2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC (max) 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • European preferred part list EPPL Figure 1. Internal schematic diagram Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANS2N2907AUBx JANS MIL-PRF-19500/291 UB - - 2N2907ARUBx ESCC 5202/001 UB 100 krad ESCC Target 2N2907AUB0xSW35 ESCC 5202/001 UB 100 krad SW - 2N2907AUB0x ESCC 5202/001 UB - Target SOC2907ARHRx ESCC 5202/001 LCC-3 100 krad ESCC Yes SOC2907ASW35 ESCC 5202/001 LCC-3 100 krad SW - SOC2907AHRB ESCC 5202/001 LCC-3 - Yes 2N2907ARHRx ESCC 5202/001 TO-18 100 krad ESCC - 2N2907ASW35 ESCC 5202/001 TO-18 100 krad SW - 2N2907AHR ESCC 5202/001 TO-18 - - September 2013 This is information on a product in full production. DocID15382 Rev 6 1/21 www.st.com Contents 2N2907AHR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 2/21 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DocID15382 Rev 6 2N2907AHR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current for TO-18 for LCC-3 and UB -0.6 -0.5 A A Total dissipation at Tamb ≤ 25 °C ESCC: TO-18 LCC-3 and UB LCC-3 and UB (1) JANS: UB 0.4 0.4 0.73 0.5 W Total dissipation at Tcase ≤ 25 °C ESCC: TO-18 1.8 IC PTOT Total dissipation at Tsp(IS) = 25 °C JANS: UB Tstg Storage temperature TJ Max. operating junction temperature 1 -65 to 200 °C 200 °C 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol RthJC Parameter LCC-3 UB TO-18 Thermal resistance junction-case (max) for JANS - - Thermal resistance junction-case (max) for ESCC - 97 Thermal resistance junction-solder pad (infinite sink) (max) for JANS 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JANS 325 - Thermal resistance junction-ambient (max) for ESCC 437 240(1) 437 Unit RthJSP(IS) °C/W RthJA 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID15382 Rev 6 3/21 21 Electrical characteristics 2 2N2907AHR Electrical characteristics(a) JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 °C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit - 10 μA VCB = 50 V 10 nA VCB= 50 V, Tamb = 150 °C 10 μA VCB = 60 V ICBO Collector cut-off current (IE = 0) ICES Collector cut-off current (IE = 0) IEBO Emitter cut-off current (IC = 0) Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) VBE(sat) (1) hFE (1) hfe VCE = 50 V - 50 nA VEB = 5 V - 10 μA 50 nA VEB = 4 V IC = 10 mA 60 Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA Base-emitter saturation voltage IC = 150 mA, IB = 15 mA - IC = 500 mA, IB = 50 mA 0.6 IC= 500 mA, IB= 50 mA DC current gain Small signal current gain IC = 0.1 mA, VCE = 10 V 75 IC = 1 mA, VCE = 10 V 100 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V 100 IC = 500 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V Tamb = -55 °C 50 VCE = 20 V f = 100 MHz 2 a. For PNP type, voltage and current values are negative. DocID15382 Rev 6 100 V 0.4 V 1.6 V 1.3 V 2.6 V 450 300 IC = 20 mA VCE = 10 V, IC =1 mA f = 1 kHz 4/21 - - 2N2907AHR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz ≤ f ≤ 1 MHz - 8 pF Cibo Output capacitance (IE = 0) VEB = 2 V 100 kHz ≤ f ≤ 1 MHz - 30 pF ton Turn-on time VCC = 30 V, IC = 150 mA IB1 = 15 mA - 45 ns toff Turn-off time VCC = 30 V, IC = 150 mA IB1 = -IB2 = 15 mA - 300 ns Typ. Max. Unit - 10 10 nA μA 1. Pulsed duration = 300 μs, duty cycle ≤ 2% 2.2 ESCC electrical characteristics Table 5. ESCC electrical characteristics Symbol Parameter Test conditions Min. Collector cut-off current (IE = 0) VCB = 50 V, VCB = 50 V, Tamb = 150 °C Collector-base