BOURNS TISP4125H3BJ

*R
o
H
V SC
AV ER O M
A I S IO P L
L A N IA
BL S N T
E
TISP4125H3BJ/TISP4219H3BJ,
TISP4125M3BJ/TISP4219M3BJ
LCAS RING AND TIP PROTECTION PAIRS
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3/M3BJ Series for LCAS Protection
Customized Voltage for LCAS Protection
Battery-Backed Ringing ............................................. 87 V rms
Ground-Backed Ringing ........................................... 101 V rms
VDRM
V(BO)
LCAS
V
V
TERMINAL
‘4125
100
125
TIP
‘4219
180
219
RING
Device
SMBJ Package (Top View)
2 T(A)
R(B) 1
MDXXBGE
Low Differential Capacitance .................................39 pF max.
Device Symbol
.................................................... UL Recognized Components
T
Rated for International Surge Wave Shapes
ITSP
Wave Shape
A
Standard
H3
SERIES
M3
SERIES
2/10 µs
GR-1089-CORE
500
300
8/20 µs
IEC 61000-4-5
300
220
10/160 µs
FCC Part 68
250
120
10/700 µs
ITU-T K.20/21/45
200
100
10/560 µs
FCC Part 68
160
75
10/1000 µs
GR-1089-CORE
100
50
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Description
These protector pairs have been formulated to limit the peak voltages on the line terminals of the ‘7581/2/3 LCAS (Line Card Access Switches)
type devices. An LCAS may also be referred to as a Solid State Relay, SSR, i.e. a replacement of the conventional electro-mechanical relay.
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone
line. These overvoltages are initially clipped by protector breakdown clamping until the voltage rises to the breakover level, which causes the
device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted
through the device. For negative surges, the high crowbar holding current prevents d.c. latchup with the SLIC current, as the surge current
subsides.
Each protector consists of a symmetrical voltage-triggered bidirectional thyristor. They are guaranteed to voltage limit and withstand the listed
international lightning surges in both polarities.
How to Order
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
TISP4125H3BJ
TISP4125H3BJR
TISP4125H3BJR-S
TISP4219H3BJ
TISP4219H3BJR
TISP4219H3BJR-S
TISP4125M3BJR
TISP4125M3BJR-S
TISP4219M3BJR
TISP4219M3BJR-S
Device
TISP4125M3BJ
TISP4219M3BJ
Package
Carrier
BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4125H3BJ & TISP4219H3BJ
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
‘4125
‘4219
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2 and 3)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (F CC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (I TU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (F CC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
Value
±100
±180
VDRM
500
300
250
220
200
200
200
160
100
ITSP
55
60
2.1
400
-40 to +150
-65 to +150
ITSM
di T/dt
TJ
Tstg
Unit
V
A
A
A/µs
°C
°C
See Applications Information for voltage values at lower temperatures.
Initially, the TISP4xxxH3BJ must be in thermal equilibrium with TJ = 25 °C.
The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 10 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Recommended Operating Conditions
Component
RS
VRING
Series current limiting
resistor
AC ringing voltage
Condition
Min
Typ
Max
Unit
GR-1089-CORE first-level surge survival
0
Ω
GR-1089-CORE first-level and second-level surge survival
0
Ω
K.20, K.21 and K.45 coordination pass with a 400 V primary
protector
6
Ω
Figure 12, VBAT = -48 V ±2.5 V,
R1= R2 = 300 Ω, 0 °C < TA < +85 °C
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Battery-backed
Ground-backed
87
V rms
101
V rms
TISP4xxxH3/M3BJ Series for LCAS Protection
Electrical Characteristics, TISP4xxxH3, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
IDRM
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
V(BO)
Impulse breakover
voltage
I(BO)
VT
IH
Breakover current
On-state voltage
Holding current
dv/dt
Critical rate of rise of
off-state voltage
Off-state current
ID
Coff
Off-state capacitance
TA = 25 °C
TA = 85 °C
‘4125
‘4219
Min
Max
±5
±10
±125
±219
‘4125
‘4219
±134
±229
V
±0.6
±3
±0.6
A
V
A
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
I T = ±5 A, t W = 100 µs
I T = ±5 A, di/dt = +/-30 mA/ms
±0.15
±0.15
Linear voltage ramp, Maximum ramp value < 0.85V DRM
V D = ±50 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
(see Note 5)
Typ
µA
V
kV/µs
±5
TA = 85 °C
rms, VD = 0,
rms, VD = -1 V
rms, VD = -2 V
rms, VD = -50 V
rms, VD = -100 V
Unit
±10
90
79
74
35
28
µA
80
71
65
30
23
Typ
Max
Unit
pF
NOTE 5: To avoid possible voltage clipping, the ‘4125 is tested with V D = -98 V.
