SPANSION S29NS128N0SBJW002

S29NS-N MirrorBit™ Flash Family
S29NS256N, S29NS128N, S29NS064N
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only
Simultaneous Read/Write, Multiplexed, Burst Mode
Flash Memory
S29NS-N MirrorBit™ Flash Family Cover Sheet
Data Sheet (Advance Information)
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S29NS-N_00
Revision A
Amendment 12
Issue Date June 13, 2006
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
LLC therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion LLC.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion LLC reserves the right to change or discontinue work on this
proposed product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion LLC applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion LLC deems the products to have been in sufficient production volume
such that subsequent versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu sales office.
ii
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
S29NS256N, S29NS128N, S29NS064N
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only
Simultaneous Read/Write, Multiplexed, Burst Mode
Flash Memory
Data Sheet (Advance Information)
Distinctive Characteristics
„ Single 1.8V read, program and erase (1.70V to 1.95V)
– Typical sector erase time of 150 ms for 16 Kword sectors and
800 ms sector erase time for 64 Kword sectors
„ VersatileIO™ Feature
– Device generates data output voltages and tolerates data input
voltages as determined by the voltage on the VCCQ pin
– 1.8V compatible I/O signals
„ Multiplexed Data and Address for reduced I/O count
– A15–A0 multiplexed as DQ15–DQ0
– Addresses are latched by AVD# control input when CE# low
„ Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing
erase/program functions in other bank
– Zero latency between read and write operations
„ Read access times at 80/66 MHz
– Burst access times of 9/11 ns at industrial temperature range
– Asynchronous random access times of 80 ns
– Synchronous random access times of 80 ns
„ Burst length
– A command sector protection method to lock combinations of
individual sectors to prevent program or erase operations within that
sector
– Sectors can be locked and unlocked in-system at VCC level
„ Password Sector Protection
– A sophisticated sector protection method to lock combinations of
individual sectors to prevent program or erase operations within that
sector using a user-defined 64-bit password
„ Hardware Sector Protection
– WP# protects the two highest sectors
– All sectors locked when ACC = VIL
„ Handshaking feature
„ Supports Common Flash Memory Interface (CFI)
„ Software command set compatible with JEDEC 42.4
standards
„ Secured Silicon Sector region
– 256 words accessible through a command sequence
– 128 words for the Factory Secured Silicon Sector
– 128 words for the Customer Secured Silicon Sector
– Backwards compatible with Am29F and Am29LV families
„ Manufactured on 110 nm MirrorBitTM process technology
„ Cycling endurance: 100,000 cycles per sector typical
„ Power dissipation (typical values: 8 bits switching,
CL = 30 pF) @ 80 MHz
„ Data retention: 20 years typical
„ Data# Polling and toggle bits
Continuous Burst Mode Read: 28 mA (at 66MHz)
Simultaneous Operation: 50 mA
Program/Erase: 19 mA
Standby mode: 20 µA
– Provides a software method of detecting program and erase
operation completion
„ Erase Suspend/Resume
„ Sector Architecture
– Four 16 K word sectors (S29NS256N and S29NS128N) and four 8K
word sectors (S29NS064N) in upper-most address range
– Two-hundred-fifty-five 64-Kword sectors (S29NS256N), onehundred-twenty-seven 64-Kword sectors (S29NS128N) and one
hundred twenty-seven 32Kword sectors (S29NS064N)
– Sixteen banks (S29NS128N and S29NS256N) and eight banks
(S29NS064N)
„ High Performance
– Typical word programming time of 40 µs
– Typical effective word programming time of 9.4 µs utilizing a
32-Word Write Buffer at VCC Level
– Typical effective word programming time of 6 µs utilizing a 32-Word
Write Buffer at ACC Level
Publication Number S29NS-N_00
„ Persistent Sector Protection
– Provides host system with minimum possible latency by monitoring
RDY
– Continuous linear burst
– 8/16/32 word linear burst with wrap around
– 8/16/32 word linear burst without wrap around
–
–
–
–
Security features
Revision A
– Suspends an erase operation to read data from, or program data to,
a sector that is not being erased, then resumes the erase operation
„ Program Suspend/Resume
– Suspends a programming operation to read data from a sector other
than the one being programmed, then resume the programming
operation
„ Unlock Bypass Program command
– Reduces overall programming time when issuing multiple program
command sequences
„ Packages
– 48-ball Very Thin FBGA (S29NS256N)
– 44-ball Very Thin FBGA (S29NS128N, S29NS064N)
Amendment 12
Issue Date June 13, 2006
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
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General Description
The S29NS256N, S29NS128N and S29NS064N are 256 Mb, 128 Mb and 64Mb (respectively), 1.8 Volt-only,
Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 16,777,216, 8,388,608, and
4,194,304 words of 16 bits each. These devices use a single VCC of 1.70 to 1.95 V to read, program, and
erase the memory array. A 9.0-volt ACC, may be used for faster program performance if desired. These
devices can also be programmed in standard EPROM programmers.
The devices are offered at the following speeds:
Clock Speed
Burst Access (ns)
Synch. Initial Access (ns)
Asynch. Initial Access (ns)
80 MHz
9
80
80
66 MHz
11.0
80
80
Output Loading
30 pF
The devices operate within the temperature range of –25°C to
+85°C, and are offered in Very Thin FBGA packages.
1.1
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into sixteen banks. The device allows a host system to program or erase in one bank, then immediately and
simultaneously read from another bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations. The devices are structured as shown in the following tables:
S29NS256N
Bank 0-14 Sectors
Quantity
Bank 15 Sectors
Size
240
Quantity
Size
4
16 Kwords
64 Kwords
15
240 Mb total
64 Kwords
16 Mb total
S29NS128N
Bank 0-14 Sectors
Quantity
Bank 15 Sectors
Size
120
Quantity
Size
4
16 Kwords
7
64 Kwords
64 Kwords
120 Mb total
8 Mb total
S29NS064N
Bank 0-6 Sectors
Quantity
Bank 7 Sectors
Size
112
Quantity
Size
4
8 Kwords
32 Kwords
15
56 Mbits
32 Kwords
8 Mbits
The VersatileIO™ (VIO) control allows the host system to set the voltage levels that the device generates at
its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the
VCCQ pin.
The devices use Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to
control asynchronous read and write operations. For burst operations, the devices additionally require Ready
(RDY) and Clock (CLK). This implementation allows easy interface with minimal glue logic to
microprocessors/microcontrollers for high performance read operations.
The devices offer complete compatibility with the JEDEC 42.4 single-power-supply Flash command set
standard. Commands are written to the command register using standard microprocessor write timings.
Reading data out of the device are similar to reading from other Flash or EPROM devices.
2
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
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The host system can detect whether a program or erase operation is complete by using the device status bit
DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the
device automatically returns to reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The devices are fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The devices also offer three types of data protection at the sector level. Persistent
Sector Protection provides in-system, command-enabled protection of any combination of sectors using a
single power supply at VCC. Password Sector Protection prevents unauthorized write and erase operations
in any combination of sectors through a user-defined 64-bit password. When at VIL, WP# locks the highest
two sectors. Finally, when ACC is at VIL, all sectors are locked.
The devices offer two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both modes.
Device programming occurs by executing the program command sequence. This initiates the Embedded
Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster program times by requiring only two write
cycles to program data instead of four. Additionally, Write Buffer Programming is available on this family of
devices. This feature provides superior programming performance by grouping locations being programmed.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically preprograms the array (if it is not already fully
programmed) before executing the erase operation. During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The Program Suspend/Program Resume feature enables the user to put program on hold to read data from
any sector that is not selected for programming. If a read is needed from the Persistent Protection area,
Dynamic Protection area, or the CFI area, after an program suspend, then the user must use the proper
command sequence to enter and exit this region. The program suspend/resume functionality is also available
when programming in erase suspend (1 level depth only).
The Erase Suspend/Erase Resume feature enables the user to put erase on hold to read data from, or
program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If
a read is needed from the Persistent Protection area, Dynamic Protection area, or the CFI area, after an
erase suspend, then the user must use the proper command sequence to enter and exit this region.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory
device.
The host system can detect whether a memory array program or erase operation is complete by using the
device status bit DQ7 (Data# Polling), DQ6/DQ2 (toggle bits), DQ5 (exceeded timing limit), DQ3 (sector erase
start timeout state indicator), and DQ1 (write to buffer abort). After a program or erase cycle has been
completed, the device automatically returns to reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The device also offers two types of data protection at the sector level. When at VIL,
WP# locks the two outermost boot sectors at the top of memory.
When the ACC pin = VIL, the entire flash memory array is protected.
Spansion LLC Flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector. The data is programmed using hot electron injection.
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
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Table Of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
Simultaneous Read/Write Operations with Zero Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4
2.
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.
Block Diagram of Simultaneous Operation Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1
S29NS256N – 48-Ball Very Thin FBGA Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2
S29NS128N – 48-Ball Very Thin FBGA Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 10
5.3
S29NS064N – 44-Ball Very Thin FBGA Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 11
5.4
Special Package Handling Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7.
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.1
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
8.
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.1
VersatileIO™ (VIO) Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.2
Requirements for Asynchronous Read Operation (Non-Burst) . . . . . . . . . . . . . . . . . . . . . . .
8.3
Requirements for Synchronous (Burst) Read Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.4
Programmable Wait State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5
Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.6
Handshaking Feature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.7
Simultaneous Read/Write Operations with Zero Latency . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.8
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.9
Accelerated Program and Erase Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.10 Write Buffer Programming Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.11 Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.12 Advanced Sector Protection and Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.13 Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.14 Persistent Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.15 Persistent Sector Protection Mode Lock Bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.16 Password Sector Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.17 64-bit Password . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.18 Password Mode Lock Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.19 Persistent Protection Bit Lock (PPB Lock Bit) in Password Sector Protection Mode . . . . . .
8.20 Hardware Data Protection Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.21 WP# Boot Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.22 Low VCC Write Inhibit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.23 Write Pulse “Glitch” Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.24 Logical Inhibit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.25 Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.26 Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.27 Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.28 RESET#: Hardware Reset Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.29 Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.30 Secured Silicon Sector SectorFlash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.
Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
10.
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Set Configuration Register Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 Read Configuration Register Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S29NS-N MirrorBit™ Flash Family
14
14
14
15
17
17
17
18
18
18
18
19
20
20
21
22
22
23
23
23
24
24
24
24
24
25
25
25
25
26
26
36
36
37
37
S29NS-N_00_A12 June 13, 2006
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11.
Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.1 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.3 Enter/Exit Secured Silicon Sector Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.4 Program Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.5 Accelerated Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.6 Write Buffer Programming Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.7 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.8 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.9 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.10 Program Suspend/Program Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.11 Lock Register Command Set Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.12 Password Protection Command Set Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.13 Non-Volatile Sector Protection Command Set Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.14 Global Volatile Sector Protection Freeze Command Set . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.15 Volatile Sector Protection Command Set. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
39
39
40
40
41
41
43
44
45
46
47
47
48
49
51
51
12.
Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.1 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.2 RDY: Ready . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.3 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.4 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.6 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.7 DQ3: Sector Erase Start Timeout State Indicator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.8 DQ1: Write to Buffer Abort . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55
55
57
57
57
59
59
59
60
13.
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
14.
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
15.
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
15.1 CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
16.
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
17.
Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
18.
Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
19.
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.1 VCC Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.2 Synchronous/Burst Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.3 Asynchronous Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.4 Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.5 Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20.
Erase and Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
21.
BGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
22.
Physical Dimensions (S29NS256N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
22.1 VDC048—48-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 11 x 10 mm Package. . . . . 77
23.
Physical Dimensions (S29NS128N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
23.1 VDD044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 9.2 x 8 mm Package . . . . . 78
23.2 VDE044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 7.7 x 6.2mm Package . . . . 79
24.
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.1 Revision A (April 16, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.2 Revision A1 (June 28, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.3 Revision A2 (September 9, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.4 Revision A3 (November 16, 2004). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.5 Revision A3a (April 5, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.6 Revision A4 (April 12, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.7 Revision A5 (August 15, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.8 Revision A6 (August 24, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
64
64
65
67
68
69
80
80
80
80
81
81
82
82
82
5
Da ta
24.9
24.10
24.11
24.12
24.13
24.14
6
Sheet
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Revision A7 (September 16, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision A8 (September 23, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision A9 (November 15, 2005). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision A10 (March 23, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision A11 (April 20, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision A12 (June 13, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S29NS-N MirrorBit™ Flash Family
83
83
83
83
83
83
S29NS-N_00_A12 June 13, 2006
Data
2.
She et
(Adva nce
In for ma ti on)
Product Selector Guide
Description
S29NS256N, S29NS128N, S29NS064N
Burst Frequency
80 MHz
66 MHz
Max Initial Synchronous Access Time, ns (TIACC)
80
80
Max Burst Access Time, ns (TBACC)
9
11.0
80
80
9
11.0
Max Asynchronous Access Time, ns (TACC)
Max CE# Access Time, ns (TCE)
Max OE# Access Time, ns (TOE)
3. Block Diagram
VCCQ
VCC
VSS
A/DQ15–A/DQ0
RDY
Buffer
RDY
Erase Voltage
Generator
Input/Output
Buffers
WE#
RESET#
State
Control
ACC
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC
Detector
AVD#
CLK
Burst
State
Control
Timer
Burst
Address
Counter
Address Latch
WP#
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
Amax–A0
A/DQ15–A/DQ0
Amax–A16
Note
Amax indicates the highest order address bit. Amax equals A23 for NS256N, and A22 for NS128N and A21 for S29NS064N.
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
7
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Sheet
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Bank Address
Y-Decoder
VCCQ
VCC
VSS
Vssq
Bank 0
Latches and
Control Logic
4. Block Diagram of Simultaneous Operation Circuit
DQ15–DQ0
Amax–A0
X-Decoder
OE#
ACC (Note 4)
CE#
AVD#
CLK
X-Decoder
Amax–A0
OE#
STATE
CONTROL
&
COMMAND
REGISTER
RDY
Control
WP#
DQ15–DQ0
DQ15–
DQ0
Status
Amax–A0
Bank Address
Amax–A0
Y-Decoder
X-Decoder
Amax–A0
Bank n-1
Bank Address
Y-Decoder
X-Decoder
Bank n
OE#
Latches and
Control Logic
WE#
DQ15–DQ0
DQ15–DQ0
OE#
Latches and
Control Logic
RESET#
Bank 1
Latches and
Control Logic
Y-Decoder
Bank Address
DQ15–DQ0
Notes
1. A15–A0 are multiplexed with DQ15–DQ0.
2. Amax indicates the highest order address bit. A23 (NS256N), A22 (NS128N), and A21 (NS064N).
3. n = 15 for NS256N and NS128N, n = 7 for NS064N.
8
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
5.
5.1
She et
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Connection Diagram
S29NS256N – 48-Ball Very Thin FBGA Connection Diagram
S29NS256N
48-Ball Very Thin FBGA
Top View, Balls Facing Down
NC
NC
NC
NC
A1
A2
A3
A4
A5
RDY
A21
VSS
CLK
VCC
B1
B2
B3
B4
B5
VCCQ
A16
C1
C2
A6
A7
WE# ACC
B6
B7
A20 AVD# A23 RESET# WP#
C3
C4
C5
C6
C7
A8
A9
A19
A17
A22
B8
B9
B10
A18
C8
A10
CE# VSSQ
C9
C10
VSS A/DQ7 A/DQ6A/DQ13A/DQ12A/DQ3 A/DQ2 A/DQ9 A/DQ8 OE#
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
A/DQ15A/DQ14 VSSQ A/DQ5 A/DQ4A/DQ11A/DQ10 VCCQ A/DQ1 A/DQ0
NC
NC
NC
S29NS-N_00_A12 June 13, 2006
NC
S29NS-N MirrorBit™ Flash Family
9
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5.2
Sheet
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S29NS128N – 48-Ball Very Thin FBGA Connection Diagram
S29NS128N
44-Ball Very Thin FBGA
Top View, Balls Facing Down
NC
NC
A1
A2
A3
A4
A5
RDY
A21
VSS
CLK
VCC
B1
B2
B3
B4
B5
VCCQ
A16
C1
C2
A6
A7
WE# ACC
B6
B7
A20 AVD# NC RESET# WP#
C3
C4
C5
C6
C7
A8
A9
A19
A17
A22
B8
B9
B10
A18
C8
A10
CE# VSSQ
C9
C10
VSS A/DQ7 A/DQ6A/DQ13A/DQ12A/DQ3 A/DQ2 A/DQ9 A/DQ8 OE#
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
A/DQ15A/DQ14 VSSQ A/DQ5 A/DQ4A/DQ11A/DQ10 VCCQ A/DQ1 A/DQ0
NC
10
NC
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
5.3
She et
(Adva nce
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S29NS064N – 44-Ball Very Thin FBGA Connection Diagram
S29NS064N
44-Ball Very Thin FBGA
Top View, Balls Facing Down
NC
NC
A1
A2
A3
A4
A5
RDY
A21
VSS
CLK
VCC
B1
B2
B3
B4
B5
VCCQ
A16
C1
C2
A6
A7
WE# ACC
B6
B7
A20 AVD# NC RESET# WP#
C3
C4
C5
C6
C7
A8
A9
A19
A17
NC
B8
B9
B10
A18
C8
A10
CE# VSSQ
C9
C10
VSS A/DQ7 A/DQ6A/DQ13A/DQ12A/DQ3 A/DQ2 A/DQ9 A/DQ8 OE#
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
A/DQ15A/DQ14 VSSQ A/DQ5 A/DQ4A/DQ11A/DQ10 VCCQ A/DQ1 A/DQ0
NC
5.4
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products in FBGA packages.The package and/or data integrity
may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of
time.
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
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6.
Sheet
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Input/Output Descriptions
A23–A16
= Address Inputs, S29NS256N
A22–A16
= Address Inputs, S29NS128N
A21-A16
= Address Inputs, S29NS064N
A/DQ15–A/DQ0
= Multiplexed Address/Data input/output
CE#
= Chip Enable Input. Asynchronous relative to CLK for the Burst mode
OE#
= Output Enable Input. Asynchronous relative to CLK for the Burst mode
WE#
= Write Enable Input
VCC
= Device Power Supply (1.70V–1.95V)
VCCQ
= Input/Output Power Supply (1.70V–1.95V)
VSS
= Ground
VSSQ
= Input/Output Ground
NC
= No Connect; not connected internally
RDY
= Ready output; indicates the status of the Burst read. VOL= data invalid.
VOH = data valid
CLK
= The first rising edge of CLK in conjunction with AVD# low latches address input and
activates burst mode operation. After the initial word is output, subsequent rising edges
of CLK increment the internal address counter. CLK should remain low during
asynchronous access
AVD#
= Address Valid input. Indicates to device that the valid address is present on the
address inputs (address bits A15–A0 are multiplexed, address bits Amax–A16 are
address only)
VIL = for asynchronous mode, indicates valid address; for burst mode, causes starting
address to be latched on rising edge of CLK.
VIH= device ignores address inputs
6.1
RESET#
= Hardware reset input. VIL= device resets and returns to reading array data
WP#
= Hardware write protect input. VIL = disables writes to SA257–258 (S29NS256N),
SA129–130 (S29NS128N) or SA129-130 (S29NS064N). Should be at VIH for all other
conditions
ACC
= At 9V, accelerates programming; automatically places device in unlock bypass mode.
At VIL, disables program and erase functions. Should be at VIH for all other conditions
Logic Symbol
5 to 8
Amax - A16
CLK
16
A/DQ15–
A/DQ0
CE#
OE#
WE#
RESET#
AVD#
RDY
WP#
ACC
Amax indicates the highest order address bit.
