RFUS20NS4S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 Super Fast Recovery Diodes RFUS20NS4S [ Product description ] Outline ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss. Features EPower mold type. EUltra-low Reverse recovery energy. 10.1x9.0(t=4.5) Product specifications Dimensions Absolute maximum ratings (Ta=25ºC) Rated parameters Standard value Conditions Repetitive peak reverse voltage VRM(V) 430 Reverse voltage(DC) VR(V) 430 Forward current IF Average rectified forward current IO(A) 20 Forward current surge peak IFSM(A) 100 60Hz/1cyc Junction temperature Tj(ºC) 150 Storage temperature Tstg(ºC) -55 to +150 Equivalent circuit diagram *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Copyright © 1997-2010 ROHM CO.,LTD. http://www.rohm.com/products/discrete/diode/fast_recovery/rfus20ns4s/print.html 6/17/2010