SEOUL SFAF3L

SPECIFICATION
ITEM
FULL COLOR SIDE VIEW LED
MODEL
SFAF3L
CUSTOMER
Customer
Approved by Approved by Approved by
/
/
/
Supplier
Drawn by
Checked by
Approved by
/
/
/
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
Contents
1.
Features
02
2.
Application
02
3.
Absolute Maximum Ratings
03
4.
Electro-Optical Characteristics
03
5.
Rank of SFAF3L
04
6.
Rank Name Table
05
7.
Reliability
09
8.
Precautions
10
9.
Soldering Profile
11
10. Outline Dimension
12
11. Reel Packing Structure
13
12. History
14
SSC-QP-7-03-44(갑)
1
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
1. Features
Package: SMT Solderability
Dimension : 7.0 × 2.0 × 1.9 (mm)
Low Thermal Resistance
RoHS Compliant, Lead Free
6-Pin (R, G, B separate) type
InGaAlP(Red) / InGaN(Green) / InGaN(Blue)
SFAF3L is Very Useful Side View LED in Back Light Unit Application
Long Life Time (MTTF*1 : > 15,000HR @ Ta=25℃, If=20(R), 40(G), 20(B) mA)
2. Applications
Flat Backlighting (LCD, Display)
Monitor, PDA, CNS, Notebook
Coupling into Light Guide Panel
Illuminations
*1 MTTF = Mean Time To Failure. Failure means that Luminous intensity degrades to 50% of initial value.
SSC-QP-7-03-44(갑)
2
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
3. Absolute Maximum Ratings
Parameter
Symbol
Power Dissipation
Forward Current
Peak Forward Current
(Ta = 25°C)
Value
Unit
RED
GREEN
BLUE
Pd*1
72
204
102
mW
IF
30
60
30
mA
IFM*2
100
180
100
mA
Reverse Voltage
VR
5
Operating Temperature
Topr
-40 ~ +85
°
Storage Temperature
Tstg
-40 ~ +100
°
V
C
C
*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. The value for one LED
device.(Single color)
*2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
4. Electro-Optical Characteristics
Item
(Ta = 25°C)
Symbol
Condition
Min
Typ
Max
1.8
-
2.4
VF
IF = 20 mA
IF = 40 mA
IF = 20 mA
2.8
-
3.6
2.8
-
3.4
RED
GREEN
Forward Voltage
BLUE
IR
Reverse Current
RED
*1
Luminous Intensity
GREEN
IV
BLUE
Viewing Angle
2θ1/2
*2
GREEN
Thermal Resistance
GREEN
BLUE
= 20 mA
500
-
700
= 40 mA
2050
-
2500
= 20 mA
170
-
230
mcd
120
= 60 mA
˚
-
625
λd
IF = 40 mA
525
-
535
455
-
460
-
330
-
Rth j-a
IF = 20 mA
IF = 20 mA
IF = 40 mA
-
310
-
IF = 20 mA
-
310
-
RED
*3
µA
620
BLUE
V
50
=5V
IF = 20 mA
RED
Dominant Wavelength
VR
IF
IF
IF
IF
Unit
nm
°
C/W
*1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Thermal resistance from LED junction to the specific environment
Note : All measurements were made under the standardized environment of Seoul Semiconductor.
