SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box Parts Table Part Ordering code Type marking Remarks SD103AWS-V-G SD103AWS-V-G-18 or SD103AWS-V-G-08 Z6 Tape and reel SD103BWS-V-G SD103BWS-V-G-18 or SD103BWS-V-G-08 Z7 Tape and reel SD103CWS-V-G SD103CWS-V-G-18 or SD103CWS-V-G-08 Z8 Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Peak reverse voltage Part Symbol Value Unit SD103AWS-V-G VRRM 40 V SD103BWS-V-G VRRM 30 V SD103CWS-V-G VRRM 20 IF Forward continuous current Single cycle surge 350 IFSM 10 µs square wave mA 2 Ptot Power dissipation V 1) 200 A 1) mW Note 1) Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range Symbol Value Unit RthJA 500 1) K/W Tj 125 °C Tstg - 55 to + 150 °C Note 1) Valid provided that electrodes are kept at ambient temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number 81142 Rev. 1.1, 13-May-11 SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max. Unit VR = 30 V SD103AWS-V-G IR 5 µA VR = 20 V SD103BWS-V-G IR 5 µA VR = 10 V SD103CWS-V-G IR 5 µA VF 370 mV 600 mV Leakage current IF = 20 mA Forward voltage drop Typ. IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns Diode capacitance Reverse recovery time Min. Typical Characteristics Tamb = 25 °C unless otherwise specified 1000 1000 IR - Reverse Current (µA) I F - Forward Current (mA) Tamb = 125 °C 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 75 °C 10 50 °C 1 25 °C 0.1 5 10 15 20 25 30 35 40 45 50 20084 Figure 1. Typical Variation of Forward Current vs. Forward Voltage VR - Reverse Voltage (V) Figure 3. Typical Variation of Reverse Current at Various Temperatures 5 100 tp = 300 ms 4 C D - Diode Capacitance (pF) I F - Forward Current (A) 100 °C 0.01 0 1.0 VF - Forward Voltage (V) 18488 100 duty cycle = 2 % 3 2 1 0 0 18489 0.5 1.0 1 1.5 VF - Forward Voltage (V) Figure 2. Typical High Current Forward Conduction Curve 10 0 18491 10 20 30 40 50 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 81142 [email protected], [email protected], [email protected] Rev. 1.1, 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G Vishay Semiconductors VR - Reverse Voltage (V) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 18492 0 100 200 Tamb - Ambient Temperature (°C) Figure 5. Blocking Voltage Deration vs. Temperature at Various Average Forward Currents 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number 81142 Rev. 1.1, 13-May-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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