SBM1040CT 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability Very Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 POWERMITEâ3 E A G P 3 Dim Min Max A 4.03 4.09 B 6.40 6.61 C J B H D E Mechanical Data · · · · · · 1 Case: POWERMITEâ3 Molded Plastic Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Sheet 2 Weight: 0.072 grams (approx.) Maximum Ratings G 2 M D K C C PIN 1 1.14 .178 NOM 5.01 5.17 J 4.37 4.43 L PIN 3, BOTTOMSIDE HEAT SINK PIN 2 1.83 NOM 1.10 H K L .889 NOM .178 NOM .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 40 V VR(RMS) 28 V IO 5 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load Per Package (JEDEC Method), total device TC = 115°C IFSM 50 A Typical Thermal Resistance Junction to Soldering Point Per Element RqJS 2.5 °C/W Tj -55 to +125 °C TSTG -55 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Operating Temperature Range Storage Temperature Range DS30356 Rev. 2 - 1 per element total device 1 of 3 www.diodes.com SBM1040CT @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 1) Symbol Min Typ Max Unit V(BR)R 40 ¾ ¾ V IR = 500mA IF = 5A, Tj = 25°C IF = 5A, Tj = 100°C IF = 10A, Tj = 25°C IF = 10A, Tj = 100°C Test Condition Forward Voltage (Note 1) Per Element VF ¾ ¾ ¾ ¾ 0.45 0.39 0.53 0.50 0.48 0.42 0.575 0.55 V Peak Reverse Current (Note 1) Per Element IR ¾ ¾ 35 4 10 2 150 10 80 5 mA mA mA mA VR = 35V, Tj = 25°C VR = 35V, Tj = 100°C VR = 17.5V, Tj = 25°C VR = 17.5V, Tj = 100°C Total Capacitance Per Element CT ¾ 375 ¾ pF f = 1.0MHz, VR = 4.0V DC Notes: 1. Short duration test pulse used to minimize self-heating effect. Ordering Information (Note 2) Notes: Device Packaging Shipping SBM1040CT-13 POWERMITEâ3 5000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YYWW SBM1040CT = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 100 10 Tj = +125°C Tj = +100°C 1 0.1 Tj = -25°C 0.01 Tj = +25°C 0.001 0.0001 0 100 200 300 400 500 600 IR, INSTANTANEOUS REVERSE CURRENT (mA) SBM1040CT IF, INSTANTANEOUS FORWARD CURRENT (A) NEW PRODUCT Electrical Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics, Per Element 100 Tj = +125°C 10 Tj = +100°C 1 0.1 0.01 Tj = +25°C 0.001 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics, Per Element UNDER DEVELOPMENT DS30356 Rev. 2 - 1 2 of 3 www.diodes.com SBM1040CT 40 f = 1MHz CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Single Half-Sine-Wave (JEDEC Method) TC = 115°C Total Device 30 20 10 1000 100 0 1 10 0 100 6.0 Note 1 4.5 Note 2 3.0 Note 3 0 0 25 50 75 100 125 150 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 7.5 1.5 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Notes: 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage, Per Element NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IF, DC FORWARD CURRENT (A) NEW PRODUCT 10,000 50 4 Tj = 125°C 3.5 Note 2 dc 3 2.5 2 1.5 Note 3 1 0.5 0 0 5 8 7 9 10 3 4 6 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 1. TA = TSOLDERING POINT, RqJS = 2.5°C/W, RqSA = 0°C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 85-115°C/W. UNDER DEVELOPMENT POWERMITE is a registered trademark of Microsemi Corporation. DS30356 Rev. 2 - 1 3 of 3 www.diodes.com SBM1040CT