SEMIKRON SK101GB065TF

SK101GB065TF
% , -. /0 Absolute Maximum Ratings
Symbol Conditions
IGBT
*1&
%2 , -. /
#
%2 , 5-. /
#89
344
*
534
6
% , 74 /
544
6
:44
6
< -4
*
%2 , 5-. /
54
@
% , -. /
A.
6
% , 74 /
:4
6
34
6
#89, - #
IGBT Module
SK101GB065TF
* , :44 *= *;1 > -4 *=
*1& ? 344 *
Units
% , -. /
*;1&
SEMITOP® 3
Values
Inverse Diode
#+
%2 , 5.4 /
#+89
#+89, - #+
Module
#89&
Target Data
%'2
BA4 CCC D5.4
/
%
BA4 CCC D5-.
/
-.44
*
*
Features
!
" ! # $% Typical Applications
&
#'
&
()&
Remarks
*+ , ' '
6
60 5 C
% , -. /0 Characteristics
Symbol Conditions
IGBT
*;1
*;1 , *10 # , : 6
#1&
*;1 , 344 *0 *1 , *1&
%2 , -. /
#;1&
*1 , 4 *0 *;1 , -4 *
%2 , -. /
*14
1
*1
*;1 , 5. *
1
8; , 30- E
1
82B
#;%
Units
:
A
.
*
40A.
6
:34
6
50:
*
%2 , 5-. /
505
50-
*
%2 , -./
7
E
%2 , 5-./
54
E
-
-0.
*
%2 , 5-./
'C
-0-
-0F
, 5 9G
7
40F.
+
+
40A3
+
5.44
A4
:4
503
:I4
-7
J
-0I
J
*;1,4 CCC -4 *
8; , 30- E
max.
50-
H;
typ.
%2 , -. /
# , 5.4 60 *;1 , 5. * %2 , -./
'C
*1 , -.0 *;1 , 4 *
min.
* , A44*
#, I46
%2 , 5-. /
*;1,<5.*
40:.
*
KLM
GB-T
1
21-02-2007 SCT
© by SEMIKRON
SK101GB065TF
Characteristics
Symbol Conditions
Inverse Diode
*+ , *1
#+ , :4 6= *;1 , 4 *
min.
%2 , -. /
'C
typ.
max.
Units
505
503
*
50-
*
%2 , 5-. /
'C
SEMITOP® 3
IGBT Module
*+4
%2 , 5.4 /
407.
*
+
%2 , 5.4 /
5-
E
%2 , 5-. /
-.
5
6
@
5
J
#889
H
#+ , :4 6
L , .44 6L@
1
*,A44*
82B 9
N
SK101GB065TF
-0-.
507
KLM
-0.
$
:4
AI:<.O
E
Temperature sensor
8544
%,544/ 8-.,.NE
Target Data
Features
!
" ! # $% This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
&
#'
&
()&
Remarks
*+ , ' '
GB-T
2
21-02-2007 SCT
© by SEMIKRON
SK101GB065TF
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK101GB065TF
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK101GB065TF
UL Recognized
File no. E 63 532
Dimensions in mm
%F7 & 0 )0 P -
%F7
5
;B%+
21-02-2007 SCT
© by SEMIKRON