SII S-80808CNNB-B8Z-T2

Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION
VOLTAGE DETECTOR
S-808xxC Series
The S-808xxC series is a series of high-precision
voltage detectors developed using CMOS process. The
detection voltage is fixed internally with an accuracy of
±2.0%. Two output forms, Nch open-drain and CMOS
output, are available. Ultra-low current consumption
and miniature package lineup can meet demand from
the portable device applications.
„ Features
• Ultra-low current consumption
•
•
•
•
•
1.3 µA typ. (detection voltage≤1.4 V, at VDD=1.5 V)
0.8 µA typ. (detection voltage≥1.5 V, at VDD=3.5 V)
High-precision detection voltage ±2.0 %
Operating voltage range
0.65 V to 5.0 V (detection voltage≤1.4 V)
0.95 V to 10.0 V (detection voltage≥1.5 V)
Hysteresis characteristics
5 % typ.
Detection voltage
0.8 V to 6.0 V (0.1 V step)
Output form
Nch open-drain output (Active Low)
CMOS output (Active Low)
„ Applications
• Battery checkers
• Power failure detectors
• Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote
controllers.
• Constant voltage power monitor for cameras, video equipments and communication devices.
• Power monitor for microcomputers and reset for CPUs.
„ Packages
Package name
SC-82AB
SOT-23-5
SOT-89-3
SNT-4A
TO-92 (Bulk)
TO-92 (Tape and reel)
TO-92 (Tape and ammo)
Package
NP004-A
MP005-A
UP003-A
PF004-A
YS003-B
YF003-A
YF003-A
Drawing code
Tape
Reel
NP004-A
NP004-A
MP005-A
MP005-A
UP003-A
UP003-A
PF004-A
PF004-A


YF003-A
YF003-A
YZ003-C

Seiko Instruments Inc.
Zigzag






YZ003-C
1
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Block Diagrams
1. Nch Open-drain Output Products
VDD
−
*1
OUT
+
*1
VREF
VSS
*1. Parasitic diode
Figure 1
2. CMOS Output Products
VDD
*1
−
*1
+
*1
VREF
VSS
*1. Parasitic diode
Figure 2
2
OUT
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request.
Refer to the "1. Product Name" for the construction of the product name and "2. Product Name List" for the
full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5, SOT-89-3 packages
S-808xx
Cx
xx
−
xxx
−
T2
*1
IC detection in tape specifications
T2: SC-82AB, SOT-23-5, SOT-89-3
*2
Product code
Package code
NB: SC-82AB
MC: SOT-23-5
UA: SOT-89-3
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the taping specifications at the end of this book. T2 is the standard.
*2. Refer to the Table 1 and 3 in the “2. Product Name List”
1-2. SNT-4A packages
S-808xx
Cx
PF
−
xxx
TF
G
Fixed
IC detection in tape specifications
TF: SNT-4A
Product code
*1
*2
Package code
PF: SNT-4A
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the taping specifications at the end of this book. TF is the standard.
*2. Refer to the Table 2 and 4 in the “2. Product Name List”
Seiko Instruments Inc.
3
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
1-3. TO-92 package
S-808xx
C
xY−x
Packing form
B: Bulk
T: Tape and reel
Z: Tape and ammo
Package code
Y: TO-92
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
15 to 60
(e.g. When the detection voltage is 1.5 V,
it is expressed as 15.)
2. Product Name List
2-1. Nch Open-drain Output Products
Table 1 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
4
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*1
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
SC-82AB
SOT-23-5
SOT-89-3
S-80808CNNB-B9M-T2
S-80809CNNB-B9N-T2
S-80810CNNB-B9O-T2
S-80811CNNB-B9P-T2
S-80812CNNB-B9Q-T2
S-80813CNNB-B9R-T2
S-80814CNNB-B9S-T2
S-80815CNNB-B8A-T2
S-80816CNNB-B8B-T2
S-80817CNNB-B8C-T2
S-80818CNNB-B8D-T2
S-80819CNNB-B8E-T2
S-80820CNNB-B8F-T2
S-80821CNNB-B8G-T2
S-80822CNNB-B8H-T2
S-80823CNNB-B8I-T2
S-80824CNNB-B8J-T2

S-80825CNNB-B8K-T2
S-80826CNNB-B8L-T2
S-80827CNNB-B8M-T2
S-80828CNNB-B8N-T2
S-80829CNNB-B8O-T2
S-80830CNNB-B8P-T2
S-80831CNNB-B8Q-T2







S-80815CNMC-B8A-T2
S-80816CNMC-B8B-T2
S-80817CNMC-B8C-T2
S-80818CNMC-B8D-T2
S-80819CNMC-B8E-T2
S-80820CNMC-B8F-T2
S-80821CNMC-B8G-T2
S-80822CNMC-B8H-T2
S-80823CNMC-B8I-T2
S-80824CNMC-B8J-T2

S-80825CNMC-B8K-T2
S-80826CNMC-B8L-T2
S-80827CNMC-B8M-T2
S-80828CNMC-B8N-T2
S-80829CNMC-B8O-T2
S-80830CNMC-B8P-T2
S-80831CNMC-B8Q-T2







S-80815CNUA-B8A-T2
S-80816CNUA-B8B-T2
S-80817CNUA-B8C-T2
S-80818CNUA-B8D-T2
S-80819CNUA-B8E-T2
S-80820CNUA-B8F-T2
S-80821CNUA-B8G-T2
S-80822CNUA-B8H-T2
S-80823CNUA-B8I-T2
S-80824CNUA-B8J-T2
S-80824KNUA-D2B-T2*2
S-80825CNUA-B8K-T2
S-80826CNUA-B8L-T2
S-80827CNUA-B8M-T2
S-80828CNUA-B8N-T2
S-80829CNUA-B8O-T2
S-80830CNUA-B8P-T2
S-80831CNUA-B8Q-T2
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 1 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range
(Typ.)
0.160 V
S-80832CNNB-B8R-T2
S-80832CNMC-B8R-T2
S-80832CNUA-B8R-T2
3.2 V±2.0 %
0.165 V
S-80833CNNB-B8S-T2
S-80833CNMC-B8S-T2
S-80833CNUA-B8S-T2
3.3 V±2.0 %
0.170 V
S-80834CNNB-B8T-T2
S-80834CNMC-B8T-T2
S-80834CNUA-B8T-T2
3.4 V±2.0 %
0.175 V
S-80835CNNB-B8U-T2
S-80835CNMC-B8U-T2
S-80835CNUA-B8U-T2
3.5 V±2.0 %
0.180 V
S-80836CNNB-B8V-T2
S-80836CNMC-B8V-T2
S-80836CNUA-B8V-T2
3.6 V±2.0 %
0.185 V
S-80837CNNB-B8W-T2
S-80837CNMC-B8W-T2
S-80837CNUA-B8W-T2
3.7 V±2.0 %
0.190 V
S-80838CNNB-B8X-T2
S-80838CNMC-B8X-T2
S-80838CNUA-B8X-T2
3.8 V±2.0 %
0.195 V
S-80839CNNB-B8Y-T2
S-80839CNMC-B8Y-T2
S-80839CNUA-B8Y-T2
3.9 V±2.0 %
0.200 V
S-80840CNNB-B8Z-T2
S-80840CNMC-B8Z-T2
S-80840CNUA-B8Z-T2
4.0 V±2.0 %
0.205 V
S-80841CNNB-B82-T2
S-80841CNMC-B82-T2
S-80841CNUA-B82-T2
4.1 V±2.0 %
0.210 V
S-80842CNNB-B83-T2
S-80842CNMC-B83-T2
S-80842CNUA-B83-T2
4.2 V±2.0 %
0.215
V
S-80843CNNB-B84-T2
S-80843CNMC-B84-T2
S-80843CNUA-B84-T2
4.3 V±2.0 %
0.220 V
S-80844CNNB-B85-T2
S-80844CNMC-B85-T2
S-80844CNUA-B85-T2
4.4 V±2.0 %
0.225 V
S-80845CNNB-B86-T2
S-80845CNMC-B86-T2
S-80845CNUA-B86-T2
4.5 V±2.0 %
0.230 V
S-80846CNNB-B87-T2
S-80846CNMC-B87-T2
S-80846CNUA-B87-T2
4.6 V±2.0 %
0.10 V max.
S-80846KNUA-D2C-T2*3
4.6 V± 0.10 V


