ONSEMI SMMUN2238LTIG

MMUN2238L, NSBC123TF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
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This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN CONNECTIONS
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAMS
Symbol
Max
Unit
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Rating
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 0
1
SOT−23
CASE 318
STYLE 6
XM 1
SOT−1123
CASE 524AA
STYLE 1
1
MAXIMUM RATINGS (TA = 25°C)
Collector−Base Voltage
XXX MG
G
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Publication Order Number:
DTC123T/D
MMUN2238L, NSBC123TF3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping†
A8R
SOT−23
3,000 / Tape & Reel
T
SOT−1123
8,000 / Tape & Reel
MMUN2238LT1G, SMMUN2238LTIG
NSBC123TF3T5G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
200
(1) (2)
150
(1) SOT−23; Minimum Pad
(2) SOT−1123; 100 mm2, 1 oz. copper trace
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
246
400
2.0
3.2
mW
THERMAL CHARACTERISTICS (SOT−23) (MUNN2238L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
508
311
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
174
208
°C/W
TJ, Tstg
−55 to +150
°C
254
297
2.0
2.4
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−1123) (NSBC123TF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
(Note 3)
(Note 4)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
RqJA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL
193
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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2
MMUN2238L, NSBC123TF3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
4.0
50
−
−
50
−
−
160
350
−
−
−
0.25
−
0.6
−
−
0.9
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
Input Resistor
R1
1.5
2.2
2.9
Resistor Ratio
R1/R2
−
−
−
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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3
Vdc
Vdc
Vdc
Vdc
Vdc
kW
MMUN2238L, NSBC123TF3
TYPICAL CHARACTERISTICS − MMUN2238L
1000
IC/IB = 10
0.1
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
1
75°C
25°C
TA = −25°C
0.01
25°C
10
VCE = 10 V
0.001
0
20
40
60
100
80
1
10
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
100
2.4
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 V
TA = 25°C
2.0
1.6
1.2
0.8
0.4
10
20
30
40
10
25°C
1
TA = −25°C
0.1
VO = 5 V
0.01
50
75°C
0
1
2
3
4
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
0
100
IC, COLLECTOR CURRENT (mA)
2.8
0
1
IC, COLLECTOR CURRENT (mA)
3.2
Cob, OUTPUT CAPACITANCE (pF)
TA = −25°C
100
VO = 0.2 V
1
25°C
TA = −25°C
75°C
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
5
MMUN2238L, NSBC123TF3
TYPICAL CHARACTERISTICS − NSBC123TF3
1000
IC/IB = 10
150°C
150°C
25°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
1
−55°C
0.01
0
10
20
30
40
VCE = 10 V
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
100
1.6
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 V
TA = 25°C
1.2
0.8
0.4
0
10
20
30
40
150°C
−55°C
10
1
0.1
VO = 5 V
0.01
50
25°C
0
0.4
0.8
1.2
1.6
2.0
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
−55°C
100
10
50
2.0
0
25°C
25°C
−55°C
1
150°C
0.1
VO = 0.2 V
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
2.4
MMUN2238L, NSBC123TF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
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6
mm Ǔ
ǒinches
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
MMUN2238L, NSBC123TF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
1
3
E
2
TOP VIEW
A
c
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
SIDE VIEW
3X
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
b
L2
0.08 X Y
e
2X
3X
b1
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
L
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC123T/D