SEOUL SWAF3L

SPECIFICATION
ITEM
WHITE SIDE VIEW LED
MODEL
SWAF3L
CUSTOMER
Customer
Approved by Approved by Approved by
/
/
/
Supplier
Drawn by
Checked by
Approved by
/
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SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
Contents
1.
Features
02
2.
Application
02
3.
Absolute Maximum Ratings
03
4.
Electro-Optical Characteristics
03
5.
CIE Chromaticity Diagram
04
6.
Characteristic Diagram
05
7.
Reliability
08
8.
Precautions
09
9.
Soldering Profile
10
10. Outline Dimension
11
11. History
12
SSC-QP-7-03-44(갑)
1
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
1. Features
Package: SMT Solderability
Dimension : 7.0 × 2.0 × 1.9 (mm)
Low Thermal Resistance
RoHS Compliant, Lead Free
6-Pin (Blue separate) type
Own Patent Reserved
SWAF3L is Very Useful Side View LED in Back Light Unit Application
2. Applications
Flat Backlighting (LCD, Display)
Camera, PDA, CNS, Notebook
Coupling into Light Guide Panel
Illuminations
SSC-QP-7-03-44(갑)
2
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
3. Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol
Value
Unit
Power Dissipation
Pd*1
280
mW
IF
80
mA
IFM*2
200
mA
V
Forward Current
Peak Forward Current
Reverse Voltage
VR
5
Operating Temperature
Topr
-30 ~ +85
°
Storage Temperature
Tstg
-40 ~ +100
°
Thermal Resistance
(junction to solder)
Junction Temperature
*1
*2
RΘj-s
70
Tj max
125
C
C
°
C/W
°
C
Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
4. Electro-Optical Characteristics
(Ta = 25°C)
Item
Symbol
Condition
Min
Typ
Max
Unit
IF = 20 mA/CHIP
VR = 5 V
IF = 20 mA/CHIP
2.9
-
3.2
-
3.6
100
Thermal Resistance(Junction to solder)
VF
IR
RΘj-s
V
µA
℃/W
Forward Voltage
Reverse Current
*1
Viewing Angle
Color Coordinates
Life Time*4
*3
Rank M1
4100
-
4400
Rank M4
4400
-
4700
4700
-
5000
Rank N0
5000
-
5300
Rank N3
5300
-
5600
0.264
0.248
0.287
0.276
0.307
0.294
120
15000 hrs
Rank M7
Luminous Intensity
*2
70
IV
IF = 60 mA
2θ1/2
IF = 60 mA
x
Rank b
y
x
Rank e
IF = 60 mA
y
x
Rank f
y
Ta =25℃, IF=20 mA/CHIP
mcd
˚
0.296
0.295
0.311
0.315
0.330
0.339
-
-
*1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Measurement Uncertainty of the Color Coordinates is ±0.01
*4 Estimated time to 50% degradation of initial luminous intensity.(A chip = 20mA)
*
Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul
Semiconductor.
SSC-QP-7-03-44(갑)
3
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
5. CIE Chromaticity Diagram
0.9
0.7
y Coord.
0.6
0.5
0.4
0.3
0.2
0.34
0.32
y Coord.
0.8
0.36
520
515 525530
535
540
510
545
550
555
505
560
565
570
500
575
580
585
590
495
595
600
610
620
490
630
830
0.0
0.0
480
475
470
460
0.1
0.30
e
0.28
b
0.26
485
0.1
f
0.24
0.2
0.3
0.4
0.5
0.6
0.7
0.22
0.24
0.8
0.26
0.28
x Coor d.
0.30
0.32
0.34
0.36
x Coor d.
