SEMIKRON SK50GD066ET

SK50GD066ET
Absolute Maximum Ratings
Symbol Conditions
IGBT
-56
7
!
7 0 *:2 3
!;<
0 12 34 0 12 3
IGBT Module
SK50GD066ET
9++
-
2:
$
0 :+ 3
/2
$
*++
$
= 1+
-
!;<0 1 !
- 0 >9+ -? -"5 @ 1+ -?
-56 A 9++ -
Units
0 12 3
-"56
SEMITOP® 3
Values
7
0 *12 3
9
B
0 12 3
29
$
0 :+ 3
//
$
9+
$
Inverse Diode
!&
!&;<
7
0 *:2 3
!&;<0 1 !&
Module
!;<6
Target Data
)7
C/+ ... D*2+
3
C/+ ... D*12
3
12++
-
-
Features
!" #
$% # &'
! ( Typical Applications
!) *+ ,-$
#. / ,'
$
$4 * .
Characteristics
Symbol Conditions
IGBT
-"5
-"5 0 -54 ! 0 +4E $
!56
-"5 0 + -4 -5 0 -56
!"56
-5 0 + -4 -"5 0 1+ -
0 12 34 min.
typ.
max.
2
24E
942
7 0 12 3
7
5
-5
-"5 0 *2 ! 0 2+ $4 -"5 0 *2 -
-5 0 124 -"5 0 + -
0 *12 3
$
7 0 12 3
9++
;" 0 *1 G
;" 0 *1 G
5
;7C
!"
$
$
7
0 12 3
+4F
*4*
7
0 *2+ 3
+4E
*
-
**
*2
G
*:
1*
G
-
7 0 123
7
0 *2+3
7
0 123
).
*4/2
*4E2
7 0 *123
).
*492
14+2
0 * <H
5
$
7 0 *12 3
-5+
Units
- 0 >++!0 2+$
7 0 *2+ 3
-"50=*2-
-
-
>4*
+41
&
&
+4+F>
&
*42/
I
*429
I
*4>
JK'
GD-ET
1
05-09-2007 DIL
© by SEMIKRON
SK50GD066ET
Characteristics
Symbol Conditions
Inverse Diode
-& 0 -5
!& 0 2+ $? -"5 0 + -
-&+
SEMITOP 3
IGBT Module
SK50GD066ET
!;;<
L
!& 0 2+ $
5
-0 >++-
;7C
<
,
typ.
7
0 12 3
).
*42
7
0 *2+ 3
).
*42
7 0 12 3
&
®
min.
max.
-
*
*4*
-
7 0 *2+ 3
+4F
*
-
7
0 12 3
*+
*1
G
7
0 *2+ 3
*1
*/
G
7 0 *2+ 3
$
B
I
*4:
Units
1412
JK'
142
(
>+
/F>=2M
G
Temperature sensor
;*++
0*++3
;1202,G
Target Data
Features
!" #
$% # &'
! ( This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
!) *+ ,-$
#. / ,'
GD-ET
2
05-09-2007 DIL
© by SEMIKRON
SK50GD066ET
21 6 4 N4 O 1
3
21
"C5
05-09-2007 DIL
© by SEMIKRON