SKM 100GB128DN Absolute Maximum Ratings Symbol Conditions IGBT % %56 8 :" 13 SEMITRANSTM 2N SPT IGBT Module SKM 100GB128DN Preliminary Data Features !" # $ % Typical Applications & ' ( ' )* +, )- ." ' )- 12*3 . )- 12*3 ." / ;5&%;< = Values Units /)** /4- 1/*-3 )7* 1)/*3 9)* 4* >>> ? /-* 1/)-3 & & . 4*** 7- 1#-3 )7* 1)/*3 & & B)* & &" / > Inverse diode %@ % %@56 )- 12*3 . )- 12*3 ." / %@6 /* A >A : /-* . Characteristics Symbol Conditions IGBT )- ." ' min. 4"- typ. max. Units -"*"/ / 1*"73 /C 1/#3 #"4*"C /"/- 1/"*-3 /# 1)*3 & D )"C- 1)"--3 )- @ @ @ 813 % 1;3 8 " % C & 8 *" " : )- 1/)-3 . : )- 1/)-3 . 8 /- " : )- 1/)-3 . 13 % B- &" 8 /- " /"7 1)"/3 E ' ' 8 *" )- " / 6, #") *"B4 *"B/ 5F?F >" )- 1/)-3 . '1 3 '13 #** " % B- & 58 58 /) D" : /)- . 8 9 /- 13 *"B- 1/3 D /-* 4-#* -* 2"- 1B"-3 G Inverse diode @ 1;3 %556 H %@ B- &A 8 * A : )- 1/)-3 . : )- 1/)-3 . : )- 1/)-3 . %@ B- &A : /)- 1 3 . 'I' C/** &IJ 8 * ) 1/"23 /"*/C /*/*"- )"/"C /# C"4 D & J G Thermal characteristics 51:3 51:3N %8K % N' *")/ *"- LIM LIM 513 ' *"*- LIM - < < /#* Mechanical data 6 6 + 6# 6- C )"- GB 1 26-02-2004 SCT © by SEMIKRON SKM 100GB128DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 26-02-2004 SCT © by SEMIKRON SKM 100GB128DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 26-02-2004 SCT © by SEMIKRON SKM 100GB128DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm 8K N 7C N 7C This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 26-02-2004 SCT © by SEMIKRON