SA58632 2 × 2.2 W BTL audio amplifier Rev. 01 — 27 June 2006 Product data sheet 1. General description The SA58632 is a two-channel audio amplifier in an HVQFN20 package. It provides power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is comprised of two BTL (Bridge-Tied Load) amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The SA58632 is housed in a 20-pin HVQFN package, which has an exposed die attach paddle enabling reduced thermal resistance and increased power dissipation. 2. Features n n n n n n n n n Low junction-to-ambient thermal resistance using exposed die attach paddle Gain can be fixed with external resistors from 6 dB to 30 dB Standby mode controlled by CMOS-compatible levels Low standby current < 10 µA No switch-on/switch-off plops High power supply ripple rejection: 50 dB minimum ElectroStatic Discharge (ESD) protection Output short circuit to ground protection Thermal shutdown protection 3. Applications n Professional and amateur mobile radio n Portable consumer products: toys and games n Personal computer remote speakers SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 4. Quick reference data Table 1. Quick reference data VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage operating Iq quiescent current RL = ∞ Ω Istb standby current Po output power THD+N total harmonic distortion-plus-noise PSRR power supply rejection ratio Min Typ Max Unit 2.2 9 18 V - 15 22 mA VMODE = VCC - - 10 µA THD+N = 10 % 1.2 1.5 - W [1] THD+N = 0.5 % 0.9 1.1 - W THD+N = 10 %; VCC = 9 V - 2.2 - W Po = 0.5 W - 0.15 0.3 % [2] 50 - - dB [3] 40 - - dB [1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. [2] Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [3] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 5. Ordering information Table 2. Ordering information Type number Package SA58632BS Name Description Version HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 6 × 5 × 0.85 mm SOT910-1 SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 2 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 6. Block diagram VCCL VCCR 17 SA58632 INL− INL+ 10 16 15 14 OUTL− R VCCL R 20 kΩ 1 OUTL+ 20 kΩ STANDBY/MUTE LOGIC INR− INR+ 11 12 13 OUTR− R VCCR R 20 kΩ SVR 6 OUTR+ 3 20 kΩ MODE BTL/SE 2 4 STANDBY/MUTE LOGIC 5 n.c. 8 9 19 18 20 7 GND GND GND GND LGND RGND 002aac078 Fig 1. Block diagram of SA58632 SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 3 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 7. Pinning information 17 VCCL 18 GND terminal 1 index area 19 GND 20 LGND 7.1 Pinning OUTL+ 1 16 OUTL− MODE 2 15 INL− SVR 3 BTL/SE 4 13 INR+ n.c. 5 12 INR− OUTR+ 6 11 OUTR− 14 INL+ 8 9 GND GND VCCR 10 7 RGND SA58632BS 002aac079 Transparent top view Fig 2. Pin configuration for HVQFN20 7.2 Pin description Table 3. Symbol Pin description Pin Description OUTL+ 1 positive loudspeaker terminal, left channel MODE 2 operating mode select (standby, mute, operating) SVR 3 half supply voltage, decoupling ripple rejection BTL/SE 4 BTL loudspeaker or SE headphone operation n.c. 5 not connected OUTR+ 6 positive loudspeaker terminal, right channel RGND 7 ground, right channel GND 8, 9, 18, 19 ground[1] VCCR 10 supply voltage; right channel OUTR− 11 negative loudspeaker terminal, right channel INR− 12 negative input, right channel INR+ 13 positive input, right channel INL+ 14 positive input, left channel INL− 15 negative input, left channel OUTL− 16 negative output terminal, left channel VCCL 17 supply voltage, left channel LGND 20 ground, left channel [1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept floating. When connected to the ground plane, the PCB can be used as heatsink. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 4 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 8. Functional description The SA58632 is a two-channel BTL audio amplifier capable of delivering 2 × 1.5 W output power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power supply. Using the MODE pin, the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range of 6 dB to 30 dB by external feedback resistors. 