SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . .. . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .400 x .400 2LFL (M106) hermetically sealed ORDER CODE SD1563 BRANDING SD1563 PIN CONNECTION DESCRIPTION The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 21.6 A Power Dissipation 875 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.2 °C/W IC PDISS THERMAL DATA RTH(j-c) September 7, 1994 Junction-Case Thermal Resistance 1/7 SD1563 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO I C = 50 mA IE = 0 mA 65 — — V BVCES I C = 50 mA VBE = 0 V 65 — — V BVCEO I C = 50 mA IB = 0 mA 28 — — V BVEBO I E = 10 mA IC = 0 mA 3.5 — — V ICES VCE = 30 V IE = 0 mA — — 7.5 mA hFE VCE = 5 V IC = 5 A 10 — 100 — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT f = 425 MHz PIN = 33.5 W VCE = 40 V 300 — — W PG ηc f = 425 MHz POUT = 300 W VCE = 40 V 9.5 — — dB f = 425 MHz PIN = 25 W VCE = 40 V 55 — — % Note: Pulse W idth = 250 µ Sec, Dut y Cyle = 10% TYPICAL PERFORMANCE POUT (W) P.W. (µSec) D.C. (%) TJ (°C max.) VCC 360 10 10 150 40 350 20 10 150 40 325 100 10 150 40 310 500 10 150 40 300 1000 10 150 40 2/7 Min. SD1563 TYPICAL PERFORMANCE (P.W. = 120µSec) POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY POWER OUTPUT vs COLLECTOR VOLTAGE EFFICIENCY vs POWER INPUT 3/7 SD1563 TYPICAL PERFORMANCE (P.W. = 120µSec) EFFICIENCY vs FREQUENCY EFFICIENCY vs COLLECTOR VOLTAGE IMPEDANCE DATA (P.W. = 120µSec) TYPICAL INPUT IMPEDANCE 4/7 TYPICAL COLLECTOR LOAD IMPEDANCE SD1563 TYPICAL PERFORMANCE (P.W. = 250µSec) POWER GAIN vs FREQUENCY POWER OUTPUT vs FLANGE TJ @ CONSTANT 125°C EFFICIENCY vs FREQUENCY THERMAL RESISTANCE vs PULSE WIDTH 5/7 SD1563 IMPEDANCE DATA (P.W. = 250µSec) TYPICAL INPUT IMPEDANCE 6/7 TYPICAL COLLECTOR LOAD IMPEDANCE SD1563 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0106 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7