12
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
She et
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7. Ordering Information
The order number (Valid Combination) is formed by the following:
S29NS
256
N
0S
BJ
W
00
0
PACKING TYPE
0
= Tray
2
= 7” Tape and Reel
3
= 13” Tape and Reel
MODEL NUMBER (DYB PROTECT AFTER POWER-UP)
00 = DYB Protect after Power-up
TEMPERATURE RANGE
W
= Wireless (–25°C to +85°C)
PACKAGE TYPE
BJ = Very Thin Fine-Pitch BGA Lead (Pb)-Free LF35 package
SPEED OPTION (BURST FREQUENCY)
0S = 80 MHz
0P = 66 MHz
PROCESS TECHNOLOGY
N = 110 nm MirrorBitTM Technology
FLASH DENSITY
256 = 256 Mb
128 = 128 Mb
064 = 64 Mb
DEVICE FAMILY
S29NS = 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with
Multiplexed I/O Interface
7.1
Valid Combinations
Consult the local sales office to confirm availability of specific valid combinations and to check on newly
released combinations.
S29NSxxxN Valid Combinations
Base Ordering
Part Number
S29NS256N
S29NS128N
S29NS064N
Package &
Temperature
BJW
BJW
BJW
Model
Number
00
00
00
Packing Type
(Note 1, 2)
Package Marking
Speed Options
(MHz)
NS256N0SBJW00
80
NS256N0PBJW00
66
0, 2, 3 (Note 1)
NS128N0SBJW00
80
NS128N0PBJW00
66
NS064N0SBJW00
80
NS064N0PBJW00
66
0, 2, 3 (Note 1)
0, 2, 3 (Note 1)
Package Type
48-ball FBGA
10mm x 11mm
VCD048
44-ball FBGA
9.2mm x 8.0mm
VDD044
44-ball FBGA
7.7mm x 6.2mm
VDE044
Notes
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading “S” and packing type designator from ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability
of specific valid combinations and to check on newly released combinations.
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
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8.
Sheet
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Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is composed of latches that store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the device. Table 8.1 lists the device bus operations, the
inputs and control levels they require, and the resulting output. The following subsections describe each of
these operations in further detail.
Table 8.1 Device Bus Operations
Operation
CE#
OE#
WE#
Amax–16
A/DQ15–0
RESET#
CLK
AVD#
Asynchronous Read
L
L
H
Addr In
I/O
H
L
Write
L
H
L
Addr In
I/O
H
H/L
Standby (CE#)
H
X
X
X
HIGH Z
H
H/L
X
Hardware Reset
X
X
X
X
HIGH Z
L
X
X
L
H
H
Addr In
Addr In
H
H
Burst Read Operations
Load Starting Burst Address
Advance Burst to next address with appropriate
Data presented on the Data Bus
L
L
H
X
Burst
Data Out
Terminate current Burst read cycle
H
X
H
X
HIGH Z
H
Terminate current Burst read cycle via RESET#
X
X
H
X
HIGH Z
L
Terminate current Burst read cycle and start new
Burst read cycle
L
H
H
X
I/O
H
H
X
X
X
Legend
L = Logic 0, H = Logic 1, X = Don’t Care.
Note
Terminating the current Burst cycle is determined by the falling edge of AVD#, while starting a new Burst read cycle is determined by the
rising edge of AVD#.
8.1
VersatileIO™ (VIO) Control
The VersatileIO (VIO) control allows the host system to set the voltage levels that the device generates at its
data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the
VCCQ pin.
8.2
Requirements for Asynchronous Read Operation (Non-Burst)
To read data from the memory array, the system must assert a valid address on Amax–A16 and A/DQ15–A/
DQ0 while AVD# and CE# are at VIL. WE# should remain at VIH. Note that CLK must remain at VIL during
asynchronous read operations. The rising edge of AVD# latches the address, after which the system can
drive OE# to VIL. The data will appear on A/DQ15–A/DQ0. (See Figure 19.4 on page 67.) Since the memory
array is divided into banks, each bank remains enabled for read access until the command register contents
are altered.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the outputs. The
output enable access time (tOE) is the delay from the falling edge of OE# to valid data at the output.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition.
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Data
8.3
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Requirements for Synchronous (Burst) Read Operation
The device is capable of seven different burst read modes: continuous burst read; 8-, 16-, and 32-word linear
burst reads with wrap around; and 8-, 16-, and 32-word linear burst reads without wrap around.
8.3.1
Continuous Burst
When the device first powers up, it is enabled for asynchronous read operation. The device is automatically
enabled for burst mode and addresses are latched on the first rising edge of CLK input, while AVD# is held
low for one clock cycle.
Prior to activating the clock signal, the system should determine how many wait states are desired for the
initial word (tIACC) of each burst session. The system would then write the Set Configuration Register
command sequence.
The initial word is output tIACC after the rising edge of the first CLK cycle. Subsequent words are output tBACC
after the rising edge of each successive clock cycle, which automatically increments the internal address
counter. Note that the device has a fixed internal address boundary that occurs every 128 words,
starting at address 00007Fh. The transition from the highest address 7FFFFFh to 000000h is also a
boundary crossing. During a boundary crossing, there is a no additional latency between the valid read at
address 00007F and the valid read at address 000080 (or between addresses offset from these values by the
same multiple of 128 words) for frequencies equal to or lower than 66 Mhz. For frequencies higher than 66
Mhz, there is a latency of 1 cycle.
During the time the device is outputting data with the starting burst address not divisible by four, additional
waits are required. The RDY output indicates this condition to the system by deasserting.
Table 8.2 through Table 8.5 shows the address latency as a function of variable wait states.
Table 8.2 Address Latency for 7, 6, and 5 Wait States
Word
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
1 ws
D4
D5
D6
D7
D8
7, 6, and 5 ws
2
D2
D3
1 ws
1 ws
D4
D5
D6
D7
D8
3
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
D8
D8
Table 8.3 Address Latency for 4 Wait States
Word
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
1 ws
D4
D5
D6
D7
D8
D9
3
D3
1 ws
1 ws
D4
D5
D6
D7
D8
D9
4 ws
Table 8.4 Address Latency for 3 Wait States
Word
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
1 ws
D4
D5
D6
D7
D8
D9
D10
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Table 8.5 Address Latency for 2 Wait States
Word
0
D0
D1
D2
D3
D4
D5
D6
D7
1
D1
D2
D3
D4
D5
D6
D7
D8
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
2 ws
Table 8.6 through Table 8.8 show the address/boundary crossing latency for variable wait state if a boundary
crossing occurs during initial access
Table 8.6 Address/Boundary Crossing Latency for 7, 6, and 5 Wait States
Word
0
D0
D1
D2
D3
1 ws
D4
D5
D6
D7
1
D1
D2
D3
1 ws
1 ws
D4
D5
D6
D7
7, 6, and 5 ws
2
D2
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
3
D3
1 ws
1 ws
1 ws
1 ws
D4
D5
D6
D7
D7
D8
Table 8.7 Address/Boundary Crossing Latency for 4 Wait States
Word
0
D0
1
D1
D2
D3
D4
D5
D6
D1
D2
D3
1 ws
D4
D5
D6
D7
D8
2
D2
D3
1 ws
1 ws
D4
D5
D6
D7
D8
3
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
D8
4 ws
Figure 8.1 Address/Boundary Crossing Latency for 3 Wait States
Word
0
D0
1
D1
D2
D3
D4
D5
D6
D7
D8
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
1 ws
D4
D5
D6
D7
D8
D9
3
D3
1 ws
1 ws
D4
D5
D6
D7
D8
D9
D8
3 ws
Table 8.8 Address/Boundary Crossing Latency for 2 Wait States
Word
0
1
D0
D1
D2
D3
D4
D5
D6
D7
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
1 ws
D4
D5
D6
D7
D8
D9
D10
2 ws
The device will continue to output continuous, sequential burst data, wrapping around to address 000000h
after it reaches the highest addressable memory location, until the system asserts CE# high, RESET# low, or
AVD# low in conjunction with a new address. See Table 8.1 on page 14. The reset command does not
terminate the burst read operation.
If the host system crosses a 128 word line boundary while reading in burst mode, and the device is not
programming or erasing, no additional latency will occur as described above. If the host system crosses the
bank boundary while the device is programming or erasing, the device will provide asynchronous read status
information. The clock will be ignored. After the host has completed status reads, or the device has completed
the program or erase operation, the host can restart a burst operation using a new address and AVD# pulse.
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8-, 16-, and 32-Word Linear Burst with Wrap Around
These three modes are of the linear wrap around design, in which a fixed number of words are read from
consecutive addresses. In each of these modes, the burst addresses read are determined by the group within
which the starting address falls. The groups are sized according to the number of words read in a single burst
sequence for a given mode (see Table 8.9.)
Table 8.9 Burst Address Groups
Mode
Group Size
Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h, 18-1Fh...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh, 30-3Fh...
32-word
32 words
00-1Fh, 20-3Fh, 40-5Fh, 60-7Fh...
As an example: if the starting address in the 8-word mode is 3Ah, and the burst sequence would be 3A-3B3C-3D-3E-3F-38-39h. The burst sequence begins with the starting address written to the device, but wraps
back to the first address in the selected group. In a similar fashion, the 16-word and 32-word Linear Wrap
modes begin their burst sequence on the starting address written to the device, and then wraps back to the
first address in the selected address group and terminates the burst read. Note that in these three burst
read modes the address pointer does not cross the boundary that occurs every 128 words; thus, no
wait states are inserted (except during the initial access).
8.3.3
8-, 16-, and 32-Word Linear Burst without Wrap Around
In these modes, a fixed number of words (predefined as 8, 16, or 32 words) are read from consecutive
addresses starting with the initial word, which is written to the device. When the address is at the end of the
group address range (see Burst Address Groups Table), the burst read operation stops and the RDY output
goes low. There is no group limitation and is different from the Linear Burst with Wrap Around.
As an example, for 8-word length Burst Read, if the starting address written to the device is 3A, the burst
sequence would be 3A-3B-3C-3D-3E-3F-40-41h, and the read operation will be terminated after all eight
words. The 16-word and 32-word modes would operate in a similar fashion and continuously read to the
predefined 16 or 32 words accordingly. Note: In this burst read mode, the address pointer may cross the
boundary that occurs every 128 words.
8.4
Programmable Wait State
The programmable wait state feature indicates to the device the number of additional clock cycles that must
elapse after AVD# is driven active before data will be available. Upon power up, the device defaults to the
maximum of seven total cycles. The total number of wait states is programmable from two to seven cycles.
For further details, see Set Configuration Register Command Sequence on page 37.
8.5
Configuration Register
The device uses a configuration register to set the various burst parameters: number of wait states, burst
read mode, burst length, RDY configuration, and synchronous mode active.
8.6
Handshaking Feature
The handshaking feature allows the host system to simply monitor the RDY signal from the device to
determine when the initial word of burst data is ready to be read. The host system should use the
configuration register to set the number of wait states for optimal burst mode operation. The initial word of
burst data is indicated by the rising edge of RDY after OE# goes low.
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Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in one of the
other banks of memory. An erase operation may also be suspended to read from or program to another
location within the same bank (except the sector being erased). Figure 19.13 on page 75 shows how read
and write cycles may be initiated for simultaneous operation with zero latency. Refer to the table DC
Characteristics on page 62 for read-while-program and read-while-erase current specifications.
8.8
Writing Commands/Command Sequences
The device has inputs/outputs that accept both address and data information. To write a command or
command sequence (which includes programming data to the device and erasing sectors of memory), the
system must drive AVD# and CE# to VIL, and OE# to VIH when providing an address to the device, and drive
WE# and CE# to VIL, and OE# to VIH. when writing commands or data.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 14-17 indicates the
address space that each sector occupies. The device address space is divided into multiple banks. A “bank
address” is the address bits required to uniquely select a bank. Similarly, a “sector address” is the address
bits required to uniquely select a sector.
Refer to the DC Characteristics table for write mode current specifications. The section AC Characteristics
on page 64 contains timing specification tables and timing diagrams for write operations.
8.9
Accelerated Program and Erase Operations
The device offers accelerated program and erase operation through the ACC function. ACC is primarily
intended to allow faster manufacturing throughput at the factory and not to be used in system operations.
If the system asserts VHH on this input, the device automatically enters the aforementioned Unlock Bypass
mode and uses the higher voltage on the input to reduce the time required for program and erase operations.
The system can then use the abbreviated Embedded Programming command and Write Buffer Load
command sequence provided by the Unlock Bypass mode. Note that if a “Write-to-Buffer-Abort Reset” is
required while in Unlock Bypass mode, the full 3-cycle RESET command sequence must be used to reset
the device. Removing VHH from the ACC input, upon completion of the embedded program or erase
operation, returns the device to normal operation. Note that sectors must be unlocked prior to raising ACC to
VHH. Note that the ACC pin must not be at VHH for operations other than accelerated programming, or device
damage may result. In addition, the ACC pin must not be left floating or unconnected; inconsistent behavior of
the device may result.
When at VIL, ACC locks all sectors. ACC should be at VIH for all other conditions.
8.10
Write Buffer Programming Operation
Write Buffer Programming allows the system to write a maximum of 32 words in one programming
operation. This results in a faster effective word programming time than the standard “word” programming
algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address
in which programming will occur. At this point, the system writes the number of “word locations minus 1”
that will be loaded into the page buffer at the Sector Address in which programming will occur. This tells the
device how many write buffer addresses will be loaded with data and therefore when to expect the “Program
Buffer to Flash” confirm command. The number of locations to program cannot exceed the size of the write
buffer or the operation will abort. (NOTE: The number loaded = the number of locations to program minus 1.
For example, if the system will program 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data
pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must
fall within the “selected-write-buffer-page”, and be loaded in sequential order.
The “write-buffer-page” is selected by using the addresses AMAX-A5 where AMAX is A23 for S29NS256N, A22
for S29NS128N and A21 for S29NS064N.
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The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write
buffer. (This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages”.
This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system
attempts to load programming data outside of the selected “write-buffer-page”, the operation will ABORT.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the
write buffer. Write buffer locations must be loaded in sequential order.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter will be
decremented for every data load operation. Also, the last data loaded at a location before the “Program
Buffer to Flash” confirm command will be programmed into the device. It is the software’s responsibility to
comprehend ramifications of loading a write-buffer location more than once. The counter decrements for
each data load operation, NOT for each unique write-buffer-address location.
Once the specified number of write buffer locations have been loaded, the system must then write the
“Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations will
abort the Write Buffer Programming operation. The device will then “go busy”. The Data Bar polling
techniques should be used while monitoring the last address location loaded into the write buffer. This
eliminates the need to store an address in memory because the system can load the last address location,
issue the program confirm command at the last loaded address location, and then data bar poll at that same
address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write
Buffer Programming.
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device will return to
READ mode.
The Write Buffer Programming Sequence can be ABORTED under any of the following conditions:
„ Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
„ Write to an address in a sector different than the one specified during the “Write-Buffer-Load” command.
„ Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
„ Write data other than the “Confirm Command” after the specified number of “data load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-toBuffer-Abort reset” command sequence is required when using the Write-Buffer-Programming features in
Unlock Bypass mode. Note: The Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is allowed in any sequence of memory (or address) locations. These
flash devices are capable of handling multiple write buffer programming operations on the same write buffer
address range without intervening erases. However, programming the same word address multiple times
without intervening erases requires a modified programming method. Please contact your local SpansionTM
representative for details.
8.11
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output from the internal register (which is separate from the memory array) on DQ15–
DQ0. This mode is primarily intended for programming equipment to automatically match a device to be
programmed with its corresponding programming algorithm. The autoselect codes can also be accessed insystem.
When verifying sector protection, the sector address must appear on the appropriate highest order address
bits. The remaining address bits are don’t care. When all necessary bits have been set as required, the
programming equipment may then read the corresponding identifier code on DQ15–DQ0. The autoselect
codes can also be accessed in-system through the command register. The command sequence is illustrated
in Table 11.4, Command Definitions on page 52. Note that if a Bank Address (BA) on address bits A23, A22,
A21, and A20 for the NS256N, A22, A21, A20, A19 for the NS128N and A21, A20, and A19 for the NS064N,
is asserted during the third write cycle of the autoselect command, the host system can read autoselect data
that bank and then immediately read array data from the other bank, without exiting the autoselect mode.
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To access the autoselect codes, the host system must issue the autoselect command via the command
register, as shown in Table 11.4, Command Definitions on page 52.
8.12
Advanced Sector Protection and Unprotection
This advanced security feature provides an additional level of protection to all sectors against inadvertent
program or erase operations.
The advanced sector protection feature disables both programming and erase operations in any sector while
the advanced sector unprotection feature re-enables both program and erase operations in previously
protected sectors. Sector protection/unprotection can be implemented using either of the two methods
„ Hardware method
„ Software method
Persistent/Password Sector Protection is achieved by using the software method while the sector protection
with WP# pin is achieved by using the hardware method.
All parts default to operate in the Persistent Sector Protection mode. The customer must then choose if the
Persistent or Password Protection method is most desirable. There are two one-time programmable nonvolatile bits that define which sector protection method will be used.
„ Persistent Mode Lock Bit
„ Password Mode Lock Bit
If the customer decides to continue using the Persistent Sector Protection method, they must set the
Persistent Mode Lock Bit. This will permanently set the part to operate only using Persistent Sector
Protection. However, if the customer decides to use the Password Sector Protection method, they must set
the Password Mode Lock Bit. This will permanently set the part to operate only using Password Sector
Protection.
It is important to remember that setting either the Persistent Mode Lock Bit or the Password Mode Lock
Bit permanently selects the protection mode. It is not possible to switch between the two methods once a
locking bit has been set. It is important that one mode is explicitly selected when the device is first
programmed, rather than relying on the default mode alone. If both are selected to be set at the same
time, the operation will abort. This is done so that it is not possible for a system program or virus to later set
the Password Mode Locking Bit, which would cause an unexpected shift from the default Persistent Sector
Protection Mode into the Password Sector Protection Mode.
The device is shipped with all sectors unprotected. Spansion offers the option of programming and protecting
sectors at the factory prior to shipping the device through Spansion programming services. Contact an
Spansion representative for details.
8.13
Sector Protection
The device features several levels of sector protection, which can disable both the program and erase
operations in certain sectors.
„ Persistent Sector Protection
A software enabled command sector protection method that replaces the old 12 V controlled protection
method.
„ Password Sector Protection
A highly sophisticated software enabled protection method that requires a password before changes to
certain sectors or sector groups are permitted
„ WP# Hardware Protection
A write protect pin (WP#) can prevent program or erase operations in the outermost sectors.The WP#
Hardware Protection feature is always available, independent of the software managed protection method
chosen.
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Persistent Sector Protection
The Persistent Sector Protection method replaces the old 12 V controlled protection method while at the
same time enhancing flexibility by providing three different sector protection states:
„ Persistently Locked—A sector is protected and cannot be changed.
„ Dynamically Locked—The sector is protected and can be changed by a simple command
„ Unlocked—The sector is unprotected and can be changed by a simple command
In order to achieve these states, three types of “bits” namely Persistent Protection Bit (PPB), Dynamic
Protection Bit (DYB), and Persistent Protection Bit Lock (PPB Lock) are used to achieve the desired sector
protection scheme:
8.14.1
Persistent Protection Bit (PPB)
PPB is used to as an advanced security feature to protect individual sectors from being programmed or
erased thereby providing additional level of protection. Every sector is assigned a Persistent Protection Bit.
