PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 92 SMBTA 93 s2D s2E Q68000-A6479 Q68000-A6483 B SOT-23 E C Maximum Ratings Parameter Symbol Values SMBTA 92 SMBTA 93 Unit Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 Base current IB 100 Total power dissipation, TS = 74 ˚C Ptot 360 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 5 mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 280 Junction - soldering point Rth JS ≤ 210 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 92 SMBTA 93 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 200 – – – – 300 200 – – – – 5 – – – – – – – – – – 250 250 20 20 nA nA µA µA – – 100 nA 25 40 25 25 – – – – – – – – – – – – 0.5 0.4 DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 92 SMBTA 93 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA SMBTA 92 SMBTA 93 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 ˚C VCB = 160 V, TA = 150 ˚C ICB0 SMBTA 92 SMBTA 93 SMBTA 92 SMBTA 93 Emitter-base cutoff current VEB = 3 V IEB0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) hFE SMBTA 92 SMBTA 93 V – V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SMBTA 92 SMBTA 93 VCEsat Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat – – 0.9 Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 50 – – Output capacitance VCB = 20 V, f = 1 MHz Cobo AC characteristics 1) SMBTA 92 SMBTA 93 Semiconductor Group pF – – Pulse test conditions: t ≤ 300 µs, D = 2 %. 2 MHz – – 6 8 SMBTA 92 SMBTA 93 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 ˚C, D = 0 Semiconductor Group 3 SMBTA 92 SMBTA 93 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4