SEMIKRON SK75GD066T

SK75GD066T
6 #5 7*" &
Absolute Maximum Ratings
Symbol Conditions
IGBT
2*
8 6 #5 7*
*
8 6 !45 7*
*<
0::
2
;$
+
6 4: 7*
04
+
!5:
+
= #:
2
8 6 !#5 7*
0
A
6 #5 7*
B#
+
6 4: 7*
4$
+
;:
+
*<6 # ' *
SEMITOP® 4
2** 6 $0: 2> 2( ? #: 2>
2* @ 0:: 2
Units
6 #5 7*
2(
Values
Inverse Diode
8 6 !45 7*
IGBT Module
<
<6 # ' Module
SK75GD066T
Target Data
Features
!"#"$
% &
' () *+, -.
/* Typical Applications
%
!0 12+
3 4"5 1-
C<D
+
%8
EF: 333 G!5:
7*
EF: 333 G!#5
7*
#5::
2
2
+*" ! 3
6 #5 7*" &
Characteristics
Symbol Conditions
IGBT
2(CD
2( 6 2*" * 6 !"# +
*
2( 6 : 2" 2* 6 2*
(
2* 6 : 2" 2( 6 #: 2
min.
typ.
max.
5
5";
0"5
8 6 #5 7*
+
8 6 #5 7*
0::
8 6 !#5 7*
*
2*CD
*
*
2( 6 !5 2
* 6 45 +" 2( 6 !5 2
2* 6 #5" 2( 6 : 2
<( 6 $# H
<(&& 6 $# H
&&
<C8ED
()
+
+
8 6 #5 7*
:";
!"!
8 6 !5: 7*
:"4
!
2
8 6 #57*
;
!:
H
8 6 !5:7*
!#"4
!F
H
8 6 #57*%3
!"F5
!";5
2
8 6 !5:7*%3
!"05
#":5
& 6 ! IJ
F"4
:"$
:"!F5
!#4
!!4
5"B
B#5
4$
K
$"!
K
:"45
ML-
*
CD
C&&D
&
2
+
8 6 !#5 7*
2*:
Units
2** 6 $::2
*6 45+
8 6 !#5 7*
2(6 E4LG!5 2
2
2
GD-T
1
14-09-2007 DIL
© by SEMIKRON
SK75GD066T
Characteristics
Symbol Conditions
Inverse Diode
2 6 2*
6 0: +> 2( 6 : 2
2:
min.
IGBT Module
2
8 6 !5: 7*%3
!"$!
2
2
:";5
2
8 6 #5 7*
H
8 6 !5: 7*
4";
H
8 6 !#5 7*
$5
!:
+
A*
<<
N
6 45 +
L 6 #F:: +LA
2**6 $::2
!"F
K
<C8ED.
!"#
ML-
1
SK75GD066T
Units
!"$5
8 6 #5 7*
SEMITOP 4
max.
8 6 #5 7*%3
8 6 !5: 7*
®
typ.
$"5
/
0:
FB$=5O
H
Temperature sensor
<!::
6 !::7* C<#5651HD
Target Data
Features
!"#"$
% &
' () *+, -.
/* This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
%
!0 12+
3 4"5 1-
GD-T
2
14-09-2007 DIL
© by SEMIKRON
SK75GD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
14-09-2007 DIL
© by SEMIKRON
SK75GD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
14-09-2007 DIL
© by SEMIKRON
SK75GD066T
* 4F C &
P #3 &
P $"0 D
* 4F
5
(.E
14-09-2007 DIL
© by SEMIKRON