RICHTEK RT9602

RT9602
Preliminary
Dual Channel Synchronous-Rectified Buck MOSFET Driver
General Description
Features
The RT9602 is a, twin power channel MOSFET driver
z
Drives Four N-Channel MOSFETs
specifically designed to drive four power N-Channel
z
Adaptive Shoot-Through Protection
MOSFETs in a synchronous-rectified buck converter
z
Internal Bootstrap Devices
topology.
a
z
Small 14-Lead SOIC Package
RT9237/RT9241 series of Multi-Phase Buck PWM
z
5V to 12V Gate-Drive Voltages for Optimal
These
drivers
combined
with
controller provide a complete core voltage regulator
solution for advanced microprocessors.
Efficiency
z
Tri-State Input for Bridge Shutdown
The RT9602 can provide flexible gate driving for both
z
Supply Under-Voltage Protection
high side and low side drivers. This gives more
z
Power ON Over-Voltage Protection
flexibility of MOSFET selection.
Applications
The output drivers in the RT9602 have the capability
z
to drive a 3000pF load with a 40ns propagation delay
Core Voltage Supplies for Intel Pentium 4 and
AMD Athlon
TM
Microprocessors
and 80ns transition time. This device implements
z
High Frequency Low Profile DC-DC Converters
bootstrapping on the upper gates with only a single
z
High Current Low Voltage DC-DC Converters
external capacitor required for each power channel.
This reduces implementation complexity and allows
the use of higher performance, cost effective, NChannel
MOSFETs.
Adaptive
shoot-through
protection is integrated to prevent both MOSFETs
from conducting simultaneously.
The RT9602 can detect high side MOSFET drain-tosource electrical short at power on and pull the 12V
power by low side MOS and cause power supply to
go into over current shutdown to prevent damage of
Pin Configurations
Part Number
Pin Configurations
RT9602CS
(Plastic SOP-14)
TOP VIEW
PWM1
PWM2
GND
1
14
VCC
2
13
3
12
PHASE1
UGATE1
LGATE1
PVCC
4
11
BOOT1
5
10
PGND
6
9
LGATE2
7
8
BOOT2
UGATE2
PHASE2
CPU.
Ordering Information
RT9602… …
Package type
S : SOP-14
Operating temperature range
C: Commercial standard
DS9602-00 January 2002
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1
RT9602
Preliminary
Pin Description
Pin No. Pin Name
1
PWM1
Channel 1 PWM Input
2
PWM2
Channel 2 PWM Input
3
GND
Ground Pin
4
LGATE1
Lower Gate Drive of Channel 1
5
PVCC
Upper and Lower Gate Driver Power Rail
6
PGND
Lower Gate Driver Ground Pin
7
LGATE2
Lower Gate Drive of Channel 2
8
PHASE2
Connect this pin to phase point of channel 2.
Phase point is the connection point of high side MOSFET source and low side MOSFET drain
9
UGATE2
Upper Gate Drive of Channel 2
10
BOOT2
Floating Bootstrap Supply Pin of Channel 2
11
BOOT1
Floating Bootstrap Supply Pin of Channel 1
12
UGATE1
Upper Gate Drive of Channel 1
13
PHASE1
14
VCC
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2
Pin Function
Connect this pin to phase point of channel 1.
Phase point is the connection point of high side MOSFET source and low side MOSFET drain
Control Logic Power Supply
DS9602-00 January 2002
RT9602
Preliminary
Function Block Diagram
VCC
PVCC
Internal
5V
BOOT1
19K
Shoot-through
Protection
PWM1
UGATE1
PHASE1
19K
Power-on OVP
PVCC
Shoot-through
Protection
Control
Logic
Internal
5V
LGATE1
PGND
PGND
BOOT2
PVCC
Shoot-through
Protection
UGATE2
PHASE2
19K
Power-on OVP
PWM2
PVCC
19K
Shoot-through
Protection
LGATE2
GND
PGND
DS9602-00 January 2002
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3
RT9602
Preliminary
Absolute Maximum Ratings
z
Supply Voltage (VCC)
15V
z
Supply Voltage (PVCC)
VCC + 0.3V
z
BOOT Voltage (VBOOT-VPHASE)
15V
z
Input Voltage (VPWM)
GND–0.3V to 7V
z
UGATE
VPHASE-0.3V to VBOOT+0.3V
z
LGATE
GND-0.3V to VPVCC+0.3V
z
Package Thermal Resistance
SOP-14, θJA
160°C /W
z
Ambient Temperature
0°C ~ 70°C
z
Junction Temperature
0°C ~ 125°C
z
Storage Temperature Range
-40°C ~ 150°C
z
Lead Temperature (Soldering, 10 sec.)
