STMICROELECTRONICS SD1541-09

SD1541-09
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
..
..
.
.
DESIGNED FOR HIGH POWER PULSED
IFF APPLICATIONS
450 WATTS (min.) IFF 1030/1090 MHz
7.0 dB MIN. GAIN
REFRACTORY GOLD METALLIZATION
BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
SD1541-09
BRANDING
1541-9
PIN CONNECTION
DESCRIPTION
The SD1541-09 is a gold metallized silicon NPN
planar transistor. The SD1541-09 is designedfor
applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in
a metal/ceramic package with internal input matching, resulting in improved broadband performance
and a low thermal resistance.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
Device Current
22
A
Power Dissipation
1458
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
0.12
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
November 1992
Junction-Case Thermal Resistance
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SD1541-09
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 25mA
IE = 0mA
65
—
—
V
BVCES
IC = 50mA
IB = 0mA
65
—
—
V
BVEBO
IE = 10mA
IC = 0mA
3.5
—
—
V
ICES
VCE = 50V
IE = 0mA
—
—
25
mA
hFE
VCE = 5V
IC = .25A
5
—
200
—
DYNAMIC
Symbol
Value
Test Conditions
Typ.
Max.
Unit
POUT
f = 1090 MHz
PIN = 90 W
VCE = 50 V
450
—
—
W
GP
f = 1090 MHz
PIN = 90 W
VCE = 50 V
7.0
—
—
dB
Note:
Pulse W idth
=
10 µ Sec, Duty Cycle
=
1%
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
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Min.
SD1541-09
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
1030 MHz
ZIN (Ω)
1.6 + j 5.1
1.1 − j 2.0
1090 MHz
2.5 + j 4.7
1.2 − j 1.2
FREQ.
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
ZCL (Ω)
TEST CIRCUIT LAYOUT
C1
C2
C3
C4
C5
:
:
:
:
:
.4 - 2.5pF Johanson Gigatrim
100pF Chip Capacitor
.01µfD CK05BX103K
1000µfD Electrolytic 63V
100pF Chip Capacitor
L1
L2
: 1/2 Turn .026” Diameter Wire
Loop = .170” Width x .320” Height
: 1 Turn .026” Diameter Wire I.D. .130”
All Dimensions are in Inches
Board Er = 10.2, Height .025”
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SD1541-09
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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