SD1541-09 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . .. .. . . DESIGNED FOR HIGH POWER PULSED IFF APPLICATIONS 450 WATTS (min.) IFF 1030/1090 MHz 7.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1541-09 BRANDING 1541-9 PIN CONNECTION DESCRIPTION The SD1541-09 is a gold metallized silicon NPN planar transistor. The SD1541-09 is designedfor applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in a metal/ceramic package with internal input matching, resulting in improved broadband performance and a low thermal resistance. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 22 A Power Dissipation 1458 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.12 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/4 SD1541-09 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0mA 65 — — V BVCES IC = 50mA IB = 0mA 65 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V ICES VCE = 50V IE = 0mA — — 25 mA hFE VCE = 5V IC = .25A 5 — 200 — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT f = 1090 MHz PIN = 90 W VCE = 50 V 450 — — W GP f = 1090 MHz PIN = 90 W VCE = 50 V 7.0 — — dB Note: Pulse W idth = 10 µ Sec, Duty Cycle = 1% TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 Min. SD1541-09 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN 1030 MHz ZIN (Ω) 1.6 + j 5.1 1.1 − j 2.0 1090 MHz 2.5 + j 4.7 1.2 − j 1.2 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL ZCL (Ω) TEST CIRCUIT LAYOUT C1 C2 C3 C4 C5 : : : : : .4 - 2.5pF Johanson Gigatrim 100pF Chip Capacitor .01µfD CK05BX103K 1000µfD Electrolytic 63V 100pF Chip Capacitor L1 L2 : 1/2 Turn .026” Diameter Wire Loop = .170” Width x .320” Height : 1 Turn .026” Diameter Wire I.D. .130” All Dimensions are in Inches Board Er = 10.2, Height .025” 3/4 SD1541-09 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4