STYN208(S) thru STYN1008(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G A K A G K Dimensions TO-263(D2PAK) A G K 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC L L1 L2 L3 L4 R .380 .405 .245 .320 .100 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 0.46 0.74 .018 .029 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 110°C 8 A IT(AV) Average on-state current (180° conduction angle) Tc = 110°C 5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10 ms Tj = 25°C 45 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C 5 V IT(RMS) I ²t PG(AV) Tstg Tj VRGM tp = 10 ms Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) Tj = 25°C 100 A 95 STYN208(S) thru STYN1008(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ STANDARD Symbol Test Conditions STYNx08(S) IGT VD = 12 V MIN. 2 MAX. 15 MAX. 1.3 V MIN. 0.2 V MAX. 30 mA MAX. 70 mA Tj = 125°C MIN. 150 V/µs Tj = 25°C MAX. 1.6 V RL = 33 W VGT VGD VD = VDRM RL = 3.3 kW IH IT = 100 mA Gate open IL IG = 1.2 IGT Unit Tj = 125°C mA dV/dt VD = 67 % VDRM VTM ITM = 16 A Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 46 mW Tj = 25°C MAX. 5 µA 2 mA IDRM IRRM Gate open tp = 380 µs VDRM = VRRM Tj = 125°C THERMAL RESISTANCES Symbol Parameter Rth(j-c) J unction to case (DC) Rth(j-a) Junction to ambient (DC) S = 0.5 cm² Value Unit 20 °C/W TO-220AB 60 °C/W TO-263 70 S= copper surface under tab PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package STYN x08S 200~~1000 15 mA TO-263 S T Y N x08 200~~1000 15 mA TO-220AB OTHER INFORMATION Part Number Marking STYN x08S STYN x08S S T Y N x08 S T Y N x08 Note: x = voltage Weight Base Quantity Packing mode 0.3 g 75 Tube 2.3 g 250 B ulk