DYNEX TF44712A

TF447..A
TF447..A
Fast Switching Thyristor
Replaces March 1998 version, DS4273-2.4
DS4273-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
VDRM
1200V
IT(RMS)
470A
ITSM
5000A
dV/dt 200V/µs
dI/dt
500A/µs
tq
20µs
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
Type Number
Repetitive
Peak
Voltages
VDRM VRRM
Conditions
1200
1000
VRSM = VRRM + 100V
TF447 12A
TF447 10A
IDRM = IRRM = 25mA
at VRRM or VDRM & Tvj
Lower voltage grades available.
Outline type code: MU86
See Package Details for further information.
CURRENT RATINGS
Parameter
Symbol
Conditions
Max.
Units
IT(AV)
Mean on-state current
Half sinewave, 50Hz, Tcase = 80oC
300
A
IT(RMS)
RMS value
Half sinewave, 50Hz, Tcase = 80oC
470
A
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TF447..A
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Conditions
Max.
Units
tp = 10ms half sine;
5.0
kA
VR = 0% VRRM, Tj = 125˚C
125 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
dc
-
0.07
o
Anode dc
-
0.133
o
Cathode dc
-
0.154
o
Double side
-
0.02
o
Single side
-
0.04
o
On-state (conducting)
-
125
o
Reverse (blocking)
-
125
o
Storage temperature range
-40
150
o
Clamping force
4.75
5.25
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 5.0kN
with mounting compound
C/W
C/W
C
Virtual junction temperature
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
dIR/dt
0.5x IRR
IRR
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C/W
C
C
kN
TF447..A
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Units
Maximum on-state voltage
At 600A peak, Tcase = 25oC
-
1.85
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
25
mA
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% VDRM Tj = 125oC, Gate open circuit
-
200
V/µs
Gate source 20V, 20Ω
Repetitive 50Hz
-
500
A/µs
dI/dt
Rate of rise of on-state current
tr ≤ 0.5µs, Tj = 125˚C
Non-repetitive
-
800
A/µs
VTM
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.2
V
rT
On-state slope resistance
At Tvj = 125oC
-
1.0
mΩ
tgd
Delay time
-
1.5
µs
Total turn-on time
Tj = 25˚C, IT = 100A,
VD = 50V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
-
3
µs
Holding current
Tj = 25oC, ITM = 1A, VD = 12V
-
70*
mA
-
20
µs
Turn-off time
Tj = 125˚C, IT = 200A, VR = 50V,
tq code: A
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
Typ.
Max.
Units
VT(TO)
t(ON)TOT
IH
tq
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
3.0
V
IGT
Gate trigger current
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
200
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC, RL = 1kΩ
-
0.2
V
-
5.0
V
-
4
A
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3
W
Anode positive with respect to cathode
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TF447..A
CURVES
4/13
TF447..A
5/13
TF447..A
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF447..A
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes 3.6 x 2.0 deep
(in both electrodes)
6.3
Cathode tab
Cathode
Ø 42 max
15.0
14.0
Ø19nom
Ø1.5
Gate
Ø19nom
Anode
Ø 38 max
Nominal weight: 50g
Clamping force: 3.5kN ±10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
AN4839
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V , r on-state characteristic
AN5001
TO
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T
TF447..A
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4273-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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