STMICROELECTRONICS STE70IE120

STE70IE120
Monolithic Emitter Switched Bipolar Transistor
ESBT® 1200 V - 70 A - 0.014 Ω Power Module
Target data
General features
VCS(ON)
IC
RCS(ON)
1V
70A
0.014W
■
High voltage / high current Cascode
configuration
■
Ultra low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Ultra low CISS
■
Low dynamic VCS(ON)
ISOTOP
Internal schematic diagram
Description
The STE70DE120 is manufactured in monolithic
structure, to be used in industrial applications.
Applications
■
Solar
■
Welding
Order codes
Part number
Marking
Package
Packaging
STE70IE120
E70IE120
ISOTOP
Tube
May 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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www.st.com
7
Electrical ratings
1
STE70IE120
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
1200
V
VCS(SS)
Collector-source voltage (VBS = VGS = 0V)
VBS(OS)
Base-source voltage (IC = 0, VGS = 0V)
40
V
VSB(OS)
Source-base voltage (IC = 0, VGS = 0V)
12
V
± 20
V
Collector current
70
A
Collector peak current (tp < 5ms)
150
A
Base current
20
A
IBM
Base peak current (tP < 1ms)
70
A
Ptot
Total dissipation at TC = 25°C
TBD
W
-65 to 150
°C
Maximum operating junction temperature
150
°C
Insulation withstand voltage (AC-RMS) from all
four leads to external heatsink
2500
V
Value
Unit
TBD
TBD
°C/W
°C/W
VGS
IC
ICM
IB
TSTG
TJ
VISO
1.1
Parameter
Gate-source voltage
Storage temperature
Thermal data
Table 2. Thermal data
Symbol
RthJ-case
Rthc-h
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Parameter
Thermal resistance junction-case (Max)
Thermal resistance case-heatsink with conductive
grease applied (Max)
STE70IE120
2
Electrical characteristics
Electrical characteristics
Table 3. Electrical characteristics
(TCase = 25°C, unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
ICS(SS) Collector-source current VCE = 1200V
(V BS = VGS = 0)
Max.
Unit
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0V)
VBS(OS) = 40V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 10V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 20V
500
nA
VCS(ON) Collector-source ON
voltage
hFE
DC current gain
VGS = 10V_IC = 70A IB = 14A
1
1
VGS = 10V_IC = 45A IB = 4.5A
VGS = 10V_VCS = 1V_IC = 70A
VGS = 10V_VCS = 1V_IC = 45A
3
6
VGS = 10V__IC = 70A _IB = 14A
V
V
7
13
VBS(ON) Base-emitter ON
voltage
VGS = 10V__IC = 45A_IB = 4.5A
VGS(th)
Gate threshold voltage
VBS = VGS __ IB = 250µA
Input Capacitance
VCS = 25V __ f=1MHz
VGS = VCB = 0
tbd
pF
VCS = 25V ___VGS = 10
VCB = 0______IC = 70A
tbd
nC
Ciss
QGS(tot) Gate-source charge
tbd
tbd
3
3.7
V
V
4.5
V
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Package Mechanical data
3
STE70IE120
Package Mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STE70IE120
Package Mechanical data
ISOTOP MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.465
0.480
A1
8.9
9.1
0.350
0.358
B
7.8
8.2
0.307
0.322
C
0.75
0.85
0.029
0.033
C2
1.95
2.05
0.076
0.080
D
37.8
38.2
1.488
1.503
D1
31.5
31.7
1.240
1.248
E
25.15
25.5
0.990
1.003
E1
23.85
24.15
0.938
0.950
E2
24.8
0.976
G
14.9
15.1
0.586
0.594
G1
12.6
12.8
0.496
0.503
G2
3.5
4.3
0.137
1.169
F
4.1
4.3
0.161
0.169
F1
4.6
5
0.181
0.196
P
4
4.3
0.157
0.169
P1
4
4.4
0.157
0.173
S
30.1
30.3
1.185
1.193
P093A
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Revision history
4
STE70IE120
Revision history
Table 4. Document revision history
6/7
Date
Revision
04-May-2007
1
Changes
Initial EDOCS release
STE70IE120
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