260°C
z
ESD Level
HBM
2KV
MM
200V
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
VCC Supply Current
Bias Supply Current
IVCC
fPWM = 250KHz, VPVCC = 12V,
Cboot = 0.1µF, Rphase = 20Ω
--
3
--
mA
Power Supply Current
IPVCC
fPWM = 250kHz, VPVCC = 12V,
Cboot = 0.1µF, Rphase = 20Ω
--
8
--
mA
VCC Rising Threshold
9.1
9.6
10
V
VCC Falling Threshold
7.5
8.1
8.5
V
Power-On Reset
PWM Input
Maximum Input Current
VPWM = 0 or 5V
--
200
--
µA
PWM Floating Voltage
Vcc=12V
--
1.9
--
V
PWM Rising Threshold
--
3.7
--
V
PWM Falling Threshold
--
1.1
--
V
UGATE Rise Time
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
LGATE Rise Time
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
UGATE Fall Time
VPVCC = VVCC = 12V, 3nF load
--
40
--
ns
LGATE Fall Time
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
UGATE Turn-Off Propagation Delay
VVCC = VPVCC = 12V, 3nF load
--
60
--
ns
LGATE Turn-Off Propagation Delay
VVCC = VPVCC = 12V, 3nF load
--
45
--
ns
1.1
--
3.7
V
Shutdown Window
To be continued
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DS9602-00 January 2002
RT9602
Preliminary
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output
Upper Drive Source
RUGATE VVCC = 12V, VPVCC = 12V
--
1.5
--
Ω
Upper Drive Sink
RUGATE VVCC = 12V, VPVCC = 12V
--
1.45
2
Ω
Lower Drive Source
RLGATE VVCC = 12V, VPVCC = 12V
--
1.6
--
Ω
Lower Drive Sink
RLGATE VVCC = VPVCC = 12V
--
0.75
1
Ω
Operation Descriptions
The RT9602 has power on protection function which
held UGATE and LGATE low before VCC up across
the rising threshold voltage. After the initialization, the
PWM signal takes the control. The rising PWM signal
first forces the LGATE signal turns low then UGATE
signal is allowed to go high just after a nonoverlapping time to avoid shoot-through current. The
falling of PWM signal first forces UGATE to go low.
When
UGATE
and
PHASE
signal
reach
a
The RT9602 implements a power on over-voltage
protection function. If the PHASE voltage exceeds
1.5V at power on, the LGATE would be turn on to pull
the PHASE low until the PHASE voltage goes below
1.5V. Such function can protect the CPU from
damage by some short condition happened before
power on, which is sometimes encountered in the
M/B manufacturing line.
predetermined low level, LGATE signal is allowed to
turn high. The non-overlapping function is also
presented between UGATE and LGATE signal
transient.
The PWM signal is recognized as high if above rising
threshold and as low if below falling threshold. Any
signal level in this window is considered as tri-state,
which causes turn-off of both high side and low-side
MOSFET.
When
PWM
input
is
floating
(not
connected), internal divider will pull the PWM to 1.9V
to give the controller a recognizable level. The
maximum sink/source capability of internal PWM
reference is 60µA.
The PVCC pin provides flexibility of both high side
and low side MOSFET gate drive voltages. If 8V, for
example, is applied to PVCC, then high side
MOSFET
gate
drive
is
8V-1.5V(approximately,
internal diode plus series resistance voltage drop).
The low side gate drive voltage is exactly 8V.
DS9602-00 January 2002
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5
12V
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6
18K
2.4K
+5V
3K
66pF
15K
4
VID1
9
0.1µF
10
2.4K
SS
13
14
12
18
17
19
20
PWM2
ISN2
16
11
ISP2 15
RT9241
DVD
GND
8 ADJ
ISN1
ISP1
PWM1
PGOOD
VDD
VSEN
COMP
VID0
VID1
VID2
VID3
VID4
FB
7
6
5
3
VID2
VID0
2
VID3
VID4
1
1µF
3K
3K
3K
3K
+5V
PGOOD
10K
2µH
2µH
1000µF
×1500µF
1000µF
×1500µF
1.2µH
VCORE
12V
PHB95N03LT
1µF
PHB83N03LT
1µF
PHB95N03LT
PHB83N03LT
1µF
11
UGATE2
PGND
10
6
GND 3
7 LGATE2
BOOT2
8 PHASE2
9
PWM2
2
PWM1 1
PVCC 5
14
VCC
RT9602
PHASE1
UGATE1
BOOT1
4 LGATE1
13
12
1µF
1µF
10Ω
12V
RT9602
Preliminary
Typical Application Circuit
DS9602-00 January 2002
RT9602
Preliminary
Package Information
H
M
B
B
J
A
C
F
Symbol
D
I
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
8.534
8.738
0.336
0.344
B
3.810
3.988
0.150
0.157
C
1.346
1.753
0.053
0.069
D
0.330
0.508
0.013
0.020
F
1.194
1.346
0.047
0.053
H
0.178
0.254
0.007
0.010
I
0.102
0.254
0.004
0.010
J
5.791
6.198
0.228
0.244
M
0.406
1.270
0.016
0.050
14–Lead SOP Plastic Package
DS9602-00 January 2002
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7
RT9602
Preliminary
RICHTEK TECHNOLOGY CORP.
RICHTEK TECHNOLOGY CORP.
Headquarter
Taipei Office (Marketing)
6F, No. 35, Hsintai Road, Chupei City
8F-1, No. 137, Lane 235, Paochiao Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5510047 Fax: (8863)5537749
Tel: (8862)89191466 Fax: (8862)89191465
Email: [email protected]
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8
DS9602-00 January 2002