tm TE CH T15M1024A SRAM 128K X 8 LOW POWER CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Low-power consumption - Active: 40mA at 55ns - Stand-by: (CMOS input/output) 0 ~ +70 °C = 15uA -40 ~ +85 °C = 20uA • 55/70/100 ns access time The T15M1024A is a very Low Power CMOS Static RAM organized as 131,072 words by 8 bits. That operates on a wide voltage range from +5V (±10%) power supply, Fabricated using high performance CMOS technology, Inputs and • Equal access and cycle time three-state outputs are TTL compatible and allow • Single +5V (±10%) Power Supply for direct interfacing with common system bus • TTL compatible , Tri-state output structures. Data retention is guaranteed at a power • Common I/O capability supply voltage as low as 1.5V. • Automatic power-down when deselected • Available in 32-pin SOP ,TSOP-I(8x20mm), BLOCK DIAGRAM TSOP-I(8x13.4mm) and DIP (600 mil) package. PART NUMBER EXAMPLES PART NO. PACKAGE CODE T15M1024A-55D D=SOP T15M1024A-70H H=TSOP-I(8x20) T15M1024A-100P P=TSOP-I(8x13.4) T15M1024A-100N N=DIP (600 mil) T15M1024A-55DI D=SOP T15M1024A-70HI H=TSOP-I(8x20) T15M1024A-100PI P=TSOP-I(8x13.4) T15M1024A-100NI N=DIP (600 mil) Operating Temperature 0 ~ +70 °C -40 ~ +85 °C TM Technology Inc. reserves the right to change products or specifications without notice. Vcc Vss A0 . . . A16 DECODER WE OE CE1 CE2 CONTROL CIRCUIT P. 1 CORE ARRAY DATA I/O I/O1 .. I/O8 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A PIN CONFIGURATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS A11 A9 A8 A13 WE CE2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DIP & SOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 TSOP-I (8x20mm) & (8x13.4mm) OE A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 PIN DESCRIPTIONS SYMBOL DESCRIPTIONS SYMBOL DESCRIPTIONS A0 ~ A16 Address inputs OE Output enable input I/O1~I/O8 Data inputs/outputs VDD Power supply CE1 ,CE2 Chip enable VSS Ground NC No connection WE Write enable input TM Technology Inc. reserves the right to change products or specifications without notice. P. 2 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on Any Pin Relative to Gnd Power Dissipation Storage Temperature Temperature Under Bias SYM VR PD TSTG IBIAS MIN. -0.5 -55 0/-40 MAX. +7 V 0.7 +150 +70/+85 UNIT V W °C °C *Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and function operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TRUTH TABLE CE2 WE OE CE 1 H X X X X L X X L H H L L H H H L H L X *Note: X = Don’t Care, L = Low, H = High TM Technology Inc. reserves the right to change products or specifications without notice. DATA MODE High-Z High-Z Data Out High-Z Data In Standby Standby P. 3 Active, Read Active, Output Disable Acitve, Write Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A OPERATING CHARACTERISTICS (Vcc = +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C / -40°C ~ 85°C) PARAMETER SYM. Input Leakage Current ILI TEST CONDITIONS -55 -70 -100 UNIT Min Max Min Max Min Max - 1 - 1 - 1 uA - 1 - 1 - 1 uA - 2 - 2 - 2 mA ICC1 Cycle time=1us, 100% duty, IOUT=0mA, CE1 ≤ 0.2V, CE2 ≥ VCC-0.2V, VIN ≤ 0.2V - 3 - 3 - 3 mA ICC2 Cycle time=min, 100% duty, IOUT=0mA, CE1 = VIL,CE2= VIH , VIN = VIH or VIL - 40 - 35 - 25 mA - 0.5 - 0.5 - 0.5 mA 0°C to 70°C - 15 - 15 - 15 -40°C to 85°C - 20 - 20 - 20 2.4 0.4 - 2.4 0.4 - 2.4 0.4 - Vcc = Max, VIN = Gnd to Vcc CE1 = VIH or CE2= VIL Output Leakage Current ILO or OE = VIH or WE = VIL VOUT= Gnd to Vcc CE1 = VIL,CE2= VIH, Operating Power Supply Current ICC Average Operating Current Standby Power Supply Current (TTL Level) WE =VIH, OE = VIH , VIN = VIH or VIL, IOUT=0mA CE1 = VIH