8.1 Power amplifier The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN power transistor. The total voltage loss is < 1 V. With a supply voltage of 6 V and an 8 Ω loudspeaker, an output power of 1.5 W can be delivered to the load, and with a 9 V supply voltage and an 8 Ω loudspeaker an output power of 2.2 W can be delivered. 8.2 Mode select pin (MODE) The device is in Standby mode (with a very low current consumption) if the voltage at the MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute condition is useful to suppress plop noise at the output, caused by charging of the input capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V (see Figure 6). 8.3 BTL/SE output configuration To invoke the BTL configuration (see Figure 3), the BTL/SE pin is taken to logic HIGH or not connected. The output differentially drives the speakers, so there is no need for coupling capacitors. The headphone can be connected to the amplifier negative outputs using a coupling capacitor for each channel. The headphone common ground is connected to the amplifier ground. To invoke the Single-Ended (SE) configuration (see Figure 15), the BTL/SE pin is taken to logic LOW or connected to ground. The positive outputs are muted with a DC level of 0.5VCC. Using a coupling capacitor for each channel, speakers can be connected to the amplifier negative outputs. The speaker common ground is connected to the amplifier ground. Headphones can be connected to the negative outputs without using output coupling capacitors. The headphone common ground pin is connected to one of the amplifier positive output pins. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 5 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage operating −0.3 +18 V VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current - 1 A Tstg storage temperature non-operating −55 +150 °C Tamb ambient temperature operating −40 +85 °C VP(sc) short-circuit supply voltage - 10 V Ptot total power dissipation HVQFN20 - 2.2 W 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air 64.5 Rth(j-sp) [1] mm2 (10 square inch) heat spreader [1] thermal resistance from junction to solder point Typ Unit 80 K/W 22 K/W 3 K/W Thermal resistance is 22 K/W with DAP soldered to 64.5 mm2 (10 square inch), 1 ounce copper heat spreader. 11. Static characteristics Table 6. Static characteristics VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage operating Iq quiescent current RL = ∞ Ω Istb standby current VMODE = VCC VO output voltage ∆VO(offset) differential output voltage offset IIB input bias current VMODE voltage on pin MODE [1] [2] Min Typ Max Unit 2.2 9 18 V - 15 22 mA - - 10 µA - 2.2 - V - - 50 mV pins INL+, INR+ - - 500 nA pins INL−, INR− - - 500 nA operating 0 - 0.5 V mute 1.5 - VCC − 1.5 V standby VCC − 0.5 - VCC V IMODE current on pin MODE 0 V < VMODE < VCC - - 20 µA VI(SE) input voltage on pin BTL/SE single-ended (SE) 0 - 0.6 V VI(BTL) input voltage on pin BTL/SE BTL 2 - VCC V II(SE) input current on pin BTL/SE VI(SE) = 0 V; pin connected to ground in SE mode - - 100 µA SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 6 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier [1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. [2] The DC output voltage with respect to ground is approximately 0.5 × VCC. 12. Dynamic characteristics Table 7. Dynamic characteristics VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Po output power THD+N = 10 % 1.2 1.5 - W THD+N = 0.5 % 0.9 1.1 - W THD+N = 10 %; VCC = 9 V; application demo board - 2.2 - W Po = 0.5 W - 0.15 0.3 % THD+N total harmonic distortion-plus-noise Gv(cl) closed-loop voltage gain ∆Zi differential input impedance Vn(o) noise output voltage power supply rejection ratio PSRR VO(mute) mute output voltage αcs channel separation [1] mute condition 6 - 30 dB - 100 - kΩ [2] - - 100 µV [3] 50 - - dB [4] 40 - - dB [5] - - 200 µV 40 - - dB [1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3. [2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of Rs = 0 Ω at the input. [3] Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [4] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 7 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 13. Application information 13.1 BTL application Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. The BTL diagram is shown in Figure 3. 