0.235 V
S-80847CNNB-B88-T2
S-80847CNMC-B88-T2
S-80847CNUA-B88-T2
4.7 V±2.0 %
0.240 V
S-80848CNNB-B89-T2
S-80848CNMC-B89-T2
S-80848CNUA-B89-T2
4.8 V±2.0 %
0.245 V
S-80849CNNB-B9A-T2
S-80849CNMC-B9A-T2
S-80849CNUA-B9A-T2
4.9 V±2.0 %
0.250 V
S-80850CNNB-B9B-T2
S-80850CNMC-B9B-T2
S-80850CNUA-B9B-T2
5.0 V±2.0 %
0.255 V
S-80851CNNB-B9C-T2
S-80851CNMC-B9C-T2
S-80851CNUA-B9C-T2
5.1 V±2.0 %
0.260 V
S-80852CNNB-B9D-T2
S-80852CNMC-B9D-T2
S-80852CNUA-B9D-T2
5.2 V±2.0 %
0.265
V
S-80853CNNB-B9E-T2
S-80853CNMC-B9E-T2
S-80853CNUA-B9E-T2
5.3 V±2.0 %
0.270 V
S-80854CNNB-B9F-T2
S-80854CNMC-B9F-T2
S-80854CNUA-B9F-T2
5.4 V±2.0 %
0.275 V
S-80855CNNB-B9G-T2
S-80855CNMC-B9G-T2
S-80855CNUA-B9G-T2
5.5 V±2.0 %
0.280 V
S-80856CNNB-B9H-T2
S-80856CNMC-B9H-T2
S-80856CNUA-B9H-T2
5.6 V±2.0 %
0.285 V
S-80857CNNB-B9I-T2
S-80857CNMC-B9I-T2
S-80857CNUA-B9I-T2
5.7 V±2.0 %
0.290 V
S-80858CNNB-B9J-T2
S-80858CNMC-B9J-T2
S-80858CNUA-B9J-T2
5.8 V±2.0 %
0.295 V
S-80859CNNB-B9K-T2
S-80859CNMC-B9K-T2
S-80859CNUA-B9K-T2
5.9 V±2.0 %
0.300 V
S-80860CNNB-B9L-T2
S-80860CNMC-B9L-T2
S-80860CNUA-B9L-T2
6.0 V±2.0 %
*1. Describes the release voltage.
*2. Refer to the Table 18 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
*3. Refer to the Table 20 in “„ Electricala Characteristics for Customized Products” for electrical characteristics
Seiko Instruments Inc.
5
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 2 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.5 V±2.0 %
4.6 V±2.0 %
4.6 V±0.10 V
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
6
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*2
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
0.225 V
0.230 V
0.10 V max.
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
SNT-4A
TO-92*1
S-80808CNPF-B9MTFG
S-80809CNPF-B9NTFG
S-80810CNPF-B9OTFG
S-80811CNPF-B9PTFG
S-80812CNPF-B9QTFG
S-80813CNPF-B9RTFG
S-80814CNPF-B9STFG
S-80815CNPF-B8ATFG
S-80816CNPF-B8BTFG
S-80817CNPF-B8CTFG
S-80818CNPF-B8DTFG
S-80819CNPF-B8ETFG
S-80820CNPF-B8FTFG
S-80821CNPF-B8GTFG
S-80822CNPF-B8HTFG
S-80823CNPF-B8ITFG
S-80824CNPF-B8JTFG

S-80825CNPF-B8KTFG
S-80826CNPF-B8LTFG
S-80827CNPF-B8MTFG
S-80828CNPF-B8NTFG
S-80829CNPF-B8OTFG
S-80830CNPF-B8PTFG
S-80831CNPF-B8QTFG
S-80832CNPF-B8RTFG
S-80833CNPF-B8STFG
S-80834CNPF-B8TTFG
S-80835CNPF-B8UTFG
S-80836CNPF-B8VTFG
S-80837CNPF-B8WTFG
S-80838CNPF-B8XTFG
S-80839CNPF-B8YTFG
S-80840CNPF-B8ZTFG
S-80841CNPF-B82TFG
S-80842CNPF-B83TFG
S-80843CNPF-B84TFG
S-80844CNPF-B85TFG
S-80845CNPF-B86TFG
S-80846CNPF-B87TFG

