STMICROELECTRONICS STB9NK60ZDT4

STP9NK60ZD - STF9NK60ZD
STB9NK60ZD
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK
SuperFREDMesh™ MOSFET
ADVANCED DATA
TYPE
STP9NK60ZD
STF9NK60ZD
STB9NK60ZD
■
■
■
■
■
■
VDSS
RDS(on)
ID
Pw
600 V
600 V
600 V
< 0.95 Ω
< 0.95 Ω
< 0.95 Ω
7A
7A
7A
125 W
30 W
125 W
TYPICAL RDS(on) = 0.85 Ω
VERY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
LOW INTRINSIC CAPACITANCES
FAST INTERNAL RECOVERY DIODE
3
1
TO-220
2
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast
body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HID BALLAST
■ ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP9NK60ZD
P9NK60ZD
TO-220
TUBE
STF9NK60ZD
F9NK60ZD
TO-220FP
TUBE
STB9NK60ZDT4
January 2004
B9NK60ZD
2
D PAK
TAPE & REEL
1/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
TO-220 / D2PAK
VDS
VDGR
VGS
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25°C
7
7 (*)
A
ID
Drain Current (continuos) at TC = 100°C
4.3
4.3 (*)
A
Drain Current (pulsed)
28
28 (*)
A
Total Dissipation at TC = 25°C
125
30
W
0.24
W/°C
IDM ()
PTOT
Derating Factor
VESD(G-S)
dv/dt (1)
1
4000
Gate source ESD (HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
V
15
V/ns
-
2500
-55 to 150
V
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤7A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj = 25°C
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
D2PAK
Rthj-pcb
Thermal Resistance Junction-pcb Max
TO-220FP
30
Unit
°C/W
(When mounted on minimum Footprint)
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
1
62.5
4.16
°C/W
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
7
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
235
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.5 A
V(BR)DSS
600
Unit
2.5
V
3.5
4.5
V
0.85
0.95
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss eq. (3)
Equivalent Output Capacitance
Test Conditions
Min.
VDS = 15 V, ID = 3.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 480V
5.3
S
1110
135
30
pF
pF
pF
72
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 3.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
22
17
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 7 A,
VGS = 10V
41
8.7
21
53
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 3.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
42
15
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 7 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
11
8
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
7
28
A
A
1.6
V
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 25°C
(see test circuit, Figure 5)
150
663
8.5
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
194
935
9.6
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Safe Operating Area For TO-220/D²PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D²PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/12
Normalized BVDSS vs Temperature
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
TO-220 MECHANICAL DATA
DIM.
8/12
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L5
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
10/12
1
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
MIN.
inch
MAX.
MIN.
1.5
C
12.8
D
20.2
G
24.4
N
100
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
MIN.
330
T
TAPE MECHANICAL DATA
inch
MAX.
0.933 0.956
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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All Rights Reserved
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