Each PPB is individually programmed through the PPB Program Command. However all PPBs are erased
in parallel through the All PPB Erase Command. Prior to erasing, these bits don’t have to be pre
programmed. The Embedded Erase algorithm automatically preprograms and verifies prior to an electrical
erase. The system is not required to provide any controls or timings during these operations.
The PPBs retain their state across power cycles because they are Non-Volatile. The PPBs has the same
endurance as the flash memory.
8.14.2
Persistent Protection Bit Lock (PPB Lock Bit) in Persistent Sector Protection
Mode
PPB Lock Bit is a global volatile bit and provides an additional level of protection to the sectors. When
programmed (set to “0”), all the PPBs are locked and hence none of them can be changed. When erased
(cleared to “1”), the PPBs are changeable. There is only one PPB Lock Bit in every device. Only a hardware
reset or a power-up clears the PPB Lock Bit. It is to be noted that there is no software solution, i.e. command
sequence to unlock the PPB Lock Bit.
Once all PPBs are configured to the desired settings, the PPB Lock Bit may be set (programmed to “0”). The
PPB Lock Bit is set by issuing the PPB Lock Bit Set Command. Programming or setting the PPB Lock Bit
disables program and erase commands to all the PPBs. In effect, the PPB Lock Bit locks the PPBs into their
current state. The only way to clear the PPB Lock Bit is to go through a hardware or power-up reset. System
boot code can determine if any changes to the PPB are needed e.g. to allow new system code to be
downloaded. If no changes are needed then the boot code can disable the PPB Lock Bit to prevent any
further changes to the PPBs during system operation.
8.14.3
Dynamic Protection Bit (DYB)
DYB is a security feature used to protect individual sectors from being programmed or erased inadvertently. It
is a volatile protection bit and is assigned to each sector. Upon power-up, the contents of all DYBs are set
(programmed to “0”). Each DYB can be individually modified through the DYB Set Command or the DYB
Clear Command.
The Protection Status for a particular sector is determined by the status of the PPB and the DYB relative to
that sector. For the sectors that have the PPBs cleared (erased to “1”), the DYBs control whether or not the
sector is protected or unprotected. By issuing the DYB Set or Clear command sequences, the DYBs will be
set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the protected or unprotected
state respectively. These states are the so-called Dynamic Locked or Unlocked states due to the fact that
they can switch back and forth between the protected and unprotected states. This feature allows software to
easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when
changes are needed. The DYBs maybe set (programmed to “0”) or cleared (erased to “1”) as often as
needed.
When the parts are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs
are set (programmed to “0”). The PPB Lock Bit defaults to the cleared state (erased to “1”) after power up and
the PPBs retain their previous state as they are non-volatile.
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Note: Dynamic protection bits revert back to their default values after programming device’s “Lock Register.”
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state.
The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB
Set command sequence is all that is necessary. The DYB Set or Clear command for the dynamic sectors
signify protected or unprotected state of the sectors respectively. However, if there is a need to change the
status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be
cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be
changed to reflect the desired settings. Setting the PPB Lock Bit once again will lock the PPBs, and the
device operates normally again.
Note: To achieve the best protection, it’s recommended to execute the PPB Lock Bit Set command early in
the boot code, and protect the boot code by holding WP# = VIL. Note that the PPB and DYB bits have the
same function when ACC = VHH as they do when ACC = VIH.
Table 8.10 Sector Protection Schemes
DYB
PPB
PPB Lock
1
1
1
Sector Unprotected
Sector State
0
1
1
Sector Protected through DYB
1
0
1
Sector Protected through PPB
0
0
1
Sector Protected through PPB and DYB
1
1
0
Sector Unprotected
0
1
0
Sector Protected through DYB
1
0
0
Sector Protected through PPB
0
0
0
Sector Protected through PPB and DYB
Table 8.10 contains all possible combinations of the DYB, PPB, and PPB Lock relating to the status of the
sector.
In summary, if the PPB is set (programmed to “0”), and the PPB Lock is set (programmed to “0”), the sector is
protected and the protection can not be removed until the next power cycle clears (erase to “1”) the PPB Lock
Bit. Once the PPB Lock Bit is cleared (erased to “1”), the sector can be persistently locked or unlocked.
Likewise, if both PPB Lock Bit or PPB is cleared (erased to “1”) the sector can then be dynamically locked or
unlocked. The DYB then controls whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected sector, the device ignores the command and returns to
read mode. A program or erase command to a protected sector enables status polling and returns to read
mode without having modified the contents of the protected sector.
The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing individual
status read commands DYB Status, PPB Status, and PPB Lock Status to the device.
8.15
Persistent Sector Protection Mode Lock Bit
A Persistent Mode Lock Bit exists to guarantee that the device remain in software sector protection. Once
programmed (set to “0”), the Persistent Mode Lock Bit prevents programming of the Password Mode Lock Bit.
This guarantees that now, a hacker cannot place the device in Password Sector Protection Mode.
8.16
Password Sector Protection
The Password Sector Protection Mode method allows an even higher level of security than the Persistent
Sector Protection Mode. There are two main differences between the Persistent Sector Protection Mode and
the Password Sector Protection Mode:
„ When the device is first powered up, or comes out of a reset cycle, the PPB Lock Bit is set to the locked
state, rather than cleared to the unlocked state.
„ The only means to clear the PPB Lock Bit is by writing a unique 64-bit Password to the device.
The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in this method.
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The password is stored in a one-time programmable (OTP) region of the flash memory. Once the Password
Mode Lock Bit is set, the password is permanently set with no means to read, program, or erase it. The
password is used to clear the PPB Lock Bit. The Password Unlock command must be written to the flash,
along with a password. The flash device internally compares the given password with the pre-programmed
password. If they match, the PPB Lock Bit is cleared, and the PPBs can be altered. If they do not match, the
flash device does nothing. There is a built-in 1 µs delay for each “password check.” This delay is intended to
thwart any efforts to run a program that tries all possible combinations in order to crack the password.
8.17
64-bit Password
The 64-bit Password is located in a non-erasable region of the FLash and is accessible through the use of the
Password Program and Verify commands (see Password Protection Command Set Definitions on page 48).
The password function works in conjunction with the Password Mode Locking Bit, which when set, prevents
the Password Verify command from reading the contents of the password on the pins of the device.
8.18
Password Mode Lock Bit
In order to select the Password Sector Protection scheme, the customer must first program the password.
Spansion LLC recommends that the password be somehow correlated to the unique Electronic Serial
Number (ESN) of the particular flash device. Each ESN is different for every flash device; therefore each
password should be different for every flash device. While programming in the password region, the customer
may perform Password Verify operations.
Once the desired password is programmed in, the customer must then set the Password Mode Locking Bit.
This operation achieves two objectives:
„ It permanently sets the device to operate using the Password Sector Protection Mode. It is not possible to
reverse this function.
„ It also disables all further commands to the password region. All program and read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The
user must be sure that the Password Sector Protection method is desired when setting the Password Mode
Locking Bit. More importantly, the user must be sure that the password is correct when the Password Mode
Locking Bit is set. Due to the fact that read operations are disabled, there is no means to verify what the
password is afterwards. If the password is lost after setting the Password Mode Lock Bit, there will be no way
to clear the PPB Lock Bit.
The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the DQ bus and further
password programming. The Password Mode Lock Bit is not erasable. Once Password Mode Lock Bit is
programmed, the Persistent Mode Lock Bit is disabled from programming, guaranteeing that no changes to
the protection scheme are allowed.
8.19
Persistent Protection Bit Lock (PPB Lock Bit) in Password Sector
Protection Mode
The Persistent Protection Bit Lock (PPB Lock Bit) is a volatile bit that reflects the state of the Password Mode
Lock Bit after power-up reset. If the Password Mode Lock Bit is also set, after a hardware reset (RESET#
asserted) or a power-up reset, the ONLY means for clearing the PPB Lock Bit in Password Protection Mode
is to issue the Password Unlock command. Successful execution of the Password Unlock command to enter
the entire password clears the PPB Lock Bit, allowing for sector PPBs modifications. Asserting RESET#,
taking the device through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit
to a “1”.
If the Password Mode Lock Bit is not set (device is operating in the default Persistent Protection Mode). The
Password Unlock command is ignored in Persistent Sector Protection Mode.
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Hardware Data Protection Mode
The device offers two types of data protection at the sector level:
1. When WP# is at VIL, the two outermost sectors at the top are locked (device specific).
1. When ACC is at VIL, all sectors are locked.
SA257 and SA258 are locked (S29NS256N)
SA129 and SA130 are locked (S29NS128N)
SA129 and SA130 are locked (S29NS064N)
The write protect pin (WP#) adds a final level of hardware program and erase protection to the boot sectors.
The boot sectors are the two sectors containing the highest set of addresses in these top-boot-configured
devices. For the none boot option, the WP# hardware feature is not available. When this pin is low it is not
possible to change the contents of these top sectors. These sectors generally hold system boot code.
So, the WP# pin can prevent any changes to the boot code that could override the choices made while setting
up sector protection during system initialization.
The following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or
from system noise.
8.20.1
Write Protect (WP#)
The Write Protect feature provides a hardware method of protecting the two outermost sectors. This function
is provided by the WP# pin and overrides the previously discussed Sector Protection/Unprotection method.
If the system asserts VIL on the WP# pin, the device disables program and erase functions in the “top” boot
sectors. If the system asserts VIH on the WP# pin, the device reverts to whether the boot sectors were last set
to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on
whether they were last protected or unprotected.
8.21
WP# Boot Sector Protection
The WP# signal will be latched at a specific time in the embedded program or erase sequence. To prevent a
write to the top two sectors, WP# must be asserted (WP#=VIL) on the last write cycle of the embedded
sequence (i.e., 4th write cycle in embedded program, 6th write cycle in embedded erase).
If selecting multiple sectors for erasure: The WP# protection status is latched only on the 6th write cycle of the
embedded sector erase command sequence when the first sector is selected. If additional sectors are
selected for erasure, they are subject to the WP# status that was latched on the 6th write cycle of the
command sequence.
Note that the WP# pin must not be left floating or unconnected; inconsistent behavior of the device may
result.
8.22
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and all internal program/erase circuits are disabled, and
the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is
greater than VLKO.
8.23
Write Pulse “Glitch” Protection
Noise pulses of less than tWEP on WE# do not initiate a write cycle.
8.24
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a logical one.
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8.24.1
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Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the
rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up
8.25
Lock Register
The Lock Register consists of 3 bits. Each of these bits are non-volatile and read-only. DQ15-DQ3 are
reserved and are undefined.
Table 8.11 Lock Register
DQ15-DQ3
Undefined
DQ2
Password Protection Mode Lock Bit
DQ1
Persistent Protection Mode Lock Bit
DQ0
Secured Silicon Sector
Protection Bit
Note
When the device lock register is programmed (PPB mode lock bit is programmed, password mode lock bit programmed, or the Secured
Silicon lock bit is programmed) all DYBs revert to the power-on default state.
8.26
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC. The
device requires standard access time (tCE) for read access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
ICC3 in the DC Characteristics table represents the standby current specification.
8.27
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enters this
mode when addresses and clock remain stable for tACC + 20 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses
are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC
Characteristics table represents the automatic sleep mode current specification.
8.28
RESET#: Hardware Reset Input
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#
is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates
all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also
resets the internal state machine to reading array data. The operation that was interrupted should be
reinitiated once the device is ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS, the device draws
CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS, the standby current will be greater.
RESET# may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 19.5 on page 68 for the timing
diagram.
8.28.1
VCC Power-up and Power-down Sequencing
The device imposes no restrictions on VCC power-up or power-down sequencing. Asserting RESET# to VIL is
required during the entire VCC power sequence until the respective supplies reach their operating voltages.
Once VCC attains its operating voltage, de-assertion of RESET# to VIH is permitted.
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Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high
impedance state.
8.30
Secured Silicon Sector SectorFlash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent part
identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 words in length.
All reads outside of the 256 word address range will return non-valid data. The Factory Indicator Bit (DQ7) is
used to indicate whether or not the Factory Secured Silicon Sector is locked when shipped from the factory.
The Customer Indicator Bit (DQ6) is used to indicate whether or not the Customer Secured Silicon Sector is
locked when shipped from the factory. The Factory Secured Silicon bits are permanently set at the factory
and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN
and customer code once the product is shipped to the field.
Spansion offers the device with a Factory Secured Silicon Sector that is locked and a Customer Secured
Silicon Sector that is either locked or is lockable. The Factory Secured Silicon Sector is always protected
when shipped from the factory, and has the Factory Indicator Bit (DQ7) permanently set to a “1”. The
Customer Secured Silicon Sector is shipped unprotected, allowing customers to utilize that sector in any
manner they choose. Once the Customer Secured Silicon Sector area is protected, the Customer Indicator
Bit will be permanently set to “1.”
The system accesses the Secured Silicon Sector through a command sequence (see Enter/Exit Secured
Silicon Sector Command Sequence on page 40). After the system has written the Enter Secured Silicon
Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally
occupied by sector SA0 of the memory array. This mode of operation continues until the system issues the
Exit Secured Silicon Sector command sequence, or until power is removed from the device. While Secured
Silicon Sector access is enabled, Memory Array read access, program operations, and erase operations to all
sectors other than SA0 are also available. On power-up, or following a hardware reset, the device reverts to
sending commands to the normal address space.
8.30.1
Factory Locked: Factor Secured Silicon Sector Programmed and Protected At
the Factory
In a factory sector locked device, the Factory Secured Silicon Sector is protected when the device is shipped
from the factory. The Factory Secured Silicon Sector cannot be modified in any way. The device is pre
programmed with both a random number and a secure ESN. The Factory Secured Silicon Sector is located at
addresses 000000h–00007Fh.
The device is available pre programmed with one of the following:
„ A random, secure ESN only within the Factor Secured Silicon Sector
„ Customer code within the Customer Secured Silicon Sector through the SpansionTM programming services
„ Both a random, secure ESN and customer code through the SpansionTM programming services.
Table 8.12 Secured Silicon SectorSecure Sector Addresses
Sector
Sector Size
Address Range
Customer
128 words
000080h-0000FFh
Factory
128 words
000000h-00007Fh
Customers may opt to have their code programmed by Spansion through the SpansionTM programming
services. Spansion programs the customer’s code, with or without the random ESN. The devices are then
shipped from Spansion’s factory with the Factory Secured Silicon Sector and Customer Secured Silicon
Sector permanently locked. Contact an Spansion representative for details on using Spansion’s SpansionTM
programming services.
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8.30.2
She et
(Adva nce
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Customer Secured Silicon Sector
If the security feature is not required, the Customer Secured Silicon SectorSecure Sector can be treated as
an additional Flash memory space. The Customer Secured Silicon Sector can be read any number of times,
but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock
bypass functions are not available when programming the Customer Secured Silicon Sector, but reading the
first Bank through the last bank is available. The Customer Secured Silicon Sector is located at addresses
000080h–0000FFh.
The Customer Secured Silicon Sector area can be protected by writing the Secured Silicon Sector Protection
Bit Lock command sequence.
Once the Customer Secured Silicon Sector is locked and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to reading and writing SA0 in the memory array.
The Customer Secured Silicon Sector lock must be used with caution since, once locked, there is no
procedure available for unlocking the Customer Secured Silicon Sector area and none of the bits in the
Customer Secured Silicon Sector memory space can be modified in any way.
9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h any time the device is ready to read array data. The system can read CFI information at the addresses
given in Tables 9.1–9.5. To terminate reading CFI data, the system must write the reset command.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact the local sales representative for copies of
these documents.