S-80847CNPF-B88TFG
S-80848CNPF-B89TFG
S-80849CNPF-B9ATFG
S-80850CNPF-B9BTFG
S-80851CNPF-B9CTFG







S-80815CNY-x
S-80816CNY-x
S-80817CNY-x
S-80818CNY-x
S-80819CNY-x
S-80820CNY-x
S-80821CNY-x
S-80822CNY-x
S-80823CNY-x
S-80824CNY-x
S-80824KNY-x*3
S-80825CNY-x
S-80826CNY-x
S-80827CNY-x
S-80828CNY-x
S-80829CNY-x
S-80830CNY-x
S-80831CNY-x
S-80832CNY-x
S-80833CNY-x
S-80834CNY-x
S-80835CNY-x
S-80836CNY-x
S-80837CNY-x
S-80838CNY-x
S-80839CNY-x
S-80840CNY-x
S-80841CNY-x
S-80842CNY-x
S-80843CNY-x
S-80844CNY-x
S-80845CNY-x
S-80846CNY-x
S-80846KNY-x*4
S-80847CNY-x
S-80848CNY-x
S-80849CNY-x
S-80850CNY-x
S-80851CNY-x
Seiko Instruments Inc.
Rev.3.2_00
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 2 (2/2)
Detection
Hysteresis width
SNT-4A
TO-92*1
voltage range
(Typ.)
0.260 V
S-80852CNPF-B9DTFG
S-80852CNY-x
5.2 V±2.0 %
0.265 V
S-80853CNPF-B9ETFG
S-80853CNY-x
5.3 V±2.0 %
0.270 V
S-80854CNPF-B9FTFG
S-80854CNY-x
5.4 V±2.0 %
0.275 V
S-80855CNPF-B9GTFG
S-80855CNY-x
5.5 V±2.0 %
0.280 V
S-80856CNPF-B9HTFG
S-80856CNY-x
5.6 V±2.0 %
0.285 V
S-80857CNPF-B9ITFG
S-80857CNY-x
5.7 V±2.0 %
0.290 V
S-80858CNPF-B9JTFG
S-80858CNY-x
5.8 V±2.0 %
0.295 V
S-80859CNPF-B9KTFG
S-80859CNY-x
5.9 V±2.0 %
0.300 V
S-80860CNPF-B9LTFG
S-80860CNY-x
6.0 V±2.0 %
*1. x changes according to the packing form in TO-92. S: Bulk, F: Tape and reel, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 18 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
*4. Refer to the Table 20 in “„ Electricala Characteristics for Customized Products” for electrical characteristics
Seiko Instruments Inc.
7
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2-2. CMOS Output Products
Table 3 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.45 V typ.
4.5 V±2.0 %
4.6 V±2.0 %
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
8
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
4.70 V max.*1
0.225 V
0.230 V
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
SC-82AB
SOT-23-5
SOT-89-3
S-80808CLNB-B7M-T2
S-80809CLNB-B7N-T2
S-80810CLNB-B7O-T2
S-80811CLNB-B7P-T2
S-80812CLNB-B7Q-T2
S-80813CLNB-B7R-T2
S-80814CLNB-B7S-T2
S-80815CLNB-B6A-T2
S-80816CLNB-B6B-T2
S-80817CLNB-B6C-T2
S-80818CLNB-B6D-T2
S-80819CLNB-B6E-T2
S-80820CLNB-B6F-T2
S-80821CLNB-B6G-T2
S-80822CLNB-B6H-T2
S-80823CLNB-B6I-T2
S-80824CLNB-B6J-T2
S-80825CLNB-B6K-T2
S-80826CLNB-B6L-T2
S-80827CLNB-B6M-T2
S-80828CLNB-B6N-T2
S-80829CLNB-B6O-T2
S-80830CLNB-B6P-T2
S-80831CLNB-B6Q-T2
S-80832CLNB-B6R-T2
S-80833CLNB-B6S-T2
S-80834CLNB-B6T-T2
S-80835CLNB-B6U-T2
S-80836CLNB-B6V-T2
S-80837CLNB-B6W-T2
S-80838CLNB-B6X-T2
S-80839CLNB-B6Y-T2
S-80840CLNB-B6Z-T2
S-80841CLNB-B62-T2
S-80842CLNB-B63-T2
S-80843CLNB-B64-T2
S-80844CLNB-B65-T2

S-80845CLNB-B66-T2
S-80846CLNB-B67-T2
S-80847CLNB-B68-T2
S-80848CLNB-B69-T2
S-80849CLNB-B7A-T2
S-80850CLNB-B7B-T2
S-80851CLNB-B7C-T2







S-80815CLMC-B6A-T2
S-80816CLMC-B6B-T2
S-80817CLMC-B6C-T2
S-80818CLMC-B6D-T2
S-80819CLMC-B6E-T2
S-80820CLMC-B6F-T2
S-80821CLMC-B6G-T2
S-80822CLMC-B6H-T2
S-80823CLMC-B6I-T2
S-80824CLMC-B6J-T2
S-80825CLMC-B6K-T2
S-80826CLMC-B6L-T2
S-80827CLMC-B6M-T2
S-80828CLMC-B6N-T2
S-80829CLMC-B6O-T2
S-80830CLMC-B6P-T2
S-80831CLMC-B6Q-T2
S-80832CLMC-B6R-T2
S-80833CLMC-B6S-T2
S-80834CLMC-B6T-T2
S-80835CLMC-B6U-T2
S-80836CLMC-B6V-T2
S-80837CLMC-B6W-T2
S-80838CLMC-B6X-T2
S-80839CLMC-B6Y-T2
S-80840CLMC-B6Z-T2
S-80841CLMC-B62-T2
S-80842CLMC-B63-T2
S-80843CLMC-B64-T2
S-80844CLMC-B65-T2

S-80845CLMC-B66-T2
S-80846CLMC-B67-T2
S-80847CLMC-B68-T2
S-80848CLMC-B69-T2
S-80849CLMC-B7A-T2
S-80850CLMC-B7B-T2
S-80851CLMC-B7C-T2







S-80815CLUA-B6A-T2
S-80816CLUA-B6B-T2
S-80817CLUA-B6C-T2
S-80818CLUA-B6D-T2
S-80819CLUA-B6E-T2
S-80820CLUA-B6F-T2
S-80821CLUA-B6G-T2
S-80822CLUA-B6H-T2
S-80823CLUA-B6I-T2
S-80824CLUA-B6J-T2
S-80825CLUA-B6K-T2
S-80826CLUA-B6L-T2
S-80827CLUA-B6M-T2
S-80828CLUA-B6N-T2
S-80829CLUA-B6O-T2
S-80830CLUA-B6P-T2
S-80831CLUA-B6Q-T2
S-80832CLUA-B6R-T2
S-80833CLUA-B6S-T2
S-80834CLUA-B6T-T2
S-80835CLUA-B6U-T2
S-80836CLUA-B6V-T2
S-80837CLUA-B6W-T2
S-80838CLUA-B6X-T2
S-80839CLUA-B6Y-T2
S-80840CLUA-B6Z-T2
S-80841CLUA-B62-T2
S-80842CLUA-B63-T2
S-80843CLUA-B64-T2
S-80844CLUA-B65-T2
S-80844KLUA-D2A-T2*2
S-80845CLUA-B66-T2
S-80846CLUA-B67-T2
S-80847CLUA-B68-T2
S-80848CLUA-B69-T2
S-80849CLUA-B7A-T2
S-80850CLUA-B7B-T2
S-80851CLUA-B7C-T2
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 3 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range
(Typ.)
0.260 V
S-80852CLNB-B7D-T2
S-80852CLMC-B7D-T2
S-80852CLUA-B7D-T2
5.2 V±2.0 %
0.265 V
S-80853CLNB-B7E-T2
S-80853CLMC-B7E-T2
S-80853CLUA-B7E-T2
5.3 V±2.0 %
0.270 V
S-80854CLNB-B7F-T2
S-80854CLMC-B7F-T2
S-80854CLUA-B7F-T2
5.4 V±2.0 %
0.275 V
S-80855CLNB-B7G-T2
S-80855CLMC-B7G-T2
S-80855CLUA-B7G-T2
5.5 V±2.0 %
0.280 V
S-80856CLNB-B7H-T2
S-80856CLMC-B7H-T2
S-80856CLUA-B7H-T2
5.6 V±2.0 %
0.285 V
S-80857CLNB-B7I-T2
S-80857CLMC-B7I-T2
S-80857CLUA-B7I-T2
5.7 V±2.0 %
0.290 V
S-80858CLNB-B7J-T2
S-80858CLMC-B7J-T2
S-80858CLUA-B7J-T2
5.8 V±2.0 %
0.295 V
S-80859CLNB-B7K-T2
S-80859CLMC-B7K-T2
S-80859CLUA-B7K-T2
5.9 V±2.0 %
0.300 V
S-80860CLNB-B7L-T2
S-80860CLMC-B7L-T2
S-80860CLUA-B7L-T2
6.0 V±2.0 %
*1. Describes the release voltage.
*2. Refer to the Table 19 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
Table 4 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
SNT-4A
TO-92*1
S-80808CLPF-B7MTFG
S-80809CLPF-B7NTFG
S-80810CLPF-B7OTFG
S-80811CLPF-B7PTFG
S-80812CLPF-B7QTFG
S-80813CLPF-B7RTFG
S-80814CLPF-B7STFG
S-80815CLPF-B6ATFG
S-80816CLPF-B6BTFG
S-80817CLPF-B6CTFG
S-80818CLPF-B6DTFG
S-80819CLPF-B6ETFG
S-80820CLPF-B6FTFG
S-80821CLPF-B6GTFG
S-80822CLPF-B6HTFG
S-80823CLPF-B6ITFG
S-80824CLPF-B6JTFG
S-80825CLPF-B6KTFG
S-80826CLPF-B6LTFG
S-80827CLPF-B6MTFG
S-80828CLPF-B6NTFG
S-80829CLPF-B6OTFG
S-80830CLPF-B6PTFG
S-80831CLPF-B6QTFG
S-80832CLPF-B6RTFG
S-80833CLPF-B6STFG
S-80834CLPF-B6TTFG
S-80835CLPF-B6UTFG
S-80836CLPF-B6VTFG
S-80837CLPF-B6WTFG
S-80838CLPF-B6XTFG







