Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 2.3-2.7 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Functional Block Diagram Vcc = 5V RFIN RFOUT Stage 1 Bias Vbias = 5V Stage 2 Bias 2.3-2.7GHz 2W Power Amplifier RoHS Compliant & Green Package Pb 6mm x 6mm QFN Package Product Features • • • • • • • • • P1dB = 35dBm @ 6V Three Stages of Gain: 37dB 802.11g 54Mb/s Class AB Performance Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1μs Attenuator step 20dB @ Vpc2 = 0V Applications Stage 3 Bias • • • Power Detector Power Up/Dow n Control SZM-2166Z 802.16 WiMAX Driver or Output Stage 802.11b/g WLAN, WiFi CPE Terminal Applications Key Specifications Symbol fO Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50Ω, VCC = 6.0V, Iq = 724mA, TBP = 30ºC Unit Min. 2300 Typ. Frequency of Operation MHz P1dB Output Power at 1dB Compression – 2.7GHz dBm S21 Small Signal Gain – 2.7GHz dB EVM at 27dBmOutput power EVM 802.11g 54Mb/s - 2.7GHz % 2.5 EVM% 2700 35 34.5 36 IM3 Third Order Suppression (Pout=23dBm per tone) - 2.7GHz dBc -40 NF Noise Figure at 2.7 GHz dB 8.3 IRL Worst Case Input Return Loss 2.5-2.7GHz ORL Worst Case Output Return Loss 2.5-2.7GHz Vdet Range Icq IVPC Ileak Rth, j-l Output Voltage Range for Pout=10dBm to 33dBm dB mA Power Up Control Current (Vpc=6V, ( IVPC1 +IVPC2+ IVPC3 ) Vcc Leakage Current (Vcc = 6V, Vpc = 0V) mA Thermal Resistance (junction - lead) 10 14 13 17 V Quiescent Current (Vcc = 6V) -35 0.9 to 1.8 615 724 832 4 µA ºC/W Max. 100 12 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Typical Performance with appropriate app circuit(Vcc=6V, ***Icq=655mA, * 802.11g 54Mb/s 64QAM) Parameter Units **2.3GHz **2.4GHz ***2.5GHz ***2.6GHz ***2.7GHz Gain @ Pout=26dBm dB 37.5 37.5 37.5 37 35 P1dB dBm 34 34 35 35 35 EVM% at 27dBm Output Power* % 2.3 2.9 1.7 1.7 2.5 Current @ Pout 2.5% EVM* mA 768 779 900 889 878 Input Return Loss dB 23 21 14 14 14 Output Return Loss dB 14 11 20 25 18 **Measured with 2.3-2.4GHz Application circuit. See page 11 for details. ***Measured with 2.5-2.7GHz Application circuit. See page 13 for details Absolute Maximum Ratings Parameters Value Unit VC3 Collector Bias Current (IVC3) 1500 mA VC2 Collector Bias Current (IVC2) 500 mA VC1 Collector Bias Current (IVC1) 150 mA *****Device Voltage (VD) 9.0 V 6 W Power Dissipation Operating Lead Temperature (TL) -40 to +85 ºC ****Max CW RF output Power for 50 ohm continuous long term operation 30 dBm Max CW RF Input Power for 50 ohm output load 26 dBm Max CW RF Input Power for 10:1 VSWR RF out load 5 dBm Max Storage Temperature +150 ºC Operating Junction Temperature (TJ) +150 ºC ESD Human Body Model Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. Class 1B Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IcqVcc < (TJ - TL) / RTH’ j-l Note: Icq in this equation is for the stage with the highest current **** With specified application circuit. *****No RF Drive 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Pin Out Description Function Description 7, 11,12, 22, 29, 31, 39, 40 Pin # NC These are no connect (NC) pins and are not wired inside the package. It is recommended to connect them as shown in the application circuit to achieve the stated performance. 