1 µF VCC R2 50 kΩ R1 INL− 15 17 10 10 kΩ INL+ VIL 16 14 OUTL− C3 47 µF RL 1 OUTR− 1 µF 100 µF 100 nF R4 50 kΩ R3 SA58632 INR− 10 kΩ INR+ VIR OUTL+ SVR MODE BTL/SE 12 11 13 OUTR− 3 RL 2 4 6 20 OUTR+ 7 GND 002aac080 R2 Gain left = 2 × ------R1 R4 Gain right = 2 × ------R3 Pins 8, 9, 18 and 19 connected to ground. Fig 3. Application diagram of SA58632 BTL differential output configuration SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 8 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 14. Test information 14.1 Static characterization The quiescent current has been measured without any load impedance (Figure 4). Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching levels of the mute and standby respectively depends on the supply voltage level. 002aac081 30 002aac089 10 VO (V) 1 Iq (mA) 10−1 20 10−2 (1) 10−3 10 (2) (3) 10−4 10−5 10−6 10−1 0 0 4 8 12 16 20 VCC (V) 1 102 10 VMODE (V) RL = ∞ Ω Band-pass = 22 Hz to 22 kHz. (1) VCC = 3 V. (2) VCC = 5 V. (3) VCC = 12 V. Fig 4. Iq versus VCC Fig 5. VO versus VMODE 002aac090 16 VMODE (V) 12 standby 8 mute 4 operating 0 0 4 8 12 16 VCC (V) Fig 6. VMODE versus VCC SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 9 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 14.2 BTL dynamic characterization The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 7) was measured with a low-pass filter of 80 kHz. The value of capacitor C2 influences the behavior of PSRR at low frequencies; increasing the value of C2 increases the performance of PSRR. 002aac083 10 002aac084 −60 αcs (dB) THD+N (%) (1) −70 1 (2) (1) −80 (3) (2) 10−1 −90 10−2 10 102 103 104 −100 105 102 10 103 f (Hz) 104 105 f (Hz) VCC = 6 V; VO = 2 V; RL = 8 Ω. Po = 0.5 W; Gv = 20 dB. (1) VCC = 6 V; RL = 8 Ω. (1) Gv = 30 dB. (2) VCC = 7.5 V; RL = 16 Ω. (2) Gv = 20 dB. (3) Gv = 6 dB. Fig 7. THD+N versus frequency Fig 8. Channel separation versus frequency 002aac085 −20 PSRR (dB) (1) −40 (2) −60 (3) −80 10 102 103 104 105 f (Hz) VCC = 6 V; Rs = 0 Ω; Vripple = 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Fig 9. PSRR versus frequency SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 10 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 14.3 Thermal behavior The measured thermal performance of the HVQFN20 package is highly dependent on the configuration and size of the heat spreader on the application demo board. Data may not be comparable between different semiconductors manufacturers because the application demo boards and test methods are not standardized. Also, the thermal performance of packages for a specific application may be different than presented here, because of the configuration of the copper heat spreader of the application boards may be significantly different. Philips Semiconductors uses FR-4 type application boards with 1 ounce copper traces with solder coating. The demo board (see Figure 23) has a 1 ounce copper heat spreader that runs under the IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20 package. The heat spreader is symmetrical and provides a heat spreader on both top and bottom of the PCB. The heat spreader on top and bottom side of the demo board is connected through 2 mm diameter plated through holes. Directly under the DAP (Die Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total top and bottom heat spreader area is 64.5 mm2 (10 in2). The junction to ambient thermal resistance, Rth(j-a) = 22 K/W for the HVQFN20 package when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper heat spreader on the demo PCB. The maximum sine wave power dissipation for Tamb = 25 °C is: 150 – 25 --------------------- = 5.7 W 22 Thus, for Tamb = 60 °C the maximum total power dissipation is: 150 – 60 --------------------- = 4.1 W 22 The power dissipation versus ambient temperature curve (Figure 10) shows the power derating profiles with ambient temperature for three sizes of heat spreaders. For a more modest heat spreader using 5 square inch area on the top or bottom side of the PCB, the Rth(j-a) is 31 K/W. When the package is not soldered to a heat spreader, the Rth(j-a) increases to 60 K/W. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 11 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac283 6 (1) P (W) (2) 4 2 (3) 0 0 40 80 120 160 Tamb (°C) (1) 64.5 mm2 heat spreader top and bottom (1 ounce copper). (2) 32.3 mm2 heat spreader top or bottom (1 ounce copper). (3) No heat spreader. Fig 10. Power dissipation versus ambient temperature The characteristics curves (Figure 11a and Figure 11b, Figure 12, Figure 13a and Figure 13b, and Figure 14) show the room temperature performance for SA58632 using the demo PCB shown in Figure 23. For example, Figure 11 “Power dissipation versus output power” (a and b) show the performance as a function of load resistance and supply voltage. Worst case power dissipation is shown in Figure 12. Figure 13a shows that the part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load at 9 V supply, while Figure 13b shows that the part delivers 3.3 W per channel at 12 V supply and 16 Ω load, THD+N = 10 %. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 12 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac288 3 002aac289 3 (4) P (W) P (W) (3) 2 2 (2) (3) (2) 1 1 (1) (1) 0 0 0 1 2 3 0 1 2 3 Po (W) 4 Po (W) (1) VCC = 6 V. (1) VCC = 6 V. (2) VCC = 7.5 V. (2) VCC = 7.5 V. (3) VCC = 9 V. (3) VCC = 9 V. (4) VCC = 12 V. a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB Fig 11. Power dissipation versus output power 002aac287 4 Po (W) 3 2 (1) (2) (3) 1 0 0 4 8 12 VCC (V) (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig 12. Worst case power dissipation versus VCC SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 13 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac284 102 THD+N (%) 10 (1) (2) 1 10−2 10−2 1 (1) (2) (3) (4) 10 (3) 1 10−3 10−2 002aac285 102 THD+N (%) 10−3 10−3 10 10−2 1 10 Po (W) Po (W) (1) VCC = 6 V. (1) VCC = 6 V. (2) VCC = 7.5 V. (2) VCC = 7.5 V. (3) VCC = 9 V. (3) VCC = 9 V. (4) VCC = 12 V. a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB Fig 13. THD+N versus output power 002aac286 4 Po (W) (3) 3 (2) 2 1 (1) 0 0 4 8 12 VCC (V) THD+N = 10 %; f = 1 kHz; Gv = 20 dB. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig 14. Output power versus VCC SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 14 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 14.4 Single-ended application Tamb = 25 °C; VCC = 7.5 V; f = 1 kHz; RL = 8 Ω; Gv = 20 dB; audio band-pass 20 Hz to 20 kHz. The single-ended application diagram is shown in Figure 15. 1 µF VCC R2 100 kΩ R1 INL− 15 17 10 10 kΩ INL+ VIL 16 14 100 µF 100 nF OUTL− C4 470 µF RL = 8 Ω C3 47 µF OUTR− 1 µF 1 R4 100 kΩ R3 10 kΩ VIR OUTL+ SA58632 INR− INR+ SVR MODE BTL/SE 12 11 13 OUTR− 470 µF RL = 8 Ω 3 2 4 C5 6 20 OUTR+ 7 GND 002aac091 R2 Gain left = ------R1 R4 Gain right = ------R3 Pins 8, 9, 18 and 19 connected to ground. Fig 15. SE application circuit configuration If the BTL/SE pin is to ground, the positive outputs (OUTL+, OUTR+) will be in mute condition with a DC level of 0.5VCC. When a headphone is used (RL > 25 Ω) the SE headphone application can be used without coupling capacitors by placing the load between negative output and one of the positive outputs (for example, pin 1) as the common pin. Increasing the value of the tantalum or electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2 × IO) at the load impedance (< 16 Ω), the SE application with output capacitors connected to ground is advised. The capacitor value of C4/C5 in combination with the load impedance determines the low frequency behavior. The total harmonic distortion-plus-noise as a function of frequency was measured with a low-pass filter of 80 kHz. The value of the capacitor C3 influences the behavior of the PSRR at low frequencies; increasing the value of C3 increases the performance of PSRR. SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 15 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac290 102 THD+N (%) THD+N (%) (1) (2) (3) 10 002aac291 10 (1) (2) (3) 1 1 10−1 10−1 10−2 10−2 10−1 1 10−2 10−2 10 10−1 1 Po (W) 10 Po (W) (1) VCC = 7.5 V. (1) VCC = 9 V. (2) VCC = 9 V. (2) VCC = 12 V. (3) VCC = 12 V. (3) VCC = 15 V. a. RL = 4 Ω; f = 1 kHz; Gv = 10 dB b. RL = 8 Ω; f = 1 kHz; Gv = 10 dB 002aac292 102 THD+N (%) (1) (2) (3) 10 1 10−1 10−2 10−2 10−1 1 10 Po (W) (1) VCC = 9 V. (2) VCC = 12 V. (3) VCC = 15 V. c. RL = 16 Ω; f = 1 kHz; Gv = 10 dB Fig 16. THD+N versus output power SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 16 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac093 10 002aac094 −20 αcs (dB) THD+N (%) (1) −40 1 −60 (2) 10−1 (1) −80 (2) (3) (4) (5) (3) 10−2 10 102 103 104 105 −100 10 102 103 104 f (Hz) 105 f (Hz) Po = 0.5 W; Gv = 20 dB. Vo = 1 V; Gv = 20 dB. (1) VCC = 7.5 V; RL = 4 Ω. (1) VCC = 5 V; RL = 32 Ω, to buffer. (2) VCC = 9 V; RL = 8 Ω. (2) VCC = 7.5 V; RL = 4 Ω. (3) VCC = 12 V; RL = 16 Ω. (3) VCC = 9 V; RL = 8 Ω. (4) VCC = 12 V; RL = 16 Ω. (5) VCC = 5 V; RL = 32 Ω. Fig 17. THD+N versus frequency Fig 18. Channel separation versus frequency 002aac095 −20 PSRR (dB) 002aac096 2.0 Po (W) 1.6 −40 (1) (2) (3) 1.2 (1) 0.8 (2) −60 (3) −80 10 102 103 0.4 104 105 0 0 4 Rs = 0 Ω; Vripple = 100 mV. (1) RL = 4 Ω. (2) Gv = 20 dB. (2) RL = 8 Ω. (3) Gv = 0 dB. (3) RL = 16 Ω. 16 Fig 20. Po versus VCC SA58632_1 Product data sheet 12 THD+N = 10 %. (1) Gv = 24 dB. Fig 19. PSRR versus frequency 8 VCC (V) f (Hz) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 17 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac097 4 P (W) (2) 3 (1) (3) 2 1 0 0 4 8 12 16 VCC (V) THD+N = 10 %. (1) RL = 4 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig 21. Worst case power dissipation versus VCC SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 18 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 002aac293 3 P (W) 002aac294 3 P (W) (3) (3) 2 2 (2) (2) (1) 1 (1) 1 0 0 0 0.4 0.8 1.2 0 1.6 0.8 1.6 2.4 Po (W) Po (W) (1) VCC = 7.5 V. (1) VCC = 9 V. (2) VCC = 9 V. (2) VCC = 12 V. (3) VCC = 12 V. (3) VCC = 15 V. a. RL = 4 Ω; f = 1 kHz; Gv = 10 dB b. RL = 8 Ω; f = 1 kHz; Gv = 10 dB 002aac295 1.6 P (W) (3) 1.2 (2) 0.8 (1) 0.4 0 0 0.4 0.8 1.2 1.6 Po (W) (1) VCC = 9 V. (2) VCC = 12 V. (3) VCC = 15 V. c. RL = 16 Ω; f = 1 kHz; Gv = 10 dB Fig 22. Power dissipation versus output power 14.5 General remarks The frequency characteristics can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter. 14.6 SA58632BS PCB demo The application demo board may be used for evaluation in either BTL or SE configuration as shown in the schematics in Figure 3 and Figure 15. The demo PCB is laid out for a 64.5 mm2 (10 in2) heat spreader (total of top and bottom heat spreader area). SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 19 of 26 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Philips Semiconductors SA58632_1 Product data sheet SA58632BS Rev5 Audio Amplifier VCC 100 µF GND OUTL− OUTL+ 10 kΩ 10 kΩ INL− Rev. 01 — 27 June 2006 GND VCC/2 VCC OUTR+ GND 1 µF 11 kΩ 11 kΩ VCC SEL GND BTL/SE MODE 1 µF 1 µF 56 kΩ 47 µF 56 kΩ INR− 1 µF OUTR− SA58632 Fig 23. SA58632BS PCB demo 2 × 2.2 W BTL audio amplifier 20 of 26 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 001aae327 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 15. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 6 x 5 x 0.85 mm B D SOT910-1 A terminal 1 index area E A A1 c detail X e1 1/2 e v w b e 7 10 C C A B C M M y1 C y L 6 11 e e2 Eh 1/2 e 1 16 terminal 1 index area 20 17 X Dh 2.5 0 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b c D Dh E Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.4 0.3 0.2 5.1 4.9 3.15 2.85 6.1 5.9 4.15 3.85 0.8 2.4 4 0.65 0.40 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT910-1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 05-10-11 Fig 24. Package outline SOT910-1 (HVQFN20) SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 21 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 16. Soldering 16.1 Introduction to soldering surface mount packages There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 16.2 Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow temperatures range from 215 °C to 260 °C depending on solder paste material. The peak top-surface temperature of the packages should be