Table 9.1 CFI Query Identification String
Data
Addresses
S29NS256N
S29NS128N
S29NS064N
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
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Table 9.2 System Interface String
Data
Addresses
S29NS256N
S29NS128N
S29NS064N
Description
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
ACC Min. voltage (00h = no ACC pin present) Refer to 4Dh
1Eh
0000h
ACC Max. voltage (00h = no ACC pin present) Refer to 4Eh
1Fh
0006h
Typical timeout per single byte/word write 2N µs
20h
0009h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2N times typical
24h
0001h
Max. timeout for buffer write 2N times typical
25h
0002h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 9.3 Device Geometry Definition
Data
Addresses
S29NS256N
S29NS128N
S29NS064N
27h
0019h
0018h
0017h
28h
0001h
29h
0000h
Description
Device Size = 2N byte
Flash Device Interface description (refer to CFI publication 100)
2Ah
0006h
2Bh
0000h
Max. number of bytes in multi-byte write = 2N (00h = not supported)
2Ch
0002h
Number of Erase Block Regions within device
2Dh
00FEh
007Eh
007Eh
2Eh
0000h
0000h
0000h
2Fh
0000h
0000h
0000h
30h
0002h
0002h
0001h
31h
0003h
0007h
32h
0000h
0000h
33h
0080h
0020h
34h
0000h
0000h
Erase Block Region 1 Information (refer to the CFI specification or
CFI publication 100)
Erase Block Region 2 Information
35h
0000h
36h
0000h
37h
0000h
38h
0000h
Erase Block Region 3 Information
39h
0000h
3Ah
0000h
3Bh
0000h
3Ch
0000h
Erase Block Region 4 Information
28
S29NS-N MirrorBit™ Flash Family
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Data
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Table 9.4 Primary Vendor-Specific Extended Query
Data
Addresses
S29NS256N
S29NS128N
40h
0050h
41h
0052h
42h
0049h
S29NS064N
Description
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0034h
Minor version number, ASCII
45h
0010h
Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon
Revision Number (Bits 7-2)
46h
0002h
Erase Suspend 0 = Not Supported, 1 = To Read Only, 2= To Read & Write
47h
0001h
Sector Protect 0 = Not Supported, X = Number of sectors in per group
48h
0000h
Sector Temporary Unprotect 00 = Not Supported, 01 = Supported
49h
0008h
Sector Protect/Unprotect scheme 08 = Advanced Sector Protection
4Ah
00F0h
0078h
0070h
Simultaneous Operation Number of Sectors in all banks except boot bank
4Bh
0001h
4Ch
0000h
Burst Mode Type 00 = Not Supported, 01 = Supported
Page Mode 00 = Not Supported, 01 = Supported
4Dh
0085h
ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3D0: 100 mv
4Eh
0095h
ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3D0: 100 mv
4Fh
0003h
Top/Bottom Boot Sector Flag 0001h = Top/Middle Boot Device, 0002h =
Bottom Boot Device, 03h = Top Boot Device
50h
0001h
Program Suspend. 00h = not supported
51h
0001h
Unlock Bypass 00 = Not Supported, 01 = Supported
52h
0008h
Secured Silicon Sector (Customer OTP Area) Size 2N bytes
53h
0008h
Hardware Reset Low Time-out during an embedded algorithm to read more
mode Maximum 2N ns
54h
0008h
Hardware Reset Low Time-out during an embedded algorithm to read more
mode Maximum 2N ns
55h
0005h
Erase Suspend Time-out Maximum 2N ns
56h
0005h
Program Suspend Time-out Maximum 2N ns
57h
0010h
0010h
0008h
Bank Organization: X = Number of banks
58h
0010h
0008h
0010h
Bank 0 Region Information. X = Number of sectors in banks
59h
0010h
0008h
0010h
Bank 1 Region Information. X = Number of sectors in banks
5Ah
0010h
0008h
0010h
Bank 2 Region Information. X = Number of sectors in banks
5Bh
0010h
0008h
0010h
Bank 3 Region Information. X = Number of sectors in banks
5Ch
0010h
0008h
0010h
Bank 4 Region Information. X = Number of sectors in banks
5Dh
0010h
0008h
0010h
Bank 5 Region Information. X = Number of sectors in banks
5Eh
0010h
0008h
0010h
Bank 6 Region Information. X = Number of sectors in banks
5Fh
0010h
0008h
0013h
Bank 7 Region Information. X = Number of sectors in banks
60h
0010h
0008h
0000h
Bank 8 Region Information. X = Number of sectors in banks
61h
0010h
0008h
0000h
Bank 9 Region Information. X = Number of sectors in banks
62h
0010h
0008h
0000h
Bank 10 Region Information. X = Number of sectors in banks
63h
0010h
0008h
0000h
Bank 11 Region Information. X = Number of sectors in banks
64h
0010h
0008h
0000h
Bank 12 Region Information. X = Number of sectors in banks
65h
0010h
0008h
0000h
Bank 13 Region Information. X = Number of sectors in banks
66h
0010h
0008h
0000h
Bank 14 Region Information. X = Number of sectors in banks
67h
0013h
000Bh
0000h
Bank 15 Region Information. X = Number of sectors in banks
68h
S29NS-N_00_A12 June 13, 2006
0002h
Process Technology. 00h = 230nm, 01h = 170nm, 02h = 130nm/110nm
S29NS-N MirrorBit™ Flash Family
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Table 9.5 Sector Address Table, S29NS256N (Sheet 1 of 3)
30
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
64 Kwords
000000h–00FFFFh
SA32
64 Kwords
200000h–20FFFFh
64 Kwords
010000h–01FFFFh
SA33
64 Kwords
210000h–21FFFFh
SA2
64 Kwords
020000h–02FFFFh
SA34
64 Kwords
220000h–22FFFFh
SA3
64 Kwords
030000h–03FFFFh
SA35
64 Kwords
230000h–23FFFFh
SA4
64 Kwords
040000h–04FFFFh
SA36
64 Kwords
240000h–24FFFFh
SA5
64 Kwords
050000h–05FFFFh
SA37
64 Kwords
250000h–25FFFFh
SA6
64 Kwords
060000h–06FFFFh
SA38
64 Kwords
260000h–26FFFFh
SA7
64 Kwords
070000h–07FFFFh
SA39
64 Kwords
270000h–27FFFFh
SA8
64 Kwords
080000h–08FFFFh
SA40
64 Kwords
280000h–28FFFFh
SA9
64 Kwords
090000h–09FFFFh
SA41
64 Kwords
290000h–29FFFFh
SA10
64 Kwords
0A0000h–0AFFFFh
SA42
64 Kwords
2A0000h–2AFFFFh
SA11
64 Kwords
0B0000h–0BFFFFh
SA43
64 Kwords
2B0000h–2BFFFFh
SA12
64 Kwords
0C0000h–0CFFFFh
SA44
64 Kwords
2C0000h–2CFFFFh
SA13
64 Kwords
0D0000h–0DFFFFh
SA45
64 Kwords
2D0000h–2DFFFFh
SA14
64 Kwords
0E0000h–0EFFFFh
SA46
64 Kwords
2E0000h–2EFFFFh
SA15
64 Kwords
0F0000h–0FFFFFh
SA47
64 Kwords
2F0000h–2FFFFFh
Bank 2
SA0
SA1
64 Kwords
100000h–10FFFFh
SA48
64 Kwords
300000h–30FFFFh
64 Kwords
110000h–11FFFFh
SA49
64 Kwords
310000h–31FFFFh
SA18
64 Kwords
120000h–12FFFFh
SA50
64 Kwords
320000h–32FFFFh
SA19
64 Kwords
130000h–13FFFFh
SA51
64 Kwords
330000h–33FFFFh
SA20
64 Kwords
140000h–14FFFFh
SA52
64 Kwords
340000h–34FFFFh
SA21
64 Kwords
150000h–15FFFFh
SA53
64 Kwords
350000h–35FFFFh
SA22
64 Kwords
160000h–16FFFFh
SA54
64 Kwords
360000h–36FFFFh
SA23
64 Kwords
170000h–17FFFFh
SA55
64 Kwords
370000h–37FFFFh
SA24
64 Kwords
180000h–18FFFFh
SA56
64 Kwords
380000h–38FFFFh
SA25
64 Kwords
190000h–19FFFFh
SA57
64 Kwords
390000h–39FFFFh
SA26
64 Kwords
1A0000h–1AFFFFh
SA58
64 Kwords
3A0000h–3AFFFFh
SA27
64 Kwords
1B0000h–1BFFFFh
SA59
64 Kwords
3B0000h–3BFFFFh
SA28
64 Kwords
1C0000h–1CFFFFh
SA60
64 Kwords
3C0000h–3CFFFFh
SA29
64 Kwords
1D0000h–1DFFFFh
SA61
64 Kwords
3D0000h–3DFFFFh
SA30
64 Kwords
1E0000h–1EFFFFh
SA62
64 Kwords
3E0000h–3EFFFFh
SA31
64 Kwords
1F0000h–1FFFFFh
SA63
64 Kwords
3F0000h–3FFFFFh
Bank 3
SA16
SA17
SA64
64 Kwords
400000h–40FFFFh
SA96
64 K words
600000h–60FFFFh
SA65
64 Kwords
410000h–41FFFFh
SA97
64 K words
610000h–61FFFFh
SA66
64 Kwords
420000h–42FFFFh
SA98
64 K words
620000h–62FFFFh
SA67
64 Kwords
430000h–43FFFFh
SA99
64 K words
630000h–63FFFFh
SA68
64 Kwords
440000h–44FFFFh
SA100
64 K words
640000h–64FFFFh
SA69
64 Kwords
450000h–45FFFFh
SA101
64 K words
650000h–65FFFFh
SA70
64 Kwords
460000h–46FFFFh
SA102
64 K words
660000h–66FFFFh
SA71
64 Kwords
470000h–47FFFFh
SA103
64 K words
670000h–67FFFFh
SA72
64 Kwords
480000h–48FFFFh
SA104
64 K words
680000h–68FFFFh
SA73
64 Kwords
490000h–49FFFFh
SA105
64 K words
690000h–69FFFFh
SA74
64 Kwords
4A0000h–4AFFFFh
SA106
64 K words
6A0000h–6AFFFFh
SA75
64 Kwords
4B0000h–4BFFFFh
SA107
64 K words
6B0000h–6BFFFFh
SA76
64 Kwords
4C0000h–4CFFFFh
SA108
64 K words
6C0000h–6CFFFFh
SA77
64 Kwords
4D0000h–4DFFFFh
SA109
64 K words
6D0000h–6DFFFFh
SA78
64 Kwords
4E0000h–4EFFFFh
SA110
64 K words
6E0000h–6EFFFFh
SA79
64 Kwords
4F0000h–4FFFFFh
SA111
64 K words
6F0000h–6FFFFFh
Bank 6
Bank 4
Bank 1
Bank 0
Bank
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
She et
(Adva nce
In for ma ti on)
Table 9.5 Sector Address Table, S29NS256N (Sheet 2 of 3)
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
64 Kwords
500000h–50FFFFh
SA112
64 K words
700000h–70FFFFh
64 Kwords
510000h–51FFFFh
SA113
64 K words
710000h–71FFFFh
SA82
64 Kwords
520000h–52FFFFh
SA114
64 K words
720000h–72FFFFh
SA83
64 Kwords
530000h–53FFFFh
SA115
64 K words
730000h–73FFFFh
SA84
64 Kwords
540000h–54FFFFh
SA116
64 K words
740000h–74FFFFh
SA85
64 Kwords
550000h–55FFFFh
SA117
64 K words
750000h–75FFFFh
SA86
64 Kwords
560000h–56FFFFh
SA118
64 K words
760000h–76FFFFh
SA87
64 Kwords
570000h–57FFFFh
SA119
64 K words
770000h–77FFFFh
SA88
64 Kwords
580000h–58FFFFh
SA120
64 K words
780000h–78FFFFh
SA89
64 Kwords
590000h–59FFFFh
SA121
64 K words
790000h–79FFFFh
SA90
64 Kwords
5A0000h–5AFFFFh
SA122
64 K words
7A0000h–7AFFFFh
SA91
64 Kwords
5B0000h–5BFFFFh
SA123
64 K words
7B0000h–7BFFFFh
SA92
64 Kwords
5C0000h–5CFFFFh
SA124
64 K words
7C0000h–7CFFFFh
SA93
64 Kwords
5D0000h–5DFFFFh
SA125
64 K words
7D0000h–7DFFFFh
SA94
64 Kwords
5E0000h–5EFFFFh
SA126
64 K words
7E0000h–7EFFFFh
SA95
64 Kwords
5F0000h–5FFFFFh
SA127
64 K words
7F0000h–7FFFFFh
Bank 7
SA80
SA81
64 Kwords
800000h–80FFFFh
SA160
64 Kwords
A00000h–A0FFFFh
64 Kwords
810000h–81FFFFh
SA161
64 Kwords
A10000h–A1FFFFh
SA130
64 Kwords
820000h–82FFFFh
SA162
64 Kwords
A20000h–A2FFFFh
SA131
64 Kwords
830000h–83FFFFh
SA163
64 Kwords
A30000h–A3FFFFh
SA132
64 Kwords
840000h–84FFFFh
SA164
64 Kwords
A40000h–A4FFFFh
SA133
64 Kwords
850000h–85FFFFh
SA165
64 Kwords
A50000h–A5FFFFh
SA134
64 Kwords
860000h–86FFFFh
SA166
64 Kwords
A60000h–A6FFFFh
SA135
64 Kwords
870000h–87FFFFh
SA167
64 Kwords
A70000h–A7FFFFh
SA136
64 Kwords
880000h–88FFFFh
SA168
64 Kwords
A80000h–A8FFFFh
SA137
64 Kwords
890000h–89FFFFh
SA169
64 Kwords
A90000h–A9FFFFh
SA138
64 Kwords
8A0000h–8AFFFFh
SA170
64 Kwords
AA0000h–AAFFFFh
SA139
64 Kwords
8B0000h–8BFFFFh
SA171
64 Kwords
AB0000h–ABFFFFh
SA140
64 Kwords
8C0000h–8CFFFFh
SA172
64 Kwords
AC0000h–ACFFFFh
SA141
64 Kwords
8D0000h–8DFFFFh
SA173
64 Kwords
AD0000h–ADFFFFh
SA142
64 Kwords
8E0000h–8EFFFFh
SA174
64 Kwords
AE0000h–AEFFFFh
SA143
64 Kwords
8F0000h–8FFFFFh
SA175
64 Kwords
AF0000h–AFFFFFh
Bank 10
SA128
SA129
SA144
64 Kwords
900000h–90FFFFh
SA176
64 Kwords
B00000h–B0FFFFh
SA145
64 Kwords
910000h–91FFFFh
SA177
64 Kwords
B10000h–B1FFFFh
SA146
64 Kwords
920000h–92FFFFh
SA178
64 Kwords
B20000h–B2FFFFh
SA147
64 Kwords
930000h–93FFFFh
SA179
64 Kwords
B30000h–B3FFFFh
SA148
64 Kwords
940000h–94FFFFh
SA180
64 Kwords
B40000h–B4FFFFh
SA149
64 Kwords
950000h–95FFFFh
SA181
64 Kwords
B50000h–B5FFFFh
SA150
64 Kwords
960000h–96FFFFh
SA182
64 Kwords
B60000h–B6FFFFh
SA151
64 Kwords
970000h–97FFFFh
SA183
64 Kwords
B70000h–B7FFFFh
SA152
64 Kwords
980000h–98FFFFh
SA184
64 Kwords
B80000h–B8FFFFh
SA153
64 Kwords
990000h–99FFFFh
SA185
64 Kwords
B90000h–B9FFFFh
SA154
64 Kwords
9A0000h–9AFFFFh
SA186
64 Kwords
BA0000h–BAFFFFh
SA155
64 Kwords
9B0000h–9BFFFFh
SA187
64 Kwords
BB0000h–BBFFFFh
SA156
64 Kwords
9C0000h–9CFFFFh
SA188
64 Kwords
BC0000h–BCFFFFh
SA157
64 Kwords
9D0000h–9DFFFFh
SA189
64 Kwords
BD0000h–BDFFFFh
SA158
64 Kwords
9E0000h–9EFFFFh
SA190
64 Kwords
BE0000h–BEFFFFh
SA159
64 Kwords
9F0000h–9FFFFFh
SA191
64 Kwords
BF0000h–BFFFFFh
S29NS-N_00_A12 June 13, 2006
Bank 11
Bank 9
Bank 8
Bank 5
Bank
S29NS-N MirrorBit™ Flash Family
31
Da ta
Sheet
( Ad vanc e
I nfo r m at io n)
Table 9.5 Sector Address Table, S29NS256N (Sheet 3 of 3)
32
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
64 Kwords
C00000h–C0FFFFh
SA224
64 K words
E00000h–E0FFFFh
64 Kwords
C10000h–C1FFFFh
SA225
64 K words
E10000h–E1FFFFh
SA194
64 Kwords
C20000h–C2FFFFh
SA226
64 K words
E20000h–E2FFFFh
SA195
64 Kwords
C30000h–C3FFFFh
SA227
64 K words
E30000h–E3FFFFh
SA196
64 Kwords
C40000h–C4FFFFh
SA228
64 K words
E40000h–E4FFFFh
SA197
64 Kwords
C50000h–C5FFFFh
SA229
64 K words
E50000h–E5FFFFh
SA198
64 Kwords
C60000h–C6FFFFh
SA230
64 K words
E60000h–E6FFFFh
SA199
64 Kwords
C70000h–C7FFFFh
SA231
64 K words
E70000h–E7FFFFh
SA200
64 Kwords
C80000h–C8FFFFh
SA232
64 K words
E80000h–E8FFFFh
SA201
64 Kwords
C90000h–C9FFFFh
SA233
64 K words
E90000h–E9FFFFh
SA202
64 Kwords
CA0000h–CAFFFFh
SA234
64 K words
EA0000h–EAFFFFh
SA203
64 Kwords
CB0000h–CBFFFFh
SA235
64 K words
EB0000h–EBFFFFh
SA204
64 Kwords
CC0000h–CCFFFFh
SA236
64 K words
EC0000h–ECFFFFh
SA205
64 Kwords
CD0000h–CDFFFFh
SA237
64 K words
ED0000h–EDFFFFh
SA206
64 Kwords
CE0000h–CEFFFFh
SA238
64 K words
EE0000h–EEFFFFh
SA207
64 Kwords
CF0000h–CFFFFFh
SA239
64 K words
EF0000h–EFFFFFh
Bank 14
SA192
SA193
SA208
64 Kwords
D00000h–D0FFFFh
SA240
64 K words
F00000h–F0FFFFh
SA209
64 Kwords
D10000h–D1FFFFh
SA241
64 K words
F10000h–F1FFFFh
SA210
64 Kwords
D20000h–D2FFFFh
SA242
64 K words
F20000h–F2FFFFh
SA211
64 Kwords
D30000h–D3FFFFh
SA243
64 K words
F30000h–F3FFFFh
SA212
64 Kwords
D40000h–D4FFFFh
SA244
64 K words
F40000h–F4FFFFh
SA213
64 Kwords
D50000h–D5FFFFh
SA245
64 K words
F50000h–F5FFFFh
SA214
64 Kwords
D60000h–D6FFFFh
SA246
64 K words
F60000h–F6FFFFh
SA215
64 Kwords
D70000h–D7FFFFh
SA247
64 K words
F70000h–F7FFFFh
SA216
64 Kwords
D80000h–D8FFFFh
SA248
64 K words
F80000h–F8FFFFh
SA217
64 Kwords
D90000h–D9FFFFh
SA249
64 K words
F90000h–F9FFFFh
SA218
64 Kwords
DA0000h–DAFFFFh
SA250
64 K words
FA0000h–FAFFFFh
SA219
64 Kwords
DB0000h–DBFFFFh
SA251
64 K words
FB0000h–FBFFFFh
SA220
64 Kwords
DC0000h–DCFFFFh
SA252
64 K words
FC0000h–FCFFFFh
SA221
64 Kwords
DD0000h–DDFFFFh
SA253
64 K words
FD0000h–FDFFFFh
SA222
64 Kwords
DE0000h–DEFFFFh
SA254
64 K words
FE0000h–FEFFFFh
SA223
64 Kwords
DF0000h–DFFFFFh
SA255
16 K words
FF0000h–FF3FFFh
SA256
16 K words
FF4000h–FF7FFFh
SA257
16 K words
FF8000h–FFBFFFh
SA258
16 K words
FFC000h–FFFFFFh
Bank 15
Bank 13
Bank 12
Bank
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
She et
(Adva nce
In for ma ti on)
Table 9.6 Sector Address Table, S29NS128N (Sheet 1 of 2)
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
64 Kwords
000000h–00FFFFh
SA32
64 Kwords
200000h–20FFFFh
64 Kwords
010000h–01FFFFh
SA33
64 Kwords
210000h–21FFFFh
SA2
64 Kwords
020000h–02FFFFh
SA34
64 Kwords
220000h–22FFFFh
SA3
64 Kwords
030000h–03FFFFh
SA35
64 Kwords
230000h–23FFFFh
SA4
64 Kwords
040000h–04FFFFh
SA36
64 Kwords
240000h–24FFFFh
SA5
64 Kwords
050000h–05FFFFh
SA37
64 Kwords
250000h–25FFFFh
SA6
64 Kwords
060000h–06FFFFh
SA38
64 Kwords
260000h–26FFFFh
SA7
64 Kwords
070000h–07FFFFh
SA39
64 Kwords
270000h–27FFFFh
280000h–28FFFFh
Bank 4
SA0
SA1
64 Kwords
080000h–08FFFFh
SA40
64 Kwords
64 Kwords
090000h–09FFFFh
SA41
64 Kwords
290000h–29FFFFh
SA10
64 Kwords
0A0000h–0AFFFFh
SA42
64 Kwords
2A0000h–2AFFFFh
SA11
64 Kwords
0B0000h–0BFFFFh
SA43
64 Kwords
2B0000h–2BFFFFh
SA12
64 Kwords
0C0000h–0CFFFFh
SA44
64 Kwords
2C0000h–2CFFFFh
SA13
64 Kwords
0D0000h–0DFFFFh
SA45
64 Kwords
2D0000h–2DFFFFh
SA14
64 Kwords
0E0000h–0EFFFFh
SA46
64 Kwords
2E0000h–2EFFFFh
SA15
64 Kwords
0F0000h–0FFFFFh
SA47
64 Kwords
2F0000h–2FFFFFh
Bank 5
SA8
SA9
64 Kwords
100000h–10FFFFh
SA48
64 Kwords
300000h–30FFFFh
64 Kwords
110000h–11FFFFh
SA49
64 Kwords
310000h–31FFFFh
SA18
64 Kwords
120000h–12FFFFh
SA50
64 Kwords
320000h–32FFFFh
SA19
64 Kwords
130000h–13FFFFh
SA51
64 Kwords
330000h–33FFFFh
SA20
64 Kwords
140000h–14FFFFh
SA52
64 Kwords
340000h–34FFFFh
SA21
64 Kwords
150000h–15FFFFh
