PHOTODIODE Si PIN photodiode S4349 Quadrant Si PIN photodiode S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. Features Applications l Quadrant (2 × 2) element format l Low cross-talk: 2 % Max. l Wide spectral response range: 190 to 1000 nm l High-speed response: fc=20 MHz l TO-5 metal package l Laser beam axis alignment l Position sensing ■ General ratings Parameter Window material Active area Element gap Symbol A - Value Quartz glass 3.0/4 element 100 Unit mm µm ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -20 to +60 -55 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Condition Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=5 V Temperature coefficient of ID TCID VR=5 V, RL=50 Ω Cut-off frequency fc λ=780 nm, -3 dB Terminal capacitance Ct VR=5 V, f=1 MHz Noise equivalent power NEP VR=5 V, λ=λp Cross-talk CL VR=5 V, λ=780 nm Typ. 190 to 1000 720 0.45 0.01 1.12 Max. 0.2 - Unit nm nm A/W nA times/°C 20 - MHz 25 4.0 × 10-15 - 2 pF W/Hz1/2 % 1 Si PIN photodiode ■ Photo sensitivity temperature characteristic ■ Spectral response (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 (Typ.) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.8 0 190 +1.0 +0.5 0 -0.5 190 1000 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0126EA (Typ. Ta=25 ˚C) 1 nA TERMINAL CAPACITANCE 10 pA 1 pA 100 fA 0.1 1 10 (Typ. Ta=25 ˚C, f=1 MHz) 1 nF 100 pA DARK CURRENT KMPDB0127EA ■ Terminal capacitance vs. reverse voltage ■ Dark current vs. reverse voltage 10 fA 0.01 S4349 100 pF 10 pF 1 pF 100 fF 0.1 100 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KMPDB0128EA KMPDB0129EA ■ Dimensional outline (unit: mm) 9.2 ± 0.2 8.1 ± 0.2 d b c 0.1 4.1 ± 0.2 ACTIVE AREA DETAILS OF PHOTODIODE 13.5 2.95 PHOTOSENSITIVE SURFACE 0.1 a 3.0 WINDOW 5.9 ± 0.1 0.45 LEAD 5.08 ± 0.2 ANODE d ANODE a CATHODE (CASE) ANODE b ANODE c CATHODE (CASE) NC KMPDA0114EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1007E02 Mar. 2007 DN