S-80815CLY-x
S-80816CLY-x
S-80817CLY-x
S-80818CLY-x
S-80819CLY-x
S-80820CLY-x
S-80821CLY-x
S-80822CLY-x
S-80823CLY-x
S-80824CLY-x
S-80825CLY-x
S-80826CLY-x
S-80827CLY-x
S-80828CLY-x
S-80829CLY-x
S-80830CLY-x
S-80831CLY-x
S-80832CLY-x
S-80833CLY-x
S-80834CLY-x
S-80835CLY-x
S-80836CLY-x
S-80837CLY-x
S-80838CLY-x
Seiko Instruments Inc.
9
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
Table 4 (2/2)
Detection
Hysteresis width
SNT-4A
TO-92*2
voltage range
(Typ.)
0.195 V
S-80839CLPF-B6YTFG
S-80839CLY-x
3.9 V±2.0 %
0.200 V
S-80840CLPF-B6ZTFG
S-80840CLY-x
4.0 V±2.0 %
0.205 V
S-80841CLPF-B62TFG
S-80841CLY-x
4.1 V±2.0 %
0.210 V
S-80842CLPF-B63TFG
S-80842CLY-x
4.2 V±2.0 %
0.215 V
S-80843CLPF-B64TFG
S-80843CLY-x
4.3 V±2.0 %
0.220 V
S-80844CLPF-B65TFG
S-80844CLY-x
4.4 V±2.0 %
4.45 V typ.
4.70 V max.*2
S-80844KLY-x*3

0.225 V
S-80845CLPF-B66TFG
S-80845CLY-x
4.5 V±2.0 %
0.230 V
S-80846CLPF-B67TFG
S-80846CLY-x
4.6 V±2.0 %
0.235 V
S-80847CLPF-B68TFG
S-80847CLY-x
4.7 V±2.0 %
0.240 V
S-80848CLPF-B69TFG
S-80848CLY-x
4.8 V±2.0 %
0.245 V
S-80849CLPF-B7ATFG
S-80849CLY-x
4.9 V±2.0 %
0.250 V
S-80850CLPF-B7BTFG
S-80850CLY-x
5.0 V±2.0 %
0.255 V
S-80851CLPF-B7CTFG
S-80851CLY-x
5.1 V±2.0 %
0.260 V
S-80852CLPF-B7DTFG
S-80852CLY-x
5.2 V±2.0 %
0.265 V
S-80853CLPF-B7ETFG
S-80853CLY-x
5.3 V±2.0 %
0.270 V
S-80854CLPF-B7FTFG
S-80854CLY-x
5.4 V±2.0 %
0.275 V
S-80855CLPF-B7GTFG
S-80855CLY-x
5.5 V±2.0 %
0.280 V
S-80856CLPF-B7HTFG
S-80856CLY-x
5.6 V±2.0 %
0.285 V
S-80857CLPF-B7ITFG
S-80857CLY-x
5.7 V±2.0 %
0.290 V
S-80858CLPF-B7JTFG
S-80858CLY-x
5.8 V±2.0 %
0.295
V
S-80859CLPF-B7KTFG
S-80859CLY-x
5.9 V±2.0 %
0.300 V
S-80860CLPF-B7LTFG
S-80860CLY-x
6.0 V±2.0 %
*1. x changes according to the packing form in TO-92. S: Bulk, F: Tape and reel, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 19 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
10
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Output Forms
1. Output Forms in S-808xxC Series
Table 5
Nch open-drain output products
(Active Low)
“N” is the last letter of the product name.
e.g. S-80815CN
S-808xxC Series
CMOS output products
(Active Low)
“L” is the last letter of the product name.
e.g. S-80815CL
2. Output form and their usage
Table 6
Usage
Nch open-drain output products CMOS output products
(Active Low)
(Active Low)
Different power supplies
Yes
No
Active Low reset for CPUs
Yes
Yes
Active High reset for CPUs
No
No
Detection voltage change by resistor divider
Yes
No
• Example for two power supplies
VDD1
VDD2
V/D
Nch
VSS
OUT
CPU
• Example for one power supply
VDD
VDD
V/D
CMOS OUT
CPU
VSS
V/D
Nch
OUT
CPU
VSS
Figure 3
Seiko Instruments Inc.
11
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Pin Configurations
Table 7
SC-82AB
Top view
4
3
1
Pin No.
Pin name
Pin description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
NC*1
No connection
4
VSS
GND pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
2
Figure 4
Table 8
SOT-23-5
Top view
5
1
Pin No.
Pin name
Pin description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
GND pin
4
NC*1
No connection
5
NC*1
No connection
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
4
2
3
Figure 5
Table 9
SOT-89-3
Top view
1
2
Pin No.
1
2
3
Pin name
OUT
VDD
VSS
Pin description
Voltage detection output pin
Voltage input pin
GND pin
3
Figure 6
Table10
SNT-4A
Top view
1
4
2
3
Pin No.
Pin name
Pin description
1
OUT
Voltage detection output pin
2
VSS
GND pin
3
NC*1
No connection
4
VDD
Voltage input pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 7
12
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
Table 11
TO-92
Bottom view
Pin No.
1
2
3
1 2 3
Pin name
OUT
VDD
VSS
Pin description
Voltage detection output pin
Voltage input pin
GND pin
Figure 8
„ Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products
Table 12
(Ta=25°C unless otherwise specified
Absolute maximum ratings Unit
7
V
Power supply voltage
Output voltage Nch open-drain output products
VSS−0.3 to VSS+7
CMOS output products
VSS−0.3 to VDD+0.3
Output current
IOUT
50
mA
Power dissipation
PD SC-82AB
150
mW
SNT-4A
140
Operating ambient temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
Item
Symbol
VDD−VSS
VOUT
2. Detection Voltage Typ. 1.5 V or More Products
Table 13
(Ta=25°C unless otherwise specified
Absolute maximum ratings Unit
12
V
Power supply voltage
Output voltage Nch open-drain output products
VSS−0.3 to VSS+12
CMOS output products
VSS−0.3 to VDD+0.3
Output current
IOUT
50
mA
Power dissipation
PD SC-82AB
150
mW
SOT-23-5
250
SOT-89-3
500
SNT-4A
140
TO-92
400
Operating ambient temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
Item
Symbol
VDD−VSS
VOUT
Seiko Instruments Inc.
13
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
Item
Symbol
Condition
Detection voltage*1
−VDET