SA53
64 Kwords
350000h–35FFFFh
SA22
64 Kwords
160000h–16FFFFh
SA54
64 Kwords
360000h–36FFFFh
SA23
64 Kwords
170000h–17FFFFh
SA55
64 Kwords
370000h–37FFFFh
380000h–38FFFFh
Bank 6
SA16
SA17
64 Kwords
180000h–18FFFFh
SA56
64 Kwords
64 Kwords
190000h–19FFFFh
SA57
64 Kwords
390000h–39FFFFh
SA26
64 Kwords
1A0000h–1AFFFFh
SA58
64 Kwords
3A0000h–3AFFFFh
SA27
64 Kwords
1B0000h–1BFFFFh
SA59
64 Kwords
3B0000h–3BFFFFh
SA28
64 Kwords
1C0000h–1CFFFFh
SA60
64 Kwords
3C0000h–3CFFFFh
SA29
64 Kwords
1D0000h–1DFFFFh
SA61
64 Kwords
3D0000h–3DFFFFh
SA30
64 Kwords
1E0000h–1EFFFFh
SA62
64 Kwords
3E0000h–3EFFFFh
SA31
64 Kwords
1F0000h–1FFFFFh
SA63
64 Kwords
3F0000h–3FFFFFh
Bank 7
SA24
SA25
64 Kwords
400000h–40FFFFh
SA96
64 K words
600000h–60FFFFh
64 Kwords
410000h–41FFFFh
SA97
64 K words
610000h–61FFFFh
SA66
64 Kwords
420000h–42FFFFh
SA98
64 K words
620000h–62FFFFh
SA67
64 Kwords
430000h–43FFFFh
SA99
64 K words
630000h–63FFFFh
SA68
64 Kwords
440000h–44FFFFh
SA100
64 K words
640000h–64FFFFh
SA69
64 Kwords
450000h–45FFFFh
SA101
64 K words
650000h–65FFFFh
SA70
64 Kwords
460000h–46FFFFh
SA102
64 K words
660000h–66FFFFh
SA71
64 Kwords
470000h–47FFFFh
SA103
64 K words
670000h–67FFFFh
680000h–68FFFFh
Bank 12
SA64
SA65
SA72
64 Kwords
480000h–48FFFFh
SA104
64 K words
SA73
64 Kwords
490000h–49FFFFh
SA105
64 K words
690000h–69FFFFh
SA74
64 Kwords
4A0000h–4AFFFFh
SA106
64 K words
6A0000h–6AFFFFh
SA75
64 Kwords
4B0000h–4BFFFFh
SA107
64 K words
6B0000h–6BFFFFh
SA76
64 Kwords
4C0000h–4CFFFFh
SA108
64 K words
6C0000h–6CFFFFh
SA77
64 Kwords
4D0000h–4DFFFFh
SA109
64 K words
6D0000h–6DFFFFh
SA78
64 Kwords
4E0000h–4EFFFFh
SA110
64 K words
6E0000h–6EFFFFh
SA79
64 Kwords
4F0000h–4FFFFFh
SA111
64 K words
6F0000h–6FFFFFh
S29NS-N_00_A12 June 13, 2006
Bank 13
Bank 9
Bank 8
Bank 3
Bank 2
Bank 1
Bank 0
Bank
S29NS-N MirrorBit™ Flash Family
33
Da ta
Sheet
( Ad vanc e
I nfo r m at io n)
Table 9.6 Sector Address Table, S29NS128N (Sheet 2 of 2)
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
64 Kwords
500000h–50FFFFh
SA112
64 K words
700000h–70FFFFh
64 Kwords
510000h–51FFFFh
SA113
64 K words
710000h–71FFFFh
SA82
64 Kwords
520000h–52FFFFh
SA114
64 K words
720000h–72FFFFh
SA83
64 Kwords
530000h–53FFFFh
SA115
64 K words
730000h–73FFFFh
SA84
64 Kwords
540000h–54FFFFh
SA116
64 K words
740000h–74FFFFh
SA85
64 Kwords
550000h–55FFFFh
SA117
64 K words
750000h–75FFFFh
SA86
64 Kwords
560000h–56FFFFh
SA118
64 K words
760000h–76FFFFh
SA87
64 Kwords
570000h–57FFFFh
SA119
64 K words
770000h–77FFFFh
780000h–78FFFFh
Bank 14
SA80
SA81
SA88
64 Kwords
580000h–58FFFFh
SA120
64 K words
SA89
64 Kwords
590000h–59FFFFh
SA121
64 K words
790000h–79FFFFh
SA90
64 Kwords
5A0000h–5AFFFFh
SA122
64 K words
7A0000h–7AFFFFh
SA91
64 Kwords
5B0000h–5BFFFFh
SA123
64 K words
7B0000h–7BFFFFh
SA92
64 Kwords
5C0000h–5CFFFFh
SA124
64 K words
7C0000h–7CFFFFh
SA93
64 Kwords
5D0000h–5DFFFFh
SA125
64 K words
7D0000h–7DFFFFh
SA94
64 Kwords
5E0000h–5EFFFFh
SA126
64 K words
7E0000h–7EFFFFh
SA95
64 Kwords
5F0000h–5FFFFFh
SA127
16 K words
7F0000h–7F3FFFh
SA128
16 K words
7F4000h–7F7FFFh
SA129
16 K words
7F8000h–7FBFFFh
SA130
16 K words
7FC000h–7FFFFFh
Bank 15
Bank 11
Bank 10
Bank
Table 9.7 Sector Address Table, S29NS064N (Sheet 1 of 3)
34
Sector
Sector Size
Address Range
Bank
Sector
Sector Size
Address Range
SA0
32 Kwords
000000h-007FFFh
SA32
32 Kwords
100000h-107FFFh
SA1
32 Kwords
008000h-00FFFFh
SA33
32 Kwords
108000h-10FFFFh
SA2
32 Kwords
010000h-017FFFh
SA34
32 Kwords
110000h-117FFFh
SA3
32 Kwords
018000h-01FFFFh
SA35
32 Kwords
118000h-11FFFFh
SA4
32 Kwords
020000h-027FFFh
SA36
32 Kwords
120000h-127FFFh
SA5
32 Kwords
028000h-02FFFFh
SA37
32 Kwords
128000h-12FFFFh
SA6
32 Kwords
030000h-037FFFh
SA38
32 Kwords
130000h-137FFFh
SA7
32 Kwords
038000h-03FFFFh
SA39
32 Kwords
138000h-13FFFFh
Bank 2
Bank 0
Bank
SA8
32 Kwords
040000h-047FFFh
SA40
32 Kwords
140000h-147FFFh
SA9
32 Kwords
048000h-04FFFFh
SA41
32 Kwords
148000h-14FFFFh
SA10
32 Kwords
050000h-057FFFh
SA42
32 Kwords
150000h-157FFFh
SA11
32 Kwords
058000h-05FFFFh
SA43
32 Kwords
158000h-15FFFFh
SA12
32 Kwords
060000h-067FFFh
SA44
32 Kwords
160000h-167FFFh
SA13
32 Kwords
068000h-06FFFFh
SA45
32 Kwords
168000h-16FFFFh
SA14
32 Kwords
070000h-077FFFh
SA46
32 Kwords
170000h-177FFFh
SA15
32 Kwords
078000h-0F7FFFh
SA47
32 Kwords
178000h-17FFFFh
S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006
Data
She et
(Adva nce
In for ma ti on)
Table 9.7 Sector Address Table, S29NS064N (Sheet 2 of 3)
Sector Size
Address Range
SA16
32 Kwords
080000h-087FFFh
SA17
32 Kwords
088000h-08FFFFh
SA18
32 Kwords
090000h-097FFFh
SA19
32 Kwords
098000h-09FFFFh
SA20
32 Kwords
SA21
SA22
Sector
Sector Size
Address Range
SA48
32 Kwords
180000h-187FFFh
SA49
32 Kwords
188000h-18FFFFh
SA50
32 Kwords
190000h-197FFFh
SA51
32 Kwords
198000h-19FFFFh
0A0000h-0A7FFFh
SA52
32 Kwords
1A0000h-1A7FFFh
32 Kwords
0A8000h-0AFFFFh
SA53
32 Kwords
1A8000h-1AFFFFh
32 Kwords
0B0000h-0B7FFFh
SA54
32 Kwords
1B0000h-1B7FFFh
SA23
32 Kwords
0B8000h-0BFFFFh
SA55
32 Kwords
1B8000h-1BFFFFh
SA24
32 Kwords
0C0000h-0C7FFFh
SA56
32 Kwords
1C0000h-1C7FFFh
SA25
32 Kwords
0C8000h-0CFFFFh
SA57
32 Kwords
1C8000h-1CFFFFh
SA26
32 Kwords
0D0000h-0D7FFFh
SA58
32 Kwords
1D0000h-1D7FFFh
SA27
32 Kwords
0D8000h-0DFFFFh
SA59
32 Kwords
1D8000h-1DFFFFh
SA28
32 Kwords
0E0000h-0E7FFFh
SA60
32 Kwords
1E0000h-1E7FFFh
SA29
32 Kwords
0E8000h-0EFFFFh
SA61
32 Kwords
1E8000h-1EFFFFh
SA30
32 Kwords
0F0000h-0F7FFFh
SA62
32 Kwords
1F0000h-1F7FFFh
SA31
32 Kwords
0F8000h-0FFFFFh
SA63
32 Kwords
1F8000h-1FFFFFh
SA64
32 Kwords
200000h-207FFFh
SA96
32 Kwords
300000h-307FFFh
SA65
32 Kwords
208000h-20FFFFh
SA97
32 Kwords
308000h-30FFFFh
SA66
32 Kwords
210000h-217FFFh
SA98
32 Kwords
310000h-317FFFh
SA67
32 Kwords
218000h-21FFFFh
SA99
32 Kwords
318000h-31FFFFh
SA68
32 Kwords
220000h-227FFFh
SA100
32 Kwords
320000h-327FFFh
SA69
32 Kwords
228000h-22FFFFh
SA101
32 Kwords
328000h-32FFFFh
SA70
32 Kwords
230000h-237FFFh
SA102
32 Kwords
330000h-337FFFh
SA71
32 Kwords
238000h-23FFFFh
SA103
32 Kwords
338000h-33FFFFh
SA72
32 Kwords
240000h-247FFFh
SA104
32 Kwords
340000h-347FFFh
SA73
32 Kwords
248000h-24FFFFh
SA105
32 Kwords
348000h-34FFFFh
SA74
32 Kwords
250000h-257FFFh
SA106
32 Kwords
350000h-357FFFh
SA75
32 Kwords
258000h-25FFFFh
SA107
32 Kwords
358000h-35FFFFh
SA76
32 Kwords
260000h-267FFFh
SA108
32 Kwords
360000h-367FFFh
SA77
32 Kwords
268000h-26FFFFh
SA109
32 Kwords
368000h-36FFFFh
SA78
32 Kwords
270000h-277FFFh
SA110
32 Kwords
370000h-377FFFh
SA79
32 Kwords
278000h-2F7FFFh
SA111
32 Kwords
378000h-37FFFFh
S29NS-N_00_A12 June 13, 2006
Bank
Bank 3
Sector
Bank 6
Bank 4
Bank 1
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Table 9.7 Sector Address Table, S29NS064N (Sheet 3 of 3)
Sector
Sector Size
Address Range
SA80
32 Kwords
280000h-287FFFh
SA81
32 Kwords
SA82
32 Kwords
SA83
Bank
Sector
Sector Size
Address Range
SA112
32 Kwords
380000h-387FFFh
288000h-28FFFFh
SA113
32 Kwords
388000h-38FFFFh
290000h-297FFFh
SA114
32 Kwords
390000h-397FFFh
32 Kwords
298000h-29FFFFh
SA115
32 Kwords
398000h-39FFFFh
SA84
32 Kwords
2A0000h-2A7FFFh
SA116
32 Kwords
3A0000h-3A7FFFh
SA85
32 Kwords
2A8000h-2AFFFFh
SA117
32 Kwords
3A8000h-3AFFFFh
SA86
32 Kwords
2B0000h-2B7FFFh
SA118
32 Kwords
3B0000h-3B7FFFh
SA87
32 Kwords
2B8000h-2BFFFFh
SA119
32 Kwords
3B8000h-3BFFFFh
SA88
32 Kwords
2C0000h-2C7FFFh
SA120
32 Kwords
3C0000h-3C7FFFh
SA89
32 Kwords
2C8000h-2CFFFFh
SA121
32 Kwords
3C8000h-3CFFFFh
SA90
32 Kwords
2D0000h-2D7FFFh
SA122
32 Kwords
3D0000h-3D7FFFh
SA91
32 Kwords
2D8000h-2DFFFFh
SA123
32 Kwords
3D8000h-3DFFFFh
SA92
32 Kwords
2E0000h-2E7FFFh
SA124
32 Kwords
3E0000h-3E7FFFh
SA93
32 Kwords
2E8000h-2EFFFFh
SA125
32 Kwords
3E8000h-3EFFFFh
SA94
32 Kwords
2F0000h-2F7FFFh
SA126
32 Kwords
3F0000h-3F7FFFh
SA95
32 Kwords
2F8000h-2FFFFFh
SA127
8 Kwords
3F8000h-3F9FFFh
SA128
8 Kwords
3FA000h-3FBFFFh
SA129
8 Kwords
3FC000h-3FDFFFh
SA130
8 Kwords
3FE000h-3FFFFFh
Bank 7
Bank 5
Bank
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 11.4 on page 52 defines the valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the rising edge of AVD#. All data is latched on the rising edge of WE#. Refer to
the AC Characteristics section for timing diagrams.
10.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data in asynchronous mode. Each bank is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspendread mode, after which the system can read data from any non-erase-suspended sector. After completing a
programming operation in the Erase Suspend mode, the system may once again read array data with the
same exception. See Erase Suspend/Erase Resume Commands on page 46 for more information.
After the device accepts a Program Suspend command, the corresponding bank enters the programsuspend-read mode, after which the system can read data from any non-program-suspended sector within
the same bank.
The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode.
See also VersatileIO™ (VIO) Control on page 14 and Requirements for Synchronous (Burst)
Read Operation on page 15 in the Device Bus Operations section for more information. The Asynchronous
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Read and Synchronous/Burst Read tables provide the read parameters, and Figure 19.3 on page 66 and
Figure 19.4 on page 67 show the timings.
10.2
Set Configuration Register Command Sequence
The device uses a configuration register to set the various burst parameters: number of wait states, burst
read mode, RDY configuration, and synchronous mode active. The configuration register must be set before
the device will enter burst mode.
The configuration register is loaded with a four-cycle command sequence. The first two cycles are standard
unlock sequences. On the third cycle, the data should be D0h and address bits should be 555h. During the
fourth cycle, the configuration code should be entered onto the data bus with the address bus set to address
000h. Once the data has been programmed into the configuration register, a software reset command is
required to set the device into the correct state. The device will power up or after a hardware reset with the
default setting, which is in asynchronous mode. The register must be set before the device can enter
synchronous mode. The configuration register can not be changed during device operations (program, erase,
or sector lock).
10.3
Read Configuration Register Command Sequence
The configuration register can be read with a four-cycle command sequence. The first two cycles are
standard unlock sequences. On the third cycle, the data should be C6h and address bits should be 555h.
During the fourth cycle, the configuration code should be read out of the data bus with the address bus set to
address 000h. Once the data has been read from the configuration register, a software reset command is
required to set the device into the correct set mode.
10.3.1
Read Mode Setting
On power-up or hardware reset, the device is set to be in asynchronous read mode. This setting allows the
system to enable or disable burst mode during system operations.
10.3.2
Programmable Wait State Configuration
The programmable wait state feature informs the device of the number of clock cycles that must elapse after
AVD# is driven active before data will be available. This value is determined by the input frequency of the
device. Configuration Bit CR13–CR11 determine the setting (see Table 10.1).
The wait state command sequence instructs the device to set a particular number of clock cycles for the initial
access in burst mode. The number of wait states that should be programmed into the device is directly related
to the clock frequency.
Table 10.1 Programmable Wait State Settings
CR13
CR12
CR11
Total Initial Access Cycles
0
0
0
2
0
0
1
3
0
1
0
4
0
1
1
5
1
0
0
6
1
0
1
7 (default)
1
1
0
Reserved
1
1
1
Reserved
Notes
1. Upon power-up or hardware reset, the default setting is seven wait states.
2. RDY will default to being active with data when the Wait State Setting is set to a total initial access cycle of 2.
It is recommended that the wait state command sequence be written, even if the default wait state value is
desired, to ensure the device is set as expected. A hardware reset will set the wait state to the default setting.
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Programmable Wait State
The host system should set CR13-CR11 to 101/100/011 for a clock frequency of 80/66 MHz for the system/
device to execute at maximum speed.
Table 10.2 describes the typical number of clock cycles (wait states) for various conditions.
Table 10.2 Wait States for Handshaking
Typical No. of Clock Cycles after AVD# Low
Conditions at Address
Initial address (VCCQ = 1.8 V)
10.3.4
80 MHz
66 MHz
7
6
Handshaking
For optimal burst mode performance, the host system must set the appropriate number of wait states in the
flash device depending on the clock frequency.
The autoselect function allows the host system to determine whether the flash device is enabled for
handshaking.
10.3.5
Burst Length Configuration
The device supports four different read modes: continuous mode, and 8, 16, and 32 word linear with or
without wrap around modes. A continuous sequence (default) begins at the starting address and advances
the address pointer until the burst operation is complete. If the highest address in the device is reached
during the continuous burst read mode, the address pointer wraps around to the lowest address.
For example, an eight-word linear read with wrap around begins on the starting address written to the device
and then advances to the next 8 word boundary. The address pointer then returns to the 1st word after the
previous eight word boundary, wrapping through the starting location. The sixteen- and thirty-two linear wrap
around modes operate in a fashion similar to the eight-word mode.
Table 10.3 shows the CR2-CR0 and settings for the four read modes.
Table 10.3 Burst Length Configuration
Address Bits
CR2
CR1
CR0
Continuous
Burst Modes
0
0
0
8-word linear
0
1
0
16-word linear
0
1
1
32-word linear
1
0
0
Notes
1. Upon power-up or hardware reset the default setting is continuous.
2. All other conditions are reserved.
10.3.6
Burst Wrap Around
By default, the device will perform burst wrap around with CR3 set to a ‘1’. Changing the CR3 to a ‘0’ disables
burst wrap around.
10.3.7
RDY Configuration
By default, the device is set so that the RDY pin will output VOH whenever there is valid data on the outputs.
The device can be set so that RDY goes active one data cycle before active data. CR8 determines this
setting; “1” for RDY active (default) with data, “0” for RDY active one clock cycle before valid data.
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10.3.8
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RDY Polarity
By default, the RDY pin will always indicate that the device is ready to handle a new transaction with CR10
set to a ‘1’. In this case, the RDY pin is active high. Changing the CR10 to a ‘0’ sets the RDY pin to be active
low. In this case, the RDY pin will always indicate that the device is ready to handle a new transaction when
low.
11. Configuration Register
Table 11.1 shows the address bits that determine the configuration register settings for various device
functions.