SSC-QP-7-03-44(갑)
3
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
5. Rank of SFAF3L
▣Luminous Intensity[Iv]
IV Rank
Name
RED
MIN
500
550
600
650
MAX
550
600
650
700
Mix Rank
Name
R
G
B
N1
N2
N3
N4
N5
N6
O1
O2
O3
O4
O5
O6
N
N
N
N
N
N
O
O
O
O
O
O
N
N
O
O
P
P
N
N
O
O
P
P
N
O
N
O
N
O
N
O
N
O
N
O
RN
RO
RP
RQ
GREEN
IV Rank
Name
MIN
2050
2200
2350
GN
GO
GP
IV Rank
Name
MAX
2200
2350
2500
BLUE
BN
BO
MIN
170
200
MAX
200
230
Mix Rank
Name
R
G
B
P1
P2
P3
P4
P5
P6
Q1
Q2
Q3
Q4
Q5
Q6
P
P
P
P
P
P
Q
Q
Q
Q
Q
Q
N
N
O
O
P
P
N
N
O
O
P
P
N
O
N
O
N
O
N
O
N
O
N
O
▣Dominant Wavelength[λd]
DW Rank
Name
RED
MIN
620.0
622.5
MAX
622.5
625.0
Mix Rank
Name
R
G
B
DW1
DW2
DW3
DW4
A
A
A
A
A
B
C
D
A
A
A
A
RA
RB
GREEN
DW Rank
Name
MIN
525.3
527.5
530.0
532.5
GA
GB
GC
GD
DW Rank
Name
MAX
527.5
530.0
532.5
535.0
BLUE
BA
MIN
455.0
MAX
460.0
Mix Rank
Name
R
G
B
DW5
DW6
DW7
DW8
B
B
B
B
A
B
C
D
A
A
A
A
▣Forward Voltage
DW Rank
Name
Z
SSC-QP-7-03-44(갑)
RED
MIN
1.8
GREEN
MAX
2.4
MIN
2.8
BLUE
MAX
3.6
4
MIN
2.8
MAX
3.4
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
6. Rank Name Table
X1
Max Vf
X2
Mix λd
X3
Mix Iv
Label
Name
Code
Name
Label
Name
Code
Name
Label
Name
Code
Name
Label
Name
Code
Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
ZDW1N1
ZDW1N2
ZDW1N3
ZDW1N4
ZDW1N5
ZDW1N6
ZDW1O1
ZDW1O2
ZDW1O3
ZDW1O4
ZDW1O5
ZDW1O6
ZDW1P1
ZDW1P2
ZDW1P3
ZDW1P4
ZDW1P5
ZDW1P6
ZDW1Q1
ZDW1Q2
ZDW1Q3
ZDW1Q4
ZDW1Q5
ZDW1Q6
ZDW2N1
ZDW2N2
ZDW2N3
ZDW2N4
ZDW2N5
ZDW2N6
ZDW2O1
ZDW2O2
ZDW2O3
ZDW2O4
ZDW2O5
ZDW2O6
ZDW2P1
ZDW2P2
ZDW2P3
ZDW2P4
ZDW2P5
ZDW2P6
ZDW2Q1
ZDW2Q2
ZDW2Q3
ZDW2Q4
ZDW2Q5
ZDW2Q6
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
ZDW3N1
ZDW3N2
ZDW3N3
ZDW3N4
ZDW3N5
ZDW3N6
ZDW3O1
ZDW3O2
ZDW3O3
ZDW3O4
ZDW3O5
ZDW3O6
ZDW3P1
ZDW3P2
ZDW3P3
ZDW3P4
ZDW3P5
ZDW3P6
ZDW3Q1
ZDW3Q2
ZDW3Q3
ZDW3Q4
ZDW3Q5
ZDW3Q6
ZDW4N1
ZDW4N2
ZDW4N3
ZDW4N4
ZDW4N5
ZDW4N6
ZDW4O1
ZDW4O2
ZDW4O3
ZDW4O4
ZDW4O5
ZDW4O6
ZDW4P1
ZDW4P2
ZDW4P3
ZDW4P4
ZDW4P5
ZDW4P6
ZDW4Q1
ZDW4Q2
ZDW4Q3
ZDW4Q4
ZDW4Q5
ZDW4Q6
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
ZDW5N1
ZDW5N2
ZDW5N3
ZDW5N4
ZDW5N5
ZDW5N6
ZDW5O1
ZDW5O2
ZDW5O3
ZDW5O4
ZDW5O5
ZDW5O6
ZDW5P1
ZDW5P2
ZDW5P3
ZDW5P4
ZDW5P5
ZDW5P6
ZDW5Q1
ZDW5Q2
ZDW5Q3
ZDW5Q4
ZDW5Q5
ZDW5Q6
ZDW6N1
ZDW6N2
ZDW6N3
ZDW6N4
ZDW6N5
ZDW6N6
ZDW6O1
ZDW6O2
ZDW6O3
ZDW6O4
ZDW6O5
ZDW6O6
ZDW6P1
ZDW6P2
ZDW6P3
ZDW6P4
ZDW6P5
ZDW6P6
ZDW6Q1
ZDW6Q2
ZDW6Q3
ZDW6Q4
ZDW6Q5
ZDW6Q6
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
ZDW7N1
ZDW7N2
ZDW7N3
ZDW7N4
ZDW7N5
ZDW7N6
ZDW7O1
ZDW7O2
ZDW7O3
ZDW7O4
ZDW7O5
ZDW7O6
ZDW7P1
ZDW7P2
ZDW7P3
ZDW7P4
ZDW7P5
ZDW7P6
ZDW7Q1
ZDW7Q2
ZDW7Q3
ZDW7Q4
ZDW7Q5
ZDW7Q6
ZDW8N1
ZDW8N2
ZDW8N3
ZDW8N4
ZDW8N5
ZDW8N6
ZDW8O1
ZDW8O2
ZDW8O3
ZDW8O4
ZDW8O5
ZDW8O6
ZDW8P1
ZDW8P2
ZDW8P3
ZDW8P4
ZDW8P5
ZDW8P6
ZDW8Q1
ZDW8Q2
ZDW8Q3
ZDW8Q4
ZDW8Q5
ZDW8Q6
SSC-QP-7-03-44(갑)
5
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
7. Characteristic Diagram
Forward Current vs. Forward Voltage
Intensity vs. Forward Current [Red, Blue ]
100
Ta = 25 C
Relative Luminous Intensity IV / IV (20mA) [Rel.]
