SUR512EF Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description Outline • Digital transistor 3 Features 2 R2 R1 • Both SRC1203 chip and SRA2203. chip in SOT-563F package • With built-in bias resistors Tr2 R2 R1 4 Ordering Information Type No. Marking Package Code R1 R2 SUR512EF CX SOT-563F Tr1 22KΩ 22KΩ Tr2 22KΩ 22KΩ 5 Symbol Tr1 Tr2 Unit VO 50 -50 V Input Voltage VI 40 -40 V Out Current IO 100 -100 mA Power Dissipation PD 100 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C Ta=25°°C Electrical Characteristics(Tr1 : NPN) Output Cut-off Current DC Current Gain Symbol IO(OFF) GI 6 Ta=25°°C Ratings Out Voltage Characteristic Tr1 PIN Connections 1. Emitter 1 2. Base 1 3. Collector 2 4. Emitter 2 5. Base 2 6. Collector 1 Absolute maximum ratings (Tr1, Tr2) Characteristic 1 Test Condition VO=50V, VI=0 VO=5V, IO=10mA Min. Typ. Max. Unit - - 500 nA 70 120 - - Output Voltage VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V Input Voltage (ON) VI(ON) VO=0.2V, IO=5mA - 2.1 3.0 V Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1mA 1.0 1.2 - V * Transition Frequency fT VO=10V, IO=5mA - 200 Input Current II VI=5V - - * : Characteristic of Transistor Only KST-J011-000 - MHz 0.36 mA SUR512EF Ta=25°°C Electrical Characteristics(Tr2 : PNP) Characteristic Output Cut-off Current DC Current Gain Symbol IO(OFF) GI Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA Min. Typ. Max. Unit - - -500 nA 70 120 - - Output Voltage VO(ON) IO=-10mA, II=-0.5mA - -0.1 -0.3 V Input Voltage (ON) VI(ON) VO=-0.2V, IO=-5mA - -2.1 -3.0 V Input Voltage (OFF) VI(OFF) VO=-5V, IO=-0.1mA -1.0 -1.2 - V * Transition Frequency fT VO=-10V, IO=-5mA - 200 - MHz Input Current II VI=-5V - - -0.36 mA * : Characteristic of Transistor Only KST-J011-000 SUR512EF Electrical Characteristic Curves Tr1 : NPN Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Tr2 : PNP Fig. 3 GI - IO Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KST-J011-000