Release voltage
+VDET
Hysteresis width
VHYS
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808 to 09
VDD=1.5 V
S-80810 to 14
VDD=2.0 V

Output transistor,
Nch, VDS=0.5 V, VDD=0.7 V
Output transistor,
Nch, VDS=5.0 V, VDD=5.0 V
Current consumption
ISS
Operating voltage
VDD
Output current
IOUT
Leakage current
ILEAK
Response time
tPLH

(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
0.802
0.834
0.867
0.910
0.944
0.979
1.017
1.054
1.091
1.125
1.164
1.203
1.232
1.273
1.315
1.340
1.383
1.427
1.448
1.493
1.538
0.018
0.034
0.051
0.028
0.044
0.061
0.037
0.054
0.071
0.047
0.064
0.081
0.056
0.073
0.091
0.066
0.083
0.101
0.076
0.093
0.110
1.3
3.5
2

µA
1.3
3.5

0.65
5.0
V
1

0.04
0.2

mA


60
nA


60
µs
3
1
Detection voltage
∆ − VDET
temperature
Ta=−40 °C to +85 °C
±100
±350 ppm/°C

∆Ta • − VDET
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta
∆Ta • − VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
14
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
Item
Symbol
Condition
Detection voltage*1
−VDET

Hysteresis width
VHYS

Current consumption
ISS
VDD=3.5 V
VDD=4.5 V
VDD=6.0 V
VDD=7.5 V
Operating voltage
VDD
Output current
IOUT

Output transistor, VDD=1.2 V
Nch, VDS=0.5 V S-80815 to 60
VDD=2.4 V
S-80827 to 60
Output transistor,
Nch, VDS=10.0 V, VDD=10.0 V

Leakage current
ILEAK
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
−VDET
−VDET
−VDET
×0.03
×0.05
×0.08
0.8
2.4
2

µA
0.8
2.4

0.9
2.7

0.9
2.7

0.95
10.0
V
1

0.59
1.36

2.88
4.98



100
mA
3
nA
Response time
tPLH
60
1


µs
Detection voltage
∆ − VDET
ppm/
temperature
Ta=−40 °C to +85 °C
±100
±350

°C
*2
∆
Ta
•
−
V
DET
coefficient
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta • − VDET
∆Ta
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
15
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16
Item
Symbol
Condition
Detection voltage*1
−VDET

Release voltage
+VDET
Hysteresis width
VHYS
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808 to 09
VDD=1.5 V
S-80810 to 14
VDD=2.0 V

Output transistor,
Nch, VDS=0.5 V, VDD=0.7 V
Output transistor,
Pch, VDS=2.1 V, VDD=4.5 V

Current consumption
ISS
Operating voltage
VDD
Output current
IOUT
(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
0.802
0.834
0.867
0.910
0.944
0.979
1.017
1.054
1.091
1.125
1.164
1.203
1.232
1.273
1.315
1.340
1.383
1.427
1.448
1.493
1.538
0.018
0.034
0.051
0.028
0.044
0.061
0.037
0.054
0.071
0.047
0.064
0.081
0.056
0.073
0.091
0.066
0.083
0.101
0.076
0.093
0.110
1.3
3.5
2

µA
1.3
3.5

0.65
5.0
V
1

0.04
0.2

2.9
5.8

mA
3
4
Response time
tPLH
60
1


µs
Detection voltage
∆ − VDET
temperature
Ta=−40 °C to +85 °C
±100
±350 ppm/°C

∆Ta • − VDET
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta • − VDET
∆Ta
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
16
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
2-2. Detection Voltage Typ.1.5 V or More Products
Table 17
Item
Symbol
Condition
Detection voltage*1
−VDET

Hysteresis width
VHYS

Current consumption
ISS
Operating voltage
Output current
VDD
IOUT
VDD=3.5 V
VDD=4.5 V
VDD=6.0 V
VDD=7.5 V
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60

Output transistor, VDD=1.2 V
Nch, VDS=0.5 V S-80815 to 60
VDD=2.4 V
S-80827 to 60
Output transistor, VDD=4.8 V
Pch, VDS=0.5 V S-80815 to 39
VDD=6.0 V
S-80840 to 56
VDD=8.4 V
S-80857 to 60

(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
−VDET
−VDET
−VDET
×0.03
×0.05
×0.08
0.8
2.4
2