Table 11.1 Configuration Register
CR BIt
Function
CR15
Reserved
0 = Default
CR14
Reserved
0 = Default
CR13
CR12
Programmable
Wait State
CR11
CR10
RDY Polarity
CR9
Reserved
Settings (Binary)
000 = Data is valid on the 2nd active CLK edge after AVD# transition to VIH
001 = Data is valid on the 3rd active CLK edge after AVD# transition to VIH
010 = Data is valid on the 4th active CLK edge after AVD# transition to VIH
011 = Data is valid on the 5th active CLK edge after AVD# transition to VIH
100 = Data is valid on the 6th active CLK edge after AVD# transition to VIH
101 = Data is valid on the 7th active CLK edge after AVD# transition to VIH (default)
110 = Reserved
111 = Reserved
0 = RDY signal is active low
1 = RDY signal is active high (default)
1 = Default
0 = RDY active one clock cycle before data
1 = RDY active with data (default)
CR8
RDY
CR7
Reserved
1 = default
CR6
Reserved
1 = default
CR5
Reserved
0 = default
CR4
Reserved
0 = default
CR3
Burst Wrap Around
CR2
CR1
CR0
Burst Length
0 = No Wrap Around Burst
1 = Wrap Around Burst (default)
000 = Continuous (default)
010 = 8-Word Linear Burst
011 = 16-Word Linear Burst
100 = 32-Word Linear Burst
(All other bit settings are reserved)
Notes
1. Device will be in the default state upon power-up or hardware reset.
2. CR3 will always equal to 1 (Wrap around mode) when CR0,CR1,CR2 = 000 (continuous Burst mode).
3. A software reset command is required after a read or write command.
11.1
Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure
begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the bank to which the system was writing to the read mode. If the program
command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command
returns that bank to the erase-suspend-read mode. Once programming begins, however, the device
ignores reset commands until the operation is complete.
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The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank was in Erase Suspend).
Note: If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to
Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard RESET
command will not work. See Table 11.4 on page 52 for details on this command sequence.
11.2
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes,
and determine whether or not a sector is protected. Table 11.4 on page 52 shows the address and data
requirements. The autoselect command sequence may be written to an address within a bank that is either in
the read or erase-suspend-read mode. The autoselect command may not be written while the device is
actively programming or erasing in the other bank. Autoselect does not support simultaneous operations or
burst mode.
Table 11.2 Device ID
Read Data
Description
Address
256N
128N
064N
(BA) + 00h
0001h
0001h
0001h
Device ID, Word 1
(BA) + 01h
2D7E
2C7Eh
2B7Eh
Device ID, Word 2
(BA) + 0Eh
2D2F
2C35h
2B33h
Device ID, Word 3
(BA) + 0Fh
2D00
2C00h
2B00h
Revision ID
(BA) + 03h
TBD
Sector Block
Lock/Unlock
(SA) = 02h
0001 - Locked
0000 - Unlocked
Manufacturer ID
Indicator Bits
(BA) + 07h
DQ15 - DQ8 = Reserved
DQ7 - Factory Lock Bit
1 = Locked, 0 = Not Locked
DQ6 - Customer Lock Bit
1 = Locked, 0 = Not Locked
DQ5 Handshake Bit
1 = Reserved
0 = Standard Handshake
DQ4 & DQ3 - WP# Protections Boot Code
01 = WP# Protects only the Top Boot Sectors
DQ2-DQ0 = Reserved
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect
mode. The system may read at any address within the same bank any number of times without initiating
another autoselect command sequence. The following table describes the address requirements for the
various autoselect functions, and the resulting data. BA represents the bank address. The device ID is read in
three cycles. During this time, other banks are still available to read the data from the memory.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
11.3
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, eight word electronic
serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle
Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon
Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit
Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon
Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
Table 11.4 on page 52 shows the address and data requirements for both command sequences.
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11.3.1
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Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program faster than the standard program command
sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock
bypass mode.
During the unlock bypass mode only the command is valid. To exit the unlock bypass mode, the system must
issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address
and the data 90h. The second cycle need only contain the data 00h. The bank then returns to the read mode.
11.4
Program Command Sequence
11.4.1
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies the
programmed cell margin. Table 11.4 on page 52 shows the address and data requirements for the program
command sequence.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses
are no longer latched. The system can determine the status of the program operation by monitoring DQ7 or
DQ6/DQ2. Refer to the Write Operation Status on page 55 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program operation. The program command sequence should be
reinitiated once that bank has returned to the read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from
“0” back to a “1.” Attempting to do so may causes that bank to set DQ5 = 1 (change-up condition). However,
a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.”
11.4.2
Program Command Sequence (Unlock Bypass Mode)
Once the device enters the unlock bypass mode, then a two-cycle unlock bypass program command
sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock
bypass program command, A0h; the second cycle contains the program address and data. Additional data is
programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the
standard program command sequence, resulting in faster total programming time. Table 11.4 on page 52
shows the requirements for the unlock bypass command sequences.
11.5
Accelerated Program
The device offers accelerated program operations through the ACC input. When the system asserts ACC on
this input, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle
Unlock Bypass program command sequence. The device uses the higher voltage on the ACC input to
accelerate the operation.
Figure 11.1 illustrates the algorithm for the program operation. Refer to Table 19.5, Erase/Program
Operations on page 69 and Figure 19.6 on page 70 for timing diagrams.
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Figure 11.1 Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note
See Table 11.4 on page 52 for program.
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Write Buffer Programming Command Sequence
Write Buffer Programming Sequence allows for faster programming as compared to the standard Program
Command Sequence. See Table 11.3 on page 43 for the program command sequence.
Table 11.3 Write Buffer Command Sequence
Sequence
Address
Data
Unlock Command 1
555
00AA
Not required in the Unlock Bypass mode
Unlock Command 2
2AA
0055
Same as above
Write Buffer Load
Starting
Address
0025h
Specify the Number of Program Locations
Starting
Address
Word Count
Load 1st data word
Starting
Address
Program
Data
All addresses must be within write-buffer-page
boundaries, but do not have to be loaded in any order
Load next data word
Write Buffer
Location
Program
Data
Same as above
...
Load last data word
Write Buffer Program Confirm
Comment
Number of locations to program minus 1
...
...
Same as above
Write Buffer
Location
Program
Data
Same as above
Sector Address
0029h
This command must follow the last write buffer
location loaded, or the operation will ABORT
Device goes busy
Status monitoring through DQ pins (Perform Data
Bar Polling on the Last Loaded Address)
Note
Write buffer addresses must be loaded in sequential order.
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Figure 11.2 Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Abort Write to
Buffer Operation?
Write to a different
sector address
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Read DQ15 - DQ0 at
Last Loaded Address
DQ7 = Data?
No
Yes
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
Read DQ15 - DQ0 with
address = Last Loaded
Address
DQ7 = Data?
Yes
No
FAIL or ABORT
11.7
PASS
Chip Erase Command Sequence
11.7.1
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 11.4 on page 52 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer
to Write Operation Status on page 55 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array data, to ensure data integrity.
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Sector Erase Command Sequence
11.8.1
Sector Erase Command Sequence
Sector erase in normal mode is a six bus cycle operation. The sector erase command sequence is initiated by
writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are
then followed by the address of the sector to be erased, and the sector erase command. Table 11.4 on page
52 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than tSEA, sector erase accept,
occurs. During the time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one
sector to all sectors. The time between these additional cycles must be less than tSEA. Any sector erase
address and command following the exceeded time-out may or may not be accepted. Any command other
than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase start timeout state indicator.). The time-out begins from the rising edge of the final WE# pulse in
the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data
from the non-erasing banks. The system can determine the status of the erase operation by reading DQ7 or
DQ6/ DQ2 in the erasing bank. Refer to Write Operation Status on page 55 for information on these status
bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that bank has returned to reading array data,
to ensure data integrity.
11.8.2
Accelerated Sector Erase
The device offers accelerated sector erase operation through the ACC function. This method of erasing
sectors is faster than the standard sector erase command sequence. The accelerated sector erase
function must not be used more than 100 times per sector. In addition, accelerated sector erase should
be performed at room temperature (30°C +-10°C).
The following procedure is used to perform accelerated sector erase:
1. Sectors to be erased must be PPB and DYB cleared. All sectors that remain locked will not be
erased.
2. Apply 9V to the ACC input. This voltage must be applied at least 1 µs before executing step 3
3. Issue the standard chip erase command.
4. Monitor status bits DQ2/DQ6 or DQ7 to determine when erasure is complete, just as in the
standard erase operation. See Write Operation Status on page 55 for further details.
5. Lower ACC from 9V to VCC.
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Figure 11.3 Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Note
See the section on DQ3 for information on the sector erase start timeout state indicator.
11.9
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, program data to, any sector not selected for erasure. The system may also lock or unlock any
sector while the erase operation is suspended. The system must not write the sector lock/unlock
command to sectors selected for erasure. The bank address is required when writing this command. This
command is valid only during the sector erase operation, including the minimum tSEA time-out period during
the sector erase command sequence. The Erase Suspend command is ignored if written during the chip
erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of tESL, erase suspend latency, to suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase time-out, the device immediately terminates the
time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) The system may also lock or unlock any sector while in the erase-suspend-read
mode. Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0.
The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erasesuspended. Refer to Write Operation Status on page 55 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode.
The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. Refer to Write Operation Status on page 55 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the
Autoselect Functions and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank
address of the erase-suspended bank is required when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Note: While an erase operation can be suspended and resumed multiple times, a minimum delay of tERS
(Erase Resume to Erase Suspend) is required from resume to the next suspend.
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11.10 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt a embedded programming operation or a
“Write to Buffer” programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within tPSL, program suspend latency, and updates the status bits. Addresses are defined when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming operation
while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or
Program Suspend. If a read is needed from the Secured Silicon Sector area (One Time Program area), then
user must use the proper command sequences to enter and exit this region.
The system may also write the autoselect command sequence when the device is in Program Suspend
mode. The device allows reading autoselect codes in the suspended sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to Program Suspend
mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don’t care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resume programming.
Note: While a program operation can be suspended and resumed multiple times, a minimum delay of tPRS
(Program Resume to Program Suspend) is required from resume to the next suspend.
11.11 Lock Register Command Set Definitions
The Lock Register Command Set permits the user to one-time program the Persistent Protection Mode Lock
Bit or Password Protection Mode Lock Bit. The Lock Command Set also allows for the reading of the
Persistent Protection Mode Lock Bit or Password Protection Mode Lock Bit.
The Lock Register Command Set Entry command sequence must be issued prior to any of the commands
listed following to enable proper command execution.
Note that issuing the Lock Register Command Set Entry command disables reads and writes for Bank 0.
Reads from other banks excluding Bank 0 are allowed.
„ Lock Register Program Command
„ Lock Register Read Command
„ Lock Register Exit Command
The Lock Register Command Set Exit command must be issued after the execution of the commands to
reset the device to read mode, and re-enables reads and writes for Bank 0.
For the device to be permanently set to the Persistent Protection Mode or the Password Protection Mode, the
sequence of a Lock Register Command Set Exit command, must be initiated after issuing the Persistent
Protection Mode Lock Bit Program and the Password Protection Mode Lock Bit Program commands.
Note that if the Persistent Protection Mode Lock Bit and the Password Protection Mode Lock Bit are
programmed at the same time, neither will be programmed.
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11.12 Password Protection Command Set Definitions
The Password Protection Command Set permits the user to program the 64-bit password, verify the
programming of the 64-bit password, and then later unlock the device by issuing the valid 64-bit password.
The Password Protection Command Set Entry command sequence must be issued prior to any of the
commands listed following to enable proper command execution.
Note that issuing the Password Protection Command Set Entry command disables reads and writes for Bank
0. Reads for other banks excluding Bank 0 are allowed. However Writes to any bank are not allowed.
„ Password Program Command
„ Password Read Command
„ Password Unlock Command
The Password Program Command permits programming the password that is used as part of the hardware
protection scheme. The actual password is 64-bits long. There is no special addressing order required for
programming the password.
Once the Password is written and verified, the Password Mode Locking Bit must be set in order to prevent
verification. The Password Program Command is only capable of programming “0”s. Programming a “1” after
a cell is programmed as a “0” results in a time-out by the Embedded Program Algorithm with the cell
remaining as a “0”. The password is all 1’s when shipped from the factory. All 64-bit password combinations
are valid as a password.
The Password Verify Command is used to verify the Password. The Password is verifiable only when the
Password Mode Lock Bit is not programmed. If the Password Mode Lock Bit is programmed and the user
attempts to verify the Password, the device will always drive all 1’s onto the DQ data bus.
The lower two address bits (A1–A0) are valid during the Password Read, Password Program, and Password
Unlock.
The Password Unlock command is used to clear the PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become accessible for modification. The exact password must be
entered in order for the unlocking function to occur. This command cannot be issued any faster than 1 µs at a
time to prevent a hacker from running through the all 64-bit combinations in an attempt to correctly match a
password. If the command is issued before the 1 µs execution window for each portion of the unlock, the
command will be ignored.
The Password Unlock function is accomplished by writing Password Unlock command and data to the device
to perform the clearing of the PPB Lock Bit. The password is 64 bits long. A1 and A0 are used for matching.
Writing the Password Unlock command does not need to be address order specific. An example sequence is
starting with the lower address A1–A0= 00, followed by A1–A0= 01, A1–A0= 10, and A1–A0= 11.
Approximately 1 µs is required for unlocking the device after the valid 64-bit password is given to the device.
It is the responsibility of the microprocessor to keep track of the entering the portions of the 64-bit password
with the Password Unlock command, the order, and when to read the PPB Lock bit to confirm successful
password unlock. In order to re-lock the device into the Password Mode, the PPB Lock Bit Set command can
be re-issued.
The Password Protection Command Set Exit command must be issued after the execution of the
commands listed previously to reset the device to read mode, otherwise the device will hang. Note that
issuing the Password Protection Command Set Exit command re-enables reads and writes for Bank 0.
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11.13 Non-Volatile Sector Protection Command Set Definitions
The Non-Volatile Sector Protection Command Set permits the user to program the Persistent Protection Bits
(PPBs), erase all of the Persistent Protection Bits (PPBs), and read the logic state of the Persistent Protection
Bits (PPBs).
The Non-Volatile Sector Protection Command Set Entry command sequence must be issued prior to any
of the commands listed following to enable proper command execution.
Note that issuing the Non-Volatile Sector Protection Command Set Entry command disables reads and
writes for Active Bank. Reads from other banks excluding Active Bank are allowed.
„ PPB Program Command
„ All PPB Erase Command
„ PPB Status Read Command
The PPB Program command is used to program, or set, a given PPB. Each PPB is individually programmed
(but is bulk erased with the other PPBs). The specific sector addresses (AMAX–A14) are written at the same
time as the program command. If the PPB Lock Bit is set, the PPB Program command will not execute and
the command will time-out without programming the PPB.
The All PPB Erase command is used to erase all PPBs in bulk. There is no means for individually erasing a
specific PPB. Unlike the PPB program, no specific sector address is required. However, when the PPB erase
command is written, all Sector PPBs are erased in parallel. If the PPB Lock Bit is set the ALL PPB Erase
command will not execute and the command will time-out without erasing the PPBs.
The device will preprogram all PPBs prior to erasing when issuing the All PPB Erase command. Also note
that the total number of PPB program/erase cycles has the same endurance as the flash memory array.
The programming state of the PPB for a given sector can be verified by writing a PPB Status Read Command
to the device. See Table 11.4 on page 50 for the PPB program/erase algorithm.
Note: PPB reads data only asynchronously.
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Figure 11.4 PPB Program/Erase Algorithm
Enter PPB
Command Set.
Addr = BA
Program PPB Bit.
Addr = SA
Read Byte.
Addr = SA0
Read Byte.
Addr = SA0
No
DQ6 =
Toggle?
Yes
DQ5 = 1?
Yes
Read Byte Twice.
Addr = SA0
DQ6 =
Toggle?
No
Read Byte.
Addr = SA
Yes
No
DQ0 =
'1' (Erase)
'0' (Pgm.)?
FAIL
Yes
Issue Reset
Command
PASS
Exit PPB
Command Set
Note
The bank entered during entry is the active bank. Take for example the active bank is BA0. Any reads in BA0 will result in status reads of the
PPB bit. If the user wants to set (programmed to “0”) in a different bank other than the active bank, say for example BA5, then the active bank
switches from BA0 to BA5. Reading in BA5 will result in status read of the bit whereas reading in BA0 will result in true data.
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The Non-Volatile Sector Protection Command Set Exit command must be issued after the execution of
the commands listed previously to reset the device to read mode. Note that issuing the Non-Volatile Sector
Protection Command Set Exit command re-enables reads and writes for Active Bank.
After entering the PPB Mode
„ The PPB Status Read (BA) is the Mode entry (BA)
„ If PPB Program command is given, the new PPB Status Read (BA) will be the same (BA) as given in the
PPB Program.
„ If PPB Erase command is given, the new PPB Status Read (BA) is the same (BA) as given in the PPB
Program or PPB Set Entry, whichever was last.
„ During PPB Program or Erase Operation, PPB status read is not available. Only polling data is available in
Bank0 and no other bank. Reading from all other banks will give core data.
11.14 Global Volatile Sector Protection Freeze Command Set
The Global Volatile Sector Protection Freeze Command Set permits the user to set the PPB Lock Bit and
reading the logic state of the PPB Lock Bit.
The Volatile Sector Protection Freeze Command Set Entry command sequence must be issued prior to
any of the commands listed following to enable proper command execution.
Reads from all banks excluding mode entry bank are allowed.
„ PPB Lock Bit Set Command
„ PPB Lock Bit Status Read Command
The PPB Lock Bit Set command is used to set the PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command. Once the
PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear (for Persistent
Sector Protection Mode) or the Password Unlock command is executed (for Password Sector Protection
Mode). If the Password Mode Locking Bit is set, the PPB Lock Bit status is reflected as set, even after a
power-on reset cycle.
The programming state of the PPB Lock Bit can be verified by executing a PPB Lock Bit Status Read
Command to the device.
The Global Volatile Sector Protection Freeze Command Set Exit command must be issued after the
execution of the commands listed previously to reset the device to read mode.
11.15 Volatile Sector Protection Command Set
The Volatile Sector Protection Command Set permits the user to set the Dynamic Protection Bit (DYB), clear
the Dynamic Protection Bit (DYB), and read the logic state of the Dynamic Protection Bit (DYB).
The Volatile Sector Protection Command Set Entry command sequence must be issued prior to any of the
commands listed following to enable proper command execution.
Note that issuing the Volatile Sector Protection Command Set Entry command disables reads and writes
for the bank selected with the command. Reads for other banks excluding the selected bank are allowed.
„ DYB Set Command
„ DYB Clear Command
„ DYB Status Read Command
The DYB Set/Clear command is used to set or clear a DYB for a given sector. The high order address bits
(A23–A14 for the NS256N, A22–A14 for the NS128N and A21-A14 for the NS064N) are issued at the same
time as the code 00h or 01h on DQ7-DQ0. All other DQ data bus pins are ignored during the data write cycle.
The DYBs are modifiable at any time, regardless of the state of the PPB or PPB Lock Bit. The DYBs are set
at power-up or hardware reset.
The programming state of the DYB for a given sector can be verified by writing a DYB Status Read Command
to the device.
Note that DYB reads data only asynchronously.
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Note: The bank entered during entry is the active bank. Take for example the active bank is BA0. Any reads
in BA0 will result in status reads of the DYB bit. If the user wants to set (programmed to “0”) in a different bank
other than the active bank, say for example BA5, then the active bank switches from BA0 to BA5. Reading in
BA5 will result in status read of the bit whereas reading in BA0 will result in true data.
The Volatile Sector Protection Command Set Exit command must be issued after the execution of the
commands listed previously to reset the device to read mode.
Note that issuing the Volatile Sector Protection Command Set Exit command re-enables reads and writes
for the bank selected.