Forward Current [mA]
O
10
RED
GREEN
BLUE
1
1.5
2.0
2.5
3.0
3.5
Forward Voltage [V]
1.6
1.4
Blue
Red
1.2
1.0
0.8
0.6
0.4
0.2
5
10
15
20
25
30
Forward Current [mA]
C) [Rel.]
Intensity vs. Ambient Temperature
o
1.4
1.2
1.2
1.1
Green
Relative Luminous Intensity IV / IV (25
Relative Luminous Intensity IV / IV (40mA) [Rel.]
Intensity vs. Forward Current [Green ]
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
60
0.9
Red
0.8
0.7
0.6
10
20
30
40
50
60
70
o
Forward Current [mA]
SSC-QP-7-03-44(갑)
Green
Blue
1.0
Ambient Temperature ( C)
6
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
Wavelength vs. Forward Current [Red, Blue ]
Wavelength vs. Forward Current [Green ]
6
4
Dominant wavelength Shift [nm]
Dominant wavelength Shift [nm]
6
Blue
Red
2
0
-2
0
10
20
Green
2
0
-2
40
30
4
0
10
20
Forward Current [mA]
30
40
50
60
70
Forward Current [mA]
Spectrum
Dominant Wavelength vs. Ambient Temperature
O
Ta = 25 C
IF = 20 mA
400
500
600
Dominant wavelength Shift [nm]
Intensity [%]
6
700
Wavelength [nm]
Red
4
Blue
Green
2
0
-2
10
20
30
40
50
60
70
o
Ambient Temperature ( C)
SSC-QP-7-03-44(갑)
7
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
Radiation Diagram
Intensity
Ta = 25 C
O
x axis
y axis
1.0
0.5
0.0
-100 -80 -60 -40 -20
0
20
40
60
80 100
Theta
SSC-QP-7-03-44(갑)
8
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
8. Reliability
(1) TEST ITEMS AND RESULTS
Note
Number of
Damaged
Reference
Ta = 25°C; IF = 20 mA /chip
1000 hr
0/20
EIAJ ED-4701
100 101
Ta = 60°C; RH = 90%,
IF = 20 mA /chip
1000 hr
0/20
EIAJ ED-4701
100 102
20 cycle
0/50
EIAJ ED-4701
300 307
TEST ITEM
Test conditions
Life Test
High Humidity Heat Life Test
-30°C ~ 85°C
Thermal Shock
(30 min) (30 min)
High Temperature Life Test
Ta = 85°C; IF = 15 mA /chip
1000 hr
0/20
-
Low Temperature Life Test
Ta = - 40°C; IF = 20 mA /chip
1000 hr
0/20
-
High Temperature Storage
Ta = 100°C
1000 hr
0/50
Low Temperature Storage
Ta = - 40°C
1000 hr
0/50
Ta = 60°C; RH = 90%
1000 hr
0/20
1 time
0/50
Humidity Heat Storage
ESD
Human Body Mode : 1 kV
EIAJ ED-4701
200 201
EIAJ ED-4701
200 202
MIL-STD
888E
(2) CRITERIA FOR JUDGING THE DAMAGE
Item
Symbol
Forward Voltage
VF
Reverse Current
IR
Luminous Intensity
IV
U.S.L. : Upper Standard Level,
SSC-QP-7-03-44(갑)
Test Condition
IF = 20 mA/chip
VR = 5 V
IF = 20 mA/chip
Criteria for Judgment
Min.