Luminous Intensity
Ranking by Color Coordinates
Ranking by Luminous Intensity
b
e
f
RANK
Min
Max
Unit
M1
4100
4400
√
√
M4
4400
4700
√
√
M7
4700
5000
√
√
√
N0
5000
5300
√
√
N3
5300
5600
√
√
mcd
The Checked ranks are available
(IF = 60 mA, Ta = 25°C)
Color Rank
b
e
f
x
y
x
y
x
y
0.264
0.280
0.296
0.287
0.267
0.248
0.276
0.295
0.296
0.311
0.307
0.287
0.276
0.294
0.315
0.295
0.311
0.330
0.330
0.307
0.294
0.318
0.339
0.315
SSC-QP-7-03-44(갑)
4
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
6. Characteristic Diagram
Forward Current vs. Forward Voltage
Intensity vs. Forward Current
100
Ta = 25 C
1.4
Intensity ratio [mcd]
Forward Current [mA]
O
10
1
Ta = 25 C
O
1.2
1.0
0.8
0.6
0.4
0.2
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
20
Forward Voltage [ V]
40
60
80
100
Forward Current [mA]
Forward Current vs. Ambient Temperature
Radiation Diagram
( Tj max = 125 °C )
80
1.0
Ta = 25 C
O
x axis
y axis
60
50
Intensity
Forward current [mA]
70
40
30
20
0.5
10
0
-3 0 -1 5
0
15
30
45
60
75
y
90
o
A m b ie n t te m p e ra tu re [ C ]
x
0.0
-100 -80 -60 -40 -20
0
20
40
60
80 100
Theta
SSC-QP-7-03-44(갑)
5
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
Color Coordinate vs. Forward Current
Spectrum
0.30
Ta = 25 C
90 mA
O
Ta = 25 C
IF = 20 mA
Intensity [%]
y Coord.
O
0.29
10 mA
0.28
0.280
0.285
0.290
0.295
0.300
400
x Coord.
500
600
700
800
Wavelength [nm]
Forward Voltage vs. Ambient Temperature
Color Coordinate vs. Ambient Temperature
0.300
1.08
IF = 60 mA
IF = 60 mA
0.295
1.06
o
-30 C
1.04
y Coord.
O
VF / VF [25 C]
o
25 C
1.02
0.290
0.285
1.00
0.98
0.280
0.96
-30 -15
0
15
30
45
60
75
0.280 0.285 0.290 0.295 0.300 0.305 0.310
90
o
x Coord.
Ambient Temperature [ C]
SSC-QP-7-03-44(갑)
o
85 C
6
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
Relative Luminosity vs. Ambient Temperature
Allowable Forward Current vs. Duty Ratio
1.1
Allowable Forward Current [mA]
220
o
Iv / Iv [25 C]
1.0
0.9
0.8
0.7
-30 -15
0
15
30 45 60
75 90
Ta = 25 C
O
200
180
160
140
120
100
80
60
40
20
1
o
Ambient Temperature [ C]
10
* Pulse width
SSC-QP-7-03-44(갑)
100
Duty Ratio [%]
7
TW ≤ 0.1ms
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
7. Reliability
(1) TEST ITEMS AND RESULTS
Note
Number of
Damaged
Ta = 25°C; IF = 80 mA
1,000 hr
0/20
Ta = 60°C; RH = 90%, IF = 60 mA
1,000 hr
-30°C ~ 85°C
20 cycle
0/50
Ta = 85°C; IF = 60mA
1,000 hr
0/20
-
Low Temperature Life Test
Ta = - 40°C; IF = 80 mA
1,000 hr
0/20
-
High Temperature Storage
Ta = 100°C
1,000 hr
0/50
Low Temperature Storage
Ta = - 40°C
1,000 hr
0/50
Ta = 60°C; RH = 90%
1,000 hr
0/20
1 time
0/50
TEST ITEM
Test conditions
Life Test 1
High Humidity Heat Life Test
Thermal Shock
(30 min) (30 min)
High Temperature Life Test*1
Humidity Heat Storage
ESD
*1
Human Body Mode : 1 kV
Reference
EIAJ ED-4701
100 101
EIAJ ED-4701
100 102
EIAJ ED-4701
300 307
EIAJ ED-4701
200 201
EIAJ ED-4701
200 202
MIL-STD
888E
TEST CONDITION : PCB (Material : FR-4, Thickness : 1.6T)
-Operating Condition : RΘ = 140 ºC/W.
