Preliminary Datasheet RJK0346DPA Silicon N Channel Power MOS FET Power Switching REJ03G1642-0210 Rev.2.10 May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 30 20 65 260 65 Unit V V A A A IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg 35 122.5 65 1.92 150 –55 to +150 A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C REJ03G1642-0210 Rev.2.10 May 12, 2010 Page 1 of 6 RJK0346DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 1.5 1.9 130 7650 1500 470 1.2 49 18.7 10.5 15 7 86.5 Max — 0.1 1 2.5 2.0 2.7 — — — — — — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 20 0.80 45 — 1.04 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VGS = 10 V Note4 ID = 32.5 A, VGS = 4.5 V Note4 ID = 32.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 65 A VGS = 10 V, ID = 32.5 A, VDD 10 V, RL = 0.31 , Rg = 4.7 IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test REJ03G1642-0210 Rev.2.10 May 12, 2010 Page 2 of 6 RJK0346DPA Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 60 10 s 20 50 100 150 10 1 Tc = 25°C 0.1 1 shot Pulse 0.1 1 200 10 100 Drain to Source Voltage Tc (°C) VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 100 Pulse Test VDS = 10 V Pulse Test 3.0 V ID (A) 4.5 V 80 PW = 10 ms Operation in this area is limited by RDS(on) on ati er Op Drain Current 40 Case Temperature 10 V 60 80 60 Drain Current ID (A) 0μ 1 ms 0 Drain Current μs 10 100 DC Channel Dissipation Pch (W) 80 2.8 V 40 VGS = 2.6 V 20 40 25°C 20 Tc = 75°C –25°C 2 4 6 Drain to Source Voltage 8 Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 60 40 ID = 20 A 20 10 A 5A 0 4 8 12 Gate to Source Voltage REJ03G1642-0210 Rev.2.10 May 12, 2010 16 20 VGS (V) 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 80 0 10 Static Drain to Source On State Resistance RDS (on) (mΩ) 0 5 VGS (V) Static Drain to Source On State Resistance vs. Drain Current 10 Pulse Test 3 VGS = 4.5 V 10 V 1 0.3 0.1 1 3 10 30 Drain Current 100 ID 300 1000 (A) Page 3 of 6 Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test Ciss 3000 8 Capacitance C (pF) Static Drain to Source On State Resistance RDS (on) (mΩ) RJK0346DPA 6 ID = 5 A, 10 A, 20 A 4 VGS = 4.5 V 2 Coss 1000 Crss 300 100 30 0 –25 5 A, 10 A, 20 A 10 V 0 25 50 75 10 0 100 125 150 Case Temperature Tc (°C) 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 40 80 Gate Charge 120 30 0 200 160 100 Reverse Drain Current IDR (A) 30 VGS (V) 16 Gate to Source Voltage VDS (V) Drain to Source Voltage VGS VDD = 25 V 10 V 40 20 Reverse Drain Current vs. Source to Drain Voltage 20 ID = 65 A 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 VGS = 0 f = 1 MHz Pulse Test 10 V 80 5V 60 40 VGS = 0, –5V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Qg (nc) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 200 IAP = 35 A VDD = 15 V 160 duty < 0.1 % Rg ≥ 50 Ω 120 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1642-0210 Rev.2.10 May 12, 2010 Page 4 of 6 RJK0346DPA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.3 0.5 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.92°C/W, Tc = 25°C 0.1 0.05 2 0.0 se ul 1 0 0. ot p h 1s 0.03 0.01 10 μ D= PDM PW T PW T 100 μ 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) REJ03G1642-0210 Rev.2.10 May 12, 2010 10% tr 90% td(off) tf Page 5 of 6 RJK0346DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DC-A Previous Code WPAK(2)V MASS[Typ.] 0.07g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(2) 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.6 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.545Typ 0.7Typ 0.04Min 0.4 ± 0.06 4.90 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. RJK0346DPA-00-J0 Quantity 2500 pcs REJ03G1642-0210 Rev.2.10 May 12, 2010 Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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