New Product SS10PH9, SS10PH10 Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 • Low leakage current • Meets MSL level 1, per J-STD-020 2 • AEC-Q101 qualified TO-277A (SMPC) K Cathode • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Anode 1 • Halogen-free according to IEC 61249-2-21 definition Anode 2 PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 10 A VRRM 90 V, 100 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.661 V IR 0.3 μA TJ max. 175 °C Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS10PH9 SS10PH10 10H9 10H10 90 100 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number: 89000 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10PH9, SS10PH10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 °C IF = 10 A Instantaneous forward voltage VF (1) IF = 5 A TA = 25 °C Rated VR Typical junction capacitance TA = 125 °C 4.0 V, 1 MHz TYP. MAX. 0.725 - UNIT 0.800 0.88 0.581 - 0.661 0.74 0.3 10 μA 0.3 3 mA 270 - pF V TA = 125 °C IF = 10 A Reverse current SYMBOL IR (2) CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL RJA Typical thermal resistance SS10PH9 (1) SS10PH10 UNIT 60 °C/W RJL 3 Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N SS10PH10-M3/86A SS10PH10-M3/87A UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel 0.10 87A 6500 13" diameter plastic tape and reel SS10PH10HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS10PH10HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note Automotive grade (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89000 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10PH9, SS10PH10 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 12 Resistive or Inductive Load 10 8 6 4 TL measured at the Cathode Band Terminal 2 0 TA = 175 °C 1 0.1 0.01 0.001 0.0001 50 100 75 125 150 TA = 25 °C 10 175 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 9.0 1000 7.5 D = 0.8 Junction Capacitance (pF) Average Power Loss (W) TA = 125 °C 0.00001 25 D = 0.5 D = 0.3 6.0 D = 0.2 4.5 D = 1.0 D = 0.1 T 3.0 1.5 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 tp 10 0 0 1 2 3 4 5 6 7 8 9 10 0.1 11 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 150 °C TA = 175 °C 10 TA = 150 °C 1 TA = 125 °C 0.1 0.01 0.1 TA = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 89000 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10PH9, SS10PH10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89000 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. 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