breakdown voltage (IE = 0) IC = 10 μA 60 - V Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) IC = 10 mA 60 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 μA 5 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA - 0.4 V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA, IB = 15 mA 0.87 1.3 V ICBO V(BR)CBO hFE (1) IC = 0.1 mA, VCE = 10 V 75 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V 100 IC = 500 mA, VCE = 10 V 50 2 - DC current gain hfe Small signal current gain VCE = 20 V, IC = 20 mA f = 100 MHz Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz ≤ f ≤ 1 MHz DocID15382 Rev 6 300 - - 8 pF 5/21 21 Electrical characteristics 2N2907AHR Table 5. ESCC electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit ton Turn-on time VCC = 30 V, IC = 150 mA IB1 = 15 mA - 45 ns toff Turn-off time VCC = 30 V, IC = 150 mA IB1 = -IB2 = 15 mA - 300 ns 1. Pulsed duration = 300 μs, duty cycle ≤ 2 % 2.3 Electrical characteristics (curves) Figure 2. DC current gain (VCE = 1 V) Figure 3. DC current gain (VCE = 10 V) $0Y Figure 4. Collector emitter saturation voltage $0Y Figure 5. Base emitter saturation voltage (hFE = 10) $0Y 6/21 DocID15382 Rev 6 $0Y 2N2907AHR 2.4 Electrical characteristics Test circuits Figure 6. JANS saturated turn-on switching time test circuit NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns. Figure 7. JANS saturated turn-off switching time test circuit NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns. DocID15382 Rev 6 7/21 21 Electrical characteristics 2N2907AHR Figure 8. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/21 DocID15382 Rev 6 2N2907AHR 3 Radiation hardness assurance Radiation hardness assurance(b) The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/291 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5202/001 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. A brief summary is provided below: – All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. Each wafer of each lot is tested. The table below provides for each monitored parameters of the test conditions and the acceptance criteria Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Value Symbol Parameter Test conditions Unit Min. ICBO IEBO Collector to base cutoff current VCB = 60 20 μA VCB = 50 V 20 nA Emitter to base cutoff current VEB = 5 V 20 μA VEB = 4 V 100 nA V(BR)CEO Breakdown voltage, collector to emitter IC = 10 mA ICES Collector to emitter cutoff current VCE = 50 V hFE VCE(sat) VBE(sat) Max. Forward-current transfer ratio 60 V 100 VCE = 10 V; IC = 0.1 mA [37.5](1) VCE = 10 V; IC = 1.0 mA [50](1) VCE = 10 V; IC = 10 mA [50](1) VCE = 10 V; IC = 150 mA [50](1) VCE = 10 V; IC = 500 mA [25](1) nA 400 300 Collector-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.46 IC = 500 mA; IB = 50 mA 1.84 Base-emitter saturation voltage IC = 150 mA; IB = 15 mA V 0.6 1.5 V IC = 500 mA; IB = 50 mA 3 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. b. For PNP type, voltage and current values are negative. DocID15382 Rev 6 9/21 21 Radiation hardness assurance 2N2907AHR ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: – Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference – Irradiation at 0.1 rad (Si)/s – Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 8. Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100°C. Table 7. Radiation summary Radiation test 100 krad “SW” 100 krad ESCC Wafer test each each Part tested 5 biased 5 biased + 5 unbiased Dose rate 0.1 rad/s Acceptance Fixed values 0.1 rad/s (1) MIL-STD-750 method 1019 Displacement damage Optional Optional Agency part number (ex) 5202/001/04 (2) 5202/001/04R (2) ST part number (ex) SOC2N2907ASW35 (1) SOC2N2907ARHRG Documents CoC + RVT CoC + RVT 1. Part numbers with suffix "SW" have same pre and post irradiation electrical characteristics. Part number with suffix "SW35" have specific post irradiation electrical characteristics. 2. Example of the 2N2907A in LCC-3 Gold finish. 10/21 DocID15382 Rev 6 2N2907AHR Radiation hardness assurance Table 8. ESCC 5202/001R post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 50 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 3 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 10 μA 60 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 10 mA 60 - V V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 μA 5 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA Post irradiation gain calculation (2) IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) - [75] [100] [100] [50] 0.4 V 1.3 V 300 1. Pulsed duration = 300 μs, duty cycle ≤ 2% 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DocID15382 Rev 6 11/21 21 Radiation hardness assurance 2N2907AHR Table 9. 2N2907ASW35 post radiation electrical characteristics Symbol Parameter Test conditions Typ. Max. Unit V(BR)CEO Collector-Emitter Breakdown voltage IC = 10 mA 60 - - V V(BR)CBO Collector-Base Breakdown voltage IE = 10 μA 60 - - V V(BR)EBO Emitter-Base Breakdown voltage IE = 10 μA 5 - - V ICEX Collector-Emitter Cutoff current VCE = 30 V, VEB = 500 mV - - 50 nA ICBO Collector-Base Cut-off VCB = 50 V current - - 10 nA VCE = 10 V, IC = 0.1 mA 50 - - - VCE = 10 V, IC = 0.1 mA 42 - - - VCE = 10 V, IC = 10 mA 100 - - - hFE3 VCE = 10 V, IC = 150 mA 100 - 300 - hFE4 VCE = 10V, IC = 500 mA 50 - - - hFE1 (1) hFE1 (2) hFE2 Forward-Current Transfer Ratio VCE(sat) Collector-Emitter Saturation voltage IC =150 mA, IB = 15 mA - - 400 mV VBE(sat) Base-Emitter Saturation voltage IC = 150 mA, IB = 15 mA - - 1.3 V 1. @ 50 krad (Si) 2. @ 70 krad (Si) 12/21 Min. DocID15382 Rev 6 2N2907AHR 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 10. Product mass summary Package Mass (g) UB 0.06 LCC-3 0.06 TO-18 0.40 DocID15382 Rev 6 13/21 21 Package mechanical data 2N2907AHR Table 11. UB mechanical data mm. Dim. Min. Typ. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 Figure 9. UB drawings 14/21 Max. DocID15382 Rev 6 2N2907AHR Package mechanical data Table 12. LCC-3 mechanical data mm. Dim. Min. Typ. Max. A 1.16 1.42 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 0.30 Figure 10. LCC-3 drawings 1 2 3 DocID15382 Rev 6 15/21 21 Package mechanical data 2N2907AHR Table 13. TO-18 mechanical data mm. Dim. Min. A Typ. 12.7 B 0.49 D 5.3 E 4.9 F 5.8 G 2.54 H 1.2 I 1.16 L 45° Figure 11. TO-18 drawings Order codes 16/21 Max. DocID15382 Rev 6 Order codes Order codes 17/21 5 Table 14. Ordering information DocID15382 Rev 6 Part number Agency specification EPPL Quality level Radiation level Package Lead finish Marking (1) Packing J2N2907AUB1 - - Engineering Model JANS - UB Gold J2907AUB1 WafflePack 2N2907AUB1 - - Engineering Model ESCC - UB Gold 2N2907AUB1 WafflePack SOC2907A - - Engineering Model ESCC - LCC-3 Gold SOC2907A WafflePack JANS2N2907AUBG MIL-PRF19500/291 - JANS - UB Gold JS2907 WafflePack JANS2N2907AUBT MIL-PRF19500/291 - JANS - UB Solder Dip JS2907 WafflePack 2N2907ARUBG 5202/001/06R Target ESCC 100 krad ESCC UB Gold 520200106R WafflePack 2N2907ARUBT 5202/001/07R