SEME-LAB SMP900G-KQ

SMP900G-KQ
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
Ø 15.25
20 nom.
5.5
Ø 14.0
Ø 0.45
LEAD
10.16
•
•
•
•
•
•
•
•
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HIGH SENSITIVITY
WIDEST SPECTRAL RESPONSE
ENHANCED UV SENSITIVITY
PHOTODIODE ISOLATED FROM PACKAGE
EXCELLENT LINEARITY
LOW NOISE
INTEGRAL OPTICAL FILTER OPTION note 1
TO8 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
DESCRIPTION
3
The SMP900G-KQ is a Silicon P.I.N. photodiode incorporated
in a hermetic metal can package. The package window has
greater ultra-violet light transmission, thus extending the useful
spectral range of the device. The electrical terminations are via
two leads of diameter 0.018" on pitch centre diameter of 0.2". The
photodiode is electrically isolated from the package, which has a
separate earth lead.
1
2
TO-8
Pin 1 – Anode
Pin 2 – Cathode
Pin 3 – Case
The larger photodiode active area provides greater sensitivity
than the SMP690 range of devices, with a corresponding
reduction in speed. The photodiode structure has been optimised
for high sensitivity, light measurement applications across the
infra-red to ultra-violet spectrum. Inclusion of a suitable optical
filter into the package can produce a device that responds only to
ultra-violet light. The metal can, isolated photodiode and optional
screening mesh ensure a rugged device with a high degree of
immunity to conducted and radiated electrical interference.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP900G-KQ
CHARACTERISTICS (Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
λ at 900nm
Responsively
Min.
Typ.
0.45
0.55
A/W
77
mm2
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
1V Reverse
9
16
E = 0 Dark
10V Reverse
16
38
E = 0 Dark
10µA Reverse
E = 0 Dark
0V Reverse
800
E = 0 Dark
20V Reverse
200
60
pF
ns
28x10-14
900nm
NEP
V
16
50Ω
Units
nA
80
30V Reverse
Rise Time
Max.
W/√Hz
0.45
Directional characteristics
Directional Characteristics
80°
1
70°
1
Angle from sensor
to illumination
0.9
60°
0.8
0.8
Normalised Incident Power
50°
40°
0.6
30°
0.4
20°
0.7
0.6
0.5
0.4
0.3
0.2
0.2
10°
0.1
0
0
0
0.2
0.4
0.6
0.8
0
1
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Normalised incident power
Spectral Response
Relative Responsivity (%)
100
80
60
40
20
0
0
Semelab plc.
200
400
600
Wavelength (nm)
800
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000
1200
Prelim. 1/98