(2) CRITERIA FOR JUDGING THE DAMAGE
Item
Symbol
Test Condition
Criteria for Judgment
Min.
Max.
Forward Voltage
VF
IF = 60 mA
-
U.S.L × 1.2
Reverse Current
IR
VR = 5 V
-
U.S.L × 2.0
Luminous Intensity
IV
IF = 60 mA
L.S.L × 0.7
-
U.S.L. : Upper Standard Level,
SSC-QP-7-03-44(갑)
L.S.L. : Lower Standard Level
8
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
8. Precautions
(1) Storage conditions
Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption.
a. Keep it at a temperature in the range from 5°C to 30°C and at a humidity of less than 60% RH.
In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas.
(2) After opening the package
When soldering, this could result in a decrease of the photoelectric effect or light intensity.
a. Soldering should be done right after mounting the product.
b. Keep the temperature in the range from 5°C to 40°C and the humidity at less than 30%.
Soldering should be done within 7 days after opening the desiccant package.
If the product has been exposed for more than 7 days after opening the package or the indicating color
of the desiccator changes, the product must be baked at a temperature between 60°C and 65°C for 10 to
12 hours.
An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry
atmosphere.
(3) Precautions for use
Any external mechanical force or excessive vibration should not be applied to the product during cooling
after soldering, and it is preferable to avoid rapid cooling.
The product should not be mounted on a distorted part of PCB.
Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and
surge damage, and all devices and equipments must be grounded to the earth.
(4) Miscellaneous
Radiation resistance is not considered.
When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used
and IPA(Isopropyl Alcohol) must be used.
When using the product, operating current should be settled in consideration of the maximum ambient
temperature.
Its appearance or specification for improvement is subject to change without notice.
SSC-QP-7-03-44(갑)
9
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
9. Soldering Profile
The LED can be soldered in place using the reflow soldering method.
(1)
Lead solder
Preliminary heating to be at maximum 210°C for maximum 2 minutes.
Soldering heat to be at maximum 240°C for maximum 10 seconds.
o
Device Surface Temperature [ C]
280
240
200
160
120
80
40
0
0
15
30
45
60
75
90
105 120 135 150 165 180 195
Soldering Times [sec]
(2)
Lead-free solder
Preliminary heating to be at maximum 220°C for maximum 2 minutes.
Soldering heat to be at maximum 260°C for maximum 10 seconds.
o
Device Surface Temperature [ C]
280
240
200
160
120
80
40
0
0
15
30
45
60
75
90
105
120 135 150
165
180 195
Soldering Times [sec]
(3)
Hand Soldering conditions
Not more than 5 seconds @MAX 300°C, under Soldering iron.
SSC-QP-7-03-44(갑)
10
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
10. Outline Dimension
( Tolerance : ±0.2, Unit : mm )
2.00
2.00
0.50
1.55
0.50
1.90
1.90
0.15
7.00
Recommended solder pad
↑ Lighting Direction ↑
7.00
1.65
⑥ ⑤
0.4
④ ③ ② ①
1.0
1.1
0.3
0.5
0.8
0.8
0.5
SSC-QP-7-03-44(갑)
11
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 5.00
SWAF3L
13. History
Rev. No.
1.00
Contents
- The institution of New Spec.
Date
2008. 06. 03
Published by
SEOUL SEMICONDUCTOR CO., LTD.
http://www.seoulsemicon.com
148-29, Gasan-Dong, Geumcheon-Gu,
Seoul, 153-801. South Korea
© All Right Reserved.
SSC-QP-7-03-44(갑)
12
SEOUL SEMICONDUCTOR CO., LTD.