Thermal Characteristics
Parameter
R θJA Junction to free air thermal resistance
NOTE
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000) ,
TA = 25 °C, (see Note 6)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
113
°C/W
50
6: EIA/JESD51-2 environment and the PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4125M3BJ & TISP4219M3BJ
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
‘4125
‘4219
Repetitive peak off-state voltage, (see Note 7)
Non-repetitive peak on-state pulse current (see Notes 8 and 9)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (F CC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (I TU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (F CC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 8, 9 and 10)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
VDRM
Value
±100
±180
300
220
120
110
100
100
100
75
50
ITSP
di T/dt
TJ
Tstg
V
A
30
32
2.1
300
-40 to +150
-65 to +150
ITSM
Unit
A
A/µs
°C
°C
NOTES: 7. See Applications Information for voltage values at lower temperatures.
8. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25 °C.
9. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
10.EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 11 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Recommended Operating Conditions
Component
RS
VRING
Series current limiting
resistor
AC ringing voltage
Condition
Min
Typ
Max
Unit
GR-1089-CORE first-level surge survival
10
Ω
GR-1089-CORE first-level and second-level surge survival
12
Ω
6
Ω
K.20, K.21 and K.45 coordination pass with a 400 V primary
protector
Figure 12, VBAT = -48 V ±2.5 V,
R1= R2 = 300 Ω, 0 °C < TA < +85 °C
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Battery-backed
87
V rms
Ground-backed
101
V rms
TISP4xxxH3/M3BJ Series for LCAS Protection
Electrical Characteristics, TISP4xxxM3, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
IDRM
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
V(BO)
Impulse breakover
voltage
I(BO)
VT
IH
dv/dt
ID
Coff
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TA = 25 °C
TA = 85 °C
‘4125
‘4219
Min
Max
±5
±10
±125
±219
‘4125
‘4219
±132
±226
V
±0.6
±3
±0.6
A
V
A
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
IT = ±5 A, t W = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
±0.15
±0.15
Linear voltage ramp, Maximum ramp value < 0.85V DRM
V D = ±50 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
f = 1 MHz, V d = 1 V
(see Note 11)
Typ
µA
V
kV/µs
±5
TA = 85 °C
rms, VD = 0,
rms, VD = -1 V
rms, VD = -2 V
rms, VD = -50 V
rms, VD = -100 V
Unit
±10
74
67
62
31
25
µA
62
56
52
26
21
Typ
Max
Unit
pF
NOTE 11: To avoid possible voltage clipping, the ‘4125 is tested with V D = -98 V.
Thermal Characteristics
Parameter
R θJA Junction to free air thermal resistance
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000) ,
TA = 25 °C, (see Note 12)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
115
°C/W
52
NOTE 12: EIA/JESD51-2 environment and the PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V DRM
-v
IDRM
ID
VD
ID
IDRM
VD
V DRM
+v
IH
I(BO)
V(BO)
VT
IT
ITSM
I
Quadrant III
ITSP
Switching
Characteristic
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PMXXAAB
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4xxxH3BJ Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAG
100
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4HAF
V D = ±50 V
Normalized Breakover Voltage
|I D| - Off-State Current - µA
10
1
0·1
0·01
0·001
1.05
1.00
0.95
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
-25
Figure 2.
TC4HACC
TA = 25 °C
tW = 100 µs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4HAD
1.5
70
50
40
30
20
15
10
7
5
4
3
1.0
0.9
0.8
0.7
0.6
0.5
2
1.5
1
0.7
2.0
Normalized Holding Current
IT - On-State Current - A
100
150
Figure 3.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
200
150
0
25
50
75
100 125
TJ - Junction Temperature - °C
0.4
1
1.5
2
3
4 5
V T - On-State Voltage - V
Figure 4.
7
10
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 5.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4xxxM3BJ Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCMAG
100
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4MAF
VD = ±50 V
Normalized Breakover Voltage
|I D| - Off-State Current - µA
10
1
0·1
0·01
1.05
1.00
0.95
0·001
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
-25
150
Figure 6.
TC4MACB
50
40
30
1.5
20
15
10
7
5
4
3
1.0
0.9
0.8
0.7
0.6
0.5
2
1.5
1
0.7
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4MAD
2.0
TA = 25 °C
tW = 100 µs
Normalized Holding Current
IT - On-State Current - A
70
150
Figure 7.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
0
25
50
75
100 125
TJ - Junct ion Temperature - °C
0.4
1
1.5
2
3
4 5
VT - On-State Voltage - V
7
Figure 8.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 9.