Table 11.4 Command Definitions (Sheet 1 of 3)
Command Sequence
(Notes)
Cycles
Bus Cycles (Notes 1–6)
First
Second
Addr
Data
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
(BA)
X0E
(Note
10)
(BA)
X0F
(Note
10)
1
RA
RD
Reset (8)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X00
0001
Device ID
6
555
AA
2AA
55
(BA)
555
90
(BA)
X01
(Note
10)
Indicator Bits (11)
4
555
AA
2AA
55
(BA)
555
90
(BA)
X0D
(Note
11)
Revision ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X03
Mode Entry
3
555
AA
2AA
55
555
20
Program (12)
2
XXX
A0
PA
PD
Reset (13)
2
BA
90
XXX
00
CFI
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (17)
6
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (20)
3
555
AA
2AA
55
555
F0
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend / Program Suspend
(14)
1
BA
B0
Erase Resume / Program Resume
(15)
1
BA
30
Set Config. Register (28)
4
555
AA
2AA
55
555
D0
X00
CR
Read Configuration Register
4
555
AA
2AA
55
555
C6
X00
CR
Unlock Bypass
Autoselect (9)
Asynchronous Read (7)
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Table 11.4 Command Definitions (Sheet 2 of 3)
Command Sequence
(Notes)
Cycles
Bus Cycles (Notes 1–6)
First
Addr
Second
Third
Fourth
Data
Addr
Data
Addr
Data
555
40
555
60
Addr
Data
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
Addr
Data
02
PWD2
03
PWD3
00
29
Lock
Lock Register Command Set Definitions
Lock Register Command
Set Entry
3
555
AA
2AA
55
Lock Register Bits Program
(23)
2
XX
A0
00
data
Lock Register Bits Read
1
(BA0)
00
data
Lock Register Command
Set Exit (24)
2
XX
90
XX
00
AA
2AA
55
PWD0
/
PWD1
/
PWD2
/
PWD3
Password Protection Command Set Definitions
Pass-word
Password Protection
Command Set Entry
3
555
Password Program (24, 26)
2
XX
A0
00/
01/
02/
03
Password Read
(27)
4
00
PWD 0
01
PWD1
02
PWD2
03
PWD3
Password Unlock
(26)
7
00
25
00
03
00
PWD0
01
PWD1
Password Protection
Command Set Exit
2
XX
90
XX
00
(BA)
555
C0
(BA)
555
50
PPB
Non-Volatile Sector Protection Command Set Definitions
Non-Volatile Sector
Protection Command Set
Entry
3
555
AA
2AA
55
PPB Program (29)
2
XX
A0
(BA)
SA
00
All PPB Erase (19, 29)
2
XX
80
SA0
30
PPB Status Read
1
(BA)
SA
RD (0)
Non-Volatile Sector
Protection Command Set
Exit
2
XX
90
XX
00
PPB Lock Bit
Global Volatile Sector Protection Command Set Definitions
Global Volatile Sector
Protection Freeze
Command Set Entry
3
555
AA
2AA
55
PPB Lock Bit Set
2
XX
A0
XX
00
PPB Lock Bit Status Read
1
(BA)X
X
RD (0)
Global Volatile Sector
Protection Freeze
Command Set Exit
2
XX
90
XX
00
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Table 11.4 Command Definitions (Sheet 3 of 3)
Command Sequence
(Notes)
Cycles
Bus Cycles (Notes 1–6)
First
Addr
Second
Third
Fourth
Data
Addr
Data
Addr
Data
555
88
Addr
Data
XX
00
Fifth
Addr
Sixth
Data
Addr
Data
Seventh
Addr
Data
Secured Silicon Sector
Secured Silicon Sector Command Definitions
Secured Silicon Sector
Entry (21)
3
555
AA
2AA
55
Secured Silicon Sector
Program
2
XX
A0
00
data
Secured Silicon Sector
Read
1
00
data
Secured Silicon Sector Exit
(24)
4
555
AA
2AA
55
555
90
(BA)
555
E0
DYB
Volatile Sector Protection Command Set Definitions
Volatile Sector Protection
Command Set Entry (21)
3
555
AA
2AA
55
DYB Set
2
XX
A0
(BA)
SA
00
DYB Clear
2
XX
A0
(BA)
SA
01
DYB Status Read
1
(BA)
SA
RD(0)
Volatile Sector Protection
Command Set Exit (24)
2
XX
90
XX
00
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
PD(0) = Secured Silicon Sector Lock Bit. PD(0), or bit[0].
PD(1) = Persistent Protection Mode Lock Bit. PD(1), or bit[1], must be set to ‘0’ for protection while PD(2), bit[2] must be left as ‘1’.
PD(2) = Password Protection Mode Lock Bit. PD(2), or bit[2], must be set to ‘0’ for protection while PD(1), bit[1] must be left as ‘1’.
PD(3) = Protection Mode OTP Bit. PD(3) or bit[3].
SA = Address of the sector to be verified (in autoselect mode) or erased. SA includes BA. Address bits Amax–A14 uniquely select any sector (NS256N and NS128N),
and address bits Amax - A13 uniquely select any sector (NS064N).
BA = Address of the bank (A23–A20 for S29NS256N, A22–A19 for S29NS128N), and A21-A19 for S29NS064N, that is being switched to autoselect mode, is in
bypass mode, or is being erased.
CR = Configuration Register set by data bits D15-D0.
PWD3–PWD0 = Password Data. PD3–PD0 present four 16 bit combinations that represent the 64-bit Password
PWA = Password Address. Address bits A1 and A0 are used to select each 16-bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0, if unprotected, DQ0 = 1.
RD(1) = DQ1 protection indicator bit. If protected, DQ1 = 0, if unprotected, DQ1 = 1.
RD(2) = DQ2 protection indicator bit. If protected, DQ2 = 0, if unprotected, DQ2 = 1.
RD(4) = DQ4 protection indicator bit. If protected, DQ4 = 0, if unprotected, DQ4 = 1.
WBL = Write Buffer Location. Address must be within the same write buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes
1. See Table 8.1 on page 14 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD.
5. Unless otherwise noted, address bits Amax–A12 are don’t cares.
6. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset
command to return the device to reading array data.
7. No unlock or command cycles required when bank is reading array data.
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8. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the
autoselect mode, or if DQ5 goes high (while the bank is providing status information).
9. The fourth cycle of the autoselect command sequence is a read cycle. The system must read device IDs across the 4th, 5th, and 6th cycles, The system must
provide the bank address. See the Autoselect Command Sequence section for more information.
10. See Table 11.2 on page 40 for description of bus operations.
11. See the Autoselect Command Sequence on page 40.
12. The Unlock Bypass command sequence is required prior to this command sequence.
13. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address.
16. Command is valid when device is ready to read array data or when device is in autoselect mode.
17. The total number of cycles in the command sequence is determined by the number of words written to the write buffer. The maximum number of cycles in the
command sequence is 37.
18. The entire four bus-cycle sequence must be entered for which portion of the password.
19. The ALL PPB ERASE command will pre-program all PPBs before erasure to prevent over-erasure of PPBs.
20. Command sequence resets device for next command after write-to-buffer operation.
21. Entry commands are needed to enter a specific mode to enable instructions only available within that mode.
22. Write Buffer Programming can be initiated after Unlock Bypass Entry.
23. If both the Persistent Protection Mode Locking Bit and the password Protection Mode Locking Bit are set a the same time, the command operation will abort and
return the device to the default Persistent Sector Protection Mode.
24. The Exit command must be issued to reset the device into read mode. Otherwise the device will hang.
25. Note: Autoselect, CFI, OTP, Unlock Bypass Mode and all ASP modes cannot be nested with each other.
26. Only A7 - A0 (lower address bits) are used
27. Amax–A0 (all address bits) are used.
28. Requires the RESET# command to configure the configuration register.
29. See Figure 11.4 on page 50 for details.
12. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 12.2 on page 60 and the following subsections describe the function of these bits. DQ7
and DQ6 each offers a method for determining whether a program or erase operation is complete or in
progress.
12.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the
last word being programmed in the write-buffer-page during Write Buffer Programming. Reading
Data# Polling status on any word other than the last word to be programmed in the write-buffer-page
will return false status information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately tPSP, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately tASP, then the bank returns to the read mode. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors
that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may
not be valid.
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Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ6–DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ6–DQ0 may be still invalid. Valid data on DQ7–DQ0 will appear on successive
read cycles.
Table 12.2 on page 60 shows the outputs for Data# Polling on DQ7. Figure 12.1 on page 56 shows the Data#
Polling algorithm. Figure 19.9 on page 72 in the AC Characteristics section shows the Data# Polling timing
diagram.
Figure 12.1 Data# Polling Algorithm
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
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12.2
She et
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RDY: Ready
The RDY pin is a dedicated status output that indicates valid output data on A/DQ15–A/DQ0 during burst
(synchronous) reads. When RDY is asserted (RDY = VOH), the output data is valid and can be read. When
RDY is de-asserted (RDY = VOL), the system should wait until RDY is re-asserted before expecting the next
word of data.
In synchronous (burst) mode with CE# = OE# = VIL, RDY is de-asserted under the following conditions:
during the initial access; after crossing the internal boundary between addresses 7Eh and 7Fh (and
addresses offset from these by a multiple of 64). The RDY pin will also switch during status reads when a
clock signal drives the CLK input. In addition, RDY = VOH when CE# = VIL and OE# = VIH, and RDY is Hi-Z
when CE# = VIH.
In asynchronous (non-burst) mode, the RDY pin does not indicate valid or invalid output data. Instead, RDY =
VOH when CE# = VIL, and RDY is Hi-Z when CE# = VIH.
12.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address in the
same bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. Note that OE# must be low during toggle bit status reads. When the operation is complete,
DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately tASP, all sectors protected toggle time, then returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling on page 55).
If a program address falls within a protected sector, DQ6 toggles for approximately tPSP after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
See the following for additional information: (toggle bit flowchart), DQ6: Toggle Bit I on page 57 (description),
Figure 19.10 on page 73 (toggle bit timing diagram), and Table 12.1 on page 59 (compares DQ2 and DQ6).
12.4
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure.
Note that OE# must be low during toggle bit status reads. But DQ2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing,
or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits
are required for sector and mode information. Refer to Table 12.2 on page 60 to compare outputs for DQ2
and DQ6.
See the following for additional information: (toggle bit flowchart), DQ6: Toggle Bit I on page 57 (description),
Figure 19.10 on page 73 (toggle bit timing diagram), and Table 12.1 on page 59 (compares DQ2 and DQ6).
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Figure 12.2 Toggle Bit Algorithm
START
Read Byte
DQ7-DQ0
Address = VA
Read Byte
DQ7-DQ0
Address = VA
DQ6 = Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
DQ7-DQ0
Adrdess = VA
DQ6 = Toggle?
No
Yes
FAIL
PASS
Note
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the
subsections on DQ6 and DQ2 for more information.
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Table 12.1 DQ6 and DQ2 Indications
If device is
programming,
and the system reads
then DQ6
and DQ2
at any address,
toggles,
does not toggle.
at an address within a sector selected
for erasure,
toggles,
also toggles.
at an address within sectors not
selected for erasure,
toggles,
does not toggle.
at an address within a sector selected
for erasure,
does not toggle,
toggles.
at an address within sectors not
selected for erasure,
returns array data,
returns array data. The system can read from
any sector not selected for erasure.
at any address,
toggles,
is not applicable.
actively erasing,
erase suspended,
programming in
erase suspend
12.5
Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the
toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or
erase operation. If it is still toggling, the device did not completed the operation successfully, and the system
must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to
determine the status of the operation.
12.6
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write the reset command to return to the read mode (or to the
erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
12.7
DQ3: Sector Erase Start Timeout State Indicator
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also applies after each additional sector erase command. When
the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase
commands from the system can be assumed to be less than tSEA, the system need not monitor DQ3. See
also the Sector Erase Command Sequence section.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands.
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To ensure the command has been accepted, the system software should check the status of DQ3 prior to and
following each subsequent sector erase command. If DQ3 is high on the second status check, the last
command might not have been accepted.
Table 12.2 on page 60 shows the status of DQ3 relative to the other status bits.
12.8
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a ‘1’.
The system must issue the Write to Buffer Abort Reset command sequence to return the device to reading
array data. See Write Buffer Programming Operation on page 18 for more details.
Table 12.2 Write Operation Status
Status
DQ7
(Note 2)
Standard
Mode
Embedded Program Algorithm
DQ7#
0
Program
Suspend
Mode
(Note 3)
Reading within Program Suspended
Sector
Erase
Suspend
Mode
Erase-SuspendRead
Write to
Buffer
(Note 5)
Embedded Erase Algorithm
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
Toggle
0
N/A
No toggle
0
Toggle
0
1
Toggle
N/A
DQ6
DQ1
(Note 4)
Valid data for all address except the address being programed, which will return
invalid data
Reading within Non-Program Suspended
Sector
Data
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
N/A
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
Data
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
N/A
BUSY State
DQ7#
Toggle
0
N/A
N/A
0
Exceeded Timing Limits
DQ7#
Toggle
1
N/A
N/A
0
ABORT State
DQ7#
Toggle
0
N/A
N/A
1
Notes
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. Data are invalid for addresses in a Program Suspended sector.
4. DQ1 indicates the Write to Buffer ABORT status during Write Buffer Programming operations.
5. The data-bar polling algorithm should be used for Write Buffer Programming operations. Note that DQ7# during Write Buffer
Programming indicates the data-bar for DQ7 data for the LAST LOADED WRITE-BUFFER ADDRESS location.
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She et
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13. Absolute Maximum Ratings
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground, All Inputs and I/Os
except ACC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC + 0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +2.5 V
ACC (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 9.5 V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, input at I/Os may undershoot VSS to –2.0 V for periods of up to
20 ns. See Figure 13.1 on page 61. Maximum DC voltage on input and I/Os is VCC + 0.5 V. During voltage transitions outputs may
overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 13.2 on page 61.
2. Minimum DC input voltage on ACC is –0.5 V. During voltage transitions, ACC may undershoot VSS to –2.0 V for periods of up to 20 ns.
See Figure 13.1 on page 61. Maximum DC input voltage on ACC is +9.5 V which may overshoot to +10.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 13.1 Maximum Negative Overshoot Waveform
Figure 13.2 Maximum Positive Overshoot Waveform
20 ns
20 ns
20 ns
+0.8 V
VCC
+2.0 V
–0.5 V
VCC
+0.5 V
–2.0 V
1.0 V
20 ns
20 ns
20 ns
14. Operating Ranges
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–25°C to +85°C
Ambient Temperature (TA) during Accelerated Sector Erase . . . . . . . . . . . . . . .+20°C to +40°C
VCC Supply Voltages
VCC min. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.70 V
VCC max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.95 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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15. DC Characteristics
15.1
CMOS Compatible
Parameter
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
±1
µA
ICCB
Description
VCC Active Burst Read Current
(Note 5)
Test Conditions (Note 1)
Min
Typ
CE# = VIL, OE# = VIL, burst
length = 8
80 MHz
26
36
66 MHz
24
33
CE# = VIL, OE# = VIL, burst
length = 16
80 MHZ
26
38
66 MHz
24
35
CE# = VIL, OE# = VIL, burst
length = 32
80 MHZ
28
40
66 MHz
26
37
CE# = VIL, OE# = VIL, burst
length = continuous
80 MHZ
30
42
66 MHz
28
39
5 MHz
15
18
mA
mA
mA
mA
mA
ICC1
VCC Active Asynchronous Read
Current (Note 2)
CE# = VIL, OE# = VIH
3
4
mA
ICC2
VCC Active Write Current (Note 3)
CE# = VIL, OE# = VIH, ACC = VIH
19
52.5
mA
ICC3
VCC Standby Current (Note 4)
CE# = VIH, RESET# = VIH
(Note 8)
20
70
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL (Note 8)
80
150
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIL (Note 8)
(Note 9)
50
60
mA
ICC6
VCC Sleep Current
CE# = VIL, OE# = VIH
20
70
µA
IPPW
Accelerated Program Current
(Note 6)
ACC = 9 V
20
30
mA
IPPE
Accelerated Erase Current
(Note 6)
ACC = 9 V
20
30
mA
VIL
Input Low Voltage
–0.5
0.4
V
VCCQ – 0.4
VCCQ + 0.2
V
0.1
V
1 MHz
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min
VID
Voltage for Accelerated Program
8.5
9.5
V
Low VCC Lock-out Voltage
1.0
1.4
V
VLKO
VCCQ – 0.1
V
Notes
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns. Typical sleep mode current is equal to ICC3.
5. Specifications assume 8 I/Os switching.
6. Not 100% tested. ACC is not a power supply pin.
7. While measuring Output Leakage Current, CE# should be at VIH.
8. VIH = VCC ± -0.2 V and VIL > -0.1V.
9. Clock Frequency 66 MHz and in Continuous Mode.
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She et
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16. Test Conditions
Figure 16.1 Test Setup
Device
Under
Test
CL
Table 16.1 Test Specifications
Test Condition
All Speeds
Unit
30
pF
2.5 @ 80 MHz, 3 @ 66 MHz
ns
Output Load Capacitance, CL (including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
0.0–VCC
V
Input timing measurement reference levels
VCCQ/2
V
Output timing measurement reference levels
VCCQ/2
V
17. Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
18. Switching Waveforms
Figure 18.1 Input Waveforms and Measurement Levels
VCCQ
Input
VCCQ/2
Measurement Level
VCCQ/2
Output
0.0 V
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19. AC Characteristics
19.1
VCC Power-up
Parameter
Description
Test Setup
Speed
Unit
tVCS
VCC Setup Time
Min
1
ms
Notes
1. VCC >+ VCCQ - 100 mV
2. VCC ramp rate is >1 V/100 µs
Figure 19.1 VCC Power-up Diagram CLK Characterization
tVCS
VCC
VCCQ
RESET#
Parameter
Description
(80 MHz)
(66 MHz)
Unit
fCLK
CLK Frequency
Max
80
66
MHz
tCLK
CLK Period
Min
12.5
15.0
ns
tCH
CLK High Time
Min
5
6.1
ns
tCL
CLK Low Time
tCR (Note)
CLK Rise Time
Max
2.5
3
ns
tCF (Note)
CLK Fall Time
Notes
1. Clock jitter of +/- 5% permitted.
2. Not 100% tested.
Figure 19.2 CLK Characterization
tCLK
tCH
CLK
64
tCR
tCL
tCF
S29NS-N MirrorBit™ Flash Family
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Data
19.2
She et
(Adva nce
In for ma ti on)
Synchronous/Burst Read
Parameter
JEDEC
Standard
Description
(80 MHz)
(66 MHz)
80
Unit
tIACC
Initial Access Time
Max
ns
tBACC
Burst Access Time Valid Clock to Output Delay
Max
9
11.0
ns
tAVDS
AVD# Setup Time to CLK
Min
4
4
ns
tAVDH
AVD# Hold Time from CLK
Min
6
tAVDO
AVD# High to OE# Low
Min
6
0
ns
ns
tACS
Address Setup Time to CLK
Min
4
4
ns
tACH
Address Hold Time from CLK
Min
6
6
ns
tBDH
Data Hold Time from Next Clock Cycle
Min
3
3
ns
tOE
Output Enable to Data, or RDY Valid
Max
9
11.0
ns
ns
tCEZ
Chip Enable to High Z (Note)
Max
8
10
tOEZ
Output Enable to High Z (Note)
Max
8
10
tCES
CE# Setup Time to CLK
Min
tRDYS
RDY Setup Time to CLK
Min
3.5
4
ns
tRACC
Ready access time from CLK
Max
9
11.0
ns
4
ns
ns
Note
Not 100% tested.