µA
0.8
2.4

0.9
2.7

0.9
2.7

0.95
10.0
V
1

mA
3
0.59
1.36

2.88
4.98

1.43
2.39

1.68
2.78

2.08
3.42

4
Response time
tPLH
60
1


µs
Detection voltage
∆ − VDET
ppm/
temperature
Ta=−40 °C to +85 °C
±100
±350

°C
*2
Ta
V
DET
∆
•
−
coefficient
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta
∆Ta • − VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
17
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
„ Test Circuits
1.
VDD
VDD
*1
S-808xxC
V
R
100 kΩ
OUT
Series
V
VSS
*1. R is unnecessary for CMOS output products.
Figure 9
2.
A
VDD
VDD
S-808xxC
OUT
Series
VSS
Figure 10
3.
VDD
VDD
S-808xxC
V
OUT
A
Series
VSS
VDS
V
Figure 11
4.
VDS
VDD
VDD
S-808xxC
V
V
OUT
A
Series
VSS
Figure 12
18
Seiko Instruments Inc.
Rev.3.2_00
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
„ Timing Chart
1. Nch Open-drain Output Products
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Hysteresis width (VHYS)
Minimum operating voltage
VSS
OUT
VSS
VDD
R
100 kΩ
VDD
V
Output from the OUT pin
VSS
Figure 13
2. CMOS Output Products
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Hysteresis width (VHYS)
Minimum operating voltage
VSS
VDD
OUT
VSS
VDD
V
Output from the OUT pin
VSS
Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the
shaded region.
Figure 14
Seiko Instruments Inc.
19
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in
(RB + RC) • VDD
Figure 15 is OFF, the comparator input voltage is
.
RA + RB + RC
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 16), the Nch transistor
becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time
the Nch transistor N1 in Figure 15 becomes ON, the comparator input voltage is changed to
RB • VDD
.
RA + RB
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the
VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET.
1-5. When the VDD rises above +VDET (point B in Figure 16), the Nch transistor becomes OFF and the Pch
transistor becomes ON to provide VDD level at the output.
VDD
*1
RA
*1
−
Pch
+
*1
RB
Nch
VREF
VSS
RC
N1
*1. Parasiteic diode
Figure 15 Operation 1
20
OUT
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
(1)
(2) (3)
(4)
B
A
Hysteresis width (VHYS)
(5)
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Minimum operating voltage
VSS
VDD
Output from the OUT pin
VSS
Figure 16 Operation 2
2. Other Characteristics
2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 17 shows the temperature characteristics of the detection voltage.
−VDET [V]
+0.945 mV/°C
−VDET25
*1
−0.945 mV/°C
−40
25
85
Ta [°C]
*1. −VDET25 is an actual detection voltage value at 25°C.
Figure 17 Temperature Characteristics of Detection Voltage (Example for S-80827C)
2-2. Temperature Characteristics of Release Voltage
The temperature coefficient
∆ + VDET
for the release voltage is calculated by the temperature coefficient
∆Ta
∆ − VDET
of the detection voltage as follows:
∆Ta
∆ + VDET + VDET ∆ − VDET
×
=
∆Ta
− VDET
∆Ta
The temperature coefficients for the release voltage and the detection voltage have the same sign
consequently.
Seiko Instruments Inc.
21
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2-3. Temperature Characteristics of Hysteresis Voltage
The temperature characteristics for the hysteresis voltage is expressed as
∆ + VDET ∆ − VDET
−
and is
∆Ta
∆Ta
calculated as follows:
∆ + VDET ∆ − VDET
VHYS ∆ − VDET
−
=
×
∆Ta
∆Ta
− VDET
∆Ta
„ Standard Circuit
1
R*
100 kΩ
VDD
OUT
VSS
*1. R is unnecessary for CMOS output products.
Figure 18
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
„ Technical Terms
1. Detection Voltage (−VDET), Release Voltage (+VDET)
The detection voltage (−VDET) is a voltage at which the output turns to low. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 19).
Example: For the S-80815CN, the detection voltage lies in the range of 1.470≤(−VDET)≤1.530.
This means that some S-80815CNs have 1.470 V for −VDET and some have 1.530 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified
minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure
20). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by
−VDET×1.03≤+VDET≤−VDET ×1.08.
Example: For the S-80815CN, the release voltage lies in the range of 1.514≤(+VDET)≤1.652.
This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V.
22
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
VDD
Detection voltage
(−VDET) Max.
Detection voltage range
(−VDET) Min.
VDD
Release voltage
(+VDET) Max.
Release voltage range
(+VDET) Min.
OUT
OUT
Figure 19 Detection Voltage (CMOS Output Products)
Figure 20 Release Voltage (CMOS Output Products)
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
+VDET is always larger than −VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B −The voltage at point A =VHYS in Figure 16). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release
of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 13), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high
(release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When
the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes
from low to high. A through-type current is again generated, a voltage drop appears, and repeating the
process finally induces oscillation.
VDD
RA
VIN
S-808xxCL
OUT
RB
VSS
Figure 21 An Example for Bad Implementation of Input Voltage Divider
Seiko Instruments Inc.
23
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Electrical Characteristics for Customized Products
1. S-80824KNUA-D2B-T2, S-80824KNY-x
Table 18
Item
Symbol
*1
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
−VDET
+VDET
ISS
VDD
IOUT
Leakage current
ILEAK
(Ta=25°C unless otherwise specified)
Test
Condition
Min.
Typ.
Max.
Unit
circuit
V
1
2.295 2.400*2 2.505

4.300
4.400
4.500

0.8
2.4
2
VDD=6.0 V

µA
0.95
10.0
V
1


Output transistor, VDD=0.95 V 0.03
0.24
mA
3

Nch, VDS=0.5 V
0.50
VDD=1.2 V 0.23

Output transistor,
0.1


µA
Nch, VDD=10.0 V, VDS=10.0 V
60
1



µs
Response time
tPLH
Detection voltage
∆ − VDET
temperature
Ta=−40°C to 85°C
±100
±350 ppm/°C

*3
∆
Ta
• − VDET
coefficient
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta
∆Ta • − VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
24
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2. S-80844KLUA-D2A-T2, S-80844KLY-x
Table 19
Item
*1
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
Symbol
Condition
−VDET
+VDET
ISS
VDD
IOUT


VDD=6.0 V

Output transistor, VDD=1.2 V
Nch, VDS=0.5 V VDD=2.4 V
Output transistor,
VDD=4.8 V
Pch, VDS=0.5 V

(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
4.295 4.450*2 4.605
V
1
4.700


1.0
3.0
2

µA
0.95
10.0
V
1

0.23
0.50
mA
3

1.60
3.70

0.36
0.62

4
Response time
tPLH
60
1


µs
Detection voltage
∆ − VDET
temperature
Ta=−40°C to 85°C
±100
±350 ppm/°C

*3
∆
Ta
• − VDET
coefficient
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta
∆Ta • − VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
25
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
3. S-80846KNUA-D2C-T2, S-80846KNY-x
Table 20
Item
Symbol
Condition
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
−VDET
VHYS
ISS
VDD
IOUT
Leakage current
ILEAK


VDD=6.0 V

Output transistor, VDD=1.2 V
Nch, VDS=0.5 V VDD=2.4 V
Output transistor,
Nch, VDD=10.0 V, VDS=10.0 V

*1
(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
*2
4.500 4.600
4.700
V
1
0.05
0.10