150
TISP4xxxH3/M3BJ Series for LCAS Protection
Rating Information
TISP4xxxH3BJ
TISP4xxxM3BJ
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HAC
30
ITSM(t) - Non-Repetitive Peak On-State Current - A
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
t - Current Duration - s
Figure 10.
1000
TI4MAC
30
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
1000
t - Current Duration - s
Figure 11.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
APPLICATIONS INFORMATION
Introduction
These protector pairs have been designed to limit the peak voltages on the line terminals of ‘7581/7582/7583 LCAS (Line Card Access Switch)
parts. An LCAS may also be referred to as a Solid-State Relay, SSR, i.e. a replacement of the conventional electro-mechanical relay.
The ‘7581 LCAS has two solid-state switches which connect the telephone line to the line card SLIC (Subscriber Line Interface Circuit), Figure
12, SW1 and SW2. A further two solid-state switches connect the telephone ringing generator to the line, Figure 12, SW3 and SW4. Applied
5-volt logic signals control the condition of the switches to perform the functions of line disconnect, connection to the SLIC and application of
ringing. If excessive long-term overdissipation occurs, a thermal sensor activates thermal shutdown and opens the switches. The SLIC side of
switches SW1 and SW2 is limited in voltage by internal protectors Th3 and Th4. The line-side of the LCAS is voltage limited by the two TISP®
parts.
TISP4125M3
OR
TISP4125H3
RING
RELAY
SLIC
RELAY
SW3
SW1
SLIC
TIP
Th1
LCAS
Th2
Th3
Th4
TISP4219M3
OR
TISP4219H3
SW4
R2
SW2
CONTROL
LOGI C
RING
Vbat
AI4XAQ
R1
V RING
VBAT
SW5a
SW5b
RING
GENERATOR
Figure 12. Basic LCAS Arrangement
Additional functions are provided by the ‘7582 (line test access) and the ‘7583 (test-in and test-out access). Up to three conventional electromechanical relays may be replaced by the LCAS. The resulting size reduction can double the line density of a line card.
This document covers the types of overvoltage protection required by the ’7581 LCAS and how the TISP® part voltages are selected to
provide these requirements. The LCAS ’7582 and ’7583 are also covered as the additional switches used in these parts are similar to the
’7581.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
LCAS Switch Ratings
When a switch is in the off state, the maximum withstand voltage may be set by the switch itself or by the control line to the switch. At 25°C,
the switch terminal to ground voltage rating for all the switches is ±320 V. Switches SW1 to SW3 are bidirectional MOS types and can
withstand ±320 V between terminals. Switch SW4 is a bidirectional thyristor which is rated at ±465 V between terminals.
Overcurrents as well as overvoltages occur on telephone lines. In the on state, the thyristor switch, SW4, is capable of withstanding high levels
of current overload. For currents above about 200 mA, the MOS switches, SW1 to SW3, will go into a current limited condition. This will cause
the voltage to rise across the switch and large amounts of power to be developed. In the longer term, this power loss increases the overall chip
temperature. When the temperature exceeds about 125 °C, thermal shutdown occurs and the switches are set to the off state. Without power
loss, the LCAS will cool. Eventually, the thermal trip will reset, setting the switches back in the high power loss condition again. The cycle of
temperature increase, thermal shutdown, temperature decrease and switch re-activation will continue until the overcurrent ceases.
TISP4125M3
OR
TISP4125H3
R1
RING
RELAY
SLIC
RELAY
SW3
SW1
SLIC
OVERCURRENT
PROTECTION
TIP
Th1
Th3
Th4
Th2
R2
TISP4219M3
OR
TISP4219H3
SW4
CONTROL
LOGIC
RING
SW2
Vbat
AI4XAR
GROUND-BACKED RINGING
SW5 AS SHOWN
+√2xV RING
TIP
WIRE
R2
± √2xV RING
BATTERY-BACKED RINGING
SW5 OPERATED
VBAT + √2xV RING
VBAT
SW5b
0
R1
SW5a
TIP
WIRE
0
VBAT
VBAT
RING
WIRE
-√2xV RING
RING
GENERAT OR
RING
WIRE
VBAT - √2xV RING
Figure 13. LCAS Shown with Switch Breakdown Limits
Equivalent Circuit
Figure 13 shows the LCAS switch voltage ratings as breakdown diodes, which must not be allowed to conduct. Each switch has three diodes;
one between poles and the other two from each pole to ground. At 25 °C, switches SW1 through to SW3 have breakdown diode voltages of
±320 V. Switch SW4 has breakdown diode voltage values of ±465 V for the one between poles and ±320 V for the two diodes connected to
ground. Note that only protection to ground is required, as in the limit, the inter-switch voltage limitation of ±640 V is the same as the switch to
ground limitation of +320 V and -320 V in both polarities.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
Protector Voltages
Protector working and protection voltage design calculations for the LCAS are described in the IEEE Std. C62.37.1-2000, IEEE Guide for the
Application of Thyristor Surge Protection Devices, pp 40-43. These calculations comprehend:
the temprature variation of LCAS voltage ratings,
increase in protection voltage with ambient temperature rise, long term a.c. heating and under impulse conditions,
decrease in working voltage with ambient temperature fall,
ground-backed and battery-backed ringing configurations (see Figure 13).