Target ESCC 100 krad ESCC UB Solder Dip 520200107R WafflePack (2) 5202/001/06 - ESCC 100 krad SW UB Gold 520200106 WafflePack 2N2907AUB07SW35 (2) 5202/001/07 - ESCC 100 krad SW UB Solder Dip 520200107 WafflePack 2N2907AUB06 5202/001/06 Target ESCC - UB Gold 520200106 WafflePack 2N2907AUB07 5202/001/07 Target ESCC - UB Solder Dip 520200107 WafflePack SOC2907ARHRG 5202/001/04R Yes ESCC 100 krad ESCC LCC-3 Gold 520200104R WafflePack SOC2907ARHRT 5202/001/05R Yes ESCC 100 krad ESCC LCC-3 Solder Dip 520200105R WafflePack SOC2907ASW35 (2) 5202/001/04 or 05 ESCC 100 krad SW LCC-3 Gold or Solder Dip 520200104 or 05 - 2N2907AUB06SW35 (3) (3) WafflePack Yes ESCC - LCC-3 (3) WafflePack 2N2907ARHRG 5202/001/01R - ESCC 100 krad ESCC TO-18 Gold 520200101R Strip Pack 2N2907ARHRT 5202/001/02R - ESCC 100 krad ESCC TO-18 Solder Dip 520200102R Strip Pack 5202/001/04 or 05 2N2907AHR (3) Gold or Solder Dip 520200104 or 05 SOC2907AHRB Part number Agency specification 2N2907ASW35 (2) 5202/001/01 or 02 (3) EPPL Quality level Radiation level Package Lead finish Marking (1) ESCC 100 krad SW TO-18 Gold or Solder Dip 520200101 or 02 - ESCC - TO-18 Gold or Solder Dip 520200101 or 02 - 5202/001/01 or 02 2N2907AHR 1. (3) (3) (3) Packing Strip Pack 2N2907AHR Table 14. Ordering information (continued) Strip Pack Specific marking only. The full marking includes in addition: For the engineering models : ST logo, date code, country of origin (FR). For ESCC flight parts : ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts : ST logo, date code, country of origin (FR), manufacturer code (CSTM), serial number of the part within the assembly lot. 2. Not recommended for new design. 3. Depending ESCC part number mentioned on the purchase order. Contact ST sales office for information about the specific conditions for: DocID15382 Rev 6 – Products in die form – Other JANS quality levels – Tape and reel packing Order codes 18/21 2N2907AHR Shipping details 6 Shipping details 6.1 Date code Date code xyywwz is structured as below table: Table 15. Date code x EM (ESCC & JANS) 3 ESCC FLIGHT - JANS FLIGHT (diffused in Singapore) 6.2 yy ww z last two digits of the year week digits lot index in the week W Documentation Table 16. Documentation provided for each type of product Quality level Radiation level Documentation Engineering model - - JANS Flight - Certificate of conformance JANS Flight 100 krad ESCC Flight - ESCC Flight 100 krad Certificate of conformance 50 rad/s radiation verification test report Certificate of conformance Certificate of conformance 0.1 rad/s radiation verification test report DocID15382 Rev 6 19/21 21 Revision history 7 2N2907AHR Revision history Table 17. Document revision history Date Revision Changes 09-Feb-2009 1 Initial release 05-Jan-2010 2 Modified Table 1 on page 1 30-Nov-2011 3 Minor text changes in the document title and description on the coverpage New package inserted (UB). Updated: 14-May-2012 4 – Table 1: Device summary, Table 2: Absolute maximum ratings and Table 3: Thermal data. – Section 2: Electrical characteristics and Section 4: Package mechanical data. Added: – Section : Order codes and Section 6: Shipping details. Added: 20/21 03-Jun-2013 5 18-Sep-2013 6 – new section Radiation hardness assurance – Table 9 on page 12 – Corrected the revision number and dates of revision 3 Updated Table 1: Device summary and Section 5: Order codes DocID15382 Rev 6 2N2907AHR Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID15382 Rev 6 21/21 21