0.9
2.7
2

µA
0.95
10.0
V
1

0.59
1.36
mA
3

2.88
4.98



0.1
µA
Response time
tPLH
60
1


µs
Detection voltage
∆ − VDET
temperature
Ta=−40°C to 85°C
±100
±350 ppm/°C

*3
∆
Ta
• − VDET
coefficient
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000
∆Ta
∆Ta • − VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
„ Precautions
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
power supply voltage (VDD) is slow near the detection voltage.
• When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
products including this IC upon patents owned by a third party.
26
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
„ Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80808CL
S-80814CL
0.90
1.55
+VDET
1.50
+VDET
1.45
VDET (V)
VDET (V)
0.85
1.40
-VDET
1.35
0.80
-VDET
1.30
1.25
0.75
-40
-20
0
20
Ta (°C)
40
60
-40
80
S-80815CL
-20
0
20
40
60
80
20
40
60
80
20
40
60
80
40
60
80
Ta (°C)
S-80860CL
1.60
6.40
6.30
+VDET
VDET (V)
VDET (V)
1.55
1.50
-VDET
+VDET
6.20
6.10
6.00
-VDET
5.90
5.80
1.45
-40
-20
0
20
Ta (°C)
40
60
-40
80
-20
0
-20
0
Ta (°C)
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80814CL
8.0
7.0
7.0
6.0
6.0
VHYS (%)
V HYS (%)
S-80808CL
8.0
5.0
4.0
3.0
-40
5.0
4.0
3.0
-20
0
20
40
Ta (°C)
60
80
-40
Ta (°C)
S-80815CL
8.0
S-80860CL
8.0
7.0
6.0
VHYS (%)
V HYS (%)
7.0
5.0
4.0
3.0
-40
6.0
5.0
4.0
3.0
-20
0
20
40
Ta (°C)
60
80
-40
Seiko Instruments Inc.
-20
0
20
Ta (°C)
27
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
3. Current Consumption (ISS) - Input Voltage (VDD)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta=25°C
S-80814CL
9.3 µA
ISS (µA)
ISS (µA)
S-80808CL
0
1.0
2.0
3.0
4.0
5.0
Ta=25°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
21.5 µA
6.0
0
1.0
2.0
VDD (V)
Ta=25°C
4.7 µA
0
2.0
4.0
6.0
8.0
10.0
S-80808CL
VDD=1.5 V
2.0
2.0
4.0
6.0
VDD (V)
8.0
S-80814CL
10.0
12.0
VDD=2.0 V
2.0
1.5
ISS (µA)
1.5
ISS (µA)
6.0
12.8 µA
0
12.0
4. Current Consumption (ISS) - Temperature (Ta)
1.0
0.5
0.0
1.0
0.5
0.0
-40
-20
0
20
40
60
80
-40
Ta (°C)
S-80815CL
VDD=3.5 V
2.0
-20
0
20
Ta (°C)
40
S-80860CL
60
80
VDD=7.5 V
2.0
1.5
1.5
ISS (µA)
ISS (µA)
5.0
Ta=25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VDD (V)
1.0
0.5
0.0
-40
-20
0
20
40
60
80
1.0
0.5
0.0
Ta (°C)
28
4.0
S-80860CL
ISS (µA)
ISS (µA)
S-80815CL
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
VDD (V)
Seiko Instruments Inc.
-40
-20
0
20
Ta (°C)
40
60
80
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
5. Nch Transistor Output Current (IOUT) – VDS
S-80814CL/CN
5.0
Ta=25°C
VDD=1.3 V
4.0
3.0
VDD=1.0
2.0
1.0
Ta=25°C
6.0 V
40
IOUT (mA)
IOUT (mA)
S-80860CL/CN
50
VDD=0.7 V
0
4.8 V
30
3.6 V
20
2.4 V
10
VDD=1.2 V
0
0
0.5
1.0
1.5
VDS (V)
2.0
2.5
0
1.0
2.0
3.0
VDS (V)
4.0
5.0
6. Pch Transistor Output Current (IOUT) -VDS
Ta=25ºC
4.0
VDD=2.9V
3.0
VDD=2.4V
2.0
VDD=1.9 V
1.0
0
0.5
Ta=25ºC
25
VDD=1.4 V
VDD=0.9 V
0
S-80815CL
30
IOUT (mA)
IOUT (mA)
S-80808CL
5.0
8.4 V
20
7.2 V
6.0 V
15
4.8 V
3.6 V
10
5
VDD=2.4 V
0
1.0
1.5
VDS (V)
2.0
0
2.5
2.0
4.0
6.0
VDS (V)
8.0
10.0
7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80814CL/CN
VDS=0.5 V
6.0
S-80860CL/CN
20
VDS=0.5 V
Ta=-40°C
Ta=-40°C
15
Ta=25°C
IOUT (mA)
IOUT (mA)
4.5
3.0
1.5
Ta=85°
0
0
0.5
1.0
VDD (V)
1.5
Ta=25°C
10
5
Ta=85°C
0
2.0
0
2.0
4.0
VDD (V)
6.0
8.0
8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80808CL
VDS=0.5 V
3.0
IOUT (mA)
IOUT (mA)
Ta=25°C
1.0
Ta=85°C
1.0
2.0
3.0
4.0
4
Ta=25°C
3
2
Ta=85°C
1
0
0
Ta=-40°C
5
1.5
0.5
VDS=0.5 V
6
Ta=-40°C
2.5
2.0
S-80815CL
5.0
6.0
0
VDD (V)
0
2.0
4.0
6.0
8.0
10.0
12.0
VDD (V)
Seiko Instruments Inc.
29
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
9. Minimum Operating Voltage - Input Voltage (VDD)
S-80808CN
Pull-up to VDD 100 kΩ
S-80808CN
1.2
4.0
0.9
3.0
VOUT (V)
VOUT (V)
Ta=-40°C
0.6
Ta=25°C
0.3
Ta=85°C
0.0
0.0
0.2
0.4
0.8
0.6
Ta=25°C
Ta=85°C
1.0
0.0
1.0
Pull-up to VDD 100 kΩ
0.2
4.0
1.5
3.0
VOUT (V)
VOUT (V)
Ta=-40°C
Ta=25°C
0.5
Ta=85°C
0.0
0
0.5
1.0
VDD (V)
S-80808CN
1.5
2.0
Pull-up to VDD:100 kΩ
0.65
0.60
Ta=-40°C
0.4
0.6
0.8
VDD (V)
S-80815CN
2.0
1.0
Ta=-40°C
2.0
VDD (V)
S-80815CN
Pull-up to 3 V
1.0
Pull-up to 3 V
Ta=-40°C
Ta=25°C
2.0
Ta=85°C
1.0
0.0
0
0.5
1.0
VDD (V)
1.5
2.0
VOUT(V)
PULL-UP
VDDmin (V)
0.55
0.50
PULL-UP×0.1
0.45
0.40
Ta=25°C
0.35
0
Ta=85°C
VDDmin
0.30
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PULL-UP (V)
S-80815CN
0.75
0.70
Remark VDDmin. is defined by the VDD voltage at which
VOUT goes below 10 % of PULL-UP
voltage when the VDD increase from 0 V.
Pull-up to VDD:100 kΩ
Ta=-40°C
VDDmin (V)
0.65
0.60
0.55
0.50
0.45
Ta=85°C
Ta=25°C
0.40
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
PULL-UP (V)
30
VDD(V)
Seiko Instruments Inc.
Figure 22
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
10. Dynamic Response - COUT
S-80808CL
Response time (ms)
tpHL
0.1
0.01
tpLH
0.001
0.00001
0.0001
0.001
S-80808CN
0.01
0.1
0.01
tpLH
0.0001
0.001
0.01
0.01
tpLH
0.001
0.01
Respone time (ms)
Response time (ms)
tpLH
0.01
Load Capacitance (µF)
tpHL
0.01
0.0001
0.001
0.01
0.1
Ta=25°C
tpLH
10
1
0.1
tpHL
0.01
0.0001
0.001
0.01
0.1
Ta=25°C
100
0.01
0.001
0.1
S-80860CN
0.1
0.0001
tpLH
Load Capacitance (µF)
tpHL
0.001
0.00001
Ta=25°C
1
0.001
0.00001
0.1
Ta=25°C
1
0.1
100
Load Capacitance (µF)
S-80860CL
0.01
S-80815CN
Response time (ms)
Response time (ms)
0.1
0.0001
0.001
Load Capacitance (µF)
tpHL
0.001
0.00001
0.0001
10
0.001
0.00001
0.1
Ta=25°C
1
tpHL
0.01
100
Load capacitanse (µF)
S-80815CL
0.1
S-80814CN
Response time (ms)
Response time (ms)
tpHL
0.001
0.00001
1
Load capacitance (µF)
Ta=25°C
1
tpLH
10
0.001
0.00001
0.1
Load capacitance (µF)
S-80814CL
Ta=25°C
100
Resopnse time (ms)
Ta=25°C
1
0.1
tpLH
10
1
0.1
tpHL
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
Load Capacitance (µF)
Seiko Instruments Inc.
31
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
1 µs
1 µs
VIH
VDD
Input voltagae
V
VIL
tpHL
Rev.3.2_00
VDD
S-808xxC OUT
Series
COUT
VSS
tpLH
VDD
VDD×90 %
Output voltage
*1
R
100 kΩ
V
*1. R is unnecessary for CMOS output products.
VDD×10 %
VIH=10 V, VIL=0.95 V