These calculation techniques were used to set the TISP® part voltages. Using these TISP® parts allows normal system voltage levels of ±100 V
on TIP and ±180 V on RING without clipping at 25 °C. At 0 °C ambient, these voltage levels become ±97 V on TIP and ±174 V on RING. Under
open circuit line conditions, this means that the peak ringing voltage cannot exceed ±174 V for equipment operation down to 0 °C ambient.
Assuming a battery voltage of 48 V ±2.5 V and battery-backed ringing, the maximum peak a.c. ring voltage is 174 V - 50.5 V = 123.5 V or 87 V
rms. The working voltage of ±97 V on TIP is more than half the ±174 V working voltage on RING. As a result, the TIP working voltage does not
represent a limitation for systems where the TIP return resistance is equal or less than the RING source resistance.
For balanced impedance ground-backed ringing, the maximum peak a.c. ring voltage under short line conditions (short between TIP and
RING) is limited by the TIP working voltage of ±97 V. In the negative ring polarity, the limit of the voltage is made up from half the battery
voltage plus half of the peak a.c. ring voltage. The maximum peak a.c. ring voltage is 2 x (97 - 50.5/2) = 143.5 V or 101 V rms.
Line test voltage levels must be considered, whether they be applied by using LCAS switches or separate electro-mechanical relays. For these
TISP® parts, the applied test voltage should not exceed the lowest working voltage, which is ±97 V.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
MECHANICAL DATA
Recommended Printed Wiring Footprint
2.54
(.100)
SMB Pad Size
2.40
(.095)
DIMENSIONS ARE:
MILLIMETERS
(INCHES)
2.16
(.085)
MDXX BIA
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
TISP4125H3BJ
TISP4219H3BJ
TISP4125M3BJ
TISP4219M3BJ
Symbolization
Code
4125H3
4219H3
4125M3
4219M3
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
MECHANICAL DATA
SMBJ (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB
4.06 - 4.57
(.160 - .180)
3. 30 - 3. 94
(.130 - .155)
1
2
Index
Mark
(if needed)
2. 00 - 2.40
(.079 - .094)
1. 90 - 2.10
(.075 - .083)
0. 76 - 1.52
(.030 - .060)
0. 10 - 0. 20
(.004 - .008)
1. 96 - 2. 32
(.077 - .091)
5. 21 - 5.59
(.205 - .220)
DIMENSIONS ARE:
MILLIMETERS
(INCHES)
MDXXBHAA
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
MECHANICAL DATA
Tape Dimensions
SMB Package Single-Sprocket Tape
1. 55 - 1.65
(.061 - .065 )
3. 90 - 4.10
(.154 - .161 )
1. 95 - 2.05
(.077 - .081)
0. 40
MAX .
(.016)
1. 65 - 1.85
(.065 - .073 )
5. 45 - 5.55
(.215 - .219 ) 11.70 - 12.30
(.461 - .484 )
7. 90 - 8.10
(.311 - .319 )
1. 5
MIN .
(.059)
0 MIN .
Carrier Tape
Embossment
Direction of Feed
20 °
Index
Mark
(if needed)
8. 20
MAX .
(.323)
Cover
Tape
4. 5
MAX .
(.177)
Maximium component
rotation
Typical component
cavity center line
Typical component
center line
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)
MAX. so that the component cannot rotate more than 20° within the determined cavity.
MDXXBJA
B. Taped devices are supplied on a reel of the following dimensions:
Reel diameter:
330 mm ± 3.0 mm (12.99 in ± .118 in)
Reel hub diameter: 75 mm (2.95 in) MIN.
Reel axial hole:
13.0 mm ± 0.5 mm (.512 in ± .020 in)
C. 3000 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.