SK50GD066ET Absolute Maximum Ratings Symbol Conditions IGBT -56 7 ! 7 0 *:2 3 !;< 0 12 34 0 12 3 IGBT Module SK50GD066ET 9++ - 2: $ 0 :+ 3 /2 $ *++ $ = 1+ - !;<0 1 ! - 0 >9+ -? -"5 @ 1+ -? -56 A 9++ - Units 0 12 3 -"56 SEMITOP® 3 Values 7 0 *12 3 9 B 0 12 3 29 $ 0 :+ 3 // $ 9+ $ Inverse Diode !& !&;< 7 0 *:2 3 !&;<0 1 !& Module !;<6 Target Data )7 C/+ ... D*2+ 3 C/+ ... D*12 3 12++ - - Features !" # $% # &' ! ( Typical Applications !) *+ ,-$ #. / ,' $ $4 * . Characteristics Symbol Conditions IGBT -"5 -"5 0 -54 ! 0 +4E $ !56 -"5 0 + -4 -5 0 -56 !"56 -5 0 + -4 -"5 0 1+ - 0 12 34 min. typ. max. 2 24E 942 7 0 12 3 7 5 -5 -"5 0 *2 ! 0 2+ $4 -"5 0 *2 - -5 0 124 -"5 0 + - 0 *12 3 $ 7 0 12 3 9++ ;" 0 *1 G ;" 0 *1 G 5 ;7C !" $ $ 7 0 12 3 +4F *4* 7 0 *2+ 3 +4E * - ** *2 G *: 1* G - 7 0 123 7 0 *2+3 7 0 123 ). *4/2 *4E2 7 0 *123 ). *492 14+2 0 * <H 5 $ 7 0 *12 3 -5+ Units - 0 >++!0 2+$ 7 0 *2+ 3 -"50=*2- - - >4* +41 & & +4+F> & *42/ I *429 I *4> JK' GD-ET 1 05-09-2007 DIL © by SEMIKRON SK50GD066ET Characteristics Symbol Conditions Inverse Diode -& 0 -5 !& 0 2+ $? -"5 0 + - -&+ SEMITOP 3 IGBT Module SK50GD066ET !;;< L !& 0 2+ $ 5 -0 >++- ;7C < , typ. 7 0 12 3 ). *42 7 0 *2+ 3 ). *42 7 0 12 3 & ® min. max. - * *4* - 7 0 *2+ 3 +4F * - 7 0 12 3 *+ *1 G 7 0 *2+ 3 *1 */ G 7 0 *2+ 3 $ B I *4: Units 1412 JK' 142 ( >+ /F>=2M G Temperature sensor ;*++ 0*++3 ;1202,G Target Data Features !" # $% # &' ! ( This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications !) *+ ,-$ #. / ,' GD-ET 2 05-09-2007 DIL © by SEMIKRON SK50GD066ET 21 6 4 N4 O 1 3 21 "C5 05-09-2007 DIL © by SEMIKRON