1,10, 21, 30 GND These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground them external to the package to achieve the specified performance. 2 VC1 3 VBIAS12 This is the supply voltage for the active bias circuit of the 1st and 2nd stages. This is the collector of the first stage. 4-5 R1A-R2A A resistor is tied across these pins internal to the package. 6 RFIN This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin. 8 VPC1 Power up/down control pin for the 1st stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. 9 VPC2 Power up/down control pin for the 2nd stage. Power down VPC<1V for step attenuator function enable. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. 13, 38 VC2A, VC2B 14-15 17-18 33-34 36-37 C1A-C2A C3A-C4A C4B-C3B C2B-C1B These pins have capacitors across them internal to the package as shown in the below schematic. They are used as tuning and RF coupling elements between the 2nd and 3rd stage. 16,35 VB3A, VB3B These are the connections to the base of the 3rd stage output device. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. 19 VPC3 Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA. 20 VDET This is the output port for the power detector. It samples the power at the input of the 3rd stage. These two pins are connected internal to the package and connect to the 2nd stage collector. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. 23-28 RFOUT These are the RF output pins and DC connections to the 3rd stage collector. 32 VBIAS3 This is the supply voltage for the active bias circuit of the 3rd stage. 31 30 40 GND NC VBIAS3 C4B C3B VB3B C2B C1B NC VC2B NC Simplified Device Schematic 1 VC1 GND NC VBIAS12 RFOUT R1A RFOUT R2A RFOUT RFIN RFOUT NC RFOUT VPC1 RFOUT NC VPC2 21 10 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 VPC3 C3A C4A C2A VB3A C1A VC2A 20 NC NC 11 GND VDET GND http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C) EVM vs Pout, F=2.3GHz 802.11g, OFDM 54Mb/s, 64QAM 5 5 4 4 3 3 EVM(%) EVM(%) EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM 2 1 2 1 0 0 16 18 20 22 24 26 28 30 16 18 20 Pout(dBm) 2.3GHz 2.4GHz 22 24 26 Pout(dBm) -40C +25C EVM vs Pout, F=2.4GHz 802.11g, OFDM 54Mb/s, 64QAM 28 30 +85C IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz 5 -30 -35 -40 IM3(dBc) EVM(%) 4 3 2 -45 -50 -55 -60 1 -65 -70 0 16 18 20 22 24 Pout(dBm) -40C +25C 26 28 18 30 20 24 26 28 Pout(dBm) +85C 2.3GHz 2.4GHz Typical Gain vs Pout, F=2.4GHz Typical Gain vs Pout, F=2.3GHz 44 44 42 42 40 40 Gain(dB) Gain(dB) 22 38 36 38 36 34 34 32 32 30 30 18 20 22 24 26 28 30 32 34 36 18 20 22 24 26 -40C +25C 28 30 32 34 36 Pout(dBm) Pout(dBm) -40C +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 +25C +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C) Narrowband S12 - Reverse Isolation Narrowband S11 - Input Return Loss -40 -10 -45 -15 -50 -17.5 -55 S12(dB) S11(dB) -12.5 -20 -60 -22.5 -65 -25 -70 -27.5 -75 -80 -30 2.3 2.32 2.34 2.36 2.38 2.3 2.4 2.32 2.36 -40C 2.38 2.4 +25C +85C Narrowband S22 - Output Return Loss Narrowband S21 - Forward Gain 45 0 43 -2.5 41 -5 39 37 S22(dB) S21(dB) 2.34 Frequency(GHz) Frequency(GHz) -40C +25C +85C 35 33 31 -7.5 -10 -12.5 -15 29 -17.5 27 -20 25 2.3 2.32 2.34 2.36 2.38 2.3 2.4 2.32 2.34 -40C +25C -40C +85C DC Supply Current vs Pout, F=2.3GHz 2.38 2.4 +25C +85C DC Supply Current vs Pout, F=2.4GHz 1.6 1.6 1.4 1.4 1.2 1.2 Idc(A) Idc(A) 2.36 Frequency(GHz) Frequency(GHz) 1 1 0.8 0.8 0.6 0.6 0.4 0.4 18 20 22 24 26 28 30 32 34 36 18 20 22 24 -40C +25C 26 28 30 32 34 36 Pout(dBm) Pout(dBm) +85C 303 South Technology Court Broomfield, CO 80021 -40C Phone: (800) SMI-MMIC 5 +25C +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C) RF Power Detector (Vdet) vs Pout, F=2.4GHz Noise Figure vs Frequency, T=+25C 2 8 1.8 7.9 7.8 NF(dB) Vdet(V) 1.6 1.4 1.2 7.7 7.6 1 7.5 0.8 18 20 22 24 26 28 30 32 34 7.4 36 2.3 Pout(dBm) -40C +25C 2.31 2.33 2.34 2.35 2.36 2.37 2.38 2.39 2.4 Frequency(GHz) Broadband S21 - Forward Gain, F=2.3-2.4GHz Broadband S11 -Input Return Loss, F=2.3-2.4GHz 45 0 -5 40 -10 35 -15 S21(dB) S11(dB) 2.32 +85C -20 -25 30 25 -30 20 -35 15 -40 10 0 1 2 3 4 5 6 0 1 2 Frequency(GHz) -40C +25C 3 4 5 6 Frequency(GHz) +85C -40C +85C 2.3-2.4GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V Broadband S22 - Output Return Loss, F=2.3-2.4GHz 0 +25C 34 32 -5 Delta(dB) S22(dB) 30 -10 -15 28 26 24 -20 22 20 -25 0 1 2 3 4 5 6 2.3 2.31 -40C +25C 2.32 2.33 2.34 2.35 2.36 2.37 2.38 2.39 2.4 Frequency(GHz) Frequency(GHz) T=-40c +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 T=+25c T=+85c http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 632mA, T=25C) EVM vs Pout, F=2.5GHz 802.11g, OFDM 54Mb/s, 64QAM 5 5 4 4 3 3 EVM(%) EVM(%) EVM vs Pout, F=2.4GHz 802.11g, OFDM 54Mb/s, 64QAM 2 1 2 1 0 0 16 18 20 22 24 Pout(dBm) -40C +25C 26 28 30 16 18 20 22 24 26 28 30 Pout(dBm) +85C -40C EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM +25C +85C IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz 5 -30 -35 4 IM3(dBc) EVM(%) -40 3 2 -45 -50 -55 -60 1 -65 0 -70 16 18 20 22 24 26 28 30 18 20 22 Pout(dBm) 2.4GHz 2.5GHz 2.4GHz 26 28 2.5GHz Typical Gain vs Pout, F=2.5GHz Typical Gain vs Pout, F=2.4GHz 44 44 42 42 40 40 Gain(dB) Gain(dB) 24 Pout(dBm) 38 36 38 36 34 34 32 32 30 30 18 20 22 24 26 28 30 32 34 36 18 20 22 24 26 -40C +25C 28 30 32 34 36 Pout(dBm) Pout(dBm) -40C +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 +25C +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq =632mA, T=25C) Narrowband S12 - Reverse Isolation -40 -12.5 -45 -15 -50 -17.5 -55 S12(dB) S11(dB) Narrowband S11 - Input Return Loss -10 -20 -22.5 -60 -65 -25 -70 -27.5 -75 -30 -80 2.4 2.42 2.44 2.46 2.48 2.5 2.4 2.42 2.44 Frequency(GHz) -40C +25C 2.46 2.48 2.5 Frequency(GHz) +85C -40C Narrowband S21 - Forward Gain +25C +85C Narrowband S22 - Output