºC) 150 Storage temperature Tstg(ºC) -55 to +150 Equivalent circuit diagram *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Copyright © 1997-2010 ROHM CO.,LTD. http://www.rohm.com/products/discrete/diode/schottky_barrier/rb521zs8a30/print.html 6/17/2010