I SB CE2= VIL CE1 ≥ Vcc-0.2V, Standby Power Supply Current (CMOS Level) I SB1 VOL Output High Voltage VOH Output Low Voltage CE2 ≥ VCC-0.2V or CE2 ≤ 0.2V VIN ≤ 0.2V or VIN ≥ Vcc-0.2V I OL = 2.1mA I OH = -1.0 mA TM Technology Inc. reserves the right to change products or specifications without notice. uA P. 4 V V Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A RECOMMENDED OPERATING CONDITIONS (Ta = 0 ~ +70 °C /-40°C to 85°C**) PARAMETER Supply Voltage Input Voltage SYM Vcc Gnd MIN 4.5 0.0 0.6Vcc -0.3 VIH VIL MAX 5.5 0.0 Vcc+0.3 0.4 UNIT V V V V CAPACITANCE (f = 1 MHz, Ta = 25°C,) PARAMETER Input Capacitance Input/ Output Capacitance SYMBOL CONDITION VIN = 0V VIN = VOUT = 0V C IN C I/O MAX. 6 8 UNIT pF pF Note: This parameter is guaranteed by device characterization and is not production tested. AC TEST CONDITIONS PARAMETER CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level 0.4V to 0.6Vcc 5.0 ns 1.5V C L =30pF+1TTL Load(55ns/70ns) C L =100pF+1TTL Load(Load for 100ns) Output Load AC TEST LOADS AND WAVEFORM TTL DQ RL 50 ohm CL* CL 30 pF Z0 = 50 ohm Vt =1.5V Fig.B Output Load Equivalent Fig.A * Including Scope and Jig Capacitance TM Technology Inc. reserves the right to change products or specifications without notice. P. 5 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A AC CHARACTERISTICS ( Vcc = +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C /-40°C to 85°C) (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Output Hold from Address Change Chip Enable to Output in Low-Z Chip Disable to Output in High-Z Output Enable to Output in Low-Z Output Disable to Output in High-Z -55 SYM. tRC tAA tACE tOE tOH tLZ tHZ tOLZ tOHZ -70 -100 UNIT Min Max Min Max Min Max 55 10 10 5 - 55 55 25 20 20 70 10 10 5 - 70 70 35 25 25 100 10 10 5 - 100 100 50 30 30 ns ns ns ns ns ns ns ns ns (2)WRITE CYCLE PARAMETER Write Cycle Time Chip Enable to Write End Address Valid to Write End Address Setup Time Write Pulse Width Write Recovery Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End -55 SYM. tWC tCW tAW tAS tWP tWR tDW tDH tWHZ tOW -70 -100 UNIT Min Max Min Max Min Max 55 50 50 0 45 0 25 0 5 25 - 70 60 60 0 50 0 30 0 5 25 - 100 80 80 0 70 0 40 0 5 30 - TM Technology Inc. reserves the right to change products or specifications without notice. P. 6 ns ns ns ns ns ns ns ns ns ns Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) tRC Address t AA tOH DOUT Previous Data Valid Data Valid READ CYCLE 2 (Chip Enable Controlled) CE1 CE2 t ACE tOHZ tOLZ D OUT DON'T CARE UNDEFINED Notes (READ CYCLE) : 1. WE are high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition referenced to VOH or VOL levels. 4. At any given temperature and voltage condition. tHZ (max.) is less than tLZ (min.) both for a given device and from device to device interconnection. 5. Transition is measured ±200mV from steady state voltage with load. This parameter is sampled and not 100% tested. 6. Device is continuously selected with CE1 =VIL . TM Technology Inc. reserves the right to change products or specifications without notice. P. 7 Publication Date: FEB. 2002 Revision:A tm TE CH WRITE CYCLE 1 T15M1024A ( WE Controlled) tWC Ad d res s tAW tWR tCW CE 1 C E2 tA S tWP W E tWHZ D O U T tOW H ig h-Z tDW D IN WRITE CYCLE 2 tDH H ig h -Z ( CE Controlled) tWC Ad d res s tAW tWR tCW C E 1 t AS C E 2 tWP W E D O U T H ig h -Z tDW D IN H ig h -Z tDH H ig h -Z D O N 'T C AR E U N D E F IN E D NOTES ( WRITE CYCLE ) : 1. A write occurs during the overlap of a low CE1 , a high CE2 and a low WE . A write begins at the lateat transition among CE1 goes low, CE2 going high and WE going low. A write end at the earliest transition among CE1 going high, CE2 going low and WE going high. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of CE1 going low or CE2 going high to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. TM Technology Inc. reserves the right to change products or specifications without notice. P. 8 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention SYM. VDR Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR TEST CONDITION CE1 ≥ VDD -0.2V CE2 ≤ 0.2V VIN ≥ Vcc -0.2V or VIN ≤ 0.2V tR MIN. 1.5 MAX. - UNIT V 0 5* - uA ns tRC - ns * 0 ~ +70 °C / -40 ~ +85 °C,VCC=3V DATA RETENTION WAVEFORM (Ta = 0 ~ +70 °C /-40°C to 85°C) Data Retention M ode V CC V cc_typ t CE1 V D R > 1.5V t Vcc_TYP R CD R CE1>VCC-0.2V V IH TM Technology Inc. reserves the right to change products or specifications without notice. V IH P. 9 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A PACKAGE DIMENSIONS 32-LEAD SOP e1 32 17 E HE Detail F 1 b L 16 e1 D C A2 S y e A LE A1 See Detail F Seating Plane Symbol A A1 A2 b C D E e HE L LE S y θ Dimension in inches min. typ. max 0.118 0.004 0.101 0.106 0.111 0.014 0.016 0.020 0.006 0.008 0.012 0.805 0.817 0.440 0.445 0.450 0.044 0.050 0.056 0.546 0.556 0.556 0.023 0.031 0.039 0.047 0.055 0.063 0.036 0.004 0° 10° Dimension in mm min. typ. max. 3.00 0.10 2.57 2.69 2.82 0.36 0.41 0.51 0.15 0.20 0.31 20.45 20.75 11.18 11.30 11.43 1.12 1.27 1.42 13.87 14.12 14.38 0.58 0.79 0.99 1.19 1.40 1.60 0.91 0.10 0° 10° TM Technology Inc. reserves the right to change products or specifications without notice. P. 10 Notes : 1. Dimensions D max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion / intrusion. 3. Dimensions D & E include mold mismatch and determined at the mold parting line. 4. controlling dimension : inches 5. general appearance spec should be based on final visual inspection spec. Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A PACKAGE DIMENSIONS 32-LEAD TSOP (8x20mm) SYMBOL A A1 A2 b C D Db E L L1 θ DIMENSIONS IN INCHES MIN -0.002 0.035 0.007 0.004 0.020 NOM 0.040 0.008 0.006 0.787 TYP 0.724 TYP 0.315 TYP 0.024 0.032 TYP 0°~12° DIMENSIONS IN MM MAX 0.047 0.006 0.041 0.011 0.008 MIN 0.05 0.90 0.17 0.10 0.028 0.598 TM Technology Inc. reserves the right to change products or specifications without notice. P. 11 NOM 1.00 0.20 0.15 20.00 TYP 18.40 TYP 8.00 TYP 0.610 0.813 TYP 0°~12° MAX 1.20 0.15 1.05 0.27 0.21 0.622 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A PACKAGE DIMENSIONS 32-LEAD TSOP-I (8x13.4mm) SYMBOL A A1 A2 b C D E HD e L L1 y θ Dimension in inches 0.044(MAX) 0.004±0.002 0.041(MAX) 0.008±0.004 0.006±0.001 0.465±0.008 0.315±0.004 0.528±0.008 0.020(TYP.) 0.020±0.004 0.031±0.008 0.002(MAX) 0° ~ 5° Dimension in mm 1.10(MAX) 0.05±0.05 1.02(MAX) 0.20±0.10 0.15±0.02 11.8±0.2 8.0±0.1 13.4±0.2 0.5(TYP.) 0.5±0.1 0.8±0.2 0.05(MAX) 0° ~ 5° TM Technology Inc. reserves the right to change products or specifications without notice. P. 12 Publication Date: FEB. 2002 Revision:A tm TE CH T15M1024A 32 C PACKAGE DIMENSIONS 32-LEAD DIP (600mil) 1 e1 E 17 £c 16 SEATING PLANE Symbol A A1 A2 b b1 C D E e e1 L θ A1 L A A2 D e b1 Dimension in inches Min Nom Max 0.200 0.015 0.142 0.150 0.158 0.014 0.018 0.022 0.056 0.060 0.064 0.008 0.010 0.014 1.642 1.650 1.658 0.527 0.535 0.543 0.100 - 0.600 0.118 0.130 - b Dimension in mm Min Nom Max 5.08 0.38 3.61 3.81 4.01 0.36 0.46 0.56 1.42 1.52 1.62 0.20 0.25 0.35 41.71 41.91 42.11 13.40 13.60 13.80 2.54 - 0.142 3.00 0 ~ 15° 15.24 - 3.30 3.60 TM Technology Inc. reserves the right to change products or specifications without notice. P. 13 Publication Date: FEB. 2002 Revision:A