SK1020D1 ... SK10100D1 SK1020D1 ... SK10100D1 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2006-04-06 2.3 0.5 7.0±0.2 4 2 3 1 1 5.6±0.2 Type Typ 2.5 1.2±0.2 Nominal Current Nennstrom 6.6±0.2 ±0.2 5.3 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case Kunststoffgehäuse TO-252AA D-PAK Weight approx. Gewicht ca. 1 2 3 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 4 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A SK1020D1 20 20 < 0.51 < 0.55 SK1030D1 30 30 < 0.51 < 0.55 SK1040D1 40 40 < 0.51 < 0.55 SK1045D1 45 45 < 0.51 < 0.55 SK1050D1 50 50 < 0.57 < 0.65 SK1060D1 60 60 < 0.57 < 0.65 SK1080D1 80 80 < 0.71 < 0.83 SK10100D1 100 100 < 0.71 < 0.83 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) SK1020... SK1060D1 TA = 25°C IFSM 135/150 A SK1080... SK10100D1 TA = 25°C IFSM 115/125 A TA = 25°C i2t 80 A2s Tj TS -50...+150°C -50...+175°C Peak forward surge current 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 Tj = 25°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 SK1020D1 ... SK10100D1 Characteristics Kennwerte Leakage current Sperrstrom SK1020D1... SK1045D1 Tj = 25°C Tj = 100°C VR = VRRM IR < 300 µA < 45 mA Leakage current Sperrstrom SK1050D1... Tj = 25°C SK10100D1 Tj = 100°C VR = VRRM IR < 200 µA < 25 mA RthC < 2.5 K/W Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse 102 120 [%] SK1020D1...SK1045D1 [A] 100 SK1050D1, SK1060D1 10 80 1 60 40 -1 10 20 IFAV 0 -2 10 0 TC 50 100 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 2 SK1080D1, SK10100D1 IF http://www.diotec.com/ 0 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) © Diotec Semiconductor AG