TC74HCT174AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HCT174AP,TC74HCT174AF
Hex D-Type Flip Flop with Clear
The TC74HCT174A is a high speed CMOS D-TYPE FLIP
FLOP fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
Information signals applied to the D inputs are transferred to
the Q outputs on the positive going edge of the clock pulse.
When the CLR input is held low, the Q outputs are in the low
logic level independent of the other inputs.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HCT174AP
TC74HCT174AF
Features
•
High speed: fmax = 56 MHz (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
Compatible with TTL outputs: VIH = 2.0 V (min)
VIL = 0.8 V (max)
•
Wide interfacing ability: LSTTL, NMOS, CMOS
•
Output drive capability: 10 LSTTL loads
•
•
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
Balanced propagation delays: tpLH ∼
− tpHL
•
Pin and function compatible with 74LS174
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Pin Assignment
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TC74HCT174AP/AF
IEC Logic Symbol
Truth Table
Inputs
Output
Function
CLR
D
CK
Q
L
X
X
L
Clear
H
L
L
⎯
H
H
H
⎯
H
X
Qn
No Change
X: Don’t care
System Diagram
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TC74HCT174AP/AF
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
Symbol
Rating
Unit
VCC
−0.5 to 7
V
VIN
−0.5 to VCC + 0.5
V
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65 to 150
°C
DC input voltage
DC output voltage
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Symbol
Rating
Unit
VCC
4.5 to 5.5
V
VIN
0 to VCC
V
VOUT
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
Input rise and fall time
tr, tf
0 to 500
ns
Output voltage
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Ta = −40 to
85°C
Ta = 25°C
Test Condition
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
High-level input
voltage
VIH
⎯
4.5 to
5.5
2.0
⎯
⎯
2.0
⎯
V
Low-level input
voltage
VIL
⎯
4.5 to
5.5
⎯
⎯
0.8
⎯
0.8
V
High-level output
voltage
VOH
IOH = −20 μA
VIN
= VIH or
IOH = −4 mA
VIL
Low-level output
voltage
VOL
IOL = 20 μA
VIN
= VIH or
IOL = 4 mA
VIL
IIN
ICC
Input leakage
current
Quiescent supply
current
IC
4.5
4.4
4.5
⎯
4.4
⎯
4.5
4.18
4.31
⎯
4.13
⎯
4.5
⎯
0.0
0.1
⎯
0.1
4.5
⎯
0.17
0.26
⎯
0.33
VIN = VCC or GND
5.5
⎯
⎯
±0.1
⎯
±1.0
μA
VIN = VCC or GND
5.5
⎯
⎯
4.0
⎯
40.0
μA
5.5
⎯
⎯
2.0
⎯
2.9
mA
Per input: VIN = 0.5 V or 2.4 V
Other input: VCC or GND
3
V
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TC74HCT174AP/AF
Timing Requirements (input: tr = tf = 6 ns)
Characteristics
Symbol
Limit
Limit
4.5
⎯
15
19
5.5
⎯
14
18
4.5
⎯
15
19
5.5
⎯
14
18
4.5
⎯
20
25
5.5
⎯
18
23
4.5
⎯
5
5
5.5
⎯
5
5
4.5
⎯
10
10
5.5
⎯
10
10
4.5
⎯
30
24
5.5
⎯
33
26
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
12
15
ns
⎯
⎯
29
36
ns
tpHL
⎯
⎯
29
36
ns
fmax
⎯
32
61
⎯
MHz
(CK)
tW (H)
⎯
tW (L)
⎯
Minimum set-up time
ts
⎯
Minimum hold time
th
⎯
trem
⎯
f
⎯
Minimum removal time
( CLR )
Clock frequency
Unit
Typ.
tW (L)
( CLR )
Ta =
−40 to
85°C
VCC (V)
Minimum pulse width
Minimum pulse width
Ta = 25°C
Test Condition
ns
ns
ns
ns
ns
MHz
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Output transition time
Symbol
tTLH
tTHL
Propagation delay time
tpLH
(CK-Q)
tpHL
Propagation delay time
( CLR -Q)
Maximum clock frequency
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TC74HCT174AP/AF
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Output transition time
Symbol
tTLH
tTHL
Propagation delay
time
tpLH
(CK-Q)
tpHL
Propagation delay
time
Min
Typ.
Max
Min
Max
4.5
⎯
8
15
⎯
19
5.5
⎯
7
14
⎯
18
4.5
⎯
20
34
⎯
43
5.5
⎯
17
31
⎯
39
4.5
⎯
20
34
⎯
43
5.5
⎯
17
31
⎯
39
4.5
30
54
⎯
24
⎯
5.5
33
57
⎯
26
⎯
⎯
⎯
5
10
⎯
10
pF
⎯
⎯
30
⎯
⎯
⎯
pF
⎯
⎯
Maximum clock
frequency
fmax
⎯
Input capacitance
CIN
Power dissipation
capacitance
CPD
( CLR -Q)
Note:
(Note)
Unit
VCC (V)
⎯
tpHL
Ta = −40 to
85°C
Ta = 25°C
Test Condition
ns
ns
ns
MHz
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/6 (per F/F)
And the total CPD when n pcs. of flip flop operate can be gained by the following equation:
CPD (total) = 18 + 12･n
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TC74HCT174AP/AF
Package Dimensions
Weight: 1.00 g (typ.)
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TC74HCT174AP/AF
Package Dimensions
Weight: 0.18 g (typ.)
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TC74HCT174AP/AF
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for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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