RECTRON TFMBJ15A

TVS
RECTRON
TFMBJ
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AA
Ratings at 25 o C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
P PPM
Minimum 600
Watts
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
I PPM
SEE TABLE 1
Amps
PM(AV)
5.0
Watts
I FSM
100
Amps
VF
SEE NOTE 4
Volts
T J , T STG
-55 to + 150
RATINGS
Steady State Power Dissipation at T L = 75oC (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25oC per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at TL = 25oC
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
0
C
1998-8
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