Return Loss 45 -10 43 -12.5 41 -15 37 S22(dB) S21(dB) 39 35 33 31 -17.5 -20 -22.5 -25 29 -27.5 27 -30 25 2.4 2.42 2.44 2.46 2.48 2.4 2.5 2.42 2.44 -40C DC Supply Current vs Pout, F=2.4GHz 2.48 2.5 +25C +85C DC Supply Current vs Pout, F=2.5GHz 1.6 1.6 1.4 1.4 1.2 1.2 Idc(A) Idc(A) 2.46 Frequency(GHz) Frequency(GHz) -40C +25C +85C 1 0.8 1 0.8 0.6 0.6 0.4 18 20 22 24 26 28 30 32 34 36 0.4 18 20 22 24 Pout(dBm) -40C +25C 26 28 30 32 34 36 Pout(dBm) +85C 303 South Technology Court Broomfield, CO 80021 -40C Phone: (800) SMI-MMIC 8 +25C +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 632mA, T=25C) Noise Figure vs Frequency, T=+25C RF Power Detector (Vdet) vs Pout, F=2.5GHz 2.2 8 2 7.9 7.8 1.6 NF(dB) Vdet(V) 1.8 1.4 1.2 7.7 7.6 1 7.5 0.8 18 20 22 24 26 28 30 32 34 36 7.4 Pout(dBm) -40C +25C 2.4 2.41 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5 Frequency(GHz) Broadband S11 -Input Return Loss, F=2.4-2.5GHz Broadband S21 - Forward Gain, F=2.4-2.5GHz 0 45 -5 40 -10 35 -15 S21(dB) S11(dB) 2.42 +85C -20 -25 30 25 20 -30 15 -35 -40 10 0 1 2 3 4 5 6 0 1 2 Frequency(GHz) -40C +25C 3 4 5 6 Frequency(GHz) +85C -40C +25C +85C 2.4-2.5GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V Broadband S22 - Output Return Loss, F=2.4-2.5GHz 0 34 32 -5 Delta(dB) S22(dB) 30 -10 -15 28 26 24 -20 22 -25 20 0 1 2 3 4 5 6 2.4 2.41 Frequency(GHz) -40C +25C 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5 Frequency(GHz) +85C 303 South Technology Court Broomfield, CO 80021 T=-40c Phone: (800) SMI-MMIC 9 T=+25c T=+85c http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C) EVM vs Pout, F=2.5GHz 802.11g, OFDM 54Mb/s, 64QAM 5 5 4 4 3 3 EVM(%) EVM(%) EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM 2 1 2 1 0 0 16 18 20 22 24 26 28 30 16 18 20 Pout(dBm) 2.5GHz 2.6GHz 22 24 26 Pout(dBm) -40C +25C 2.7GHz EVM vs Pout, F=2.7GHz 802.11g, OFDM 54Mb/s, 64QAM 28 30 +85C IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz -30 5 -35 -40 IM3(dBc) EVM(%) 4 3 2 -45 -50 -55 -60 1 -65 -70 0 16 18 20 22 24 26 28 18 30 20 22 -40C +25C +85C 2.5GHz Typical Gain vs Pout, F=2.5GHz 26 28 2.6GHz 2.7GHz Typical Gain vs Pout, F=2.7GHz 44 44 42 42 40 40 Gain(dB) Gain(dB) 24 Pout(dBm) Pout(dBm) 38 36 38 36 34 34 32 32 30 30 20 22 24 26 28 Pout(dBm) -40C +25C 30 32 34 36 20 24 26 28 Pout(dBm) -40C +25C +85C 303 South Technology Court Broomfield, CO 80021 22 Phone: (800) SMI-MMIC 10 30 32 34 36 +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C) Narrowband S11 - Input Return Loss Narrowband S12 - Reverse Isolation -40 -10 -45 -12.5 -50 S12(dB) S11(dB) -15 -17.5 -20 -55 -60 -65 -70 -22.5 -75 -25 -80 2.5 2.55 2.6 2.65 2.7 2.5 2.55 2.6 Frequency(GHz) -40C +25C +85C -40C Narrowband S21 - Forward Gain -10 43 -12 41 -14 +25C +85C -16 37 S22(dB) S21(dB) 2.7 Narrowband S22 - Output Return Loss 45 39 35 33 -18 -20 31 -22 29 -24 27 -26 25 -28 2.5 2.55 2.6 2.65 2.7 2.5 2.55 2.6 Frequency(GHz) -40C +25C 2.65 2.7 Frequency(GHz) +85C -40C DC Supply Current vs Pout, F=2.5GHz +25C +85C DC Supply