SBQ1020 ... SBQ1045 SBQ1020 ... SBQ1045 Schottky Barrier Rectifier Diodes – Single Diode Schottky-Barrier-Gleichrichterdioden – Einzeldiode Version 2011-10-18 2.3 Nominal current Nennstrom 6.4 5.3±0.2 ±0.2 0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.2±0.4 4 2 8.3±0.4 2.3 0.8±0.1 0.75 1 2 3 4 ±0.15 ~ TO-251 I-PAK Weight approx. – Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen 2 x 2.28 Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ 20...45 V Plastic case Kunststoffgehäuse 3 ±0.2 1 6.1±0.2 Type Typ 10 A Grenz- und Kennwerte Repetitive / Surge peak reverse voltage Periodische- / Spitzen-Sperrspannung VRRM [V] / VRSM [V] Forward voltage Durchlass-Spannung VF [V] Tj = 125°C Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A IF = 5 A IF = 10 A SBQ1020 20 typ. 0.36 < 0.51 < 0.55 SBQ1030 30 typ. 0.36 < 0.51 < 0.55 SBQ1040 40 typ. 0.36 < 0.51 < 0.55 SBQ1045 45 typ. 0.36 < 0.51 < 0.55 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 80 A2s Tj TS -50...+150°C -50...+150°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 SBQ1020 ... SBQ1045 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse IR IR < 300 µA typ. 7 mA RthC < 2.5 K/W 102 120 [%] [A] Tj = 125°C 100 10 80 Tj = 25°C 1 60 40 10-1 20 IF IFAV 0 10-2 0 TC 100 50 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 0 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [mA] Tj = 150°C 102 Tj = 125°C 10 Tj = 75°C 1 IR 10-1 0 Tj = 25°C VRRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung 2 http://www.diotec.com/ © Diotec Semiconductor AG