STMICROELECTRONICS STC08IE150HV_07

STC08IE150HV
Emitter switched bipolar transistor
ESBT® 1500V - 8A - 0.08 Ω
Features
VCS(ON)
IC
RCS(ON)
0.65 V
8A
0.08 Ω
■
High voltage / high current cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Squared RBSOA, up to 1500 V
■
Very low CISS driven by RG = 4.7 Ω
■
Very low turn-off cross over time
1
■
Aux SMPS for three phase mains
■
PFC
4
TO247-4L HV
Figure 1.
Application
23
Internal schematic diagrams
Description
The STC08IE150HV is manufactured in
monolithic ESBT technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in gate driven
based topologies.
Table 1.
Device summary
Part number
Marking
Package
Packaging
STC08IE150HV
C08IE150HV
TO247-4L HV
Tube
November 2007
Rev 3
1/11
www.st.com
11
Contents
STC08IE150HV
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC08IE150HV
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
1500
V
VCS(SS)
Collector-source voltage (VBS =VGS =0)
VBS(OS)
Base-source voltage (IC =0, VGS =0)
30
V
VSB(OS)
Source-base voltage (IC =0, VGS =0)
17
V
± 17
V
Collector current
8
A
Collector peak current (tP < 1 ms)
24
A
Base current
8
A
IBM
Base peak current (tP < 1 ms)
12
A
Ptot
Total dissipation at Tc ≤ 25°C
208
W
Tstg
Storage temperature
-40 to 150
°C
125
°C
Value
Unit
0.6
°C/W
VGS
IC
ICM
IB
TJ
Table 3.
Symbol
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Rthj-case Thermal resistance junction-case
max
3/11
Electrical characteristics
2
STC08IE150HV
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source cut-off
VCS =1500 V
current (VBS =VGS =0)
100
µA
IBS(OS)
Base-source cut-off
current (IC =0, VGS =0)
VBS =30 V
10
µA
ISB(OS)
Source-base cut-off
current (IC =0, VGS =0)
VSB =17 V
100
µA
IGS(OS)
Gate-source cut-off
current (IC=0; VBS =0)
VGS = ± 17 V
100
nA
VCS(ON)
Collector-source on
voltage
VGS =10 V IC =3 A IB =0.3 A
VGS =10 V IC =8 A IB =1.6 A
1.2
1.5
V
V
1
1.7
1.5
2
V
V
3
4
V
hFE
DC current gain
VGS =10 V VCS =1 V
IC =3 A
9
14
VGS =10 V VCS =1 V
IC =8 A
4.5
6.8
VBS(ON)
Base-source on voltage
VGS =10 V IC =3 A IB =0.3 A
VGS =10 V IC =8 A IB =1.6 A
VGS(th)
Gate threshold voltage
VBS =VGS
IB =250 µA
VCS =25 V
f =1 MHz
Ciss
QGS(tot)
ts
tf
ts
tf
Input capacitance
Gate-source charge
0.3
0.65
810
pF
45
nC
tp =4 µs
690
ns
IB =0.8 A
10
ns
tp =4 µs
340
ns
IB =0.4 A
10
ns
2.8
V
VGS=VCB=0
VCS=25 V
VGS=10 V
VCB=0
IC =4 A
RG =4.7 Ω
VGS =10 V
Inductive load
Storage time
Fall time
Vclamp =1200V
Inductive load
Storage time
Fall time
Vclamp =1200 V
2
IC =4 A
RG =4.7 Ω
VGS =10 V
IC =4 A
VCC =Vclamp =600 V
VCS(dyn)
Collector-source
dynamic voltage
(500 ns)
VGS =10 V
IB = 0.4 A
t(peak) =500 ns
4/11
IC =2 A
RG =4.7 Ω
IB(peak) =4 A
STC08IE150HV
Table 4.
Symbol
VCS(dyn)
VCSW
Electrical characteristics
Electrical characteristics (continued)
Parameter
Collector-source
dynamic voltage
(1 µs)
Test conditions
Min.
VCC =Vclamp =600 V
IC =2 A
VGS =10 V
RG =4.7 Ω
IB = 0.4 A
IB(peak) =4 A
t(peak) =500 ns
Maximum collectorsource voltage switched RG =4.7 Ω
without snubber
hFE = 5
IC = 8 A 1500
Typ.
1.7
Max.
Unit
V
V
5/11
Electrical characteristics
2.1
6/11
STC08IE150HV
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Gate threshold voltage vs
temperature
Figure 4.
Reverse biased safe
operating area
Figure 5.
DC current gain
Figure 6.
Collector-source voltage
@hFE= 5
Figure 7.
Collector-source voltage
@hFE= 10
STC08IE150HV
Figure 8.
Electrical characteristics
Base-source voltage
@hFE= 5
Figure 9.
Base-source voltage
@hFE= 10
Figure 10. Inductive load switching time Figure 11. Inductive load switching time
@hFE= 5
@hFE= 10
Figure 12. Dynamic collector-source
voltage
7/11
Package mechanical data
3
STC08IE150HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STC08IE150HV
Package mechanical data
TO247-4L HV MECHANICAL DATA
DIM.
mm.
MIN.
A
4.85
A1
2.20
A2
b
0.95
2.50
c
0.40
D
23.85
D1
e
2.54
5.08
L
10.20
L1
2.20
L2
2.60
1.10
1.30
2.90
0.80
24
24.15
15.60
15.75
10.80
2.50
2.80
18.50
L3
S
5.15
2.50
21.50
15.45
e1
‡P
MAX.
1.27
b2
E
TYP
3
3.55
3.65
5.50
7734874
9/11
Revision history
4
STC08IE150HV
Revision history
26
Table 5.
10/11
Document revision history
Date
Revision
Changes
30-Jan-2006
1
First release
01-Dec-2006
2
The document has been reformatted, no content change
22-Nov-2007
3
Document status promoted from preliminary data to datasheet.
Added Section 2.1: Electrical characteristics (curves)
STC08IE150HV
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