Figure 23 Measurement Condition for Response Time
Figure 24 Measurement Circuit for Response Time
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
„ Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may
be performed or the contents of the memory register may be lost. When power supply voltage returns to
normal, the microcomputer needs to be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
Reset circuits shown in Figures 25 to 26 can be easily constructed with the help of the S-808xxC series,
that has low operating voltage, a high-precision detection voltage and hysteresis.
VDD1
VDD2
VDD
S808xxCL
S808xxCN
Microcomputer
Microcomputer
VSS
VSS
(Only for Nch open-drain products)
Figure 25 Reset Circuit Example(S-808xxCL)
Figure 26 Reset Circuit Example (S-808xxCN)
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
32
Seiko Instruments Inc.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2. Power-on Reset Circuit
A power-on reset circuit can be constructed using Nch open-drain output product of S-808××C Series.
VDD
*2
Di
*1
R
VIN
(R≤75 kΩ)
S808xxCN
OUT
( Nch open-drain products)
C
VSS
*1. Resistor R should be 75 kΩ or less to prevent oscillation.
*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling,Di can be
removed when the delay of the falling time is not important.
Figure 27
VDD
(V)
OUT
(V)
t (s)
t (s)
Figure 28
Remark When the power rises sharply as shown in the Figure 29 left, the output may goes to the high level
for an instant in the undefined region where the output voltage is undefined since the power
voltage is less than the minimum operation voltage.
VDD
(V)
OUT
(V)
t (s)
t (s)
Figure 29
Seiko Instruments Inc.
33
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
3. Change of Detection Voltage
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 30 to 31. In Figure 30, hysteresis width also changes.
VDD
VDD
RA
Vf1
*1
(RA≤75 kΩ)
RB
S808xxCN
VIN
Vf2
OUT
VIN
S808xxCN
+
−
OUT
(Nch open-drain
output product)
(Nch open-drain
output products)
VSS
VSS
RA + RB
• − VDET
RB
RA + RB
Hysterisis width =
• VHYS
RB
Detection voltagae =
Detection voltage=Vf1+Vf2+(−VDET)
*1. RA should be 75 kΩ or less to prevent oscillation.
Caution If RA and RB are large, the hysteresis
width may aloso be larger than the value
given by the above equation due to the
through-type current (which flows
slightly in an Nch open-drain product).
Figure 30
Figure 31
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
34
Seiko Instruments Inc.
2.0±0.2
1.3±0.2
4
3
0.05
0.3
+0.1
-0.05
0.16
2
1
0.4
+0.1
-0.06
+0.1
-0.05
No. NP004-A-P-SD-1.1
TITLE
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
1.5
+0.1
-0.05
4.0±0.1
2.0±0.05
1.1±0.1
4.0±0.1
0.2±0.05
1.05±0.1
(0.7)
2.2±0.2
Feed direction
No. NP004-A-C-SD-2.1
TITLE
SC82AB-A-Carrier Tape
No.
NP004-A-C-SD-2.1
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. NP004-A-R-SD-1.1
TITLE
SC82AB-A-Reel
No.
NP004-A-R-SD-1.1
QTY.
SCALE
UNIT
mm
Seiko Instruments Inc.
3,000
2.9±0.2
1.9±0.2
4
5
1
2
+0.1
0.16 -0.06
3
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
No.
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
2.0±0.05
+0.2
ø1.0 -0
0.25±0.1
4.0±0.1
1.4±0.2
3.2±0.2
3 2 1
4
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
No.
MP005-A-C-SD-2.1
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
SOT235-A-Reel
TITLE
No.
MP005-A-R-SD-1.1
SCALE
QTY.
UNIT
mm
Seiko Instruments Inc.
3,000
4.5±0.1
1.5±0.1
1.6±0.2
1
2
3
1.5±0.1 1.5±0.1
0.4±0.05
45°
0.4±0.1
0.4±0.1
0.45±0.1
No. UP003-A-P-SD-1.1
TITLE
SOT893-A-PKG Dimensions
No.
UP003-A-P-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1(10 pitches : 40.0±0.2)
2.0±0.05
ø1.5 +0.1
-0
5° max.
0.3±0.05
8.0±0.1
2.0±0.1
4.75±0.1
Feed direction
No. UP003-A-C-SD-1.1
TITLE
SOT893-A-Carrier Tape
No.
UP003-A-C-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
16.5max.
13.0±0.3
Enlarged drawing in the central part
(60°)
(60°)
No. UP003-A-R-SD-1.1
SOT893-A-Reel
TITLE
No.
UP003-A-R-SD-1.1
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
1,000
1.2±0.04
+0.05
0.08 -0.02
0.65
0.48±0.02
0.2±0.05
No. PF004-A-P-SD-3.0
TITLE
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-3.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
5°
1.45±0.1
ø0.5 -0
4.0±0.1
0.65±0.05
TF type
2
1
3
4
Feed direction
No. PF004-A-C-SD-1.0
TITLE
SNT-4A-A-Carrier Tape
PF004-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PF004-A-R-SD-1.0
SNT-4A-A-Reel
TITLE
PF004-A-R-SD-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
5.2max.
4.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
1.27
No. YS003-B-P-SD-1.1
TITLE
No.
TO92-B-PKG Dimensions
YS003-B-P-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
4.2max.
5.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
+0.4
2.5 -0.1
1.27
No. YF003-A-P-SD-1.1
TITLE
TO92-A-PKG Dimensions
YF003-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.7±1.0
1.0max.
0.5max.
1.0max.
Marked side
1#pin
3#pin
1.45max.
0.7±0.2
6.35±0.4
ø4.0±0.2
12.7±0.3(20 pitches : 254.0±1.0)
Feed direction
Marked side
Feed direction
No. YF003-A-C-SD-4.1
TITLE
No.
TO92-A-Radial Tape
YF003-A-C-SD-4.1
SCALE
UNIT
mm
Seiko Instruments Inc.
2±0.5
5±0.5
43±0.5
ø358±2
53±0.5
No. YF003-A-R-SD-2.1
TO92-A-Reel
TITLE
No.
YF003-A-R-SD-2.1
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
2,000
4.2max.
5.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
+0.4
2.5 -0.1
1.27
No. YF003-A-P-SD-1.1
TITLE
TO92-A-PKG Dimensions
YF003-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.7±1.0
1.0max.
0.5max.
1.0max.
Marked side
1#pin
3#pin
1.45max.
0.7±0.2
6.35±0.4
ø4.0±0.2
12.7±0.3(20 pitches : 254.0±1.0)
Feed direction
No. YZ003-C-C-SD-3.1
TITLE
TO92-C-Radial Tape
No.
YZ003-C-C-SD-3.1
SCALE
UNIT
mm
Seiko Instruments Inc.
Spacer
60
320
40
Side spacer placed in front side
165
320
Space more than 4 strokes
262
330
47
No. YZ003-C-Z-SD-2.1
TO92-C-Ammo Packing
TITLE
YZ003-C-Z-SD-2.1
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
2,500
•
•
•
•
•
•
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.