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Figure 19.3 Burst Mode Read
5 cycles for initial access shown.
tCES
CE#
1
tCEZ
15.2 ns typ. (66 MHz)
12.5 ns typ. (80 MHz)
2
3
4
5
6
7
CLK
tAVDS
AVD#
tAVDH
tAVDO
tACS
Amax-A16
Aa
tBACC
tACH
Hi-Z
Aa
A/DQ15A/DQ0 (n)
tIACC
Da
Da + 1
Da + 2
Da + 3
Da + n
tOEZ
tBDH
OE#
tOE
RDY (n)
Hi-Z
tCR
Da
Da + 2
Da + 2
Da + n
Hi-Z
Hi-Z
Da
Da + 1
Da + 1
Da + 1
Da + n
Hi-Z
Hi-Z
Hi-Z
A/DQ15A/DQ0 (n + 3)
RDY (n + 3)
Da + 1
Hi-Z
A/DQ15A/DQ0 (n + 2)
RDY (n + 2)
tRDYS
Hi-Z
A/DQ15A/DQ0 (n + 1)
RDY (n + 1)
tRACC
Hi-Z
Da
Da
Da
Da
Da + n
Hi-Z
Hi-Z
Notes
1. Figure shows total number of clock set to five.
2. If any burst address occurs at “address + 1”, “address + 2”, or “address +3”, additional clock delays are inserted, and are indicated by RDY.
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19.3
She et
(Adva nce
In for ma ti on)
Asynchronous Read
Parameter
JEDEC
Standard
Description
(80 MHz)
(66 MHz)
Unit
tCE
Access Time from CE# Low
Max
80
ns
ns
tACC
Asynchronous Access Time
Max
80
tAVDP
AVD# Low Time
Min
8
tAAVDS
Address Setup Time to Rising Edge of AVD
Min
4
4
ns
tAAVDH
Address Hold Time from Rising Edge of AVD
Min
3.7
3.7
ns
Output Enable to Output Valid
Max
9
11.0
ns
tOE
ns
Read
Min
0
Toggle and Data# Polling
Min
10
ns
Max
10
ns
tOEH
Output Enable Hold Time
tOEZ
Output Enable to High Z (See Note)
ns
Note
Not 100% tested.
Figure 19.4 Asynchronous Mode Read
CE#
tOE
OE#
tOEH
WE#
tCE
A/DQ15–
A/DQ0
tOEZ
RA
Valid RD
tACC
RA
Amax–A16
tAAVDH
AVD#
tAVDP
tAAVDS
Note
RA = Read Address, RD = Read Data.
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Sheet
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Hardware Reset (RESET#)
Parameter
JEDEC
Std
All Speed Options
Unit
tRP
RESET# Pulse Width
Description
Min
200
ns
tRH
Reset High Time Before Read
Min
10
µs
Note
Not 100% tested
Figure 19.5 Reset Timings
CE#, OE#
tRH
RESET#
tRP
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Data
19.5
She et
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Erase/Program Operations
Parameter
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
(80 MHz)
(66 MHz)
Unit
Min
45
45
ns
tAVWL
tAS
tWLAX
tAH
Address Setup Time
Min
4
4
ns
Address Hold Time
Min
6
6
ns
tAVDP
AVD# Low Time
Min
tDS
Data Setup Time
Min
25
ns
tWHDX
tDH
Data Hold Time
Min
0
tGHWL
tGHWL
Read Recovery Time Before Write
Typ
0
tELWL
tCS
CE# Setup Time to WE#
Typ
tWHEH
tCH
CE# Hold Time
Typ
0
ns
tWLWH
tWP/tWRL
Write Pulse Width
Typ
30
ns
tWHWL
tWPH
Write Pulse Width High
Typ
20
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tACC
ACC Rise and Fall Time
Min
500
ns
µs
tDVWH
Description
8
20
8
ns
ns
ns
8
ns
tVPS
ACC Setup Time (During Accelerated Programming)
Min
1
tVCS
VCC Setup Time
Min
50
µs
tSEA
Sector Erase Accept Time-out
Max
50
µs
tESL
Erase Suspend Latency
Max
35
µs
µs
tPSL
Program Suspend Latency
Max
35
tERS
Erase Resume to Erase Suspend
Min
30
µs
tPRS
Program Resume to Program Suspend
Min
30
µs
tPSP
Toggle Time During Programming Within a Protected Sector
Typ
1
µs
tASP
Toggle Time During Sector Protection
Typ
100
µs
tWEP
Noise Pulse Margin on WE#
Max
3
ns
Notes
1. Not 100% tested.
2. See the Erase and Programming Performance section for more information.
3. Does not include the preprogramming time.
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Figure 19.6 Program Operation Timings
Program Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
Amax–A16
VA
PA
A/DQ15–
A/DQ0
555h
PA
A0h
VA
PD
VA
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH1
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
Notes
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. Amax–A16 are don’t care during command sequence unlock cycles.
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Figure 19.7 Chip/Sector Erase Operations
Erase Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
VA
SA
Amax–A16
555h for
chip erase
A/DQ15–
A/DQ0
2AAh
SA
55h
VA
10h for
chip erase
VA
30h
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH2
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
Notes
1. SA is the sector address for Sector Erase.
2. Address bits Amax–A16 are don’t cares during unlock cycles in the command sequence.
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Figure 19.8 Accelerated Unlock Bypass Programming Timing
CE#
AVD#
WE#
Amax–A16
PA
A/DQ15–
A/DQ0
Don't Care
CE#
ACC
A0h
PA
PD
Don't Care
tVPS
VID
tACC
VIL or VIH
Notes
1. ACC can be left high for subsequent programming pulses.
2. Use setup and hold times from conventional program operation.
Figure 19.9 Data# Polling Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Amax–A16
VA
A/DQ15–
A/DQ0
VA
High Z
VA
High Z
Status Data
VA
Status Data
Notes
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, and Data# Polling will output true
data.
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Figure 19.10 Toggle Bit Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Amax–A16
VA
A/DQ15–
A/DQ0
VA
High Z
VA
High Z
VA
Status Data
Status Data
Notes
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits will stop toggling.
Figure 19.11 8-, 16-, and 32-Word Linear Burst Address Wrap Around
Address wraps back to beginning of address group.
Initial Access
CLK
39
Address (hex)
A/DQ15–
A/DQ0
39
3A
D0
3B
D1
3C
D2
3D
D3
3E
D4
3F
D5
38
D6
D7
VIH
AVD#
OE#
VIL
VIH
VIL
CE#
VIL
(stays low)
(stays low)
Note
8-word linear burst mode shown. 16- and 32-word linear burst read modes behave similarly. D0 represents the first word of the linear burst.
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Figure 19.12 Latency with Boundary Crossing
Address boundary occurs every 128 words, beginning at address
00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing.
C124
C125
C126
7C
7D
7E
C127
C127
C128
C129
80
81
C130
C131
CLK
Address (hex)
AVD#
7F
7F
RDY(1)
tRACC
latency
tRACC
RDY(2)
OE#,
CE#
83
(stays high)
tRACC
Data
82
tRACC
latency
D124
D125
D126
D127
D128
D129
D130
(stays low)
Notes
1. Cxx indicates the clock that triggers data Dxx on the outputs; for example, C60 triggers D60.
2. At frequencies less than or equal to 66 Mhz, there is no latency.
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Figure 19.13 Back-to-Back Read/Write Cycle Timings
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
tWP
tDS
tOEZ
tACC
tOEH
tDH
A/DQ15–
A/DQ0
PA/SA
PD/30h
RA
RD
RA
RD
555h
AAh
tSR/W
Amax–A16
PA/SA
RA
RA
tAS
AVD#
tAH
Note
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking the status of the program or erase operation
in the “busy” bank. The system should read status twice to ensure valid information.
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20. Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
0.8
3.5
64 Kword
VCC
32 Kword
VCC
0.6
3
16 Kword
VCC
0.15
2
8 Kword
VCC
Sector Erase Time
0.12
2
154 (NS256N)
308 (NS256N)
77 (NS128N)
154 (NS128N)
Unit
s
VCC
58 (NS064N)
116 (NS064N)
131 (NS256N)
262 (NS256N)
66 (NS128N)
132 (NS128N)
Comments
Excludes 00h programming prior to
erasure (Note 5)
Chip Erase Time
ACC
50 (NS064N)
100 (NS064N)
VCC
40
400
ACC
24
240
Effective Word Programming Time
utilizing Program Write Buffer
VCC
9.4
94
ACC
6
60
Total 32-Word Buffer Programming
Time
VCC
300
3000
ACC
192
1920
157.3 (NS256N)
314.6 (NS256N)
78.6 (NS128N)
157.3 (NS128N)
39.3 (NS064N)
78.6 (NS064N)
101 (NS256N)
202 (NS256N)
51 (NS128N)
102 (NS128N)
26 (NS064N)
52 (NS064N)
Single Word Programming Time
VCC
us
s
Chip Programming Time (Note 4)
ACC
Excludes system level overhead
(Note 6)
Notes
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000 cycles typical. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.70 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster
than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 11.4 on
page 52 for further information on command definitions.
21. BGA Ball Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
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22. Physical Dimensions (S29NS256N)
22.1
VDC048—48-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 11 x 10 mm
Package
D
A
D1
A1 CORNER
INDEX MARK
A1 CORNER
10
10 9 8 7 6 5 4 3 2
1
NF1
NF2
NF4
NF3
A
B
C
e
E
SE
E1
D
7
1.00
NF5
NF6
1.00
NF7
B
NF8
1.00
φb
A
A2
0.10 C
C
0.08 C
SD 7
1.00
6
φ 0.15 M C A B
φ 0.05 M C
A1
SEATING PLANE
NOTES:
PACKAGE
VDC 048
JEDEC
N/A
9.95 mm x 10.95 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
A
0.86
---
1.00
NOTE
A1
0.20
---
---
A2
0.66
0.71
0.76
BODY THICKNESS
D
9.85
9.95
10.05
BODY SIZE
E
10.85
10.95
11.05
BODY SIZE
OVERALL THICKNESS
4.50
BALL FOOTPRINT
E1
1.50
BALL FOOTPRINT
MD
10
4
ROW MATRIX SIZE E DIRECTION
N
48
TOTAL BALL COUNT
0.30
0.35
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN ?
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
BALL DIAMETER
e
0.50
BALL PITCH
SD / SE
0.25
SOLDER BALL PLACEMENT
?
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
ROW MATRIX SIZE D DIRECTION
ME
0.25
DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2.
BALL HEIGHT
D1
φb
1.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8.
NOT USED.
9.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3241 \ 16-038.9h.aa01
*For reference only. BSC is an ANSI standard for Basic Space Centering
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23. Physical Dimensions (S29NS128N)
23.1
VDD044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 9.2 x 8 mm
Package
D
A
D1
A1 CORNER
INDEX MARK
A1 CORNER
10
10 9 8 7 6 5 4 3 2
1
NF2
NF1
A
e
B
C
D
E
SE
1.00
7
NF3
NF4
1.00
B
TOP VIEW
E1
SD
φb
7
6
φ 0.15 M C A B
φ 0.05 M C
0.10 C
A2
A
BOTTOM VIEW
A1
SIDE VIEW
SEATING PLANE
C
0.08 C
NOTES:
PACKAGE
VDD 044
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
8.00 mm x 9.20 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
A
0.86
---
1.00
NOTE
A1
0.20
---
---
A2
0.66
0.71
0.76
BODY THICKNESS
D
7.90
8.00
8.10
BODY SIZE
E
9.10
9.20
9.30
BODY SIZE
OVERALL THICKNESS
BALL HEIGHT
4.50
E1
1.50
MD
10
ROW MATRIX SIZE D DIRECTION
ME
4
ROW MATRIX SIZE E DIRECTION
N
44
TOTAL BALL COUNT
0.25
0.30
BALL FOOTPRINT
BALL FOOTPRINT
0.35
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
φb
4.
BALL DIAMETER
e
0.50
BALL PITCH
SD / SE
0.25
SOLDER BALL PLACEMENT
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3239 \ 16-038.9h.aa01
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VDE044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 7.7 x 6.2mm
Package
D
A1 CORNER
INDEX MARK
D1
A
A1 CORNER
10 9 8 7 6 5 4 3 2
1
10
NF2
NF1
e
A
B
E
SE
C
E1
D
1.00
7
NF3
NF4
1.00
SD
B
TOP VIEW
φb
7
6
φ 0.05 M C
φ 0.15 M C A B
0.10 C
A2
A
A1
SIDE VIEW
SEATING PLANE
C
BOTTOM VIEW
0.08 C
NOTES:
PACKAGE
VDE 044
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
7.60 mm x 6.10 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
A
0.86
---
1.00
NOTE
A1
0.20
---
---
A2
0.66
0.71
0.76
BODY THICKNESS
D
7.50
7.60
7.70
BODY SIZE
E
6.00
6.10
6.20
BODY SIZE
OVERALL THICKNESS
BALL HEIGHT
4.50
E1
1.50
MD
10
ROW MATRIX SIZE D DIRECTION
ME
4
ROW MATRIX SIZE E DIRECTION
N
44
TOTAL BALL COUNT
0.25
0.30
BALL FOOTPRINT
BALL FOOTPRINT
0.35
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
φb
4.
BALL DIAMETER
e
0.50 BSC.
BALL PITCH
SD / SE
0.25 BSC.
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3308 \ 16-038.9L
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24. Revision Summary
24.1
Revision A (April 16, 2004)
Initial Release.
24.2
Revision A1 (June 28, 2004)
General Description
Corrected the effective temperature range to -25°C to +85°C.
Connection Diagram
Corrected pin B5 on the S29NS256N to A23.
Corrected pin B1 on the S29NS256N to VCC.
Corrected pin B1 on the S29NS128N to VCC.
Corrected pin B1 on the S29NS064N to VCC.
Created separate illustrations for S29NS128N and S29NS064N.
Ordering Information
Corrected the Package Type offerings.
Valid Combinations table
Included package type description for S29NS064N device.
Completely revised format and layout.
8-, 16-, and 32-Word Linear Burst without Wrap Around
Corrected information in this section.
Lock Register
Section and table were substantially revised.
Programmable Wait State
Corrected information in this section.
Handshaking Feature
Corrected information in this section.
Autoselect Command Sequence
Corrected information in this section.
Physical Dimensions
Corrected the drawing for the S29NS064N device.
Write Buffer Command Sequence
Corrected the address for the Write Buffer Load sequence.
24.3
Revision A2 (September 9, 2004)
Connection Diagrams
Updated pin labels.
Ordering Information
Completely updated the OPN table.
Valid Combinations table
Updated this table.
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Continuous Burst
Added information to this section.
Lock Register
Updated the lock register table.
Configuration Register
Updated the settings for CR15.
Device ID table
Updated the indicator bits information.
Figure 7
Updated the waveform.
Figure 21
Updated the waveform.
24.4
Revision A3 (November 16, 2004)
Table “Primary Vendor-Specific Extended Query”
Updated the data values for addresses 45h, 53h, and 54h.
Global
Updated the synchronous and asynchronous access times.
Programmable Wait State
Updated this section.
Write Buffer Programming Command Sequence
Added a note to the table.
24.5
Revision A3a (April 5, 2005)
Global
Updated reference links.
Distinctive Characteristics
Added note to ACC is represented as VPP in older documentation.
General Description
Added note regarding ACC and VPP.
Block Diagram
Added same note regarding ACC and VPP.
Added WP# term and arrow to State Control and Command Register block.
Block Diagram of Simultaneous Operation Circuit
Changed VPP to Vssq.
Added WP# term and arrow to State Control and Command Register block.
Added ACC term and arrow to State Control and Command Register block.
Added note to ACC is represented as VPP in older documentation.
Input/Output Description
Added VPP term adjacent to ACC term.
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Tables 2, 3, 4, 5, 6, 7, 8, and 9
Change Wait State titles and columns in these tables.
Table 24
Changed Function column and Settings to represent Reserved CR Bits.
Table 27
Removed several bold lines between columns.
DC Characteristics
Reduced Typ and Max values for ICCB.
Added note for clock frequency in continuous mode.
Erase & Programming Performance Table
Corrected Sector Erase Time Typ. Value for 64 Kword from 0.6 to 0.8 in Erase and Programming
Performance table
Physical Dimensions (S29NS046N)
Replaced VDE044 with new package drawing.
Device History
Updated Device History table
24.6
Revision A4 (April 12, 2005)
Global Changes
Removed 64Mb density.
Removed 54MHz speed option.
Changed ACC to VPP.
Read Access Times
Removed burst access for 54MHz.
Defined asynchronous random access and synchronous random access to 80 ns for all speed options.
DC Characteristics
CMOS Compatible Table.
Updated ICC3 and ICC6 values from 40µA to 70µA.
24.7
Revision A5 (August 15, 2005)
Added S29NS064N with new sector and bank architecture.
Added VDE044 package type for S29NS064N
Erase/Program Operations table
Updated description and values for tCS.
Device History
Updated table with latest revision information.
24.8
Revision A6 (August 24, 2005)
AC Characteristics
Updated the notes for the VCC Power-up table
Erase and Programming Performance Operations
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Updated max value for 8 Kword Sector Erase Time
Updated typical and max values for Chip Programming Time
24.9
Revision A7 (September 16, 2005)
Ordering Information
Updated the Package Type options
Valid Combinations table
Updated entire table to show new options
24.10 Revision A8 (September 23, 2005)
Dynamic Protection Bit (DYB)
Added note: Dynamic protection bits revert back to their default values after programming the device “Lock
Register.”
Lock Register Table
Added Note: When the device lock register is programmed (PPB mode lock bit is programmed, password
mode lock bit programmed, or the Secured Silicon lock bit is programmed) all DYBs revert to the power-on
default state.
24.11 Revision A9 (November 15, 2005)
Write Buffer Programming Operation
Updated the flowchart
24.12 Revision A10 (March 23, 2006)
Asynchronous Read AC Characteristics table
Updated the minimum specifications of tAAVDH for both speed bins.
Global Change
Changed VPP to ACC
24.13 Revision A11 (April 20, 2006)
Global Change
Changed layout and font
Absolute Maximum Ratings
Updated Figure 13.1 and 13.2
24.14 Revision A12 (June 13, 2006)
Global Change
Publication Identification number was incorrectly set to S29NS-N_01 for revision 11 instead of S29NS-N_00.
It is corrected in this revision. The document file name was not affected by this error.
Added a note to Table 8.1 Device Bus Operations
Added a note to Table 11.1 Configuration Register
Added a note to section 11.9 Erase Suspend/Erase Resume Commands
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit™ Flash Family
83
Da ta
Sheet
( Ad vanc e
I nfo r m at io n)
Added a note to section 11.10 Program Suspend/Program Resume Commands
Added a note to section 11.13 Non-Volatile Sector Protection Command Set Definitions
Added a note to section 11.15 Volatile Sector Protection Command Set
Modified the “All PPB Erase” row of Table 11.4 Command Definitions (Sheet 2 of 3)
Changed VI/O to VCCQ in section 15.1 CMOS Compatible
Changed VI/O to VCCQ in Table 16.1 Test Specifications
Changed VI/O to VCCQ in Figure 18.1 Input Waveforms and Measurement Levels
Added parameters tERS and tPRS in section 19.5 Erase/Program Operations
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2004 - 2006 Spansion LLC. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations
thereof are trademarks of Spansion LLC. Other names are for informational purposes only and may be trademarks of their respective owners.
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S29NS-N MirrorBit™ Flash Family
S29NS-N_00_A12 June 13, 2006