NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDP6T5G series, two complementary BRT devices are housed in the SOT−963 package which is ideal for low power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) R1 Q1 (1) R2 Q2 R2 (4) R1 (5) (6) Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 4 mm, 8000 Units Tape and Reel These are Pb−Free Devices These are Halide−Free Devices MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current XM SOT−963 CASE 527AD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. X M G 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package NSBC114EPDP6T5G SOT−963 (Pb−Free) Shipping† 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 1 Publication Order Number: NSBC114EPDP6/D NSBC114EPDP6T5G Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 231 1.9 mW mW/°C 540 °C/W 269 2.2 mW mW/°C 464 °C/W 339 2.7 mW mW/°C 369 °C/W 408 3.3 mW mW/°C RqJA 306 °C/W TJ, Tstg −55 to +150 °C Marking (Clockwise Rotation) R1 (kW) R2 (kW) SINGLE HEATED Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Thermal Resistance (Note 2) Junction-to-Ambient RqJA DUAL HEATED (Note 3) PD Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Thermal Resistance (Note 2) Junction-to-Ambient Junction and Storage Temperature 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. DEVICE MARKING AND RESISTOR VALUES Device Package NSBC114EPDP6T5G SOT−963 L 10 10 NSBC124EPDP6T5G SOT−963 R (90°) 22 22 NSBC144EPDP6T5G SOT−963 K (180°) 47 47 NSBC114YPDP6T5G SOT−963 Q (90°) 10 47 NSBC115TPDP6T5G SOT−963 J (180°) 100 ∞ NSBC123TPDP6T5G SOT−963 A (180°) 2.2 ∞ NSBC143EPDP6T5G SOT−963 V (90°) 4.7 4.7 NSBC143ZPDP6T5G SOT−963 Y (90°) 4.7 47 NSBC144WPDP6T5G SOT−963 T (90°) 47 22 NSBC123JPDP6T5G SOT−963 D (180°) 2.2 47 http://onsemi.com 2 NSBC114EPDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) TCharacteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.1 4.0 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 15 80 80 80 60 100 140 140 350 350 30 200 140 140 − − − − − − − − − − OFF CHARACTERISTICS NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 1 mA) NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G VCE(sat) NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP6T5G NSBC114YPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G NSBC115TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC123TPDP6T5G − − − − − − − − − − Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114EPDP6T5G/NSBC124EPDP6T5G NSBC114YPDP6T5G/NSBC123TPDP6T5G NSBC143EPDP6T5G/NSBC143ZPDP6T5G NSBC123JPDP6T5G (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBC144WPDP6T5G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBC144EPDP6T5G/NSBC115TPDP6T5G VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBC114EPDP6T5G/NSBC124EPDP6T5G NSBC144EPDP6T5G/NSBC114YPDP6T5 NSBC143ZPDP6T5G/NSBC144WPDP6T5G NSBC123JPDP6T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC123TPDP6T5G/NSBC115TPDP6T5G NSBC143EPDP6T5G VOH 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc − − − − − − − − 0.2 0.2 0.2 0.2 − − 0.2 − − 0.2 Vdc 4.9 4.9 4.9 4.9 − − − − − − − − 4.9 4.9 − − − − NSBC114EPDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) TCharacteristic Symbol Min Typ Max Unit kW ON CHARACTERISTICS (Note 4) Input Resistor NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G R1 7.0 15.4 32.9 7.0 70 1.54 3.3 3.3 15.4 1.54 10 22 47 10 100 2.2 4.7 4.7 47 2.2 13 28.6 61.1 13 130 2.86 6.1 6.1 28.6 2.86 Resistor Ratio NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G R1/R2 0.8 0.8 0.8 0.17 − − 0.8 0.055 1.7 0.038 1.0 1.0 1.0 0.21 − − 1.0 0.1 2.1 0.047 1.2 1.2 1.2 0.25 − − 1.2 0.185 2.6 0.056 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 NSBC114EPDP6T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V TA = 25°C hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 NPN TRANSISTOR TA = 150°C 0.10 TA = −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 25°C 100 150°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0 5 10 15 20 25 30 35 40 VCB, COLLECTOR BASE VOLTAGE (V) 45 50 150°C 10 1 −55°C 0.1 25°C 0.01 0.5 Figure 3. Output Capacitance 1 1.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) −55°C 25°C 1.0 150°C 0.10 0 5 10 15 4 4.5 Figure 4. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 100 Figure 2. DC Current Gain 2.40 0.80 −55°C 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 5. Input Voltage vs. Output Current http://onsemi.com 5 50 5 NSBC114EPDP6T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 PNP TRANSISTOR TA = 25°C TA = 150°C 0.10 TA = −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 100 150°C 25°C −55°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 6. VCE(sat) vs. IC Figure 7. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 30 35 40 45 50 10 150°C 1.0 −55°C 0.1 25°C 0.01 0 1 REVERSE BIAS VOLTAGE (V) 2 25°C −55°C 1.0 150°C 0 5 10 4 Figure 9. Output Current vs. Input Voltage 10 0.1 3 Vin, INPUT VOLTAGE (V) Figure 8. Output Capacitance Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 2.4 0.8 100 15 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 10. Input Voltage vs. Output Current http://onsemi.com 6 50 5 NSBC114EPDP6T5G Series PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE C D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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