Current vs Pout, F=2.7GHz 1.8 1.8 1.6 1.6 1.4 1.4 Idc(A) Idc(A) 2.65 Frequency(GHz) 1.2 1.2 1 1 0.8 0.8 0.6 0.6 18 20 22 24 26 28 30 32 34 36 38 18 20 22 24 26 Pout(dBm) -40C +25C 28 30 32 34 36 38 Pout(dBm) +85C 303 South Technology Court Broomfield, CO 80021 -40C Phone: (800) SMI-MMIC 11 +25C +85C http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C) RF Power Detector (Vdet) vs Pout, F=2.7GHz Noise Figure vs Frequency, T=+25C 8.5 2.4 2.2 8.4 1.8 NF(dB) Vdet(V) 2 1.6 1.4 8.3 8.2 1.2 8.1 1 0.8 18 20 22 24 26 28 30 32 34 36 38 8.0 2.5 Pout(dBm) -40C +25C 2.52 2.56 2.58 2.6 2.62 2.64 2.66 2.68 2.7 Frequency(GHz) Broadband S11 -Input Return Loss, F=2.5-2.7GHz Broadband S21 - Forward Gain, F=2.5-2.7GHz 0 45 -5 40 -10 35 -15 S21(dB) S11(dB) 2.54 +85C -20 -25 30 25 20 -30 15 -35 10 -40 0 1 2 3 4 5 0 6 1 2 3 4 5 6 Frequency(GHz) Frequency(GHz) -40C +25C +85C -40C +25C +85C 2.5-2.7GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V Broadband S22 - Output Return Loss, F=2.5-2.7GHz 0 34 32 -5 Delta(dB) S22(dB) 30 -10 -15 28 26 24 -20 22 -25 20 0 1 2 3 4 5 6 2.5 2.52 Frequency(GHz) -40C +25C 2.54 2.56 2.58 2.6 2.62 2.64 2.66 2.68 2.7 Frequency(GHz) +85C 303 South Technology Court Broomfield, CO 80021 T=-40c Phone: (800) SMI-MMIC 12 T=+25c T=+85c http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp 2.3-2.4 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V 2.3-2.4 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper C1 C7 C3 R7 C6 L3 C4 R6 L2 C2 C5 L1 C8 Q1 C9 C10 R5 R1 R2 R3 303 South Technology Court Broomfield, CO 80021 R4 Phone: (800) SMI-MMIC 13 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp 2.4-2.5 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V 2.4-2.5 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper C1 C7 C3 R7 C6 L3 C4 R6 L2 C5 C2 L1 C8 Q1 C9 C10 R5 R1 R2 R3 303 South Technology Court Broomfield, CO 80021 R4 Phone: (800) SMI-MMIC 14 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp 2.5-2.7 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V 2.5-2.7 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper C1 C7 C3 R7 C6 C4 R6 L3 L2 C5 C2 L1 C8 Q1 C9 R5 R1 R2 R3 303 South Technology Court Broomfield, CO 80021 R4 Phone: (800) SMI-MMIC 15 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Part Number Ordering Information Part Symbolization The part will be symbolized with “SZM2166Z” to designate it as a RoHs green compliant product. Marking designator will be on the top surface of the package. Package Outline Drawing (dimensions in mm): Recommended Metal Land Pattern (dimensions in mm[in]): 303 South Technology Court Broomfield, CO 80021 Part Number Description Reel Size Devices/ Reel SZM-2166Z Lead Free, RoHs compliant 7” 1000 SZM-2166Z-EVB1 2.3-2.4GHz Evaluation Board N/A N/A SZM-2166Z-EVB2 2.4-2.5GHz Evaluation Board N/A N/A SZM-2166Z-EVB3 2.5-2.7GHz Evaluation Board N/A N/A Recommended PCB Soldermask for Land Pattern (dimensions in mm[in]): Phone: (800) SMI-MMIC 16 http://www.sirenza.com EDS-105683 Rev B