SKM 145GB124DN Absolute Maximum Ratings Symbol Conditions IGBT 6(7 ( (<= 67 '? 6 SEMITRANSTM 2N Low Loss IGBT Modules SKM 145GB124DN 3 /4 9. 5( 3 - @7<)@ A Typical Applications 0 " 0 + + 0 1( ' + ' 1( )( + 2 0 0 Units -/.. -:. -;. /.. > /. B. CCC D -4. -/4 6 ) ) 6 5( /4.. 6 -/. :4 /.. ) ) --.. ) -/. :4 /.. ) ) --.. ) )( - C % %<= 3 /4 9. 5( 3 - %= 3 -. E CE ? 3 -4. 5( Freewheeling diode % %<= 3 /4 9. 5( 3 %= 3 E E ? 3 5( Characteristics Symbol Conditions IGBT ! " # $ % & " ' ()* ++ , + + * -. + + /. Values Inverse diode SKM 145GAL124DN Features 3 /4 5( 0 " + 67 (7 6(7@ (7 67 3 6(7 ( 3 B ) 67 3 . 6(7 3 6(7 ? 3 /4 -/4 5( ? 3 /4 -/4 5( 67 3 -4 6 ? 3 /4 -/4 5( 6(7 ( 3 -.. ) 67 3 -4 6 ' ( ( ( *(7 + "0 + 67 3 . 6(7 3 /4 6 " 3 - =G <((HD77H C 3 5( + +"" " 6(( 3 #.. 6 ( 3 -.. ) < 3 <"" 3 9 F ? 3 -/4 5( 67 3 > -4 6 3 /4 5( 0 " + min. B4 typ. max. Units 44 .-- -- -. -; #4 .; -/4 -/4 -/ -# 6 ) 6 F /- /B /B4 /94 6 #4 .4 94 -4 .# /4 % % % F 7 7"" --. 4. BI. #. -B -; J Inverse diode 6% 3 67( 6@ <<= K % 3 -.. )E 67 3 . 6E ? 3 /4 -/4 5( ? 3 /4 -/4 5( ? 3 /4 -/4 5( % 3 -.. )E ? 3 -/4 5( +L+ 3 /#.. )LM 7 67 3 . 6 / -9 /4 6 -: -.. -4 -/ -; 6 F ) M( 4B J FWD 6% 3 67( 6@ <<= K % 3 -.. )E 67 3 . 6 ? 3 /4 -/4 5( ? 3 /4 -/4 5( ? 3 /4 -/4 5( % 3 -.. )E ? 3 -/4 5( +L+ 3 /#.. )LM 7 67 3 . 6 / -9 -: -.. -4 /4 -/ -; 4B 6 6 F ) M( J Thermal characteristics <? <?1 <?%1 ' 1+ %,1 .-# .;/ .;/ NL, NL, NL, < + ..4 NL, 4 4 -#. Mechanical data GB GAL = = O =# =4 0 1 14-09-2005 RAA ; /4 © by SEMIKRON SKM 145GB124DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-09-2005 RAA © by SEMIKRON SKM 145GB124DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-09-2005 RAA © by SEMIKRON SKM 145GB124DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm )* ( 1 :; ( 1 :B P 1 :; ( 1 :; This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-09-2005 RAA © by SEMIKRON