Max.
-
U.S.L × 1.2
-
U.S.L × 2.0
L.S.L × 0.7
-
L.S.L. : Lower Standard Level
9
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
9. Precautions
(1) Storage conditions
Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption.
a. Keep it at a temperature in the range from 5°C to 30°C and at a humidity of less than 60% RH.
In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas.
(2) After opening the package
When soldering, this could result in a decrease of the photoelectric effect or light intensity.
a. Soldering should be done right after mounting the product.
b. Keep the temperature in the range from 5°C to 40°C and the humidity at less than 30%.
Soldering should be done within 7 days after opening the desiccant package.
If the product has been exposed for more than 7 days after opening the package or the indicating color
of the desiccator changes, the product must be baked at a temperature between 60°C and 65°C for 10 to
12 hours.
An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry
atmosphere.
(3) Precautions for use
Any external mechanical force or excessive vibration should not be applied to the product during cooling
after soldering, and it is preferable to avoid rapid cooling.
The product should not be mounted on a distorted part of PCB.
Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and
surge damage, and all devices and equipments must be grounded to the earth.
(4) Miscellaneous
Radiation resistance is not considered.
When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used
and IPA(Isopropyl Alcohol) must be used.
When using the product, operating current should be settled in consideration of the maximum ambient
temperature.
Its appearance or specification for improvement is subject to change without notice.
SSC-QP-7-03-44(갑)
10
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
10. Soldering Profile
The LED can be soldered in place using the reflow soldering method.
(1)
Lead solder
Preliminary heating to be at maximum 210°C for maximum 2 minutes.
Soldering heat to be at maximum 240°C for maximum 10 seconds.
o
Device Surface Temperature [ C]
280
240
200
160
120
80
40
0
0
15
30
45
60
75
90
105 120 135 150 165 180 195
Soldering Times [sec]
(2)
Lead-free solder
Preliminary heating to be at maximum 220°C for maximum 2 minutes.
Soldering heat to be at maximum 260°C for maximum 10 seconds.
o
Device Surface Temperature [ C]
280
240
200
160
120
80
40
0
0
15
30
45
60
75
90
105
120 135 150
165
180 195
Soldering Times [sec]
(3)
Hand Soldering conditions
Not more than 5 seconds @MAX 300°C, under Soldering iron.
SSC-QP-7-03-44(갑)
11
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
11. Outline Dimension
( Tolerance : ±0.2, Unit : mm )
Recommended solder pad
1.65
7.00
0.4
1.0
1.1
0.3
0.5
0.8
0.8
0.5
SSC-QP-7-03-44(갑)
12
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
13. Reel Packing Structure
Reel
Aluminum Vinyl Bag
Desiccant
Humidity indicator
Barcode Label
RANK :
Outer Box Structure
XXX
QUANTITY : XXXX
LOT NUMBER : XXXXXXXX
SSC PART NUMBER : XXXXXXXX
SEOUL
TUV
142 (mm)
MADE IN KOREA
Acriche
SFAF3L
Material : Paper(SW3B(B))
RoHS
245 (mm)
SIZE (mm)
c
a
b
245 220 142
7inch
245 220 80
TYPE
Semiconductor EcoLight
220 (mm)
Lot Number
The lot number is composed of the following characters;
SFAF3L ○□□◎◎ ◇◇◇
Symbol
Meaning
○
Year
□□
Month
◎◎
Day
◇◇◇
Number
SSC-QP-7-03-44(갑)
Example
8 for 2008, 9 for 2009 ‥‥
01 for Jan., 02 for Feb., ‥‥ 12 for Dec.
01, 02, 03, 04, 05, ‥‥ 27, 28, 29, 30, 31
001, 002, 003, 004, 005, 006, 007 ‥‥
13
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
SFAF3L
13. History
Rev. No.
1.00
Contents
- The institution of New Spec.
Date
2008.06.03
Published by
SEOUL SEMICONDUCTOR CO., LTD.
http://www.seoulsemicon.com
148-29, Gasan-Dong, Geumcheon-Gu,
Seoul, 153-801. South Korea
© All Right Reserved.
SSC-QP-7-03-44(갑)
14
SEOUL SEMICONDUCTOR CO., LTD.