kept below: Table 8. SnPb eutectic process - package peak reflow temperatures (from J-STD-020C July 2004) Package thickness Volume mm3 < 350 Volume mm3 ≥ 350 < 2.5 mm 240 °C + 0/−5 °C 225 °C + 0/−5 °C ≥ 2.5 mm 225 °C + 0/−5 °C 225 °C + 0/−5 °C Table 9. Pb-free process - package peak reflow temperatures (from J-STD-020C July 2004) Package thickness Volume mm3 < 350 Volume mm3 350 to 2000 Volume mm3 > 2000 < 1.6 mm 260 °C + 0 °C 260 °C + 0 °C 260 °C + 0 °C 1.6 mm to 2.5 mm 260 °C + 0 °C 250 °C + 0 °C 245 °C + 0 °C ≥ 2.5 mm 250 °C + 0 °C 245 °C + 0 °C 245 °C + 0 °C Moisture sensitivity precautions, as indicated on packing, must be respected at all times. 16.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 22 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 16.4 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 °C and 320 °C. 16.5 Package related soldering information Table 10. Suitability of surface mount IC packages for wave and reflow soldering methods Package[1] Soldering method Wave Reflow[2] BGA, HTSSON..T[3], LBGA, LFBGA, SQFP, SSOP..T[3], TFBGA, VFBGA, XSON not suitable suitable DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable[4] suitable PLCC[5], SO, SOJ suitable suitable not recommended[5][6] suitable SSOP, TSSOP, VSO, VSSOP not recommended[7] suitable CWQCCN..L[8], not suitable LQFP, QFP, TQFP PMFP[9], WQCCN..L[8] [1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. [2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. SA58632_1 Product data sheet not suitable © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 23 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier [3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. [4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. [6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. [9] Hot bar soldering or manual soldering is suitable for PMFP packages. 17. Abbreviations Table 11. Abbreviations Acronym Description BTL Bridge-Tied Load CMOS Complementary Metal Oxide Semiconductor DAP Die Attach Paddle ESD ElectroStatic Discharge NPN Negative-Positive-Negative PCB Printed-Circuit Board PNP Positive-Negative-Positive RMS Root Mean Squared SE Single-Ended THD Total Harmonic Distortion 18. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes SA58632_1 20060627 Product data sheet - - SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 24 of 26 SA58632 Philips Semiconductors 2 × 2.2 W BTL audio amplifier 19. Legal information 19.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 19.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 19.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 19.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 20. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] SA58632_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 27 June 2006 25 of 26 Philips Semiconductors SA58632 2 × 2.2 W BTL audio amplifier 21. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 9 10 11 12 13 13.1 14 14.1 14.2 14.3 14.4 14.5 14.6 15 16 16.1 16.2 16.3 16.4 16.5 17 18 19 19.1 19.2 19.3 19.4 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 5 Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5 BTL/SE output configuration. . . . . . . . . . . . . . . 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 8 BTL application . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Static characterization . . . . . . . . . . . . . . . . . . . 9 BTL dynamic characterization . . . . . . . . . . . . 10 Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 11 Single-ended application . . . . . . . . . . . . . . . . 15 General remarks . . . . . . . . . . . . . . . . . . . . . . . 19 SA58632BS PCB demo . . . . . . . . . . . . . . . . . 19 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 22 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 22 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 23 Package related soldering information . . . . . . 23 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Contact information. . . . . . . . . . . . . . . . . . . . . 25 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 27 June 2006 Document identifier: SA58632_1